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At least 541 records · Page 30

Manipulation of the Electronic State of Mott Iridate Superlattice through Protonation Induced Electron-Filling

Spin-orbit-coupled Mott iridates show great similarity with parent compounds of superconducting cuprates, attracting extensive research interest especially for their electron-doped states. However, previous experiments have been largely limited within a small doping range due to the absence of effective dopants, and therefore the electron-doped phase diagram remains elusive. Here, an ionic-liquid-gating-induced protonation method is utilized to achieve electron-doping into a 5d Mott-insulator built with a SrIrO 3 /SrTiO 3 superlattice (SL), and a systematic mapping of its electron-doped phase diagram is achieved with the evolution of the iridium valence state from 4+ to 3+, equivalent to doping of one electron per iridium ion. Along increasing doping level, the parent Mott-insulator is first turned into a localized metallic state with gradually suppressed magnetic ordering, and then further evolves into a nonmagnetic band insulating state. This work forms an important step forward for the study of electron-doped Mott iridate systems, and the strategy of manipulating the band filling in an artificially designed SL structure can be readily extended into other systems with more exotic states to explore.

36 MATERIALS SCIENCE↗

Long‐Range Non‐Coulombic Electron–Electron Interactions between LaAlO 3 /SrTiO 3 Nanowires

Abstract The LaAlO 3 /SrTiO 3 system exhibits unusual magnetic and superconducting behavior arising from electron–electron interactions whose physical origin is not well understood. Quantum transport techniques, especially those involving mesoscopic geometries, can offer insight into these interactions. Here evidence for long‐range electron–electron interactions in LaAlO 3 /SrTiO 3 nanowires, measured through the phenomenon of frictional drag, is reported, in which current passing through one nanowire induces a voltage across a nearby electrically isolated nanowire. Frictional drag mediated by the Coulomb interaction is predicted to decay exponentially with interwire separation, but with the LaAlO 3 /SrTiO 3 nanowire system it is found to be nearly independent of separation. Frictional drag experiments performed with three parallel wires demonstrate long‐range frictional coupling even in the presence of an electrically grounded central wire. Collectively, these results provide evidence for a new long‐range non‐Coulombic electron–electron interaction unlike anything previously reported for semiconducting systems.

Tang, Yuhe↗

Photoelectron spectroscopy and theoretical studies of PCSe-, AsCS-, AsCSe-, and NCSe-: Insights into the electronic structures of the whole family of ECX- anions (E = N, P, and As; X = O, S, and Se)

The newly synthesized, phosphorus- and arsenic-containing analogues of the thio- and seleno-cyanate anions, PCSe-, AsCS-, and AsCSe-, as well as the known ion NCSe-, were investigated in the gas phase by negative ion photoelectron spectroscopy (NIPES), velocity-map imaging (VMI) spectroscopy, and quantum chemical computations. The electron affinities (EA), spin-orbit (SO) splittings, and “symmetric” / “antisymmetric” stretching frequencies (?1 and ?2) of the neutral radicals ECX• (E = N, P and As, X = S and Se), generated by electron detachment from the corresponding anions, were obtained from the spectra. The calculated EAs, SO splittings, and vibrational frequencies are in excellent agreement with the measured values. These newly obtained values, when combined with those previously determined for the lighter analogues, show interesting trends on descending the pnictogen and chalcogen series. These trends are rationalized on the basis of electronegativity arguments, the electron distribution in the HOMO, and NBO/NRT analyses.

Yuan, Qinqin↗

Role of Inelastic Electron–Phonon Scattering in Electron Transport through Ultra-Scaled Amorphous Phase Change Material Nanostructures

The electron transport through ultra-scaled amorphous phase change material (PCM) GeTe is investigated by using ab initio molecular dynamics, density functional theory, and non-equilibrium Green’s function, and the inelastic electron–phonon scattering is accounted for by using the Born approximation. It is shown that, in ultra-scaled PCM device with 6 nm channel length, < 4 % of the energy carried by the incident electrons from the source is transferred to the atomic lattice before reaching the drain, indicating that the electron transport is largely elastic. Our simulation results show that the inelastic electron–phonon scattering, which plays an important role to excite trapped electrons in bulk PCM devices, exerts very limited influence on the current density value and the shape of current–voltage curve of ultra-scaled PCM devices. The analysis reveals that the Poole–Frenkel law and the Ohm’s law, which are the governing physical mechanisms of the bulk PCM devices, cease to be valid in the ultra-scaled PCM devices.

Environmental Molecular Sciences Laboratory↗