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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Key factors limiting the open circuit voltage of n(+)pp(+) indium phosphide solar cells

Solar cells made from gallium arsenide (GaAs), with a room temperature bandgap of E(sub g) = 1.43 eV have exhibited the best measured open circuit voltage (V sub OC) of 1.05 V at 1 AMO, 25 C. The material InP is in many ways similar to GaAs. A simple calculation comparing InP to GaAs then shows that solar cells made from InP, with E(sub g) = 1.35 at 300 K, should exhibit the best measured (V sub OC) of approximately 950 mV at 1 AMO, 300 K. However, to date, the best measured V(sub OC) for InP solar cells made by any fabrication method is 899 mV at AM1.5, 25 C which would translate to 912 mV at 1 AMO, 25 C. The V(sub OC) of an n(+)pp(+) InP solar cell is governed by several factors. Of these, some factors, such as the thickness and doping of the emitter and base regions, are easily controlled and can be adjusted to desired values dictated by a good performance optimizing model. Such factors were not considered. There are other factors which also govern V(sub OC), and their values are not so easily controlled. The primary ones among these are (1) the indirect or Hall-Shockley-Read lifetimes in the various regions of the cell, (2) the low-doping intrinsic carrier concentration n(sub i) of the InP material, (3) the heavy doping factors in the emitter and BSF regions, and (4) the front surface recombination velocity S(sub F). The influence of these latter factors on the V(sub OC) of the n(+)pp(+) InP solar cell and the results were used to produce a near-optimum design of the n(+)pp(+) InP solar cell.

Goradia, Chandra↗
NASA NTRS1990

Key factors limiting the open circuit voltage of n(+)pp(+) indium phosphide solar cells

Solar cells made from gallium arsenide (Gaas), with a room temperature bandgap of E(sub g) = 1.43 eV have exhibited the best measured open circuit voltage (V sub oc) of 1.05 V at 1 AM0, 25 C. The material InP is in many ways similar to GaAs. A simple calculation comparing InP to GaAs then shows that solar cells made from InP, with E(sub g) = 1.35 at 300 K, should exhibit the best measured V sub oc of approximately 950 mV at 1 AM0, 300 K. However, to date, the best measured V sub oc for InP solar cells made by any fabrication method is 899 mV at AM1.5, 25 C which would translate to 912 mV at 1 AM0, 25 C. The V sub oc of an n(+)pp(+) InP solar cell is governed by several factors. Of these, some factors, such as the thickness and doping of the emitter and base regions, are easily controlled and can be adjusted to desired values dictated by a good performance optimizing model. Such factors were not considered. There are other factors which also govern V sub oc, and their values are not so easily controlled. The primary ones among these are (1) the indirect or Hall-Shockley-Read lifetimes in the various regions of the cell, (2) the low-doping intrinsic carrier concentration n(sub i) of the InP material, (3) the heavy doping factors in the emitter and BSF regions, and (4) the front surface recombination velocity S(sub F). The influence of these latter factors on the V sub oc of the n(+)pp(+) InP solar cell and the results were used to produce a near-optimum design of the n(+)pp(+) InP solar cell.

Goradia, Chandra↗
NASA NTRS1997

Chromium Diffusion Doping on ZnSe Crystals

Chromium doped zinc selenide crystal have recently been demonstrated to be a promising material for near-IR room temperature tunable lasers which have an emission range of 2-3 micrometers. In this study a new diffusion doping process has been developed for incorporation of Cr(+2) ion into ZnSe wafers. This process has been successfully performed under isothermal conditions, at temperatures above 800 C. Concentrations in excess of 10(exp 19) Cr(+2) ions/cu cm, an order of magnitude larger than previously reported in melt grown ZnSe material, have been obtained by diffusion doping, as estimated from optical absorption measurements. The diffusivity was estimated to be about 10(exp -8) sq cm/sec using a thin film diffusion model. Resistivity was derived from current-voltage measurements and in the range of 10(exp 13) and 10(exp 16) omega-cm. The emission spectra and temperature dependent lifetime data will also be presented and discussed.

Journigan, Troy D.↗
NASA NTRS1972

Investigative study of holographic recording materials development

The potential of certain cis-trans isomers and doped LiNbO3 for the holographic read/write/erase memory application was investigated. The cis-trans work involved the photochemical investigation of a number of potential materials as well as specific molecular engineering efforts on alpha-methyl stilbene and its derivatives. These efforts resulted in an increase in the change in index of refraction, and thereby, in potential recording utility, of an order of magnitude. The work on LiNbO3 was directed toward a preliminary investigation of the dynamics of the writing process. Several samples and a variety of writing conditions were investigated. An unexpected and as yet unexplained improvement in material behavior with continued recycling was observed. In addition, some effort was devoted to an analysis of the physical conditions under which several current theories of the optical damage process are valid.

Source record↗
DOE OSTI2020

Two phase transitions driven by surface electron doping in WTe 2

WTe 2 is a multifunctional quantum material exhibiting numerous emergent phases in which tuning of the carrier density plays an important role. In this work, we demonstrate two nonmonotonic changes in the electronic structure of WTe 2 upon in situ electron doping. The first phase transition is interpreted in terms of a shear displacement of the top WTe 2 layer, which realizes a local crystal structure not normally found in bulk WTe 2 . The second phase transition is associated with stronger interactions between the dopant atoms and the host, both through hybridization and electric field. These results demonstrate that electron doping can drive structural and electronics changes in bulk WTe 2 with implications for realizing nontrivial band-structure changes in heterointerfaces and devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

X-ray photoelectron spectroscopy data from lightly Pd doped TiO 2 anatase nanoparticles

Here, two sets of XPS spectra from ≈13 nm slightly Pd-doped anatase TiO 2 particles are reported. Anatase is the most stable form of TiO 2 for small particles, and these spectra are the first spectra from nano-sized anatase to appear in Surface Science Spectra. The high resolution Ti 2p spectrum has an extended range showing important loss features not appearing in most of the earlier data records. The O 1s spectrum also has loss features often ignored, and in this case, the loss features are overlapped by some of the Ti 2s peak features that complicate quantitative analysis. The spectra reported here were used as example spectra in a guide to backgrounds in XPS, and the availability of these spectra in digital form allows LRH-analysts to compare their background selections and analysis approach to those discussed in the guide.

36 MATERIALS SCIENCE↗
NASA NTRS1982

Cold crucible Czochralski for solar cells

The efficiency and radiation resistance of present silicon solar cells are a function of the oxygen and carbon impurities and the boron doping used to provide the proper resistivity material. The standard Czochralski process used grow single crystal silicon contaminates the silicon stock material due to the use of a quartz crucible and graphite components. The use of a process which replaces these elements with a water cooled copper to crucible has provided a major step in providing gallium doped (100) crystal orientation, low oxygen, low carbon, silicon. A discussion of the Cold Crucible Czochralski process and recent float Zone developments is provided.

Trumble, T. M.↗
DOE OSTI2026

Andrew Dieringer Poster for review

Silicon carbide has been identified as a useful material for nuclear application due to its heat resistance, low neutron absorbing cross-section, chemical inertness, and its rigidity as a structural material. These properties make it very favorable for high temperature environments such as in TRISO fuel and advanced reactor designs. Treatments such as n-doping, where carrier atoms are added to increase the number of free electrons, are expected to further improve properties such as thermal conductivity and electrical resistivity. Due to the high amount of neutron interactions in a nuclear reactor, it is expected that silicon carbide used in a reactor will be passively n-doped via transmutation. Studying the effects of n-doping in silicon carbide can help us better understand how the material will operate under real world conditions. We have found that n-doping the SiC increases both thermal and electrical conductivity, providing positive feedback under reactor usage. Previously it had been thought that under reactor conditions material properties of SiC could only degrade due to defects caused by neutron interactions. This study shows that transmutation doping can help to counteract and slow this process. This research shows that SiC can be used in nuclear reactor components contrasting with more costly and complicated alternative materials.

36 - MATERIALS SCIENCE↗
DOE OSTI2025

Revisiting the Role of Entropy for Charge Separation in 1D Pi-Conjugated Semiconductors

Free carrier generation in organic donor/acceptor heterojunctions and redox-doped organic semiconductors is poorly understood, since assumed tight electron-hole binding conflicts with observed high free carrier yields. Cornerstone analyses that have guided the field for over 15 years predict that entropy can stabilize free charges in 2D and 3D pi-conjugated semiconductors but not in 1D systems. Here, the impact of entropy on charge generation in 1D pi-conjugated semiconductors is revisited by exploiting a greatly simplified system where enthalpy considerations alone should not allow for free charge generation. Noncontact solution-phase microwave conductivity is used to investigate the carrier density-dependent conductivity and dielectric constant in isolated chemically doped semiconducting single-walled carbon nanotubes in a low-dielectric solvent. Dopant chemical structure dramatically influences the carrier density-dependent complex conductivity, with bulky dopants facilitating carrier escape even at carrier densities below one carrier per nanotube. Three distinct numerical calculations show that entropic stabilization dramatically lowers the Gibbs energy barrier for free charge generation, explaining the high yield of free carriers, even in 1D. This renewed understanding of entropy's role in carrier generation has important implications for designing organic electronic devices-such as solar cells and thermoelectric energy harvesters-for enhanced carrier yield, conductivity, and performance.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Defect Chemistry and Doping of Ultrawide Band Gap (III)BO 3 Compounds

New wide band gap semiconductors are needed to increase the power, voltage, and switching frequency limits of power electronic devices. A recent computational search identified a family of ultrawide band gap (4.8-7.8 eV) group-III orthoborates as promising materials for power electronics, assuming n-type doping could be attained. In this report we test this assumption by investigating the defect chemistry and dopability of rhombohedral calcite-structured AlBO 3 , GaBO 3 , and InBO 3 using first-principles calculations. Of the three, we find InBO 3 to have the most potential for n-type doping without significant compensation by native acceptor defects. Furthermore, Zr is predicted to readily substitute for In and behave as a shallow donor with maximal net donor concentrations exceeding 1 x 10 18 cm -3 under growth conditions typical for this class of materials. We also demonstrate thin film growth of InBO3 and measure its absorption onset, which we find to be consistent with theory. Ultimately, our results confirm the promise of InBO 3 as an n-type ultrawide band gap semiconductor and point to alloying with GaBO 3 and AlBO 3 for further optimization of band gap and electron concentration for high-power applications.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Quantifying Uncertainties in Heat Capacity Measurements of Molten Salts Determined Using Differential Scanning Calorimetry

Uncertainty in specific heat capacity values of a molten salt determined by using differential scanning calorimetry (DSC) was assessed based on the precision of replicate measurements of heat flows used in the calculation and effects of corrections that are commonly made to heat flow measurements. The ratio method of determining heat capacity was applied using the results of replicate heat flow measurements made with two empty cells, a sapphire reference material, and three samples of a doped NaCl-UCl 3 salt mixture. Replicate measurements with empty cells were used to quantify the effects of system instabilities and sensitivities on the measured heat flows of sapphire and salt. The combined effects of uncertainties in individual heat flow measurements made with blank cells using this system were quantified to be 2.6 μV based on isothermal holds before and after the scan, with cell placement adding the greatest uncertainty. This value was used as the tolerance for accepting background-corrected heat flows measured with sapphire and salt to calculate the specific heat capacity. The acceptable heat flows measured for sapphire and salt over the temperature range of 540 to 725 °C resulted in calculated specific heat capacity values ranging from 0.53 to 0.91 J g −1 K −1 with an overall average value of 0.70 J g −1 K −1 and an uncertainty of 0.22 J g −1 K −1 at the 99 % confidence level. The combined uncertainty in the specific heat capacity masked detection of any effect of temperature or salt composition that occurred.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Mesoscale modeling to inform Bison models of accident tolerant fuel concepts

U 3 Si 2 and doped UO 2 have been under investigation in recent years as potential accident-tolerant fuel concepts. In this report, lower-length scale studies of these fuel concepts carried out during Fiscal Year 2020 are detailed. U 3 Si 2 is a potential accident-tolerant fuel that shows promise due to its high thermal conductivity and higher uranium density relative to UO 2 . However, its swelling and fission gas release behavior in light water reactor (LWR) conditions is relatively unknown. To provide mechanistic insight and determine parameters for engineering-scale fuel performance modeling of pellet-form U 3 Si 2 , phase-field simulations of the growth, interconnection, and venting of intergranular fission gas bubbles were performed. The fractional coverage of the grain boundary and the fraction of bubble area that is vented were calculated as a function of time. From the simulation data, the fractional grain boundary coverage at saturation, an important parameter needed in engineering-scale modeling of swelling and fission gas release, was determined. Multiple simulations were run to determine the uncertainty in the calculated value. The effect of model assumptions and input parameters that are not well known was evaluated. Simulation results are compared to related theoretical and computational work. Based on the simulation results, a value of 0.60 for the fractional grain boundary coverage at saturation is recommended for U 3 Si 2 fuel.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
NASA NTRS1990

LWIR detector arrays based on nipi superlattices

It is proposed that nipi superlattice structures in InSb or InAs can be grown with modern techniques to achieve tunable and stable LWIR detectors with high performance. Key device and material considerations for the application of such nipi superlattices to LWIR detectors are examined. It is shown that practical absorption coefficients (of about 100/cm) can be achieved with high doping concentrations (of about 10 to the 19th/cu cm) achievable in these materials. In particular, recent delta doping techniques being developed in molecular beam epitaxy offer promise of higher doping concentrations, improved uniformity, and greater flexibility in tailoring the structures for optimum detector performance.

Maserjian, J.↗
DOE OSTI2022

Understanding the Re-entrant Phase Transition in a Non-magnetic Scheelite

We report the stereochemical activity of lone pair electrons plays a central role in determining the structural and electronic properties of both chemically simple materials such as H 2 O, as well as more complex condensed phases such as photocatalysts or thermoelectrics. TlReO 4 is a rare example of a non-magnetic material exhibiting a re-entrant phase transition and emphanitic behavior in the long-range structure. Here, we describe the role of the Tl + 6s 2 lone pair electrons in these unusual phase transitions and illustrate its tunability by chemical doping, which has broad implications for functional materials containing lone pair bearing cations. First-principles density functional calculations clearly show the contribution of the Tl + 6s 2 in the valence band region. Local structure analysis, via neutron total scattering, revealed that changes in the long-range structure of TlReO 4 occur due to changes in the correlation length of the Tl + lone pairs. This has a significant effect on the anion interactions, with long-range ordered lone pairs creating a more densely packed structure. This resulted in a trade-off between anionic repulsions and lone pair correlations that lead to symmetry lowering upon heating in the long-range structure, whereby lattice expansion was necessary for the Tl + lone pairs to become highly correlated. Similarly, introducing lattice expansion through chemical pressure allowed long-range lone pair correlations to occur over a wider temperature range, demonstrating a method for tuning the energy landscape of lone pair containing functional materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Influence of aluminum incorporation and aqueous conditions on metal ion release of high-Ni transition metal oxide nanomaterials

Developing a materials perspective of how to control the degradation and negative impact of complex metal oxides requires an integrated understanding of how these nanomaterials transform in the environment and interact with biological systems. Doping with aluminum is known to stabilize oxide materials, but has not been assessed cohesively from synthesis to environmental fate and biological impact. In the present study, the influence of aluminum doping on metal ion release from transition metal oxides was investigated by comparing aqueous transformations of lithium nickel cobalt aluminum oxide (LiNi 0.82 Co 0.15 Al 0.03 O 2 ; NCA) and lithium nickel cobalt oxide (LiNi 0.80 Co 0.20 O 2 ; NC) nanoparticles and by calculating the energetics of metal release using a density functional theory (DFT) and thermodynamics method. Two model environmental organisms were used to assess biological impact, and metal ion release was compared for NCA and NC nanoparticles incubated in their respective growth media: moderately hard reconstituted water (MHRW) for the freshwater invertebrate Daphnia magna (D. magna) and minimal growth medium for the Gram-negative bacterium Shewanella oneidensis MR-1 (S. oneidensis). Further, the amount of metal ions released was reduced for NCA compared to NC in MHRW, which correlated to changes in the modeled energetics of release upon Al substitution in the lattice. In minimal medium, metal ion release was approximately an order of magnitude higher compared to MHRW and was similar to the stoichiometry of the bulk nanoparticles for both NCA and NC. Interpretation of the release profiles and modeling indicated that the increase in total metal ion release and the reduced influence of Al doping arises from lactate complexation of metal ions in solution. The relative biological impacts of NC and NCA exposure for both S. oneidensis and D. magna were consistent with the metal release trends observed for minimal medium and MHRW, respectively. Together, these results demonstrate how a combined experimental and computational approach provides valuable insight into the aqueous transformations and biological impacts of complex metal oxide nanoparticles.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Zero-Strain Metal-Insulator Transition by the Local Fluctuation of Cation Dimerization

The coupled electronic and structural transitions in metal-insulator transition (MIT) hinder ultrafast switching and ultimate endurance. Decoupling these transitions and achieving a zero-strain electronic MIT can overcome the fundamental limitations of MIT in solid materials. Here, this study demonstrates that iso-valent Ti dopants in supercooled VO 2 epitaxial films cause MIT with minimal hysteresis without changing unit-cell volume and crystal symmetry. The Ti dopants in the VO 2 lattice locally alter the configuration of V-V pairs, where the long-range ordering in V-V pairs is disrupted, and the nano-domains of V-V dimers are formed. Strikingly, these local V-V dimers persist even above the electronic transition temperature (T MI ), facilitating the zero-strain electronic MIT with nanoscale structural heterogeneity. The geometrically compatible interface between insulating and metallic phases drastically enhances switching speed and endurance during electrically and optically driven zero-strain MIT. In conclusion, this discovery offers a fresh perspective on the scientific understanding of MIT and the improved functionality in terms of device speed and reliability by decoupling electronic and structural transitions.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Mechanistic Insights into the Surface Instabilities of TiNb 2 O 7, a High‐Power Li‐Ion Anode

TiNb 2 O 7 (TNO) is a promising Li-ion battery anode for high-power applications, such as implantable medical devices and heavy-duty equipment. Hailed as being safe due to its elevated operating potential near 1.6 V, TNO has long been assumed to be highly stable in the carbonate-based electrolytes used in Li-ion batteries. Herein, all mechanisms occurring at the surface of both TNO and Nd-doped TNO are identified, and both materials in fact show significant gassing. CO 2 is even released at open circuit conditions, demonstrating the poor chemical stability of the material in the electrolyte even prior to battery operation. Such extreme instability is a critical safety concern. In addition, it was found that Ti dissolves from the surface of TNO particles at low voltage (below 1.4 V vs Li), and in fact deposits on the counter electrode. Ti further inside TNO particles then diffuses to the Ti-poor surface during discharge. Partial carbon-coating as a mitigating measure has also been tested and found to exacerbate these processes. The findings identify novel reactions occurring within TNO, and clearly highlight the need to stabilize the surfaces of TNO in order to prevent such aggressive deterioration at the surface of the particles.

25 ENERGY STORAGE↗
DOE OSTI2023

Observation of Weak Counterion Size Dependence of Thermoelectric Transport in Ion Exchange Doped Conducting Polymers Across a Wide Range of Conductivities

Conducting polymers are of interest for a broad range of applications from bioelectronics to thermoelectrics. The factors that govern their complex charge transport physics include the structural disorder present in these highly doped polymer films and the Coulombic interactions between the electronic charge carriers and the dopant counterions. Previous studies have shown that at low doping levels carriers are strongly trapped in the vicinity of the counterions, while at high doping levels charge transport is not limited by Coulombic trapping, which manifests itself in the conductivity being independent of the size of the dopant counterion. Here a recently developed ion exchange doping method is used to investigate the ion size dependence of a semicrystalline polythiophene–based model system across a wide range of conductivities. It is found that the regime in which the charge and thermoelectric transport is not or only weakly dependent on ion size, extends to surprisingly low conductivities. This surprising observation is explained by a heterogeneous doping that involves doping of the amorphous domains to high doping levels first before doping of the ordered, crystalline domains occurs. The study provides new insights into how the thermoelectric physics of conducting polymers evolves as a function of doping level.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗