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At least 541 records · Page 30

Microscopic origin of ultranodal superconducting states in spin- 1 2 systems

Several unconventional superconductors show indications of zero-energy excitations in the superconducting state consistent with the existence of a so-called Bogoliubov-Fermi surface (BFS). In particular, FeSe isovalently substituted with S seems to acquire a nonzero density of states at zero energy at low temperatures as the system goes into the tetragonal phase, consistent with a previously proposed phenomenological theory assuming an anisotropic spin singlet pairing gap coexisting with a nonunitary interband triplet component. Here we search for a microscopic model that can support the coexistence of singlet pairing with other orders, including interband nonunitary triplet pairing with magnetization, and discuss several candidates that indeed stabilize ground states with BFS. We show that with proper choice of the coupling strength of the various orders in our model, spontaneous breaking of C 4 rotational symmetry is realized at low temperatures. This feature resembles the findings of recent angle-resolved photoemission experiments in Fe(Se,S) in the tetragonal phase.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Observation of a Flat and Extended Surface State in a Topological Semimetal

A flat band structure in momentum space is considered key for the realization of novel phenomena. A topological flat band, also known as a drumhead state, is an ideal platform to drive new exotic topological quantum phases. Using angle-resolved photoemission spectroscopy experiments, we reveal the emergence of a highly localized surface state in a topological semimetal BaAl4 and provide its full energy and momentum space topology. We find that the observed surface state is localized in momentum, inside a square-shaped bulk Dirac nodal loop, and in energy, leading to a flat band and a peak in the density of state. These results imply this class of materials as an experimental realization of drumhead surface states and provide an important reference for future studies of the fundamental physics of correlated quantum effects in topological materials.

36 MATERIALS SCIENCE↗

Desorption Kinetics of O and CO from Graphitic Carbon Surfaces

The desorption of O/CO from graphitic carbon surfaces is investigated using a one-dimensional model describing the adsorbate interactions with the surface phonon bath. The kinetics of desorption are described through the solution of a master equation for the time-dependent population of the adsorbate in an oscillator state, which is modified through thermal fluctuations at the surface. The interaction of the adsorbate with the surface phonons is explicitly captured by using the computed phonon density Of states (PDOS) of the surface. The coupling of the adsorbate with the phonon bath results in the transition of the adsorbate up and down a vibrational ladder. The adsorbate-surface interaction is represented in the model using a Morse potential, which allows for the desorption process to be directly modeled as a transition from bound to free (continuum) state. The PDOS is a property of the material and the lattice; and is highly sensitive to the presence of defects. The effect of etch pits along with random surface defects on the PDOS is considered in the present work. The presence of defects causes a redshift and broadening of the PDOS, which in turn changes the phonon frequency modes available for adsorbate coupling at the surface. Using the realistic PDOS distributions, the phonon-induced desorption (PID) model was used to compute the transition and desorption rates for both pristine and defective systems. Mathissen’s rule is used to compute the phonon relaxation time for pristine and defective systems based on the phonon scattering times for each of the different scattering processes. First, the desorption rates of the pristine system is fitted against the experimental values to obtain the Morse potential parameters for each of the observed adatoms. These Morse potential parameters are used along with the defective PDOS and phonon relaxation time to compute the desorption rates for the defective system. The defective system rates (both transition and desorption) were consistently lower in comparison with the pristine system. The difference between the transition rates is more significant at lower initial states due to higher energy spacing between the levels. In the case of the desorption rates, the difference between the defective and pristine system is more significant at higher temperatures. The desorption rates for each of the system shows an order of magnitude decrease with the strongly bound systems exhibiting the greatest reduction in the desorption rates.

Swaminathan-Gopalan, Krishnan↗

Tight-binding study of beryllium

In this work, we have applied the Naval Research Laboratory Tight-binding (NRL-TB) Method to the hcp alkaline-earth metal Beryllium. This approach consists of fitting to energy band and total energy data generated by the Linearized Augmented Plane Wave (LAPW) for the fcc, bcc, sc, and hcp structures as a function of volume. First, we found that using the Generalized Gradient Approximation (GGA) for the input data secures a better agreement to experimental volumes than the LDA. Second, we found that including small volumes to the fit is needed to get TB parameters that are transferable enough to successfully predict the energies of structures that were not fitted, and to perform molecular dynamics (MD) simulations. The non-orthogonal Hamiltonian obtained, is successful in correctly predicting the hcp lattice as the ground state of Be and finding eight other structures, that were not fitted to LAPW, positioned at higher energies. In addition, the NRL-TB produces accurate energy bands, densities of states, elastic constants, the Bain path and several quantities derived from MD simulations.

36 MATERIALS SCIENCE↗

Origin of Stabilization of Ligand-Centered Mixed Valence Ruthenium Azopyridine Complexes: DFT Insights for Neuromorphic Applications

Redox-driven conductance changes are critical processes in molecular- and coordination-complex-based memristive thin films and devices that are envisioned for neuromorphic technologies, but fundamental mechanisms of conductance switching are not fully understood. Here, we explore charge disproportionation (CD) processes in [Ru II L 2 ](PF 6 ) 2 molecular systems that intrinsically involve interfragment charge transfer (IFCT). Using a combination of ab initio molecular dynamics simulation (AIMD), time-dependent density functional theory (TD-DFT), and density functional theory (DFT) calculations, we investigate the electron transfer mechanisms and the roles of temperature and cell volumetric expansion in facilitating the counterion movements and electronic transitions required for low-cost IFCT and charge redistribution. A detailed analysis of the density of states and TD-DFT calculations highlights that unpaired electrons play a crucial role in low-energy transitions, with the azo (N=N) groups of the ligand serving as the primary sites for electronic transport between molecular fragments, further stabilizing the asymmetric state. Localization of added electrons on azo ligands occurs with negligible change at the Ru centers, supported by atomic volume expansions up to +4.74 bohr 3 , and goes along with a progressive reduction of the HOMO−LUMO gap across redox states, suggesting enhanced conductivity. The TD-DFT analysis reveals a dominant IFCT excitation at 2082.76 nm in the doubly reduced (22) state, while a stabilization energy of 1.20 eV of the asymmetric (13) state relative to the symmetric (22) state is predicted by constrained DFT. Periodic DFT and AIMD simulations emulating a molecular film show that the stabilization of the asymmetric state, relative to a symmetric one, translates in net charge separation values (order of ∼0.33 e) that are strongly linked to increased counterion mobility (average counterion displacements exceeding 0.7 Å per atom during CD events) and the involvement of azo groups in electron redistribution. These findings, which align with previously reported experimental and computational data, provide key insights into the IFCT mechanisms and electronic transport facilitated by azo groups, with important implications for redox-driven memristive and neuromorphic technologies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Self-interaction-corrected Kohn–Sham effective potentials using the density-consistent effective potential method

Density functional theory (DFT) and beyond-DFT methods are often used in combination with photoelectron spectroscopy to obtain physical insights into the electronic structure of molecules and solids. The Kohn–Sham eigenvalues are not electron removal energies except for the highest occupied orbital. The eigenvalues of the highest occupied molecular orbitals often underestimate the electron removal or ionization energies due to the self-interaction (SI) errors in approximate density functionals. Here, we adapt and implement the density-consistent effective potential method of Kohut, Ryabinkin, and Staroverov (2014) to obtain SI-corrected local effective potentials from the SI-corrected Fermi–Löwdin orbitals and density in the Fermi–Löwdin orbital self-interaction correction scheme. The implementation is used to obtain the density of states (photoelectron spectra) and HOMO–LUMO gaps for a set of molecules and polyacenes. Good agreement with experimental values is obtained compared to a range of SI uncorrected density functional approximations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

First-order magnetic phase transition in P r 2 In with negligible thermomagnetic hysteresis

Magnetic first-order phase transitions are key for the emergence of functionalities of fundamental and applied significance, including magnetic shape memory as well as magnetostrictive and magnetocaloric effects. Such transitions are usually associated with thermomagnetic hysteresis. In this paper we report the observation of a firstorder transition in Pr 2 In from a paramagnetic to a ferromagnetic state at $T_C$ = 57K without a detectable thermomagnetic hysteresis, which is also accompanied by a large magnetocaloric effect. The peculiar electronic structure of Pr2In exhibiting a large density of states near the Fermi energy explains the highly responsive magnetic behavior of the material. The magnetic properties of Pr 2 In are reported, including observation of another (second-order) magnetic transition at 35 K.

36 MATERIALS SCIENCE↗

Nature of native atomic defects in ZrTe 5 and their impact on the low-energy electronic structure

Over the past decades, investigations of the anomalous low-energy electronic properties of ZrTe 5 have reached a wide array of conclusions. An open question is the growth method's impact on the stoichiometry of ZrTe 5 samples, especially given the very small density of states near its chemical potential. In this work, we report on high-resolution scanning tunneling microscopy and spectroscopy measurements performed on samples grown via different methods. Using density functional theory calculations, we identify the most prevalent types of atomic defects on the surface of ZrTe 5 , namely, Te vacancies and intercalated Zr atoms. Finally, we precisely quantify their density and outline their role as ionized defects in the anomalous resistivity of this material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Underlying simplicity of 5f unoccupied electronic structure

Using a simple empirical model based upon the bremsstrahlung isochromat spectroscopy of elemental Th, it is possible to explain the recent high energy resolution fluorescence detection measurements of UF 4 (n = 2) and UCd 11 (n = 3) as well as the new inverse photoelectron spectroscopy of Pu 2 O 3 (n = 5), where n is the 5f occupation number. Furthermore, a critical issue in this analysis is the assumption that the Th 5f states are essentially empty, which will be confirmed both experimentally and computationally. Thus, for 5f systems, this simple model provides a unified and consistent picture of 5f unoccupied density of states in simple, localized systems, as the 5f occupation varies in the early part of the series, for n = 0, 2, 3, and 5.

36 MATERIALS SCIENCE↗

A technique for determining Urbach edge, midgap states and electric field in a-Si:H and a-(Si,Ge):H devices

A technique for measuring the Urbach energy of valence band tail states and midgap defect densities in a-Si:H and a-(Si,Ge):H devices is described. The Urbach energy is determined by measuring the quantum efficiency (QE) of delocalized holes in the devices, whereas the midgap state density (DOS) is estimated by measuring the QE of localized holes. The distinction between delocalized and localized holes is obtained from the behavior of the QE upon the application of reverse bias to the device. The QE of holes localized in midgap states increases significantly upon the application of reverse bias because of Frenkel-Poole tunneling, whereas the QE of holes in tail states does not show such an increase. It is shown that upon light soaking the Urbach edge does not change, but the midgap DOS does increase significantly. A primary consequence of the increase in DOS is a decrease in electric field in the low-field middle i region of the p-i-n cell. The decrease in electric field is experimentally estimated by fitting the increase in the reverse bias QE to Frenkel-Poole tunneling.

Dalal, Vikram L.↗

The anomalous X-ray absorption spectrum of Vela X-1

The HEAO 2 satellite's Solid State Spectrometer and Monitor Proportional Counter was used to observe one orbit of the massive X-ray binary Vela X-1. Using spectral fits to the data as a function of orbital phase, the column density and state of the material along the line of sight to the X-ray source has been inferred. The spectrum near orbital phase 0.2 compares favorably with absorption by neutral material with a column density corresponding to plausible values of stellar wind velocity law and total primary mass loss rate. Spectra at later orbital phases, which show unexpected strong absorption features near 2.0 and 2.5 keV, are interpreted as due to absorption by material with suppressed opacity below 2.0 keV. The opacity required to produce the observed features implies either the presence of an intense soft X-ray flux, or altered elemental abundances in the gas near Vela X-1.

Kallman, T. R.↗

Effect of substitutional doping and disorder on the phase stability, magnetism, and half-metallicity of Heusler alloys

Spintronics is the fast growing field that will play a key role in optimizing power consumption, memory, and processing capabilities of nanoelectronic devices. Heusler alloys are potential candidates for application in spintronics due to their room temperature (RT) half-metallicity, high Curie temperature, low lattice mismatch with most substrates, and strong control on electronic density of states at Fermi level. In this work, we investigate the effect of substitutional doping and disorder on the half-metallicity, phase stability, and magnetism of Heusler alloys using density functional theory methods. Our study shows that electronic and magnetic properties of half/full-Heusler alloys can be tuned by changing electron-count through controlled variation of chemical compositions of alloying elements. We provide a detailed discussion on the effect of substitutional doping and disorder on the tunability of half-metallic nature of Co 2 MnX and NiMnX based Heusler alloys, where X represents group 13–16 and period 3–6 elements of the periodic table. Based on the idea of electron count and disorder, we predicted a possible existence of thermodynamically stable half-metallic multicomponent bismuthides, for example, (CuNi 3 )Mn 4 Bi 4 and (ZnNi 7 )Mn 8 Bi 8 , through substitution doping at Ni site by specific Cu and Zn composition in half-Heusler NiMnBi. We believe that the design guide based on electron-counts presented for half-metals will play a key role in electronic-structure engineering of novel Heusler alloys for spintronic application, which will accelerate the development and synthesis of novel materials.

36 MATERIALS SCIENCE↗

Re-examining the silicon self-interstitial charge states and defect levels: A density functional theory and bounds analysis study

The self-interstitial atom (SIA) is one of two fundamental point defects in bulk Si. Isolated Si SIAs are extremely difficult to observe experimentally. Even at very low temperatures, they anneal before typical experiments can be performed. Given the challenges associated with experimental characterization, accurate theoretical calculations provide valuable information necessary to elucidate the properties of these defects. Previous studies have applied Kohn–Sham density functional theory (DFT) to the Si SIA, using either the local density approximation or the generalized gradient approximation to the exchange-correlation (XC) energy. The consensus of these studies indicates that a Si SIA may exist in five charge states ranging from -2 to +2 with the defect structure being dependent on the charge state. This study aims to re-examine the existence of these charge states in light of recently derived “approximate bounds” on the defect levels obtained from finite-size supercell calculations and new DFT calculations using both semi-local and hybrid XC approximations. We conclude that only the neutral and +2 charge states are directly supported by DFT as localized charge states of the Si SIA. Within the current accuracy of DFT, our results indicate that the +1 charge state likely consists of an electron in a conduction-band-like state that is coulombically bound to a +2 SIA. Furthermore, the -1 and -2 charge states likely consist of a neutral SIA with one and two additional electrons in the conduction band, respectively.

36 MATERIALS SCIENCE↗

Deposition temperature dependence of the deep defect density for a-Si:H films grown by electron cyclotron resonance microwave plasma

The dependence on deposition temperature of the mobility gap density of states has been determined for hydrogenated amorphous silicon (a-Si:H) films grown by electron cyclotron resonance (ECR) microwave plasma CVD. A minimum in the integrated deep defect density of 1 x 10 exp 16/cu cm was found to occur at a temperature of approximately 250 C, while an Urbach slope minimum of 52 meV was observed at 175 C under our deposition conditions. Based on these measurements the ECR-grown films were found to be of excellent device quality and comparable to a-Si:H films grown by RF plasma-enhanced CVD.

Essick, J. M.↗

Electronic Structure of TlBa2CaCu2O(7-Delta)

The core levels of TlBa2CaCu2O(7-delta) (Tl-1212) epitaxial films have been measured with X-ray photoelectron spectroscopy (XPS). The valence electronic structure has been determined using the full-potential linear muffin-tin-orbital band-structure method and measured with XPS. The calculations show that a van Hove singularity (VHS) lies above the Fermi level (E(sub F)) for the stoichiometric compound (delta = 0.5), while for 50% oxygen vacancies in the Tl-O layer (delta = 0.5) E(sub F) is in close proximity to the VHS. Samples annealed in nitrogen (to reduce the hole overdoping by the removal of oxygen) exhibit higher core-level binding energies and a higher T(sub c), consistent with a shift of E(sub F) closer to the VHS. Comparisons are made to the core levels and valence bands of Tl2Ba2CaCu2O(8 + delta)(Tl-2212) and HgBa2CaCu2O)6 + delta) (Hg- 1212). The similarity of the Cu 2p(sub 3/2) spectra for Tl-1212 and Tl-2212 indicates that the number of Tl-O layers has little effect on the Cu-O bonding. However, the Tl-1212 and Hg-1212 Cu 2p(sub 3/2) signals exhibit differences which suggest that the replacement of T(sup 3+) with Hg(sup 2+) results in a decrease in the O 2p right arrow Cu 3d charge-transfer energy and differences in the probabilities of planar vs apical oxygen charge transfer and/or Zhang-Rice singlet-state formation. Differences between the Tl-1212 and the Tl-2212 and Hg-1212 measured valence bands are consistent with the calculated Cu 3d and (Tl,Hg) 6s/5d partial densities of states.

Vasquez, R. P.↗

Temperature-dependent lattice dynamics in iridium

The characterization of simple elemental systems is key to benchmarking first-principles modeling of electronic and vibrational behaviors of materials. A large body of literature has been built for most elemental systems in the periodic table. However, surprisingly little neutron work has been performed to probe the vibrational properties of iridium, likely due to its large neutron absorption cross section. Nonetheless, iridium is of significant scientific and technological interest due to large relativistic electron effects and electron-phonon coupling, particularly in strongly correlated iridate compounds. In this paper, we report temperature-dependent inelastic neutron scattering measurements of the vibrational properties of iridium, from which we extract key thermodynamic properties. To overcome the challenge of the large neutron absorption of iridium, we developed a simple post-processing correction procedure. The measured densities of phonon states compare well with quasiharmonic density functional theory calculations, although the obtained experimental phonon Grüneisen parameters are much larger than expected, reaching as high as γ=4.5, indicating substantial anharmonicity.

36 MATERIALS SCIENCE↗

Nanoscale Superconducting States in the Fe-Based Filamentary Superconductor of Pr-Doped CaFe 2 As 2

The low-temperature scanning tunneling microscope and spectroscopy (STM/STS) are used to visualize superconducting states in the cleaved single crystal of 9% praseodymium-doped CaFe 2 As 2 (Pr-Ca122) with Tc ≈ 30 K. The spectroscopy shows strong spatial variations in the density of states (DOS), and the superconducting map constructed from spectroscopy discloses a localized superconducting phase, as small as a single unit cell. The comparison of the spectra taken at 4.2 K and 22 K (below vs. close to the bulk superconducting transition temperature) from the exact same area confirms the superconducting behavior. Nanoscale superconducting states have been found near Pr dopants, which can be identified using dI/dV conductance maps at +300 mV. There is no correlation of the local superconductivity to the surface reconstruction domain and surface defects, which reflects its intrinsic bulk behavior. We, therefore, suggest that the local strain of Pr dopants is competing with defects induced local magnetic moments; this competition is responsible for the local superconducting states observed in this Fe-based filamentary superconductor.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Differentiating the bonding states in calcium carbonate polymorphs by low-loss electron-energy-loss spectroscopy

Calcium carbonate is one of the important building components in organisms, especially the two most common polymorphs, calcite and aragonite. Here, to understand the difference in bonding state, the two polymorphs are characterized by valence (low-loss) electron energy loss spectroscopy. It is found that the difference in Ca M 23 edge originating from 3p to 3d states is consistent with the change of Ca-O bonds in the two studied polymorphs. Surprisingly, the measured Ca M 23 edge is in qualitative agreement with the calculated partial density of states (PDOS) of Ca-d states in contrast to their L edges (from 2p to 3d states) which are strongly influenced by atomic multiplet effect (spin-orbit coupling). This is because the atomic multiplet effect is much reduced for the Ca 3p orbital, which permits the corresponding Ca M 23 edge to be compared with the PDOS results. Our findings show insights that PDOS can potentially be used to interpret the M 23 edge of lighter 3d transition metals such as scandium, titanium, vanadium and chromium when such interpretation may not be achieved for their L edges.

36 MATERIALS SCIENCE↗