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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors

Layered two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) have been widely isolated, synthesized, and characterized recently. Numerous 2D materials are identified as the potential candidates as channel materials for future thin film technology due to their high mobility and the exhibiting bandgaps. While many TMD filed-effect transistors (FETs) have been widely demonstrated along with a significant progress to clearly understand the device physics, large contact resistance at metal/semiconductor interface still remain a challenge. From 2D device research point of view, how to minimize the Schottky barrier effects on contacts thus reduce the contact resistance of metals on 2D materials is very critical for the further development of the field. Here, we present a review of contact research on molybdenum disulfide and other TMD FETs from the fundamental understanding of metal-semiconductor interfaces on 2D materials. A clear contact research strategy on 2D semiconducting materials is developed for future high-performance 2D FETs with aggressively scaled dimensions.

36 MATERIALS SCIENCE↗
DOE OSTI2014

The effect of metal-contacts on carbon nanotube for high frequency interconnects and devices

High frequency characterisation of platinum and tungsten contacts on individual multi-walled carbon nanotubes (MWNT) is performed from 10 MHz to 50 GHz. By measuring the scattering parameters of aligned individual MWNTs, we show that metal contacts enhance an inductive response due to the improved MWNT-electrode coupling reducing the capacitive effect. This behaviour is pronounced in the frequency below 10 GHz and strong for tungsten contacts. We explain the inductive response as a result of the interaction of stimulus current with the localized (or defects) states present at the contact region resulting in the current lagging behind the voltage. The results are further supported by direct current measurements that show tungsten to significantly increase carbon nanotube-electrode coupling. The immediate consequence is the reduction of the contact resistance, implying a reduction of electron tunnelling barrier from the electrode to the carbon nanotube.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Gate assisted Kelvin test structure to measure the electron and hole flows at the same nanowire contacts

A gate assisted Kelvin test structure based on Si nanowire field effect transistors has been designed and fabricated for the characterization of the transistor source/drain contacts. Because the Si nanowire field effect transistors exhibit ambipolar characteristics with electron current slightly lower than the hole current, we can select the type of carriers (electrons or holes) flowing through the same contacts and adjust the current by the applied gate voltage. In this way, we are able to measure the characteristics of the same contact with either pure electron or hole flow. In addition, we found that the nanowire contacts behave very differently depending on the current flow directions. This indicates that the source and drain contact resistance can be dramatically different. Such a gate assisted Kelvin Test structure will lead to future metrology and applications in nanoelectronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Schottky barrier height reduction for holes by Fermi level depinning using metal/nickel oxide/silicon contacts

We report the experimental demonstration of Fermi level depinning using nickel oxide (NiO) as the insulator material in metal-insulator-semiconductor (M-I-S) contacts. Using this contact, we show less than 0.1 eV barrier height for holes in platinum/NiO/silicon (Pt/NiO/p-Si) contact. Overall, the pinning factor was improved from 0.08 (metal/Si) to 0.26 (metal/NiO/Si). The experimental results show good agreement with that obtained from theoretical calculation. NiO offers high conduction band offset and low valence band offset with Si. By reducing Schottky barrier height, this contact can be used as a carrier selective contact allowing hole transport but blocking electron transport, which is important for high efficiency in photonic applications such as photovoltaics and optical detectors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Low contact resistance in epitaxial graphene devices for quantum metrology

We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001) for applications in quantum resistance metrology. Using three-terminal measurements in the quantum Hall regime we observed variations in contact resistances ranging from a minimal value of 0.6 Ω up to 11 kΩ. We identify a major source of high-resistance contacts to be due bilayer graphene interruptions to the quantum Hall current, whilst discarding the effects of interface cleanliness and contact geometry for our fabricated devices. Moreover, we experimentally demonstrate methods to improve the reproducibility of low resistance contacts (<10 Ω) suitable for high precision quantum resistance metrology.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Electrical and structural properties of group-4 transition-metal nitride (TiN, ZrN, and HfN) contacts on Ge

Electrical and structural properties were investigated for group-4 transition-metal nitride contacts on Ge (TiN/Ge, ZrN/Ge, and HfN/Ge), which were prepared by direct sputter depositions using nitride targets. These contacts could alleviate the intrinsic Fermi-level pinning (FLP) position toward the conduction band edge. It was revealed that this phenomenon is induced by an amorphous interlayer (a-IL) containing nitrogen atoms at the nitride/Ge interfaces. The strength of FLP alleviation positively depended on the thickness of a-IL. TiN/Ge and ZrN/Ge contacts with ∼2 nm-thick a-ILs showed strong FLP alleviations with hole barrier heights (Φ{sub BP}) in the range of 0.52–56 eV, and a HfN/Ge contact with an ∼1 nm-thick a-IL showed a weaker one with a Φ{sub BP} of 0.39 eV. However, TaN/Ge contact without a-IL did not show such FLP alleviation. Based on the results of depth distributions for respective elements, we discussed the formation kinetics of a-ILs at TiN/Ge and ZrN/Ge interfaces. Finally, we proposed an interfacial dipole model to explain the FLP alleviation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

A transmission line method for evaluation of vertical InAs nanowire contacts

In this paper, we present a method for metal contact characterization to vertical semiconductor nanowires using the transmission line method (TLM) on a cylindrical geometry. InAs nanowire resistors are fabricated on Si substrates using a hydrogen silsesquioxane (HSQ) spacer between the bottom and top contact. The thickness of the HSQ is defined by the dose of an electron beam lithography step, and by varying the separation thickness for a group of resistors, a TLM series is fabricated. Using this method, the resistivity and specific contact resistance are determined for InAs nanowires with different doping and annealing conditions. The contacts are shown to improve with annealing at temperatures up to 300 °C for 1 min, with specific contact resistance values reaching down to below 1 Ω µm{sup 2}.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Fabricating Ohmic contact on Nb-doped SrTiO{sub 3} surface in nanoscale

Fabricating reliable nano-Ohmic contact on wide gap semiconductors is an important yet difficult step in oxide nanoelectronics. We fabricated Ohmic contact on the n-type wide gap oxide Nb-doped SrTiO{sub 3} in nanoscale by mechanically scratching the surface using an atomic force microscopy tip. Although contacted to high work function metal, the scratched area exhibits nearly linear IV behavior with low contact resistance, which maintains for hours in vacuum. In contrast, the unscratched area shows Fowler–Nordheim tunneling dominated Schottky rectifying behavior with high contact resistance. It was found that the Ohmic conductivity in the scratched area was drastically suppressed by oxygen gas indicating the oxygen vacancy origin of the Ohmic behavior. The surface oxygen vacancy induced barrier width reduction was proposed to explain the phenomena. The nanoscale approach is also applicable to macroscopic devices and has potential application in all-oxide devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Temperature dependence of contact resistance at metal/MWNT interface

Although contact resistance of carbon nanotube (CNT) is one of the most important factors for practical application of electronic devices, a study regarding temperature dependence on contact resistance of CNTs with metal electrodes has not been found. Here, we report an investigation of contact resistance at multiwalled nanotube (MWNT)/Ag interface as a function of temperature, using MWNT/polydimethylsiloxane (PDMS) composite. Electrical resistance of MWNT/PDMS composite revealed negative temperature coefficient (NTC). Excluding the contact resistance with Ag electrode, the NTC effect became less pronounced, showing lower intrinsic resistivity with the activation energy of 0.019 eV. Activation energy of the contact resistance of MWNT/Ag interface was determined to be 0.04 eV, two times larger than that of MWNT-MWNT network. The increase in the thermal fluctuation assisted electron tunneling is attributed to conductivity enhancement at both MWNT/MWNT and MWNT/Ag interfaces with increasing temperature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films

This work explores the application of transparent nitrogen doped copper oxide (CuO{sub x}:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuO{sub x}:N sputtered directly onto crystalline silicon is able to form an Ohmic contact. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are used to characterise the structural and physical properties of the CuO{sub x}:N films. Both the oxygen flow rate and the substrate temperature during deposition have a significant impact on the film composition, as well as on the resulting contact resistivity. After optimization, a low contact resistivity of ∼10 mΩ cm{sup 2} has been established. This result offers significant advantages over conventional contact structures in terms of carrier transport and device fabrication.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Thermal conductivity of two-dimensional disordered fibrous materials defined by interfiber thermal contact conductance and intrinsic conductivity of fibers

A general framework for the theoretical analysis and numerical calculations of the effective thermal conductivity of two-dimensional homogeneous and isotropic disordered fibrous materials is developed in this work based on the model of random contacts between soft-core spherocylinders. The analysis accounts for the interfiber contact conductance and intrinsic conductivity of fibers and is performed in a wide space of governing parameters that includes the fiber aspect ratio, Biot number calculated for a single thermal contact between fibers, and material density ranging from values corresponding to the percolation threshold up to those characteristic of dense fiber networks. For dense networks, exact theoretical equations for the thermal conductivity of materials composed of spherocylinders with an arbitrary aspect ratio and Biot number are derived. The effect of the intrinsic conductivity of fibers on the thermal transport in fibrous materials is found to depend on the density of contacts and can be significant in sufficiently dense fiber networks even if the Biot number for a single thermal contact is small. Semiempirical corrections to the theoretical equations are derived for small and moderate fiber densities. The power law exponent describing the approximate dependence of the conductivity on the density parameter is found to vary from values close to 1 up to values exceeding 2 when evaluated within different finite ranges of the density parameter. This finding explains the variability of scaling laws for thermal conductivity of fibrous materials suggested in the literature based on numerical simulations performed in different regions of the space of material parameters.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Numerical simulation of high-efficiency, scalable, all-back-contact Cd(Se,Te) solar cells

In this work, all-back-contact thin film photovoltaic devices in lattice back contact (LBC) configuration are studied by device simulation to set the requirements for achieving efficiency > 20% with lateral contact spacing > 50 µm. The numerical device model is first validated against published data for an LBC perovskite device and extended to predict the performance of Cd(Se,Te)-based polycrystalline devices. Recent advances in the electronic properties of Cd(Se,Te) films have made high efficiency LBC devices feasible with industrially-scalable contact dimensions. Constraints on bulk, interface, and contact properties are quantified and discussed

14 SOLAR ENERGY↗
DOE OSTI2022

Effects of thin metal contacts on few-layer van der Waals ferrielectric CuInP 2 S 6

Out-of-plane polarized ferroelectric materials in a capacitive structure provide a key component for several technological applications. Furthermore, two-dimensional materials are expected to aid in the quest for both ultrathin and flexible electronics. Of the various two-dimensional ferroelectrics with out-of-plane polarization, CuInP 2 S 6 is special in that the Cu atoms are highly mobile and it has been shown to possess both low- and high-polarization states. Here, using density-functional-theory calculations, we explore the stabilization of the ferroelectric state for several prototypical metal contacts (Gr, Ni, Cu, Au, and Ag). In all cases, we find that the ferroelectric state can be stabilized at fewer layers than in the freestanding case. For all of the considered conventional metal contacts, we also find the existence of a quasi-ferroelectric state that stabilizes a polar phase for thicknesses greater than two layers of CIPS. In the cases of Au and Ag, interfacial alignment and strain can be used to stabilize ferroelectricity at the bilayer limit. Furthermore, we find that the strength of the interaction between the contact and CuInP 2 S 6 also leads to stabilization of the high-polarization state when ferroelectricity is stabilized. Lastly, energy-barrier calculations show that the system is still switchable in the presence of contact doping from the metal contacts.

2D materials↗
DOE OSTI2024

Shock and contact interaction with a simple cubic array of particles

Shock-particle interaction is a fundamental pillar of multiphase compressible flows that has been studied at length for many decades. However, little attention has been paid to the interaction of particles with a contact interface that follows a shock in shock tube experiments and applications relating to blast waves. Presently, the phenomenon is studied at the microscale via particle resolved simulations of shock contact systems interacting with a structured array of particles as well as isolated particles. Simulations are conducted at particle volume fractions of 0%, 5%, 10%, 20%, and 40% at three contact Mach numbers. Additionally, the diaphragm position is varied, which controls the timing of the shock arrival time in relation to the contact arrival time. The modification to the drag on these stationary particles by the contact is analyzed and compared to the compressible Maxey–Riley–Gatignol model, which is adequate for the single particle cases but does not account for fluid mediated particle–particle interactions.

Mechanics↗
DOE OSTI2024

High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

This Letter reports the stability of regrown and alloyed Ohmic contacts to AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) for high temperature applications up to 500 °C. Transfer length method (TLM) measurements from 25 to 500 °C in air show that the regrown contacts appear to be stable up to 500 °C during short term (approximately 1 h) testing, while alloyed contacts appear to decrease in contact resistance from 300 to 500 °C though increases in the error bounds due to increase sheet resistance make it difficult to conclude definitely. Additionally, longer term testing shows both technologies remain stable at least up to 48 h at 500 °C, after which the large increase in sheet resistance makes the measurement uncertainty too large to conclude definitively. Advanced microscopy images indicate both the regrown and alloyed contact regions remain structurally intact after prolonged high temperature exposure with no visible degradation in crystallinity or metal composition.

Physics↗
DOE OSTI2024

Properties of photocurrent and metal contacts of highly resistive ultrawide bandgap semiconductors

Ultrawide bandgap (UWBG) semiconductors inherently exhibit very high electrical resistivities. This property presents not only challenges in probing their electrical transport properties but also difficulties to fabricate, understand, and characterize the electrical properties of metal contacts on these materials. Here, we report the measurements and analysis of the applied electric field dependence of photocurrent to reveal the effect of metal contacts on the transport properties of highly resistive h-BN. Our results indicate that even for h-BN with a room temperature resistivity as high as 1014 Ω cm, the as-deposited metal contact is not a completely blocking type as commonly assumed in previous analyses for other large bandgap insulating materials. By modifying the boundary condition between the metal/semiconductor interface, a quantitative description has been obtained, which can be used to determine if the metal contact is Ohmic or blocking type. This quantitative description should be applicable to all UWBG semiconductors with extremely high electrical resistivities. The work also provides a better understanding of how the metal contact type affects the transport properties of UWBG semiconductors in general.

Physics↗
DOE OSTI2020

AC loss and contact resistance in REBCO CORC ® , Roebel, and stacked tape cables

Abstract Many high-temperature superconductor (HTS) applications require superconducting cables with high currents while operating in an alternating magnetic field. HTS cables should be composed of numerous superconducting tapes to achieve the required current capacity. Alternating current and magnetic fields cause AC losses in such cables and can provoke conductor instability. AC losses and contact resistances were measured of several cable designs based on commercially available REBCO tapes at the University of Twente. The AC loss was measured under identical conditions for eight REBCO conductors manufactured according to three types of cabling methods—CORC ® (Conductor on Round Core), Roebel, and stacked tape, including a full-size REBCO CICC (cable in conduit conductor). The measurements were done at T = 4.2 K without transport current in a sinusoidal AC magnetic field of 0.4 T amplitude and frequencies from 5 to 55 mHz. The AC loss was measured simultaneously by calibrated gas flow calorimeter utilizing the helium boil-off method and by the magnetization method using pick-up coils. Also, the AC loss of two CORC® conductors and a Roebel cable was measured at 77 K. Each conductor was measured with and without background field of 1 T. The measured AC coupling loss in the CORC ® and Roebel conductors is negligible at 4.2 K for the applied conditions while at 77 K coupling loss was observed for all conductors. The absence of coupling loss at 4.2 K can be explained by shielding of the conductor interior; this is confirmed with measurement and calculation of the penetration field of CORC ® and Roebel cables. The inter-tape contact resistance was measured for CORC ® and stacked tape samples at 4.2 and 77 K. It was demonstrated that a short heat treatment of CORC ® conductor with solder-coated tapes activates tape-to-tape soldering and decreases the contact resistance. The reduction of contact resistance by two orders in magnitude to tens of nΩm is comparable with the interstrand contact resistance in ITER Nb 3 Sn type conductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

An experimental study to investigate magnetic field and winding force-dependent contact resistance of NI REBCO coil

Abstract This paper reports the magnetic field and winding force-dependent contact resistance, also known as characteristic resistance, of no-insulation (NI) REBCO coil. Three NI coils were wound with different winding forces ( < 1 kgf, 3 kgf, and 5 kgf) using the same REBCO-coated conductor, and they were tested at 4.2 K in a background field of 0, 5, 10, and 14 T. The contact resistance of each coil is measured at each field. As a result of the measurements, we draw two conclusions. First, a quadratic function for magnetic field intensity reasonably reproduces the measurement results of each NI test coil’s magnetic field-dependent contact resistance, where the practical fit function’s coefficients are determined depending on the winding force. Second, the contact resistance of each coil is partially inconsistent with the magnetoresistance of the electroplated material, i.e. copper, of the REBCO-coated conductor. This paper will present the measurement results in detail, discuss them with Kohler’s rule, and formulate the contact resistance using winding force and magnetic field terms.

Bang, Jeseok (ORCID:0000000247616334)↗