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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30

An Experimental and Numerical Investigation to Characterize the Low-Temperature Heat Release in Stoichiometric and Lean Combustion

This work reports on an experimental and modeling study on the low-temperature heat release (LTHR) characteristics for three RON 90 binary blends (n-heptane blended with isooctane, toluene and ethanol) in a Cooperative Fuel Research (CFR) engine at lean and stoichiometric conditions that are representative of homogeneous charge compression ignition (HCCI) and spark-ignition (SI) end-gas combustion conditions, respectively. An analysis of the end-gas temperature-pressure (T-P) trajectories was performed to identify the intake conditions leading to similar T-P trajectories between the two lambdas for each fuel blend. A heat release analysis was then conducted for the identified cases, where fuel-to-fuel differences in LTHR were identified and found to be sensitive to the operating condition. Simulations were conducted for these cases using a recently updated chemical kinetic model and a 0-D engine model, where good qualitative and reasonable quantitative agreements in LTHR were obtained. Sensitivity analysis was also performed directly on the rates of LTHR, to understand the controlling chemical reactions of LTHR, providing further insights into the fuel-to-fuel differences. The results demonstrate the significant promoting effect of n-heptane on LTHR rates, while inhibiting effects were seen for ethanol and toluene. Also highlighted was the importance of H atom abstraction reactions from the chemistry of each fuel component, which could lead to contradictory fuel behavior depending on the locations of the H site of the abstraction reaction due to the different ensuing pathways for the primary fuel radicals.

LTHR, RON 90 binary blends, sensitivity analysis↗

Synthesis and structural characterization of a flexible metal organic framework {[Ni(dpbz)][Ni(CN 4 ]} n , dpbz = 1,4-bis(4-pyridyl)benzene) with an unusual Ni-N bond

The chartreuse monoclinic Ni-dpbz (Ni(L)[Ni(CN) 4 ], (L = 1,4-Bis(4-pyridyl)benzene, or dpbz) crystal assumes a pillared structure with layers defined by 2-D Ni[Ni(CN) 4 ] n nets and dpbz ligands as pillars, linking between coordinated Ni sites. In addition to the hysteretic adsorption/desorption feature of Ni-dpbz, in half of the parallelepiped-shape space enclosed by the pillars and nets, an additional dpbz ligand was found to link between the open ends of two four-fold Ni sites. This arrangement results in an unusual 5-fold pseudo square-pyramid environment for Ni and a significantly long Ni–N distance of 2.369(4) Å. The presence of disordered dimethyl sulfoxide (DMSO) solvent molecules give rise to the formula of Ni(dpbz)[Ni(CN) 4 ]·½dpbz·0.44DMSO. Sorption isotherms showed flexible behavior during the adsorption and desorption of CO 2 .

Wong-Ng, Winnie↗

Degradation-related defect level in weathered silicon heterojunction modules characterized by deep level transient spectroscopy

Commercial silicon heterojunction photovoltaic modules, known as amorphous-silicon-based heterojunction with intrinsic thin-film layer (HIT) modules, show average degradation after 10 years in the field. HIT modules weathered outdoors in Colorado and Florida display mostly uniform decreases in intensity when mapped with photoluminescence (PL) imaging compared to a control module. Flash-table-based current-voltage curves show that degradation is dominated by voltage loss. Samples are cored from each of the modules, and deep level transient spectroscopy (DLTS) detects three electron-trap defect states in all modules with activation energies of electron emission from the defects of 0.07, 0.16, and 0.50 eV. DLTS measurements on the weathered modules show an additional deep-level, electron-trap defect state with an activation energy of 0.51 eV and a trap density of approximately 10 12 cm –3 . The capture rate is measured using varying short filling pulse times, and the resulting capture cross section is estimated to be 1.1x10 –16 cm 2 . The development of the weathering-related defect level correlates to decreases in carrier lifetime, PL intensity, and module voltage. Various depths of the space charge region are probed with increments in applied reverse bias and filling-pulse bias. Furthermore, this DLTS depth profiling shows a trend of trap density increasing with less applied reverse bias, suggesting that the weathering-related defect increases carrier recombination toward the interface between the bulk silicon wafer and the junction-forming amorphous-silicon passivation layers.

14 SOLAR ENERGY↗