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At least 541 records · Page 30

Large Fermi energy modulation in graphene transistors with high-pressure O{sub 2}-annealed Y{sub 2}O{sub 3} topgate insulators

We demonstrate a considerable suppression of the low-field leakage through a Y{sub 2}O{sub 3} topgate insulator on graphene by applying high-pressure O{sub 2} at 100 atm during post-deposition annealing (HP-PDA). Consequently, the quantum capacitance measurement for the monolayer graphene reveals the largest Fermi energy modulation (E{sub F} = ∼0.52 eV, i.e., the carrier density of ∼2 × 10{sup 13} cm{sup −2}) in the solid-state topgate insulators reported so far. HP-PDA is the robust method to improve the electrical quality of high-k insulators on graphene.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of the band structure of InGaN/GaN quantum well on the surface plasmon enhanced light-emitting diodes

The spontaneous emission (SE) of InGaN/GaN quantum well (QW) structure with silver(Ag) coated on the n-GaN layer has been investigated by using six-by-six K-P method taking into account the electron-hole band structures, the photon density of states of surface plasmon polariton (SPP), and the evanescent fields of SPP. The SE into SPP mode can be remarkably enhanced due to the increase of electron-hole pairs near the Ag by modulating the InGaN/GaN QW structure or increasing the carrier injection. However, the ratio between the total SE rates into SPP mode and free space will approach to saturation or slightly decrease for the optimized structures with various distances between Ag film and QW layer at a high injection carrier density. Furthermore, the Ga-face QW structure has a higher SE rate than the N-face QW structure due to the overlap region of electron-hole pairs nearer to the Ag film.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A linear phase demodulator

Circuit operates on feedback principle to reduce modulation index of received signal, and thus reinserts carrier component in suppressed carrier signal. Device can demodulate phase-shift-keyed signals which do not have carrier component, and it has linear region of + or - 150 deg.

Rippy, R. R.↗

A three channel telemetry system

A three channel telemetry system intended for biomedical applications is described. The transmitter is implemented in a single chip using a 2 micron BiCMOS processes. The operation of the system and the test results from the latest chip are discussed. One channel is always dedicated to temperature measurement while the other two channels are generic. The generic channels carry information from transducers that are interfaced to the system through on-chip general purpose operational amplifiers. The generic channels have different bandwidths: one from dc to 250 Hz and the other from dc to 1300 Hz. Each generic channel modulates a current controlled oscillator to produce a frequency modulated signal. The two frequency modulated signals are summed and used to amplitude modulate the temperature signal which acts as a carrier. A near-field inductive link telemeters the combined signals over a short distance. The chip operates on a supply voltage anywhere from 2.5 to 3.6 Volts and draws less than 1 mA when transmitting a signal. The chip can be incorporated into ingestible, implantable and other configurations. The device can free the patient from tethered data collection systems and reduces the possibility of infection from subcutaneous leads. Data telemetry can increase patient comfort leading to a greater acceptance of monitoring.

Lesho, Jeffery C.↗

Telemetering and telecommunications research

The New Mexico State University (NMSU) Center for Space Telemetering and Telecommunications systems is engaged in advanced communications systems research. Four areas of study that are being sponsored concern investigations into the use of trellis-coded modulation (TCM). In particular, two areas concentrate on carrier synchronization research in TCM M-ary phase shift key (MPSK) systems. A third research topic is the study of interference effects on TCM, while the fourth research area is in the field of concatenated TCM systems.

Osborne, William↗

New Schemes for Improved Opto-Electronic Oscillator

The opto-Electronic Oscillator (OEO) has already demonstrated superior spectral purity as a for microwave and millimeter wave reference signals. Experimental results have produced a performance characterized by noise as low as -50 dBc/Hz at 10 Hz and -140 dBc/Hz for a 10 GHz oscillator. This performance is significant because it was produced by an oscillator that was free running. Since the noise in an OEO is independent of the oscillation frequency, the same performance may also be obtained at higher frequency. The recent work in our laboratory has been focused in three areas: 1) realization of a compact OEO based on semiconductor lasers and modulators, 2) reduction of the close-to-carrier noise of the OEO originating from the 1/f noise of the amplifier, and 3) miniaturization of the OEO. In this paper we report on progress made in these areas, and describe future plans to increase the performance and the efficiency of the OEO.

Maleki, Lute↗

Characteristics of Electromagnetic Pulse Propagation in Metal

It is well known that the solution of the diffusion equation for an electromagnetic field with a time harmonic term, e(sup iwt), is in the form of a traveling wave whose amplitude attenuates over distance into a conducting medium. As the attenuation is an increasing function of frequency, the high frequency components attenuate more rapidly than those of low ones upon entering a well conducting object. At the same time, the phase velocity of an individual component is also an increasing function of frequency causing a broadening of the pulse traveling inside a conductor. In the results of our previous study of numerical simulations, the problem of using a gaussian input pulse was immediately clear. First, having the dominant frequency components distributed around zero, the movement of the peak was not well defined. Second, with the amplitude of fourier components varying slowly over a wide range, the dispersion-induced blurring of the peak position was seen to be severe. For the present study, we have used a gaussian modulated single frequency sinusoidal wave, i. e., the carrier, as an input pulse in an effort to improve the issues related to the unclear movement of peak and dispersion as described above. This was based on the following two anticipated advantages: First, the packet moves in a conductor at the group velocity calculated at the carrier frequency, which means it is well controllable. Second, the amplitude of frequency components other than that of the carrier can be almost negligible, such that the effect of dispersion can be significantly reduced. A series of experiments of transmitting electromagnetic pulses through aluminum plates of various thickness was performed to test the validity of the above points. The results of numerical simulation based on wave propagation are discussed with respect to the experimental results. Finally, a simple simulation was performed based on diffusion of a continuous sine wave input and the results are compared with those of a single frequency sinusoidal wave observed over time at difference locations inside a conductor.

Namkung, M.↗

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

Mueller, Carl↗

Unsymmetrical QPSK demodulator

The present invention is a demodulator for demodulating an unsymmetrical QPSK signal (1), i.e., one in which the amplitudes of the I and Q channels are different, and the I and Q channels have been modulated by signals having differnt bit rates. Analog versions of the I and Q modulating baseband signals are first extracted from the carrier. Each baseband signal is then subjected to a bit-rate-matched low pass filter (23, 13). The channel having the higher bit rate is subjected to a delay (32) to time-align the two baseband signals. The time-aligned filtered signals are then amplified by amplifiers (22, 12) having unequal gains that are preselected to substantially equalize the amplifier (22, 12) outputs. The amplified time-aligned filtered signals are then subjected to a phase error (E) generating means (15, 25, 16, 26, 34). The phase error (E) is passed through a loop integrator (38) and a VCO (30) and back to the baseband signal extracting means to complete a phase lock loop. Frequency searching means (40), frequency lock detect means (42, 44), and AGC control ( 46, 8) are optionally present.

Guyer, Edward↗

Investigation into the Origin of the RF Phase Noise for the LISA Laser Transmitter

The Laser Interferometer Space Antenna (LISA) mission is a collaborative consortium led by the European Space Agency (ESA)in cooperation with the National Aeronautics and Space Administration (NASA). LISA’s goal is to capture gravitational wave events, such as spacetime distortions caused by massive orbiting bodies. Multiple low noise, single frequency master oscillator power amplifier (MOPA) lasers with a polarization-maintaining Yb-fiber amplifier will serve as the light sources for the LISA observatory. The NASA Goddard Space Flight Center (GSFC)is currently developing the laser transmitters for this project. The LISA lasers will carry radio frequency (RF)sidebands for exchanging reference RF clock information between spacecrafts. Excess phase noise, especially carrier-sideband differential phase noise added to the modulation side band by the phase modulator and the fiber amplifier, becomes a concern. In the gravitational wave frequency ranges, leading sources of this RF “differential” phase noise can be both intrinsic and extrinsic. Examples of intrinsic sources include thermal load on the active fiber, thermo-mechanical induced birefringence, and nonlinearities in the various passive and active fibers. Extrinsic sources can include external temperature fluctuations and infrasonic mechanical strain or vibrations. These noise spectra usually include both white and pink (1/f) thermal noise contributions. This work investigates the physical origins and impact of these sources of RF phase noise, and their characteristic spectra and management will be discussed.

Laser Interferometer Space Antenna↗

Observations of the Earth's magnetic field from the shuttle: Using the Spartan carrier as a magnetic survey tool

The shuttle-deployed and recovered Spartan shows promise as an inexpensive and simple support module for potential field measurements. The results of a preliminary engineering study on the applications of the Spartan carrier to magnetic measurements shows: (1) Extension of the mission duration to as long as 7 days is feasible but requires more reconfiguration of the internal systems; (2) On-board recording of Global Positioning System signals will provide position determination with an accuracy consistent with the most severe requirements; and (3) Making Spartan a magnetically clean spacecraft is straight forward but requires labor-intensive modifications to both the data and power systems. As a magnetic survey tool, Spartan would allow surveys at regularly spaced intervals and could make quick-reaction surveys at times of instability in the secular variation.

Webster, W. J., Jr.↗

Carrier Dynamics of Polar, Semipolar, and Nonpolar InGaN/GaN LEDs Measured by Small-Signal Electroluminescence

The carrier dynamics in InGaN/GaN light-emitting diodes (LEDs) are directly tied to their efficiency and maximum modulation speed, which are important metrics for solid-state lighting, displays, and optical communication. In this work, we measure the carrier dynamics of a variety of InGaN/GaN LEDs using small-signal electroluminescence methods [1]. A rate equation approach and associated small-signal circuit are used to model carrier injection, recombination in the active region, recombination in the cladding regions, and carrier escape. The model is fit to the measured optical frequency response (S21) and input impedance (S11) of the LEDs to extract the various carrier lifetimes, the carrier density, and the radiative and non-radiative recombination rates. We specifically study planar nonpolar and semipolar LEDs, which show record-high modulation speeds for III-nitride LEDs and present the modulation characteristics of core-shell nanowire-based LEDs. The planar nonpolar m-plane ($101\bar{0}$) micro-LEDs achieve a record-high -3dB modulation bandwidth for a III-nitride LED of 1.5 GHz [2]. The -3dB response of an electrically injected nanowire-based micro-LED with nonpolar facets is also reported, showing a -3dB bandwidth of 1.2 GHz [3]. The high speed is attributed to the shorter carrier lifetime associated with the nonpolar orientation. We also study the carrier dynamics in semipolar ($20\bar{2}\bar{1}$) LEDs for various temperatures [4]. Finally, we present carrier dynamics measurements on commercial-grade c-plane epitaxy for various active region designs, including a wavelength series and a growth quality series. The wavelength series offers insight into the contributions of the quantum confined Stark effect (QCSE) and InGaN material quality on the green gap [5]. The growth quality series investigates the role of non-radiative centers on the LED performance. Extraction of the carrier dynamics using small-signal electroluminescence offers insight into the factors limiting the efficiency and high-speed performance of III-nitride emitters and can be leveraged to ultimately improve the devices.

LEDs, InGaN, electroluminescence, bandwidth, modul↗

Photoinduced phase separation in the lead halides is a polaronic effect

We present a perspective on recent observations of the photoinduced phase separation of halides in multi-component lead-halide perovskites. The spontaneous phase separation of an initial homogeneous solid solution under steady-state illumination conditions is found experimentally to be reversible, stochastic, weakly dependent on morphology, yet strongly dependent on composition and thermodynamic state. Regions enriched in a specific halide species that form upon phase separation are self-limiting in size, pinned to specific compositions, and grow in number in proportion to the steady-state carrier concentration until saturation. These empirical observations of robustness rule out explanations based on specific defect structures and point to the local modulation of an existing miscibility phase transition in the presence of excess charge carriers. A model for rationalizing existing observations based on the coupling between composition, strain, and charge density fluctuations through the formation of polarons is reviewed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Phase Modulator with Terahertz Optical Bandwidth Formed by Multi-Layered Dielectric Stack

An optical phase modulator includes a bandpass multilayer stack, formed by a plurality of dielectric layers, preferably of GaAs and AlAs, and having a transmission function related to the refractive index of the layers of the stack, for receiving an optical input signal to be phase modulated. A phase modulator device produces a nonmechanical change in the refractive index of each layer of the stack by, e.g., the injection of free carrier, to provide shifting of the transmission function so as to produce phase modulation of the optical input signal and to thereby produce a phase modulated output signal.

Andrew S Keys↗

Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering

Abstract The superior size and power scaling potential of ferroelectric-gated Mott transistors makes them promising building blocks for developing energy-efficient memory and logic applications in the post-Moore’s Law era. The close to metallic carrier density in the Mott channel, however, imposes the bottleneck for achieving substantial field effect modulation via a solid-state gate. Previous studies have focused on optimizing the thickness, charge mobility, and carrier density of single-layer correlated channels, which have only led to moderate resistance switching at room temperature. Here, we report a record high nonvolatile resistance switching ratio of 38,440% at 300 K in a prototype Mott transistor consisting of a ferroelectric PbZr 0.2 Ti 0.8 O 3 gate and an R NiO 3 ( R : rare earth)/La 0.67 Sr 0.33 MnO 3 composite channel. The ultrathin La 0.67 Sr 0.33 MnO 3 buffer layer not only tailors the carrier density profile in R NiO 3 through interfacial charge transfer, as corroborated by first-principles calculations, but also provides an extended screening layer that reduces the depolarization effect in the ferroelectric gate. Our study points to an effective material strategy for the functional design of complex oxide heterointerfaces that harnesses the competing roles of charge in field effect screening and ferroelectric depolarization effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ultrafast relaxation of lattice distortion in two-dimensional perovskites

Direct visualization of ultrafast coupling between charge carriers and lattice degrees of freedom in photoexcited semiconductors has remained a long-standing challenge and is critical for understanding the light-induced physical behaviour of materials under extreme non-equilibrium conditions. Here we obtain a direct visualization of the structural dynamics in monocrystalline 2D perovskites. We achieve this by monitoring the evolution of wavevector-resolved ultrafast electron diffraction intensity following above-bandgap high-density photoexcitation. Our analysis reveals a light-induced ultrafast reduction in antiferro-distortion resulting from a strong interaction between the electron–hole plasma and perovskite lattice, which induces an in-plane octahedra rotation towards a more symmetric phase. Correlated ultrafast spectroscopy performed at the same carrier density as ultrafast electron diffraction reveals that the creation of a dense electron–hole plasma triggers the relaxation of lattice distortion at shorter timescales by modulating the crystal cohesive energy. Then we show that the interaction between carrier gas and lattice can be altered by tailoring the rigidity of the 2D perovskite by choosing an appropriate organic spacer layer.

36 MATERIALS SCIENCE↗