Fragile topology in line-graph lattices with two, three, or four gapped flat bands
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Chiu, Christie S. (ORCID:0000000200009107)↗
SEARCH · Engineering Papers
Results for “Band gap”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Nanoscale View of Engineered Massive Dirac Quasiparticles in Lithographic Superstructures
Massive Dirac fermions are low-energy electronic excitations characterized by a hyperbolic band dispersion. They play a central role in several emerging physical phenomena such as topological phase transitions, anomalous Hall effects, and superconductivity. This work demonstrates that massive Dirac fermions can be controllably induced by lithographically patterning superstructures of nanoscale holes in a graphene device. Their band dispersion is systematically visualized using angle-resolved photoemission spectroscopy with nanoscale spatial resolution. A linear scaling of effective mass with feature sizes is reported, underlining the Dirac nature of the superstructures. In situ electrostatic doping dramatically enhances the effective hole mass and leads to the direct observation of an electronic band gap that results in a peak-to-peak band separation of 0.64 ± 0.03 eV, which is shown via first-principles calculations to be strongly renormalized by carrier-induced screening. The methodology demonstrates band structure engineering guided by directly viewing structurally and electrically tunable massive Dirac quasiparticles in lithographic superstructures at the nanoscale.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Quaternary MgSiN 2 -GaN alloy semiconductors for deep UV applications
Ultrawide direct band gap semiconductors hold great promise for deep ultraviolet optoelectronic applications. Here we evaluate the potential of MgSiN 2 -GaN alloys for this purpose. Although MgSiN 2 itself has an indirect gap ~0.4 eV below its direct gap of ~6.5 eV, its different sign lattice mismatch from GaN in two different basal plane directions could avoid the tensile strain which limits Al x Ga 1–x N on GaN for high x. Two octet-rule-preserving structures (with space groups Pmn2 1 and P1n1) of a 50% alloy of MgSiN 2 and GaN are investigated and are both found to have gaps larger than 4.75 eV using quasiparticle self-consistent GW calculations. Both are nearly direct gap in the sense that the indirect gap is less than 0.1 eV lower than the direct gap. Furthermore, their mixing energies are positive yet small, with values of 8 (31) meV/atom for Pmn2 1 (P1n1), indicating only a small driving force toward phase separation.
36 MATERIALS SCIENCE↗
Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices: Preprint
Gallium oxide is an emerging wide band-gap material that has the potential to penetrate the power electronics market in the near future. In this paper, a finite-element gallium oxide semiconductor model is presented that can predict the electrical and thermal characteristics of the device. The finite element model of the two-dimensional device architecture is developed inside the Sentaurus environment. A vertical FinFET device architecture is employed to assess the device's behavior and its static and dynamic behavior. Enhancement-mode device operation is realized with this type of device architecture without the need for any selective area doping. The dynamic thermal behavior of the device is characterized through its short-circuit behavior. Based on the device static and dynamic behavior, it is envisioned that reliable vertical transistors can be fabricated for the power electronics applications.
33 ADVANCED PROPULSION SYSTEMS↗
Anomalous Auger Recombination in PbSe
Using first-principles approaches we find that the Auger recombination in PbSe is anomalous in three distinct ways. First, the direct Auger coefficient is 4 orders of magnitude lower than that of other semiconductors with similar band gaps, a result that can be attributed to the lack of involvement of a heavy-hole band. Second, phonon-assisted indirect Auger recombination prevails, contrary to the common belief that direct Auger is dominant in narrow-gap semiconductors. Third, an unexpectedly weak temperature dependence of the Auger coefficient is observed, which we can now attribute to the indirect nature of the Auger process. The widely accepted explanation of this behavior in terms of an unusual temperature dependence of the band gap is only a secondary effect. Furthermore, our results elucidate the mechanisms underlying the anomalous Auger recombination in IV-VI semiconductors in general, which is critical for understanding and engineering carrier transport.
36 MATERIALS SCIENCE↗
Modeling the Photoelectrochemical Evolution of Lead-Based, Mixed-Halide Perovskites Due to Photosegregation
Lead-based, mixed-halide perovskites such as methylammonium lead iodide-bromide [MAPb(I 1-x Br x ) 3 ] undergo anion photosegregation under illumination. This is observed as low band gap photoluminescence from photogenerated iodine-rich domains due to favorable band offsets that induce carrier funneling into them. Unfortunately, theoretical rationalizations of mixed-halide photosegregation are complicated by biases inherent to photoluminescence-based observations. Recent compositionally-weighted X-ray diffraction (XRD) measurements now reveal broad distributions of photosegregated stoichiometries not captured by existing photosegregation models. To better bridge experiment and theory, we perform kinetic Monte Carlo (KMC) simulations of photosegregation within the context of a band gap-based thermodynamic model, which has previously accounted for numerous experimental observations. Our KMC simulations are modified to consider high carrier density Fermi-Dirac statistics that result from carrier funneling and accumulation within photosegregated I-rich domains. Obtained KMC results reproduce broad x terminal distributions seen experimentally and illustrate how they are characterized by a central, heavily I-enriched stoichiometry. I-rich domain “drifting” during photosegregation rationalizes the long photosegregation timescales seen experimentally with drifting simultaneously producing a wake of variable stoichiometry I-rich inclusions that form the lion’s share of stoichiometric heterogeneities seen in compositionally-weighted XRD measurements. These simulations and accompanying rationalizations further reveal a general criterion for realizing favorable free energies to induce demixing. Central to the criterion is the statistical occupation of low gap inclusions in the parent alloy by excitations. Furthermore, the resulting model thus provides a general framework for conceptualizing mixed-halide perovskite light and temperature sensitivities, mediated by photocarriers.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Cohesion and excitations of diamond-structure silicon by quantum Monte Carlo: Benchmarks and control of systematic biases
We have carried out quantum Monte Carlo (QMC) calculations of silicon crystal focusing on the accuracy and systematic biases that affect the electronic structure characteristics. The results show that 64 and 216 atom supercells provide an excellent consistency for extrapolated energies per atom in the thermodynamic limit for ground, excited, and ionized states. We have calculated the ground state cohesion energy with both systematic and statistical errors below ≈ 0.05 eV. The ground state exhibits a fixed-node error of only 1.3(2)% of the correlation energy, suggesting an unusually high accuracy of the corresponding single-reference trial wave function. We obtain a very good agreement between optical and quasiparticle gaps that affirms the marginal impact of excitonic effects. Our most accurate results for band gaps differ from the experiments by about 0.2 eV. This difference is assigned to a combination of residual finite-size and fixed-node errors. In conclusion, we have estimated the crystal Fermi level referenced to vacuum that enabled us to calculate the edges of valence and conduction bands in agreement with experiments.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Chiral electronic excitations in the quasi-two-dimensional Rashba system BiTeI
The optical transitions between spin-polarized bands of the quasi-two-dimensional Rashba system BiTeI are investigated using polarization-resolved resonant Raman spectroscopy. We detect chiral excitations between states with opposite helicity and compare spectra to calculations within a three-band model. Using the resonant Raman excitation profile, we deduce the Rashba parameters and band gaps of the higher conduction bands near the Fermi level, and compare the parameters to values obtained by ab initio density functional theory.
36 MATERIALS SCIENCE↗
Three-dimensionally ordered array of air bubbles in a polymer film
We report the formation of a three-dimensionally ordered array of air bubbles of monodisperse pore size in a polymer film through a templating mechanism based on thermocapillary convection. Dilute solutions of a simple, coil-like polymer in a volatile solvent are cast on a glass slide in the presence of moist air flowing across the surface. Evaporative cooling and the generation of an ordered array of breath figures leads to the formation of multilayers of hexagonally packed water droplets that are preserved in the final, solid polymer film as spherical air bubbles. The dimensions of these bubbles can be controlled simply by changing the velocity of the airflow across the surface. When these three-dimensionally ordered macroporous materials have pore dimensions comparable to the wavelength of visible light, they are of interest as photonic band gaps and optical stop-bands.
Non-NASA Center↗
Quantum Well Infrared Photodetectors: Device Physics and Light Coupling
It is customary to make infrared (IR) detectors in the long wavelength range by utilizing the interband transition which promotes an electron across the band gap (Eg) from the valence band to the conduction.
QWIPs wavelength well width barrier compositon car↗
Electronic properties of epitaxial La 1- x Sr x RhO 3 thin films
Here, we report on the synthesis and electronic properties of epitaxial perovskite La 1- x Sr x RhO 3 thin films. Thin films with a Sr content ranging from $\textit{x}$ = 0 to 0.5 have been grown using molecular beam epitaxy. Transport and x-ray photoemission spectroscopy data reveal an insulator-metal-insulator transition, accompanied by a $\textit{p-}$ to $\textit{n}-$ type carrier change observed in Hall measurements. Combined with theoretical calculations, we find that the addition of Sr does not directly dope carriers into the conduction band, but rather induces localized Rh 4$\textit{d}$ states within the LaRhO 3 band gap. The bandwidth of the impurity band increases with Sr content, eventually causing the valence band (VB) and the localized Rh 4$\textit{d}$ band to overlap, which explains the first insulator-to-metal transition occurring at $\textit{x}$ = 0.35. For Sr content $\textit{x}$ > 0.4, possible cation ordering results in an increase of the gap between the VB and the Rh 4$\textit{d}$ band, leading to the second metal-to-insulator transition. We map out the electronic phase diagram of the Sr-doped LaRhO 3 system and suggest strategies to engineer the electronic states in rhodate systems via delocalizing the Rh 3+ states.
36 MATERIALS SCIENCE↗
Optoelectronic properties of bent two-dimensional materials from first-principles methods combined with machine learning
A material’s interaction with light is highly relevant in the design of nanoelectronic devices such as photodiodes, solar cells, photocatalytic cells, phototransistors, and photodetectors. The interaction of a material with light can be altered by mechanical deformation. Fine tuning of the optical properties can be achieved by mechanical bending that alters the electronic structure. Optical properties strongly depend on band gaps, therefore any alteration in the band structure results in a changed optical response of the material. The impact of bending was explored in this project. The goal of this project was to assess the impact of mechanical bending of two-dimensional transition metal dichalcogenides on their optoelectronic properties, using first-principles methods. These first-principles approximations are largely built upon many-body theory for the optical properties of magnetic and topological nanoribbons. GW-BSE is standard for optical absorption, but it is less practical for collective excitations as it was shown in model systems. Time-dependent density functional theory, however, has better promises for collective excitations in low-dimensional materials.
36 MATERIALS SCIENCE↗
Optically induced changes in the band structure of the Weyl charge-density-wave compound (TaSe 4 ) 2 I
Collective modes are responsible for the emergence of novel quantum phases in topological materials. In the quasi-one dimensional (1D) Weyl semimetal (TaSe 4 ) 2 I , a charge density wave (CDW) opens band gaps at the Weyl points, thus turning the system into an axionic insulator. Melting the CDW would restore the Weyl phase, but 1D fluctuations extend the gapped regime far above the 3D transition temperature (T CDW = 263 K), thus preventing the investigation of this topological phase transition with conventional spectroscopic methods. Here we use a non-equilibrium approach: we perturb the CDW phase by photoexcitation, and we monitor the dynamical evolution of the band structure by time- and angle-resolved photoelectron spectroscopy. We find that, upon optical excitation, electrons populate the linearly dispersing states at the Fermi level (E F ), and fill the CDW gap. The dynamics of both the charge carrier population and the band gap renormalization (BGR) show a fast component with a characteristic time scale of a few hundreds femtoseconds. However, the BGR also exhibits a second slow component on the µs time scale. The combination of an ultrafast response and of persistent changes in the spectral weight at E$_\mathrm{F}$, and the resulting sensitivity of the linearly dispersing states to optical excitations, may explain the high performances of (TaSe 4 ) 2 I as a material for broadband infrared photodetectors.
36 MATERIALS SCIENCE↗
Nanostructured Materials Developed for Solar Cells
There has been considerable investigation recently regarding the potential for the use of nanomaterials and nanostructures to increase the efficiency of photovoltaic devices. Efforts at the NASA Glenn Research Center have involved the development and use of quantum dots and carbon nanotubes to enhance inorganic and organic cell efficiencies. Theoretical results have shown that a photovoltaic device with a single intermediate band of states resulting from the introduction of quantum dots offers a potential efficiency of 63.2 percent. A recent publication extended the intermediate band theory to two intermediate bands and calculated a limiting efficiency of 71.7 percent. The enhanced efficiency results from converting photons of energy less than the band gap of the cell by an intermediate band. The intermediate band provides a mechanism for low-energy photons to excite carriers across the energy gap by a two-step process.
Bailey, Sheila G.↗
M06-SX screened-exchange density functional for chemistry and solid-state physics
Significance Density functionals with Hartree–Fock exchange have been widely used for a wide range of chemical applications, but the nonlocal character of exchange makes long-range exchange computationally expensive for solid-state calculations with periodic boundary conditions, and full exchange is nonphysical for condensed-phase systems. Here, we present a screened-exchange (SX) density functional, M06-SX, that is especially designed to have good accuracy for both solid-state physics and chemical applications with less computational cost than full Hartree–Fock exchange. The M06-SX functional gives accuracy comparable to functionals with full Hartree–Fock exchange for predicting chemical properties of molecules, while also being practical with good accuracy for plane wave calculations on band gaps and lattice constants of solids.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Applications of Novel Epitaxy Techniques to the Growth of CrSi(sub 2)
CrSi sub 2 is of technological interest because it is a silicon-based semiconductor with a small band gap.
mesotaxy-produced template layers and allotaxy↗
Magnetic cations doped into a double perovskite semiconductor
Here we report two solid solutions based on the magnetic ion doping of the double perovskite oxide Sr 2 GaSbO 6 : Sr 2 Ga 1-x Cr x SbO 6 (0.1 ≤ x ≤ 0.4) and Sr 2 Ga 1-x Fe x SbO 6 (0.1 ≤ x ≤ 0.4). All compositions crystallize in the same space group ($I4/m$) as their undoped parent phase Sr 2 GaSbO 6 , with the trivalent magnetic cations Cr 3+ or Fe 3+ partially substituting for non-magnetic Ga 3+ in one of the B-cation sites. The Cr- and Fe-doped phases display dominant antiferromagnetic coupling among the dopant magnetic moments, and exhibit decreasing band gaps with increasing substitution level.
antiferromagnetic coupling↗
Observation of [VCu1–Ini2+VCu1–] Defect Triplets in Cu-Deficient CuInS2
Copper indium disulfide (CuInS2) is a semiconductor with a direct energy band gap of 1.53 eV, an optimal value for highly efficient thin-film solar cells. But it has reached only ~ 11 % power conversion efficiency, far less than the theoretically achievable value of ~ 30 %. The cause of this low performance is not understood. A single crystal grown from 1 mol% Cu-deficient melt was studied, using atomic resolution high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) and electron dispersive spectroscopy (EDS). While the bulk crystal is exactly stoichiometric CuInS2, it contains nanometer-thick, structurally coherent, Cu-deficient interphases that form along rotational twin boundaries in the {112} plane. Transition zones from bulk crystal to interphase are observed, where In is seen to move from its normal site InIn in the chalcopyrite structure to a tetrahedral interstitial site Ini, while Cu remains in its normal CuCu position. Two InIn rows of the bulk crystal merge into one row of Ini, causing excess Ini in the interphase. The concentrations of CuCu and Ini reflect a ratio of Cu vacancies, VCu, to excess Ini of ~ 2. Their relative lattice positions, and the high electrical resistivity of the crystal, suggests that VCu and excess Ini ‘precipitate’ as self-compensating, electrically neutral, [VCu1- Ini2+ VCu1-] defect triplets. This is the first atomic-level observation of the ordered defect that has been invoked as the basic structural modifier in chalcopyrite compound homologs. The interphases introduce an optical gap of 1.47 eV. Electron trapping in band tail states, evident from a photoconductivity exponent of 0.54, is the likely cause of an unusually low electron mobility of 0.1 cm2V-1s-1. The overall result is that making CuInS2 slightly copper-poor inserts nanometer-thick layers of the interphase into the bulk crystal. This study shows that apparently conflicting results of the effect of Cu deficiency on CuInS2 thin-film solar cells may be resolved by analyzing structure and composition at nanometer spatial resolution.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗