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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Surface voltage gradient role in high voltage solar array-plasma interaction: Center Director's discretionary fund

A large amount of experimental and analytical effort has been directed toward understanding the plasma sheath growth and discharge phenomena which lead to high voltage solar array-space plasma interactions. An important question which has not been addressed is how the surface voltage gradient on such an array may affect these interactions. The results of this study indicate that under certain conditions, the voltage gradient should be taken into account when evaluating the effect on a solar array operating in a plasma environment.

Carruth, M. R., Jr.↗
DOE OSTI2025

On the Efficacy of Repeat Voltage Holds for Conditioning and Calendar Life Testing of Graphite and Silicon Cells

Voltage-hold (V-hold) protocols have shown promise toward calendar lifetime analysis of cells with graphite (Gr) and silicon (Si) anodes. In this work, repeat V-holds are performed on Gr and Si cells paired with lithium iron phosphate cathodes to delineate their beneficial role in formation and conditioning. We find that V-hold at the top of charge supplements constant current cycling in conditioning the cell to higher capacities for both Gr and Si cells after the first V-hold. A reduced order model provides the irreversible capacity proportions of each V-hold. With each repeat V-hold, parasitic loss of lithium to the solid electrolyte interphase (SEI) decreases on both Gr and Si cells. Gr cells show the square-root-of-time capacity loss behavior within 200 h of V-hold, indicative of its fast relaxation and low impact of reference performance test cycles on the SEI growth. Lifetime estimates from repeat V-holds on Gr can reach years. Si exhibits longer transition times from kinetic to diffusion-limited SEI growth, evidenced by the 400 h and 200 h holds showing square-root-of-time and linear behavior, respectively. Lifetime predictions from repeat V-holds on Si only reach 1–2 months, highlighting its limitations. Recommended duration of V-holds for Si cells should be ≥400 h.

25 ENERGY STORAGE↗
DOE OSTI2022

Propagation of non-Gaussian voltage angle fluctuations in high-voltage power grids

Recent measurements have reported non-Gaussian tails in the distribution of frequency data in electric power grids. Large frequency deviations may induce grid instabilities and it is therefore crucial to understand how noise disturbances with long, non-Gaussian tails propagate. Here, we investigate how fluctuations in power feed-in, characterized by non-zero cumulants of their distribution, propagate through high-voltage power grids. Unlike previous investigations which focused on the white-noise limit, we consider the limit of long noise correlation time, where power feed-in fluctuates over times longer than the inherent dynamical time scales of the grid - the relevant regime for large-scale, high-voltage distribution grids. In this work, we show that in this limit, the skewness and kurtosis of the power feed-in distribution propagate similarly as its variance, independently of the distribution of inertia. Non-Gaussianities from individual sources of noise therefore persist throughout the entire network. This finding is corroborated by numerical results on a realistic model of the synchronous grid of continental Europe.

42 ENGINEERING↗
DOE OSTI2022

Quaternary structure independent folding of voltage-gated ion channel pore domain subunits

Every voltage-gated ion channel (VGIC) has a pore domain (PD) made from four subunits, each comprising an antiparallel transmembrane helix pair bridged by a loop. The extent to which PD subunit structure requires quaternary interactions is unclear. In this report we present crystal structures of a set of bacterial voltage-gated sodium channel (BacNa V ) 'pore only' proteins that reveal a surprising collection of non-canonical quaternary arrangements in which the PD tertiary structure is maintained. This context-independent structural robustness, supported by molecular dynamics simulations, indicates that VGIC-PD tertiary structure is independent of quaternary interactions. This fold occurs throughout the VGIC superfamily and in diverse transmembrane and soluble proteins. Strikingly, characterization of PD subunit-binding Fabs indicates that non-canonical quaternary PD conformations can occur in full-length VGICs. Together, our data demonstrate that the VGIC-PD is an autonomously folded unit. This property has implications for VGIC biogenesis, understanding functional states, de novo channel design, and VGIC structural origins.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2022

Survey and Benchmark of Benefits of High Voltage SiC Applications in Medium Voltage Power Distribution Grids

The main objective of this survey and benchmark study is to identify and document potential high-impact applications in today's and future medium voltage (MV) distribution grids that will significantly benefit from high voltage (HV) (i.e. > 3.3 kV) SiC-based power electronics equipment. In particular, it is desirable to identify applications that can utilize the high switching speed and high control bandwidth enabled by SiC-based equipment. Specifically, the benefits of using SiC are quantified through the benchmark analysis and design using simulation for the selected high-impact applications. In addition, to provide grid support services, it is necessary to consider grid requirements in the grid-connected converter's design. Therefore, the impact of grid requirements on the HV SiC-based grid-connected converter is evaluated.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Line Faults Classification Using Machine Learning on Three Phase Voltages Extracted from Large Dataset of PMU Measurements

An end-to-end supervised learning method is developed to classify transmission line faults in a twoyear field-recorded dataset that includes synchronized measurements of three-phase voltages recorded by 38 Phasor Measurement Units (PMU) sparsely located in in the US Western Grid interconnection. Statistical analysis is performed to extract features from this large dataset to train Support Vector Machine (SVM), Random Forest (RF), and eXtreme Gradient Boosting (XGBoost) classifiers initially. The training further leverages a simulated dataset from a synthetic grid with 12 PMUs to increase the number of faults of types infrequently seen in the field-recorded dataset. Training the classification models with the combined dataset resulted in a classification accuracy of 97.7%. This is a significant improvement over 89.7% to 92.5% accuracy obtained by relying on the field-recorded dataset alone.

47 OTHER INSTRUMENTATION↗
NASA NTRS1979

High power thyristors with 5 kV blocking voltage. Volume 1: Development of high-voltage-thyristors (4.5 kV) with good dynamic properties

Using neutron irradiated silicon with considerably lower spread in resistivity as compared to conventionally doped silicon it was possible to produce power thyristors with breakdown voltages between 3.5 kV and 5.5 kV. The thyristor pellets have a diameter of 50 mm. Maximum average on-state currents of 600 to 800 A can be reached with these elements. The dynamic properties of the thryistors could be improved to allow standard applications up to maximum repetitive voltages of 4.5 kV.

Lock, K.↗
NASA NTRS1991

Particle flows to shape and voltage surface discontinuities in the electron sheath surrounding a high voltage solar array in LEO

This paper discusses the numerical modeling of electron flows from the sheath surrounding high positively biased objects in LEO (Low Earth Orbit) to regions of voltage or shape discontinuity on the biased surfaces. The sheath equations are derived from the Two-fluid, Warm Plasma Model. An equipotential corner and a plane containing strips of alternating voltage bias are treated in two dimensions. A self-consistent field solution of the sheath equations is outlined and is pursued through one cycle. The electron density field is determined by numerical solution of Poisson's equation for the electrostatic potential in the sheath using the NASCAP-LEO relation between electrostatic potential and charge density. Electron flows are calculated numerically from the electron continuity equation. Magnetic field effects are not treated.

Metz, Roger N.↗
DOE OSTI2021

Electric field reversals resulting from voltage waveform tailoring in Ar/O 2 capacitively coupled plasmas sustained in asymmetric systems

The etching of nanometer scale high-aspect-ratio (HAR) features into dielectric materials in low pressure radio frequency excited plasmas is often accompanied by charge accumulation inside the features which can slow etching rates and produce distortions such as twisting. The intra feature charging is at least partially produced by differences in electron and ion energy and angular distributions (EADs). Positive ions, accelerated to high energies having narrow angular spreads by the sheath electric field, can penetrate deeply into HAR features. Electrons typically arrive at the wafer with nearly thermal and isotropic distributions and do not penetrate deeply into HAR features. These disparities lead to differential charging of the inside of the feature, which can lead to reductions in etch rate and feature distortion due to ion deflection. With in-creasing aspect ratio of features, charging challenges are expected to continue for the foreseeable future. In this work, the use of tailored voltage waveforms in geometrically asymmetric capacitively coupled plasmas sustained in Ar/O 2 at 40 mTorr was computationally investigated with the goal of shaping the EAD of electrons incident onto the substrate to address differential charging. The tailored waveform consisted of a sinusoidal wave and its higher harmonics with a fundamental frequency of 1 MHz. Further, we found that electric field reversals in the sheath and presheath can occur during the anodic portion of the cycle. The electric field reversal increases the energy and decreases the angular spread of electrons incident onto the substrate. The magnitude of the electric field reversal can be controlled by the phase angle of the even harmonics and the gas composition. Due to its electronegative nature, increasing mole fractions of O 2 impedes electron transport to the surface which further increases the electric field reversal.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance

The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. Although this error can be minimized by measuring transistors at high gate-source bias |V gs |, this regime is often inaccessible in emerging devices that suffer from high contact resistance or early gate dielectric breakdown. Here, we propose a method of extracting mobility in transistors with gate-dependent contact resistance that does not require operation at high |V gs |, enabling accurate mobility extraction even in emerging transistors with strong contact gating. Our approach relies on updating the transfer length method (TLM) and can achieve <10% error even in regimes where conventional techniques overestimate mobility by >2×

36 MATERIALS SCIENCE↗
NASA NTRS1971

Voltage regulator dissipates minimal power and functions as a voltage divider

Regulator requires minimum amount of power for voltage division and it is not required continuously. The only power loss, except for regulating purposes, is that needed to provide for imbalances in load current requirements. For balanced loads, only leakage current flows through regulating transistors.

Hester, H. B.↗
DOE OSTI2022

Modeling and Feedback Compensator Design for Power-Hardware-in-the-Loop System for Medium-Voltage Grid-Connected Power Converters

Hardware-in-the-loop (HIL) evaluation is a method in which the test subject is split into a physical part and a simulated part, and these parts are connected with interfaces to form a combined physical-numerical system. Power-hardware-in-the-loop (PHIL) systems, where actual hardware is connected to a real-time model, can exhibit issues of instability, inaccuracy and errors when operating in a closed-loop. The challenges of generating a PHIL setup are that, first, because of the limited dynamic response of the different parts of the system, the test results might be inaccurate, and, second, because of the high frequency noise introduced by the sensors to the closed-loop system, it can be difficult to design a compensator for the real-time emulator response, while stabilizing the closed-loop system at the same time. In this paper, different parts of a PHIL system are characterized, and the feedback compensator system design is proposed for the stable operation of the closed-loop PHIL system. The issues as observed in a PHIL system without any compensator are demonstrated using experimental results, and the effectiveness of a first order phase lead compensator is validated.

compensator design↗