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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Discrete component bonding and thick film materials study

The bonding reliability of discrete capacitor chips bonded with solders and conductive epoxies was examined along with the thick film resistor materials consisting of iron oxide phosphate and vanadium oxide phosphates. It was concluded from the bonding reliability studies that none of the wide range of types of solders examined is capable of resisting failure during thermal cycling while the conductive epoxy gives substantially lower failure rates. The thick film resistor studies proved the feasibility of iron oxide phosphate resistor systems although some environmental sensitivity problems remain. One of these resistor compositions has inadvertently proven to be a candidate for thermistor applications because of the excellent control achieved upon the temperature coefficient of resistance. One new and potentially damaging phenomenon observed was the degradation of thick film conductors during the course of thermal cycling.

Kinser, D. L.↗
DOE OSTI2023

Young’s modulus of V 3 O 5 thin films

Vanadium oxide V 3 O 5 exhibits an insulator-to-metal transition (IMT) near 430 K, which is the highest value for all vanadium oxides exhibiting IMTs. This makes it interesting for advanced electronic applications. However, the properties of V 3 O 5 have been little studied, and, in particular, there are no reports of experimentally determined mechanical properties. In this work, Young’s modulus of sputter-deposited V 3 O 5 thin films has been determined by measuring the fundamental resonant frequency of V 3 O 5 -coated silicon microcantilevers using a laser beam deflection technique. After deposition, the films were characterized by x-ray diffraction, resistivity measurements, and atomic force microscopy. The value of Young’s modulus experimentally determined for V 3 O 5 was 198 ± 14 GPa, which is slightly lower than the computationally derived values for bulk crystal V 3 O 5 .

36 MATERIALS SCIENCE↗
DOE OSTI2023

VO 2 phase change electrodes in Li-ion batteries

Use of electrode materials that show phase change behavior and hence drastic changes in electrochemical activity during operation has not been explored for Li-ion batteries. Here we demonstrate the vanadium oxide (VO 2 ) cathode that undergoes a metal–insulator transition due to the first-order structural phase transition at an accessible temperature of 68 °C for battery operation. Using a suitable electrolyte operable across the phase transition range and compatible with vanadium oxide cathodes, we studied the effect of cathode active material structural changes on lithium insertion followed by the electrochemical characteristics above and below the phase transition temperature. The high-temperature VO 2 phase shows significantly improved capacitance, enhanced current rate capabilities, improved electrical conductivity and lithium-ion diffusivity compared to the insulating low temperature phase. In conclusion, this opens up new avenues for electrode design, allowing manipulation of electrochemical reactions around phase transition temperatures, and in particular enhancing electrochemical properties at elevated temperatures contrary to the existing class of battery chemistries that lead to performance deterioration at elevated temperatures.

25 ENERGY STORAGE↗
DOE OSTI2025

Modeling Oxidative Dehydrogenation of Propane with Supported Vanadia Catalysts Using Multireference Methods

The oxidative dehydrogenation of propane over supported vanadium oxide catalysts poses significant computational challenges due to complex electronic structure changes along the reaction coordinate, driven primarily by changes in the oxidation states of vanadium. To address these challenges, we systematically test quantum chemical methods, including multireference (MR) approaches, domain-based local pair natural orbital coupled cluster theory (DLPNO-CCSD(T)), and density functional theory (DFT). The initial C–H bond-breaking transition state requires MR treatment due to its multireference character, while subsequent steps permit efficient single-reference calculations. For the rate-limiting C–H activation step mediated by the vanadyl moiety, complete 1 active space second-order perturbation theory (CASPT2) yields an apparent activation barrier (E app 600K ) of 138 kJ/mol, consistent with experimental values (134 ± 4 kJ/mol; Gruene et al. Catal. Today 2010, 157, 137). In contrast, DLPNO-CCSD(T) overestimates this barrier (198 kJ/mol), whereas DFT predictions span 125–150 kJ/mol, depending on the functional. Our multireference investigation of this transition metal oxide-catalyzed process demonstrates that an active space that incorporates the C–H σ and V=O σ/π bonding orbitals, oxygen lone pairs, and their antibonding counterparts adequately captures electronic structure changes along the chemical transformation. Furthermore, these findings provide a general strategy for active space selection in transition metal oxide-catalyzed C/O–H bond activation reactions. The reference dataset from this work, which includes MR calculations with manually selected active spaces for all intermediates and transition states in the propane ODH reaction network, will serve as a benchmark for automating active space selection in similar systems.

Catalysts↗
DOE OSTI2022

Physical and Flow Properties of Glass Forming Chemicals (V2O5, SnO, SnO2, Cr2O3, FeCr2O4, and ZrSiO4) and Mixtures

For a sustainable nuclear waste vitrification process at the Hanford Tank Waste Treatment and Immobilization Plant (WTP), proper selection and consistent supply of glass-forming chemicals (GFCs) are crucial. Establishing rigorous acceptance criteria for the characterization of GFCs will be required to operate the vitrification facility and to mitigate any processing issues or failures. Low-activity wastes (LAW) are blended with GFCs to form slurry melter feeds and vitrified in a melter. To enhance properties of waste glasses, new chemicals are being introduced to the current GFC mixture (Vienna et al. 2016; Muller et al. 2017, 2019). In this study, three new GFCs were evaluated for enhanced LAW glass formulations: chromium oxide (Cr 2 O 3 ), vanadium oxide (V 2 O 5 ), and stannic oxide (SnO 2 ). These three oxide components are included in enhanced waste glass (EWG) formulations and GFCs with the appropriate physical and flow properties are needed. As a starting point, single metal oxide GFCs: Cr 2 O 3 , V 2 O 5 , and SnO 2 were sourced and tested. To characterize these new individual GFCs and mixtures of GFCs, the industrial bulk characterization consultant, Jenike and Johanson, was employed to measure physical and flow properties of individual GFCs and their mixtures. Pacific Northwest National Laboratory (PNNL) also measured several selected physical properties for data evaluation as a quality assurance step. In addition, PNNL measured physical and rheological properties of slurry melter feeds containing those GFCs. Subsequent data analyses and verification were conducted. The purpose of this report is to assess the applicability of these GFCs for LAW vitrification based on their properties. This report will help understand measured data and evaluate new GFCs for use. Moreover, this report may give useful insights to help troubleshoot any GFC and melter feed transport and mixing issues that arise during processing, leading to a successful cleanup mission at WTP.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2023

Physical and Flow Properties of Glass-Forming Chemicals (V 2 O 5 , SnO, SnO 2 , Cr 2 O 3 , FeCr 2 O 4 , and ZrSiO 4 ) and Mixtures

For an efficient nuclear waste vitrification process at the Waste Treatment and Immobilization Plant (WTP) on the Hanford Site, proper selection and consistent supply of glass-forming chemicals (GFCs) are crucial. Thorough characterization of the GFCs is required to reduce risks in operation of the vitrification facility. Low-activity waste (LAW) will be blended with GFCs to form slurry feeds and then fed to melters and vitrified. To enhance properties of waste glasses, new chemicals are being introduced to the current GFC mixture. In this study, three new GFCs were evaluated for enhanced LAW glass formulations: chromium oxide (Cr 2 O 3 ), vanadium oxide (V 2 O 5 ), and stannic oxide (SnO 2 ). These three oxide components are included in enhanced waste glass formulations, and GFCs with the appropriate physical and flow properties are needed. As a starting point, single metal oxide GFCs, Cr 2 O 3 , V 2 O 5 , and SnO 2 , were sourced and tested. Then, alternative sources of Sn and Cr (SnO and FeCr 2 O 4 ) were tested along with an alternative zircon source (ZrSiO 4 ). This report documents the work performed to collect physical and flow property data on these new GFCs and melter feed slurries generated using these GFCs and simulated low-activity wastes.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
NASA NTRS1989

Effects of microstructure and nonstoichiometry on electrical properties of vanadium dioxide films

Voided growth structures of sputter-deposited films affect strongly their optical and electrical properties. Vanadium dioxide is an interesting material to study effects of film microstructure and nonstoichiometry on electrical properties because its phase transition makes it possible to investigate electrical behavior both in a semiconducting phase and in a metallic phase. Vanadium oxide films were deposited with different vanadium oxygen ratios for substrate temperatures between 250 and 550 C by dc reactive magnetron sputtering. The resistivity ratios between a semiconducting phase and a metallic phase are limited to 1000 order by voided boundaries and oxygen vacancies. The voided boundaries are defined by columnar structure and agglomerated grain growth. The results emphasize the necessity of a combination of deposition to obtain the film with a favorable structure and postdeposition annealing to control the film stoichiometry.

Kusano, Eiji↗
NASA NTRS2004

Micro-XANES Measurements on Experimental Spinels and the Oxidation State of Vanadium in Spinel-Melt Pairs

Spinel can be a significant host phase for V as well as other transition metals such as Ni and Co. However, vanadium has multiple oxidation states V(2+), V(3+), V(4+) or V(5+) at oxygen fugacities relevant to natural systems. We do know that D(V) spinel/melt is correlated with V and TiO2 content and fO2, but the uncertainty of the oxidation state under the range of natural conditions has made elusive a thorough understanding of D(V) spinel/melt. For example, V(3+) is likely to be stable in spinels, based on exchange with Al in experiments in the CaO-MgO-Al2O3-SiO2 system. On the other hand, it has been argued that V(4+) will be stable across the range of natural oxygen fugacities in nature. In order to gain a better understanding of D(V) spinel/melt we have equilibrated spinel-melt pairs at controlled oxygen fugacities, between HM to NNO, where V is present in the spinel at natural levels (approx. 300 ppm V). These spinel-melt pairs were analyzed using micro-XANES at the Advanced Photon Source at Argonne National Laboratory. The new results will be used together with spinel compositional data (Ti, V content) and oxygen fugacity, to unravel the effects of these variables on D(V) spinel/melt.

Righter, K.↗
DOE OSTI2023

Synthesis, structural and electrochemical properties of V4O9 cathode for lithium batteries

Single-phase three-dimensional vanadium oxide (V 4 O 9 ) was synthesized by reduction of V 2 O 5 using a gas stream of ammonia/argon (NH 3 /Ar). The as-synthesized oxide, prepared by this simple gas reduction method was subsequently electrochemically transformed into a disordered rock salt type-“Li3.7V4O9” phase while cycling over the voltage window 3.5 to 1.8 V versus Li. The Li-deficient phase delivers an initial reversible capacity of ∼260 mAhg −1 at an average voltage of 2.5 V vs. Li + /Li 0 . Further cycling to 50 cycles yields a steady 225 mAhg −1 . Ex situ X-ray diffraction studies confirmed that (de) intercalation phenomena follows a solid-solution electrochemical reaction mechanism. As demonstrated, the reversibility and capacity utilization of this V 4 O 9 is found to be superior to battery grade, micron-sized V 2 O 5 cathodes in lithium cells.

25 ENERGY STORAGE↗
DOE OSTI2024

Photoinduced Melting of V 4 O 7 Correlated State

The compound V 4 O 7 is one of the Magnéli phase (V n O 2n - 1 , n = 3, 4, …, 9) correlated vanadium oxides with distinct intriguing electronic and structural properties. The possibility to manipulate the phase state of V 4 O 7 on an ultrafast time scale by light makes this material promising for potential applications in photonics, optoelectronics, quantum, and neuromorphic circuit design. In this work, the ultrafast spectroscopy of V 4 O 7 reveals the second-order nature of the photoinduced insulator-to-metal transition, emphasizing electronic and lattice contributions. The findings reveal the influence of the laser excitation level and temperature on these dynamics, providing a comprehensive understanding of V 4 O 7 structural changes and response to external stimuli. The phenomenological model based on the Landau–Ginzburg formalism provides a robust framework for explaining the photoinduced transition dynamics, showing a detailed picture of the light interaction with the electronic and lattice subsystems. This integrated approach significantly enhances the understanding of V 4 O 7 complex behavior upon photoexcitation, opening new possibilities for developing new optoelectronic devices and noninvasive optical control of the phase transition pathways in vanadates.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Elucidation of Design Criteria for V‐based Redox Mediators: Structure‐Function Relationships that Dictate Rates of Heterogeneous Electron Transfer

Redox mediators are attractive solutions for addressing the stringent kinetic stipulations required for efficient energy conversion processes. In this work, we compare the electrochemical properties of four vanadium complexes, namely [V(acac) 3 ], [V 6 O 7 (OMe) 12 ], [ n Bu 4 N] 3 [V 6 O 13 (TRIS NO2 ) 2 ], and [ n Bu 4 N] 5 [V 18 O 46 (NO 3 )] in non-aqueous solutions on glassy carbon electrodes. The goal of this study is to investigate the electron transfer kinetics and diffusivity of these compounds under identical experimental conditions to develop an understanding of structure-function relationships that dictate the physicochemical properties of vanadium oxide assemblies. Complex selection was dictated by two criteria – (1) nuclearity of the transition metal complexes (2) distribution of electron density in the native electronic configuration. In conclusion, our analyses establish that electronic communication between metal centers significantly impacts charge transfer kinetics of these vanadium-based compounds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Rare Earth and Transition Metal Containing Glasses

Transition metal (TM) and rare earth (RE) ions have been incorporated into many glass systems such as silicate, phosphate, and borosilicate-based oxide glasses, as well as in halide and chalcogenide glasses, that find applications ranging from optical, photonic, and magnetic devices, solid-state battery, to nuclear waste disposal. Understanding the structural role of RE and TM in these glasses can help to develop glass compositions for targeted applications with either high-optical emission efficiency, electrical conductivity, or chemical durability. In this chapter, we first provide a general introduction of the applications and structural features of RE and TM in glasses, then the critical aspects of molecular dynamics (MD) simulations of these glasses such as interatomic potentials, structural analysis tools to study RE and TM ions in glasses and their clustering behaviors, Quantitative Structure–Property Analysis (QSPR), diffusion and dynamic property calculations, and electronic structure calculations to understand electronic defects such as charge trapping and radiation effects are introduced. Three representative case studies are presented: the first one is on MD simulations of erbium- and europium-doped silica and silicate glasses, as well as cerium doped aluminophosphate glasses, that revealed the effect of glass composition on RE ion local structure and clustering behavior. Electronic structure calculations of cerium-doped glass show how the existence of multioxidation states help to mediate radiation-induced damages caused by excited electron–hole pairs was also discussed. The second one focuses on alkali vanadophosphate glasses where the existence of two vanadium oxidation states help to provide electronic conduction in the glasses while alkali ions provide ionic conduction. MD simulations were used to understand vanadium environments and other structural aspects in the phosphate glasses, as well as the ionic transport behaviors of alkali ions. The third case study is on zirconium-containing borosilicate and aluminosilicate glasses that find wide applications in nuclear waste disposal. MD simulations help to provide structural details of zirconium ions that are validated by diffraction and EXAFS spectra. The structural information was used to interpret changes of mechanical properties and chemical durability by using QSPR and other analyses-based MD-generated structure models.

Du, Jincheng↗
DOE OSTI2026

Multifunctional electrochemical memory stabilized by phase coexistence

Our growing computing needs, especially in applications that heavily rely on artificial intelligence (AI), motivate a search for new components that could substantially augment the performance of general-purpose digital computers. Beyond ON/OFF switching, new components with linear multistate analog resistive tuning, nonlinear volatile switching, spiking, oscillatory, stochastic and other complex functionalities could enable highly efficient neuromorphic computing schemes for AI information processing. Compared to the extreme multifunctionality of biological neurons, realizing all the above characteristics in a single, scalable analog component remains a grand challenge. Here we investigate electrochemical gating combined with localized thermal activation to program and switch a single, vertically integrated and dimensionally scaled electrothermal chemical random access memory (ETCRAM) with a channel and reservoir composed of phase-separated vanadium oxide. Closely related to electrochemical RAM (ECRAM), ETCRAM uses an integrated gate-heater electrode to overcome kinetic barriers that help retain states at ambient temperatures. In addition to synapse-like stable and programmable analog resistance states arising from redox-tunable phase coexistence, a single component exhibits neuron-like nonlinear conductance switching with a tunable threshold and self-driven dynamics owing to the thermally driven metal-insulator phase transition in vanadium dioxide. More broadly, we demonstrate that electrochemically stabilized phase coexistence could unlock analog electronics with novel functionality, stability, reconfigurability, and scalability.

Oh, Sangheon [Sandia National Lab. (SNL-CA), Liver↗
DOE OSTI2024

Electrically-driven IMT and volatile memristor behavior in NdNiO 3 films

Abstract Transition metal oxides with insulator-metal transitions (IMTs) are uniquely suited for volatile memristor devices that mimic the spiking of biological neurons. Unlike most non-volatile memristors, which often operate via ion migration into filaments, volatile devices utilize a reversible phase change that returns to a ground state in the absence of applied stimulus. In these devices, Joule heating triggers the IMT and changes the bulk resistivity rather than influencing conduction through defects, as in previous studies. This volatile resistive switching behavior has previous been leveraged in niobium and vanadium oxides, but not in rare-earth nickelates, despite their tunable transition temperatures. This study demonstrates an electrically driven IMT in the prototypical rare-earth nickelate, NdNiO 3 , in large area devices. While previous work examining the electrically-driven IMT in NdNiO 3 suggests defect-dominated conduction, this study shows clear s-type negative differential resistance (NDR) consistent with temperature-dependent resistivity measurements. The NDR peak-to-valley voltage scales linearly with temperature as expected for conductivity pathways dominated by bulk IMT behavior. Unlike other transition metal oxides, which are modeled using the insulator-metal phase fraction as the internal state variable, a thermoelectric model with temperature as the internal state variable is found to more accurately describe the current–voltage characteristic of NdNiO 3 volatile memristors. Overall, we report the synthesis, fabrication, and characterization of NdNiO 3 volatile memristors with resistivity dominated by bulk-like IMT behavior which is scalable and not dependent upon oxygen vacancy migration or defect mediated conduction pathways.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Ultrathin VO 2 Films on Functional Substrates

The metal–insulator transition (MIT) in vanadium dioxide (VO 2 ) thin films is strongly affected by grain size, thickness, and interfacial properties. Typically, a minimum thickness around 50 nm is required for VO 2 to exhibit a significant MIT when functional substrates like sapphire and silicon are used. Several works have shown that thin films below 20 nm, with up to 2–3 decades of change in the resistance across the MIT, can be achieved but require complex pre- or postprocessing of the samples. We show that predeposition substrate condition control facilitates the direct growth of VO 2 ultrathin 15 nm films, exhibiting a resistance change between 3 and 4 decades across the MIT. Our findings indicate that the interface between the film and the substrate is crucial in determining the initial growth layers and the structural evolution. With appropriate substrate surface treatment, the desired VO 2 MIT can be enhanced regardless of the substrate crystallographic orientation. Moreover, we propose a novel approach to obtain large resistance changes across the MIT in ultrathin VO 2 films by incorporating a predeposited 1.5 nm vanadium oxide buffer layer, thereby eliminating the need to use different materials or complex pre- or postprocessing of the samples. Here we also demonstrate that this method improves the transition of 25–50 nm VO 2 thin films on silicon substrates. Our study reveals a simple approach for direct growth of ultrathin VO 2 films exhibiting a significant MIT, which is commonly accepted unattainable over substrates of technological importance, such as sapphire and silicon.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗