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Spin-polarized imaging of the antiferromagnetic structure and field-tunable bound states in kagome magnet FeSn
Abstract Kagome metals are an exciting playground for the explorations of novel phenomena at the intersection of topology, electron correlations and magnetism. The family of FeSn-based kagome magnets in particular attracted a lot of attention for simplicity of the layered crystal structure and tunable topological electronic band structure. Despite a significant progress in understanding their bulk properties, surface electronic and magnetic structures are yet to be fully explored in many of these systems. In this work, we focus on a prototypical kagome metal FeSn. Using a combination of spin-averaged and spin-polarized scanning tunneling microscopy, we provide the first atomic-scale visualization of the layered antiferromagnetic structure at the surface of FeSn. In contrast to the field-tunable electronic structure of cousin material Fe 3 Sn 2 that is a ferromagnet, we find that electronic density-of-states of FeSn is robust to the application of external magnetic field. Interestingly, despite the field insensitive electronic band structure, FeSn exhibits bound states tied to specific impurities with large effective moments that strongly couple to the magnetic field. Our experiments provide microscopic insights necessary for theoretical modeling of FeSn and serve as a spring board for spin-polarized measurements of topological magnets in general.
Optical N-plasmon: topological hydrodynamic excitations in graphene from repulsive Hall viscosity
Abstract Edge states occurring in Chern and quantum spin-Hall phases are signatures of the topological electronic band structure in two-dimensional (2D) materials. Recently, a new topological electromagnetic phase of graphene characterized by the optical N-invariant was proposed. Optical N-invariant arises from repulsive Hall viscosity in hydrodynamic many-body electron systems, distinct from the Chern and Z 2 invariants. In this paper, we introduce the topologically protected edge excitation—optical N-plasmon of interacting many-body electron systems in the topological optical N-phase. These optical N-plasmons are signatures of the topological plasmonic band structure in 2D materials. We demonstrate that optical N-plasmons exhibit unique dispersion relations, stability against various boundary conditions, and edge profiles when compared with the topologically trivial edge magneto plasmons. Based on the optical N-plasmon, we design an ultra sub-wavelength broadband topological hydrodynamic circulator, which is a chiral quantum radio-frequency circuit component crucial for information routing and interfacing quantum–classical computing systems. Furthermore, we reveal that optical N-plasmons can be effectively tuned by the neighboring dielectric environment without breaking the topological properties. Our work provides a smoking gun signature of topological electromagnetic phases occurring in 2D materials arising from repulsive Hall viscosity.
Magnetotransport and electronic structure of the antiferromagnetic semimetal YbAs
A number of rare-earth monopnictides have topologically nontrivial band structures together with magnetism and strong electronic correlations. In order to examine whether the antiferromagnetic (AFM) semimetal YbAs (TN=0.5 K) exhibits such a scenario, we have grown high-quality single crystals using a flux method, and characterized the magnetic properties and electronic structure using specific heat, magnetotransport, and angle-resolved photoemission spectroscopy (ARPES) measurements, together with density functional theory (DFT) calculations. Both ARPES and DFT calculations find no evidence for band inversions in YbAs, indicating a topologically trivial electronic structure. From low-temperature magnetotransport measurements, we map the field-temperature phase diagram, where we find the presence of a field stabilized phase distinct from the AFM phase at low temperatures. Additionally, an extremely large magnetoresistance (XMR) for both YbAs and the nonmagnetic counterpart LuAs is also observed, which can consistently be accounted for by the presence of electron-hole compensation. Moreover, an angle-dependent study of the Shubnikov-de Haas effect oscillations reveals very similar Fermi surfaces between YbAs and LuAs, with light effective masses down to at least 0.5 K, indicating that the Yb-4f electrons are well localized, and do not contribute to the Fermi surface. However, the influence of the localized Yb-4f electrons on the magnetotransport of YbAs can be discerned from the distinct temperature dependence of the XMR compared to that of LuAs, which we attribute to the influence of short-ranged spin correlations that appear well above TN.
Bulk and surface electronic structure of NiBi 3
Here, we present a high-resolution, angle-resolved photoemission spectroscopy study of the normal electronic state of the superconducting NiBi 3 . Our experimental results show a complex Fermi surface structure with many sheets along the Γ–$\textit{X}$ and Γ–$\textit{Y}$ directions of the Brillouin zone. The band structure presents a topological surface state (TSS) at the high symmetry Γ point with a surface Dirac point at the energy –0.185 eV. The Dirac-like cone presents a linear dispersion along $k_x$ while it presents saddle-like states along $k_y$ located in the vicinity of the surface Dirac point. Our results are in good agreement with results of density functional theory band structure calculations. We also discuss the topological band structure of the NiBi 3 compound.
Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films
Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd 3 + ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport properties of RE-Vs. Here, we present a surface and structural characterization study mapping the optimal synthesis window of thin epitaxial GdSb films grown on III-V lattice-matched buffer layers via molecular-beam epitaxy. To determine the factors limiting XMR in RE-V thin films and provide a benchmark for band-structure predictions of topological phases of RE-Vs, the electronic band structure of GdSb thin films is studied, comparing carrier densities extracted from magnetotransport, angle-resolved photoemission spectroscopy (ARPES), and density-functional theory (DFT) calculations. ARPES shows a hole-carrier rich, topologically trivial, semimetallic band structure close to complete electron-hole compensation, with quantum confinement effects in the thin films observed through the presence of quantum-well states. DFT-predicted Fermi wave vectors are in excellent agreement with values obtained from quantum oscillations observed in magnetic field-dependent resistivity measurements. An electron-rich Hall coefficient is measured despite the higher hole-carrier density, attributed to the higher electron Hall mobility. The carrier mobilities are limited by surface and interface scattering, resulting in lower magnetoresistance than that measured for bulk crystals.
Band inversion-driven warping and high valley degeneracy
Band inversion is a physical phenomenon that can warp the band structure in topological insulators, generating multiple electronic valleys for conducting carriers. However, the conditions under which band inversion induces warping are not well understood. Here, we derive two general rules that must be satisfied for band warping to occur in centrosymmetric and non-magnetic topological insulators: (1) bands must be sufficiently inverted, and (2) secondary bands must have opposite parity and be close in energy to the band edges. We chart the valley degeneracies that can emerge from band inversion in each of the 11 centrosymmetric point groups, revealing that an increase in the valley degeneracy between 2- and 48-fold is possible from band inversion. The generalized rules offer a unique band engineering approach by capitalizing on the non-trivial electronic structures of topological insulators.
Quantum-limit phenomena and band structure in the magnetic topological semimetal EuZn 2 As 2
The interplay between magnetism and electronic topology in the quantum limit is a forefront subject of condensed matter physics. Here, we show the electronic and magnetic properties of layered antiferromagnet EuZn 2 As 2 in pulsed magnetic fields up to 60 T and temperatures down to 0.6 K. By analyzing the quantum oscillations observed in the magnetoresistance (MR) and proximity detector oscillator (PDO) frequency, we find that (1) the oscillation frequency F = 46 ± 6 T for H // c and 42 ± 2 T for H // ab; (2) the corresponding Berry phase is close to π for H // c, implying a nontrivial topology; and (3) the large linear MR occurs beyond the first Landau level, without any sign of saturation. From these observations, we conclude that the linear MR can be understood by considering diffusing cyclotron centers due to compressed Landau wavefunction, an emergent behavior in the quantum limit.
Reentrant Correlated Insulators in Twisted Bilayer Graphene at 25 T ( 2 π Flux)
Twisted bilayer graphene (TBG) is remarkable for its topological flat bands, which drive strongly interacting physics at integer fillings, and its simple theoretical description facilitated by the Bistritzer-MacDonald Hamiltonian, a continuum model coupling two Dirac fermions. Because of the large moiré unit cell, TBG offers the unprecedented opportunity to observe reentrant Hofstadter phases in laboratory-strength magnetic fields near 25 T. This Letter is devoted to magic angle TBG at 2π flux where the magnetic translation group commutes. Here we use a newly developed gauge-invariant formalism to determine the exact single-particle band structure and topology. We find that the characteristic TBG flat bands reemerge at 2π flux, but, due to the magnetic field breaking C 2z T, they split and acquire Chern number ±1. We show that reentrant correlated insulating states appear at 2π flux driven by the Coulomb interaction at integer fillings, and we predict the characteristic Landau fans from their excitation spectrum.
Quantum anomalous Hall effect in two-dimensional magnetic insulator heterojunctions
Abstract Recent years have witnessed tremendous success in the discovery of topological states of matter. Particularly, sophisticated theoretical methods in time-reversal-invariant topological phases have been developed, leading to the comprehensive search of crystal database and the prediction of thousands of topological materials. In contrast, the discovery of magnetic topological phases that break time reversal is still limited to several exemplary materials because the coexistence of magnetism and topological electronic band structure is rare in a single compound. To overcome this challenge, we propose an alternative approach to realize the quantum anomalous Hall (QAH) effect, a typical example of magnetic topological phase, via engineering two-dimensional (2D) magnetic van der Waals heterojunctions. Instead of a single magnetic topological material, we search for the combinations of two 2D (typically trivial) magnetic insulator compounds with specific band alignment so that they can together form a type-III broken-gap heterojunction with topologically non-trivial band structure. By combining the data-driven materials search, first-principles calculations, and the symmetry-based analytical models, we identify eight type-III broken-gap heterojunctions consisting of 2D ferromagnetic insulators in the MXY compound family as a set of candidates for the QAH effect. In particular, we directly calculate the topological invariant (Chern number) and chiral edge states in the MnNF/MnNCl heterojunction with ferromagnetic stacking. This work illustrates how data-driven material science can be combined with symmetry-based physical principles to guide the search for heterojunction-based quantum materials hosting the QAH effect and other exotic quantum states in general.
Atomic layer molecular beam epitaxy of kagome magnet RMn6Sn6 (R = Er, Tb) thin films
Kagome lattices have garnered substantial interest because their band structure consists of topological flat bands and Dirac cones. The RMn6Sn6 (R = rare earth) compounds are particularly interesting because of the existence of the large intrinsic anomalous Hall effect (AHE), which originates from the gapped Dirac cones near the Fermi level. This makes RMn6Sn6 an outstanding candidate for realizing the high-temperature quantum AHE. The growth of RMn6Sn6 thin films is beneficial for both fundamental research and potential applications. However, most of the studies on RMn6Sn6 have focused on bulk crystals, and the synthesis of RMn6Sn6 thin films has not been reported so far. Here, we report the atomic layer molecular beam epitaxy growth, structural and magnetic characterizations, and transport properties of ErMn6Sn6 and TbMn6Sn6 thin films. It is especially noteworthy that TbMn6Sn6 thin films have out-of-plane magnetic anisotropy, which is important for realizing the quantum AHE. Our work paves the avenue toward the control of the AHE using devices patterned from RMn6Sn6 thin films.
Dirac lines and loop at the Fermi level in the time-reversal symmetry breaking superconductor LaNiGa 2
Unconventional superconductors have Cooper pairs with lower symmetries than in conventional superconductors. In most unconventional superconductors, the additional symmetry breaking occurs in relation to typical ingredients such as strongly correlated Fermi liquid phases, magnetic fluctuations, or strong spin-orbit coupling in noncentrosymmetric structures. In this article, we show that the time-reversal symmetry breaking in the superconductor LaNiGa 2 is enabled by its previously unknown topological electronic band structure, with Dirac lines and a Dirac loop at the Fermi level. Two symmetry related Dirac points even remain degenerate under spin-orbit coupling. These unique topological features enable an unconventional superconducting gap in which time-reversal symmetry can be broken in the absence of other typical ingredients. Our findings provide a route to identify a new type of unconventional superconductors based on nonsymmorphic symmetries and will enable future discoveries of topological crystalline superconductors.
From Trivial Kondo Insulator Ce 3 Pt 3 Bi 4 to Topological Nodal-Line Semimetal Ce 3 Pd 3 Bi 4
In this work, using the density functional theory combined with dynamical mean-field theory, we have performed systematic study of the electronic structure and its band topology properties of Ce 3 Pt 3 Bi 4 and Ce 3 Pd 3 Bi 4 . At high temperatures ( ~ 290 K ), the electronic structures of both compounds resemble the open-core 4 f density functional calculation results. For Ce 3 Pt 3 Bi 4 , clear hybridization gap can be observed below 72 K, and its coherent momentum-resolved spectral function below 18 K exhibits an topologically trivial indirect gap of ~ 6 meV and resembles density functional band structure with itinerant 4 f state. For Ce 3 Pd 3 Bi 4 , no clear hybridization gap can be observed down to 4 K, and its momentum-resolved spectral function resembles electron-doped open-core 4 f density functional calculations. The band nodal points of Ce 3 Pd 3 Bi 4 at 4 K are protected by the gliding-mirror symmetry and form ringlike structure. Therefore, the Ce 3 Pt 3 Bi 4 compound is topologically trivial Kondo insulator while the Ce 3 Pd 3 Bi 4 compound is topological nodal-line semimetal.
Topological Green’s Function Zeros in an Exactly Solved Model and Beyond
The interplay of topological electronic band structures and strong interparticle interactions provides a promising path towards the constructive design of robust, long-range entangled many-body systems. As a prototype for such systems, we here study an exactly integrable, local model for a fractionalized topological insulator. Using a controlled perturbation theory about this limit, we demonstrate the existence of topological bands of zeros in the exact fermionic Green’s function and show that in this model they do affect the topological invariant of the system, but not the quantized transport response. Close to (but prior to) the Higgs transition signaling the breakdown of fractionalization, the topological bands of zeros acquire a finite “lifetime.” We also discuss the appearance of edge states and edge zeros at real space domain walls separating different phases of the system. This model provides a fertile ground for controlled studies of the phenomenology of Green’s function zeros and the underlying exactly solvable lattice gauge theory illustrates the synergetic cross pollination between solid-state theory, high-energy physics, and quantum information science.
Yu-Shiba-Rusinov States in a Superconductor with Topological Z 2 Bands
A Yu-Shiba-Rusinov (YSR) state is a localized in-gap state induced by a magnetic impurity in a superconductor. Recent experiments used an STM tip to manipulate the exchange coupling between an Fe adatom and the FeTe 0.55 Se 0.45 superconductor possessing a Z 2 nontrivial band structure with topological surface states. As the tip moves close to the single Fe adatom, the energy of the in-gap state modulates and exhibits a zero-energy crossing followed by an unusual return to zero energy, which cannot be understood by coupling the magnetic impurity to the superconducting topological surface Dirac cone. Here, we numerically and analytically study the YSR states in superconductors with nontrivial Z 2 bands and show the emergence of the two zero-energy crossings as a function of the exchange coupling between the magnetic impurity and the bulk states. We analyze the role of the topological surface states and compare in-gap states to systems with trivial Z 2 bands. The spin polarization of the YSR states is further studied for future experimental measurement.
Fermi-Level Engineering of Nitrogen Core-Doped Armchair Graphene Nanoribbons
Substitutional heteroatom doping of bottom-up engineered 1D graphene nanoribbons (GNRs) is a versatile tool for realizing low-dimensional functional materials for nanoelectronics and sensing. Previous efforts have largely relied on replacing C–H groups lining the edges of GNRs with trigonal planar N atoms. This type of atomically precise doping, however, only results in a modest realignment of the valence band (VB) and conduction band (CB) energies. Here, we report the design, bottom-up synthesis, and spectroscopic characterization of nitrogen core-doped 5-atom-wide armchair GNRs (N2-5-AGNRs) that yield much greater energy-level shifting of the GNR electronic structure. Here, the substitution of C atoms with N atoms along the backbone of the GNR introduces a single surplus π-electron per dopant that populates the electronic states associated with previously unoccupied bands. First-principles DFT-LDA calculations confirm that a sizable shift in Fermi energy (∼1.0 eV) is accompanied by a broad reconfiguration of the band structure, including the opening of a new band gap and the transition from a direct to an indirect semiconducting band gap. Scanning tunneling spectroscopy (STS) lift-off charge transport experiments corroborate the theoretical results and reveal the relationship among substitutional heteroatom doping, Fermi-level shifting, electronic band structure, and topological engineering for this new N-doped GNR.
Nodal fermions in the strongly spin-orbit coupled pyrochlore-lattice compound RbBi2
We explore the topological electronic band structure of the pyrochlore lattice in the strong spin-orbit coupling regime. Using angle-resolved photoemission spectroscopy, first-principles calculations, and symmetry analysis, we have investigated the bulk electronic structure of RbBi2, which has a Bi pyrochlore network. We observe the presence of 3D massless Dirac fermions enforced by nonsymmorphic symmetry, as well as a 3D quadratic band crossing protected by cubic crystalline symmetry. Furthermore, we identify an additional 3D linear Dirac dispersion associated with band inversion protected by threefold rotation symmetry. These observations reveal the rich band topology of itinerant pyrochlore lattice systems in the strong SOC limit and serve as a starting point to explore correlated topological phases in geometrically frustrated lattices.