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NASA NTRS1978

High temperature resistant cermet and ceramic compositions

High temperature oxidation resistance, high hardness and high abrasion and wear resistance are properties of cermet compositions particularly to provide high temperature resistant refractory coatings on metal substrates, for use as electrical insulation seals for thermionic converters. The compositions comprise a sintered body of particles of a high temperature resistant metal or metal alloy, preferably molybdenum or tungsten particles, dispersed in and bonded to a solid solution formed of aluminum oxide and silicon nitride, and particularly a ternary solid solution formed of a mixture of aluminum oxide, silicon nitride and aluminum nitride. Ceramic compositions comprising a sintered solid solution of aluminum oxide, silicon nitride and aluminum nitride are also described.

Phillips, W. M.↗

NASA NTRS1978

High temperature resistant cermet and ceramic compositions

Cermet compositions having high temperature oxidation resistance, high hardness and high abrasion and wear resistance, and particularly adapted for production of high temperature resistant cermet insulator bodies are presented. The compositions are comprised of a sintered body of particles of a high temperature resistant metal or metal alloy, preferably molybdenum or tungsten particles, dispersed in and bonded to a solid solution formed of aluminum oxide and silicon nitride, and particularly a ternary solid solution formed of a mixture of aluminum oxide, silicon nitride and aluminum nitride. Also disclosed are novel ceramic compositions comprising a sintered solid solution of aluminum oxide, silicon nitride and aluminum nitride.

Phillips, W. M.↗

DOE OSTI2022

Modeling the non-Schmid crystallographic slip in MAX phases

We present a crystal plasticity constitutive relation for the description of experimentally observed non-Schmid crystallographic slip in a class of ternary carbides and nitrides commonly referred to as MAX phases. In the constitutive relation, we assume that the evolution of the slip system strength in MAX phases has two components – a classical component that depends on the Taylor cumulative shear strain and a non-Schmid component that depends on the stress normal to the slip plane. The non-Schmid crystal plasticity constitutive relation is then used to carry out finite element simulations of micropillar compression of single crystals of two MAX phases, Ti 2 AlC and Ti 3 AlC 2 . The finite element simulations not only quantitatively predict the stress – strain response of a wide range of crystallographic orientations of the micropillars but also rationalize the non-uniform deformation and the deformed shape of the micropillars observed in the experiments for the two materials. As a result, parametric studies are also carried out to quantify the role of the non-Schmid effect and understand the effects of key experimental parameters on the stress – strain response of the micropillars of the two MAX phases.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Robust Solar Receivers Using MAX Phase Materials

This work was supported by the U.S. Department of Energy’s Office of Energy Efficiency and Renewable Energy under the Solar Energy Technologies Office Award Number 35928. The objective of the proposed effort was to develop and optimize additive manufacturing technologies for low-cost fabrication of high-temperature receivers using MAX phase-based materials (Ti 3 SiC 2 and Ti 3 AlC 2 ). MAX phase materials are a group of ternary metal carbides and nitrides where M stands for an early transition metal element, A is a group 13–16 element, and X is C and/or N. In Phase 1, the binder jetting additive manufacturing process was used to synthesize and characterize the Ti 3 SiC 2 MAX phase material. The typical process involved first producing a TiC preform using binder jetting followed by infiltration of the preform with silicon melt to form Ti 3 SiC 2 in situ. The reaction-infiltrated samples showed formation of MAX phase in the sample core; however, the surface showed cracking. Various process conditions—cooling rates, hold times, Si proportion, etc.—were varied to minimize the surface cracking. The fabricated MAX phase core was characterized by microstructure analysis and evaluations of mechanical properties such as hardness and thermal shock. In Phase 2, the focus included fabrication of Ti 3 SiC 2 MAX phase materials by spark plasma sintering (SPS) and synthesis of Ti 3 AlC 2 MAX phase materials by the Al melt infiltration process. It is expected that Al infiltration will not cause sample cracking, since Al does not expand during solidification. In addition, other processing approaches were investigated to fabricate the MAX phase materials, such as SPS with a graphite bedding approach for producing short-length Ti 3 AlC 2 MAX phase tubes for demonstration of prototypical Concentrating Solar Power receiver tubes. Fabricated samples underwent thermo-mechanical testing to validate the materials for the solar receiver application at temperatures >1000°C. In Phase 3, the effort focused on the development and optimization of the Ti-Al-C MAX phase composite material using the Al melt infiltration approach. We started with optimization of precursor powders and making preform structures by either pressing them in a die or using the binder jetting additive manufacturing process followed by Al melt infiltration. In addition, we investigated the formation of preform structures by cold isostatic pressing followed by Al melt infiltration for making Ti-Al-C MAX phase composite. Thermo-mechanical characterizations, such as creep, strength, and thermal shock, were conducted to establish the structures’ performance.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Investigating the effects of local environment on nitrogen vacancies in high-entropy metal nitrides

High-entropy metal nitrides are an important material class in a variety of applications, and the role of nitrogen vacancies is of great importance for understanding their stability and mechanical properties. Here, we study six different high-entropy nitrides with eight different metal species to build a predictive model of the nitrogen-vacancy formation energy. We construct sets of supercells that maximize the number of unique nitrogen environments for a given chemistry, and then use density-functional theory to calculate the energy density for all nitrogen sites, and the vacancy formation energies for the highest, lowest, and a median subset based on the energy densities. The energy density of nitrogen sites correlates with the vacancy formation energies, for binary, ternary, and high-entropy nitrides. A linear regression model predicts the vacancy formation energies using only the nearest-neighbor composition; across our eight metals, we find the largest vacancy formation energies next to Hf, then Zr, Ti, V, Cr, Ta, Nb, and the lowest near Mo. Additionally, we see that binary nitride data show qualitatively similar vacancy formation energy trends for high-entropy nitrides; however, the binary data alone are insufficient to predict the complex nitride behavior. Our model is both predictive and easily interpretable, and correlates with experimental data.

DeSilva, Charith R. [Univ. of Illinois at Urbana-C↗

DOE OSTI2025

Synthesis and Physical Properties of Manganese Chromium Nitride Thin Films Grown via Molecular Beam Epitaxy

Here, we demonstrate the ability to grow epitaxial thin films of manganese–chromium nitride (Mn x Cr 1–x N) across the entire composition range on magnesium oxide (MgO) (1 0 0) surfaces by molecular beam epitaxy. By independently controlling the ratio of the atomic fluxes of manganese and chromium, the compositional dependence of structural and electrical transport properties is determined. Soft X-ray absorption shows that the valence states of Cr( 3+ ) and Mn( 3+ ) remain identical among these MnCrN epitaxial films. The metallic transport behavior of binary manganese nitride (MnN) and chromium nitride (CrN) is suppressed in the ternary alloys. Changes in room temperature electrical resistivity of up to 100 times and 5 orders of magnitude at cryogenic temperatures are observed. This work expands the variety of nitride compounds available for epitaxial integration and could provide additional flexibility for the development of metal–semiconductor–insulator junctions for spintronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Protective anode coatings for high energy batteries

Materials for coating a metal anode in a high energy battery, anodes coated with the materials, and batteries incorporating the coated anodes are provided. Also provided are batteries that utilize the materials as electrolytes. The coatings, which are composed of binary, ternary, and higher order metal and/or metalloid oxides, nitrides, fluorides, chlorides, bromides, sulfides, and carbides limit the reactions between the electrolyte and the metal anode in a battery, thereby improving the performance of the battery, relative to a battery that employs a bare anode.

Hegde, Vinay Ishwar↗

DOE OSTI2022

Protective anode coatings for high energy batteries

Hegde, Vinay Ishwar↗

DOE OSTI2026

Thin-Film Stabilization and Magnetism of η -Carbide-Type Iron Nitrides

Transition-metal nitrides in ..eta..-carbide-type structures exhibit unusual bonding motifs and proximity to magnetic instabilities. Yet they remain unexplored in thin-film form due to the difficulty of stabilizing nitrogen-poor ternaries among competing phases. Here, we report the thin-film synthesis and phase-stability mapping of the ..eta..-nitride systems Fe-W-N and Fe-Mo-N. Amorphous Fe-M-N (M = W, Mo) combinatorial libraries deposited by reactive cosputtering crystallize upon rapid thermal annealing, enabling systematic identification of synthesis windows as a function of composition and annealing temperature. Using laboratory powder X-ray diffraction and synchrotron grazing incidence wide-angle X-ray scattering, we establish that Fe 3 Mo 3 N-based ..eta..-carbide phases form over a substantially broader compositional and thermal range than W-based compositions, where ..eta.. structures are stabilized only when the films are Fe-rich. These trends are rationalized using mixed chemical-potential vs composition phase diagrams that capture the narrow nitrogen chemical-potential stability of ..eta..-nitrides. Magnetic measurements reveal that ferromagnetism is induced in Fe-rich Fe 3.54 Mo 2.46 N with a small exchange-bias-like response that is absent in Fe 3 W 3 N-based compositions, highlighting the sensitivity of magnetic behavior to modest deviations from stoichiometry. This work establishes practical thin-film synthesis routes for ..eta..-nitride materials and demonstrates how composition can be tuned to access emergent magnetic phenomena in these complex nitrides.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Superhard Materials: Advances in the Search and Synthesis of New Materials

Materials with superior hardness can be categorized as ultrahard (Vickers hardness, H v ≥ 80 GPa) and superhard (H v ≥ 40 GPa). These materials are commonly used as cutting tools and abrasives in the machining and manufacturing industries. With its extreme hardness, diamond is the best known and most used ultrahard material for industrial applications. However, it is ineffective at cutting and drilling ferrous alloys due to diamond's high reactivity with iron and poor thermal stability in air. Additionally, the synthesis of diamond requires both high pressure (HP) and high temperature, making it an expensive process. These limitations have driven the search for alternative superhard materials that are capable of cutting steels and other materials at lower costs. This article reviews the concept of hardness and summarizes advancements in the synthesis and mechanical properties of hard materials. It begins with a review of methods to measure hardness, adding HP diffraction methods to more conventional hardness measurements. It then considers new ultrahard materials that exist within the B–C–N ternary system, with hardness approaching diamond but improved chemical stability. Finally, it surveys superhard nitrides, oxides, and borides as potential alternative materials, focusing on transition metal boride systems where the synthesis can be readily achieved at ambient pressure and scaled for industrial applications. We hope that this article serves as an overview of hard materials and guide for the comparison of data reported in the literature.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Characterizing the composition, structure, and mechanical properties of magnetron sputtering physical vapor deposition TiN and TiSiN coatings

Ti(Si)N coatings were deposited on Si wafers via magnetron sputtering physical vapor deposition technique. Scanning electron microscopy and atomic force microscopy were used to study the morphologies, grain size, and thicknesses of the different films. X-ray diffraction confirmed the formation of the titanium nitride cubic phase. X-ray photoelectron spectroscopy (XPS) was used to study the silicon and oxygen levels in the films, and high resolution XPS was used to determine the surface oxide to nitride ratios as well as the silicon–nitrogen environment. The hardness of these films was then determined with nanoindentation. It was shown that grain size and film density could be controlled by the Si level and the ion bombardment to eliminate the oxygen level in the nitride coatings, which led to the harder films. It was suggested that due to the miscibility of Si, a ternary TiSiN solid solution was formed. Stronger (200) orientation of the TiN B1-NaCl crystals was associated with increased hardness of the coatings. In conclusion, this crystalline structure was preserved after incorporating Si.

36 MATERIALS SCIENCE↗

NASA NTRS1995

Numerical Modeling of High-Temperature Corrosion Processes

Numerical modeling of the diffusional transport associated with high-temperature corrosion processes is reviewed. These corrosion processes include external scale formation and internal subscale formation during oxidation, coating degradation by oxidation and substrate interdiffusion, carburization, sulfidation and nitridation. The studies that are reviewed cover such complexities as concentration-dependent diffusivities, cross-term effects in ternary alloys, and internal precipitation where several compounds of the same element form (e.g., carbides of Cr) or several compounds exist simultaneously (e.g., carbides containing varying amounts of Ni, Cr, Fe or Mo). In addition, the studies involve a variety of boundary conditions that vary with time and temperature. Finite-difference (F-D) techniques have been applied almost exclusively to model either the solute or corrodant transport in each of these studies. Hence, the paper first reviews the use of F-D techniques to develop solutions to the diffusion equations with various boundary conditions appropriate to high-temperature corrosion processes. The bulk of the paper then reviews various F-D modeling studies of diffusional transport associated with high-temperature corrosion.

Nesbitt, James A.↗

DOE OSTI2021

Ultrawide-bandgap semiconductors: An overview

Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a renaissance exemplified by advances in material-level understanding, extensions of known concepts to new materials, novel device concepts, and new applications. as such, this focus issue presents a timely selection of papers spanning the current state of the art in UWBG materials and applications, including both experimental results and theoretical developments. It covers broad research subtopics on UWBG bulk crystals and substrate technologies, UWBG defect science and doping, UWBG epitaxy, UWBG electronic and optoelectronic properties, and UWBG power devices and emitters. In this overview article, we consolidate the fundamentals and background of key UWBG semiconductors including aluminum gallium nitride alloys (Al x Ga 1– x N), boron nitride (BN), diamond, β-phase gallium oxide (β-Ga 2 O 3 ), and a number of other UWBG binary and ternary oxides.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Plasma etching of wide bandgap and ultrawide bandgap semiconductors

The precise patterning of front-side mesas, backside vias, and selective removal of ternary alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN, SiC) and ultrawide bandgap (high Al-content alloys, boron nitride, Ga2O3, diamond) semiconductor technologies. The plasma etching conditions used are generally ion-assisted because of the strong bond strengths in these materials, and this creates challenges for the choice of masks in order to have sufficient selectivity over the semiconductor and to avoid mask erosion and micromasking issues. It can also be challenging to achieve practical etch rates without creating excessive damage in the patterned surface. The authors review the optimum choices for plasma chemistries for each of the semiconductors and acknowledge the pioneering work of John Coburn, who first delineated the ion-assisted etch mechanism.

42 ENGINEERING↗

DOE OSTI2022

CALPHAD modeling of uranium nitride (UN) fabrication routes enabled by first-principles calculations

The thermochemical details of fabricating uranium nitride (UN) by ammonolysis of uranium tetraflouride (UF 4 ) were determined using density functional theory (DFT) and CALculation of PHAse Diagrams (CALPHAD) computational methods. The thermochemical data of all binary, ternary, and quaternary U-H-N-F phases were computed using DFT, and the data for the phases that have not been measured experimentally, including UN 2 and NH 4 F(g), were combined with existing experimentally-determined data for CALPHAD modeling. The DFT data were benchmarked using experimental Gibbs energy of reaction and experimental thermochemical data for individual species. Phase diagrams relevant to the ammonolysis reaction are depicted, showing regions of stability for solid U-N, U-F and U-N-F phases. An unidentified phase produced in a previous experiment was identified as UN 0.95 F 1.2 (UNF) by comparing its X-ray diffraction spectrum to the experimental spectrum, and its formation during the fabrication of UN from UF 4 is supported by the simulated phase diagram. Here, it is calculated that UN 2 can be produced by the ammonolysis of UF 4 , but requires elevated temperatures, high NH 3 (g) partial pressure, and large amounts of flowing NH 3 (g) to avoid solid flu oride impurities in the uranium nitride. Likewise, U 2 N 3 can be produced instead at temperatures greater than 980 K. The use of silane (SiH 4 ) gas was investigated as a potential additive in the ammonolysis fabrication route to speed removal of fluorine. The addition of SiH 4 (g) offers little advantage to the removal of fluorine, and adds the complication of Si 3 N 4 formation. The use of DFT to fill in missing data to perform CALPHAD calculations demonstrated here allows for the determination of more comprehensive and trustworthy phase diagrams than the use of existing experimental data alone.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2023

Direct synthesis and chemical vapor deposition of 2D carbide and nitride MXenes

Two-dimensional transition-metal carbides and nitrides (MXenes) are a large family of materials actively studied for various applications, especially in the field of energy storage. MXenes are commonly synthesized by etching the layered ternary compounds, called MAX phases. We demonstrate a direct synthetic route for scalable and atom-economic synthesis of MXenes, including compounds that have not been synthesized from MAX phases, by the reactions of metals and metal halides with graphite, methane, or nitrogen. The direct synthesis enables chemical vapor deposition growth of MXene carpets and complex spherulite-like morphologies that form through buckling and release of MXene carpet to expose fresh surface for further reaction. The directly synthesized MXenes showed excellent energy storage capacity for lithium-ion intercalation.

Wang, Di↗

DOE OSTI2024

Virtual Substrates for Wide Bandgap AlyX1-yN Growth

Lattice-matched substrates are critical for growth of high quality, compositionally-targeted ternary AlyX1-yN compounds with properties suitable for a wide variety of next-generation opto- and power electronic applications. [DOI:10.1149/2.0111702jss] We have identified the (111) plane of transition metal carbides and nitrides as lattice matched "virtual" substrate layers that have additional benefits of electrical conductivity and appropriate coefficients of thermal expansion for nitride layer at both growth and operating temperatures. [arXiv:2208.11769 2022] In this work, (111)-oriented TaC and ZrN are grown by RF sputtering and optimized as substrate layers for AlyGa1-yN and AlyGd1-yN, respectively. TaC is demonstrated as a full proof of concept. (111)-stabilized TaC layers with a rock-salt crystal structure are annealed to improve surface crystal quality and surface morphology and then used as a template for growth of an Al0.7Ga0.3N layer by molecular beam epitaxy. X-ray diffraction (XRD) demonstrates epitaxial registry of the grown layer to the substrate. High resolution transmission electron microscopy (TEM) is used to investigate interface behavior, showing regions of abrupt interface transitions and nitrogen polar termination of the Al0.7Ga0.3N. We also grew (111)-oriented ZrN on Ti-Zr-N graded buffer layers as a lattice-matched virtual substrate for AlyGd1-yN. Structure, morphology, and strain are analyzed using XRD and atomic force microscopy. Structure and quality of initial Al0.8Gd0.2N thin films are investigated for both in-situ and ex-situ growths.

AlyX1-yN↗

DOE OSTI2021

Computational discovery of stable and metastable ternary oxynitrides

Materials design from first principles enables exploration of uncharted chemical spaces. Extensive computational searches have been performed for mixed-cation ternary compounds, but mixed-anion systems are gaining increased interest as well. Central to computational discovery is the crystal structure prediction, where the trade-off between reliance on prototype structures and size limitations of unconstrained sampling has to be navigated. We approach this challenge by letting two complementary structure sampling approaches compete. We use the kinetically limited minimization approach for high-throughput unconstrained crystal structure prediction in smaller cells up to 21 atoms. On the other hand, ternary—and, more generally, multinary—systems often assume structures formed by atomic ordering on a lattice derived from a binary parent structure. Thus, we additionally sample atomic configurations on prototype lattices with cells up to 56 atoms. Using this approach, we searched 65 different charge-balanced oxide–nitride stoichiometries, including six known systems as the control sample. The convex hull analysis is performed both for the thermodynamic limit and for the case of synthesis with activated nitrogen sources. We identified 34 phases that are either on the convex hull or within a viable energy window for potentially metastable phases. We further performed structure sampling for “missing” binary nitrides whose energies are needed for the convex hull analysis. Among these, we discovered metastable Ce3N4 as a nitride analog of the tetravalent cerium oxide, which becomes stable under slightly activated nitrogen condition µN > +0.07 eV. Given the outsize role of CeO2 in research and application, Ce3N4 is a potentially important discovery.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗