Nanoscopic mechanisms of singlet fission in amorphous molecular solid
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Pure-silica zeolite beta containing Lewis acidic framework Ti 4+ centers (Ti-Beta) is shown to catalyze the isomerization of D-glucose to L-sorbose via an intramolecular C5–C1 hydride shift. Glucose–sorbose isomerization occurs in parallel to glucose–fructose isomerization on Ti-Beta in both water and methanol solvents, with fructose formed as the predominant product in water and sorbose as the predominant product in methanol (at 373 K) at initial times and over the course of >10 turnovers. Isotopic tracer studies demonstrate that 13 C and D labels placed respectively at the C1 and C2 positions of glucose are retained respectively at the C6 and C5 positions of sorbose, consistent with its formation via an intramolecular C5–C1 hydride shift isomerization mechanism. This direct Lewis acid-mediated pathway for glucose–sorbose isomerization appears to be unprecedented among heterogeneous or biological catalysts and sharply contrasts indirect base-mediated glucose–sorbose isomerization via 3,4-enediol intermediates or via retro-aldol fragmentation and recombination of sugar fragments. Measured first-order glucose–sorbose isomerization rate constants (per total Ti; 373 K) for Ti-Beta in methanol are similar for glucose and glucose deuterated at the C2 position (within a factor of ~1.1), but are a factor of ~2.3 lower for glucose deuterated at each carbon position, leading to H/D kinetic isotope effects expected for kinetically relevant intramolecular C5–C1 hydride shift steps. Optical rotation measurements show that isomerization of D-(+)-glucose (92% enantiomeric purity) with Ti-Beta in water (373 K) led to the formation of L-(-)-sorbose (73% enantiomeric purity) and D-(-)-fructose (87% enantiomeric purity) as the predominant stereoisomers, indicating that stereochemistry is preserved at carbon centers not directly involved in intramolecular C5–C1 or C2–C1 hydride shift steps, respectively. This new Lewis acid-mediated rearrangement of glucose to sorbose does not appear to have a metalloenzyme analog.
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GeTe is a versatile base compound to produce highly efficient p-type thermoelectric materials such as the TAGS materials (AgSbTe 2 ) 1-x (GeTe) x and GeTe–PbTe nanocomposites.
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The thermoelectric properties of gate-all-around silicon nanowires (Si NWs) are calculated to determine the potential for significant power factor enhancement. The Boltzmann transport equation and relaxation time approximation are employed to develop an electron transport model used to determine the field-effect mobility, electrical conductivity, Seebeck coefficient, and power factor for Si NWs with cross-sectional areas between 4 nm × 4 nm and 12 nm × 12 nm and a range of gate biases. Electrical conductivity for the gated Si NWs was much higher than that of doped Si due to the lack of ionized impurities and correspondingly greater carrier mobility. A significant increase in electrical conductivity with decreasing Si NW cross-sectional area was also observed due to a large increase in the average carrier density. For all Si NWs, the Seebeck coefficient was lower than that of doped bulk Si due to the different energy dependence between ionized impurity and phonon-mediated scattering processes. This decrease was also confirmed with Seebeck coefficient measurements of multigated Si NWs and n-type Si thin-films. Quantum confinement was also found to increase the Seebeck coefficient for <8 nm × 8 nm Si NWs and also at high charge densities. A maximum power factor of 6.8 × 10{sup −3} W m{sup −1} K{sup −2} was calculated for the 6 nm × 6 nm Si NWs with typical Si/SiO{sub 2} interface roughness, which is 2–3 × those obtained experimentally for bulk Si. The power factor was also found to greatly depend on surface roughness, with a root-mean-square roughness of <0.8 nm necessary for power factor enhancement. An increase in ZT may also be possible if a low thermal conductivity can be obtained with minimal surface roughness.
Group-III elements act as donors in ZnO when incorporated on the Zn site. Their incorporation and behavior upon annealing is governed by diffusion, which proceeds mainly through a vacancy-assisted process. We report first-principles calculations for the migration of Al, Ga, and In donors in ZnO, based on density functional theory using a hybrid functional. From the calculated migration barriers and formation energies, we determine diffusion activation energies and estimate annealing temperatures. Impurity-vacancy binding energies and migration barriers decrease from Al to In. Activation energies for vacancy-assisted diffusion are lowest for In and highest for Al.
For scanning x-ray microscopy, many attempts have been made to image the phase contrast based on a concept of the beam being deflected by a specimen, the so-called differential phase contrast imaging (DPC). Despite the successful demonstration in a number of representative cases at moderate spatial resolutions, these methods suffer from various limitations that preclude applications of DPC for ultra-high spatial resolution imaging, where the emerging wave field from the focusing optic tends to be significantly more complicated. In this work, we propose a highly robust and generic approach based on a Fourier-shift fitting process and demonstrate quantitative phase imaging of a solid oxide fuel cell (SOFC) anode by multilayer Laue lenses (MLLs). The high sensitivity of the phase to structural and compositional variations makes our technique extremely powerful in correlating the electrode performance with its buried nanoscale interfacial structures that may be invisible to the absorption and fluorescence contrasts.
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