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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

HOLLOTRON switch for megawatt lightweight space inverters

The feasibility of satisfying the switching requirements for a megawatt ultralight inverter system using HOLLOTRON switch technology was determined. The existing experimental switch hardware was modified to investigate a coaxial HOLLOTRON switch configuration and the results were compared with those obtained for a modified linear HOLLOTRON configuration. It was concluded that scaling the HOLLOTRON switch to the current and voltage specifications required for a megawatt converter system is indeed feasible using a modified linear configuration. The experimental HOLLOTRON switch operated at parameters comparable to the scaled coaxial HOLLOTRON. However, the linear HOLLOTRON data verified the capability for meeting all the design objectives simultaneously including current density (greater than 2 A/sq cm), voltage (5 kV), switching frequency (20 kHz), switching time (300 ns), and forward voltage drop (less than or equal to 20 V). Scaling relations were determined and a preliminary design was completed for an engineering model linear HOLLOTRON switch to meet the megawatt converter system specifications.

Poeschel, R. L.↗
DOE OSTI2024

Tuning circuitry for a wireless power system

A wireless power supply power supply including first tuning circuitry coupled directly to a transmitter, the first tuning circuitry including an LCC configuration. The wireless power supply may include second tuning circuitry coupled directly to switching circuitry (e.g., an inverter) of the power supply, where the second tuning circuitry may be operable to direct power from the switching circuitry to the first tuning circuitry for supply to the transmitter, and where the second tuning circuitry includes a reactance operable to establish inductive operation of the switching circuitry at the switching frequency of the switching circuitry.

Pries, Jason L.↗
DOE OSTI2020

Cost Effective 6.5% Silicon Steel Laminate for Electric Machines

Iowa State University teamed with United Technologies Research Center and the University of Delaware and demonstrated a high switching frequency non-rare earth permanent magnet motor. A prototype motor with 400 Hz switching frequency, dummy MnBi permanent magnet with 8 MGOe energy density, and 6.5%Si steel as the laminate materials was designed, built, and tested. The performance of the prototype met the expectations showing a higher frequency motor enabled by 6.5%Si steel is a viable approach to meet DOE 2022 cost and performance targets for electric vehicle drive. Adoption of 6.5%Si steel will result in 3% improvement in energy conversion efficiency of the soft magnetic materials. In addition, the ability to use non-rare earth magnet for high power density application effectively mitigate the risk of EV traction motor from the rising rare earth price.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS2003

Magnetic Bearing Amplifier Output Power Filters for Flywheel Systems

Five power filters and two types of power amplifiers were tested for use with active magnetic bearings for flywheel applications. Filter topologies included low pass filters and low pass filters combined with trap filters at the PWM switching frequency. Two state and three state PWM amplifiers were compared. Each system was evaluated based on current magnitude at the switching frequency, voltage magnitude at 500 kHz, and power consumption. The base line system was a two state amplifier without a power filter. The recommended system is a three state power amplifier with a 50 kHz low pass filter and a 27 kHz trap filter. This system uses 5.57 W. It reduces the switching current by an order of magnitude and the 500 kHz voltage by two orders of magnitude. The relative power consumption varied depending on the test condition between 60 to 130 percent of the baseline.

Lebron-Velilla, Ramon C.↗
NASA NTRS1981

High-frequency high-voltage high-power DC-to-DC converters

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

Wilson, T. G.↗
DOE OSTI2020

Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices

Designing and optimizing high switching frequency, ultra-efficient converters requires detailed knowledge of the behavior and parasitic parameters for both active and passive components. Recently, wide bandgap transistors have enabled simultaneous increases in both switching frequency and efficiency due to higher maximum operating junction temperature limits, lower dc on-state resistances, and reduced parasitic inductances and capacitances. Yet, the early acceptance of gallium-nitride (GaN) switches was plagued by detrimental dynamic on-state resistance effects. This complex phenomenon for GaN devices is characterized by deviations in on-state resistance from dc operating characteristics based on design choices such as the magnitude and duration of both voltage and current stress, switching mode, and junction temperature. While device manufacturers have made improvements compared to early generation devices, experimental evidence from a survey of commercial GaN transistors highlight measurable change in on-state resistance still exists due to variations in voltage stress during hard-switching operation. After sharing insights for obtaining low noise measurements, an analysis method along with two metrics are proposed to characterize dynamic on-state resistance measurements for power electronics designers. Furthermore, quantifying the performance of GaN devices with standardized metrics facilitates a fair comparison between different GaN device technologies during converter development, enables manufacturing qualification for GaN switches, and provides a benchmark to catalyze improvement for the next generation of GaN device development.

14 SOLAR ENERGY↗
NASA NTRS1990

High power density dc-to-dc converters for aerospace applications

Three dc-to-dc converter topologies aimed at high-power high-frequency applications are introduced. Major system parasitics, namely, the leakage inductance of the transformer and the device output capacitance are efficiently utilized. Of the three circuits, the single-phase and three-phase versions of the dual active bridge topology demonstrate minimal stresses, better utilization of the transformer, bidirectional, and buck-boost modes of operation. All circuits operate at a constant switching frequency, thus simplifying design of the reactive elements. The power transfer characteristics and soft-switching regions on the Vout-Iout plane are identified. Two coaxial transformers with different cross-sections were built for a rating of 50 kVA. Based on the single-phase dual active bridge topology, a 50 kW, 50 kHz converter operating at an input voltage of 200 Vdc and an output voltage of 1600 Vdc was fabricated. Characteristics of current-fed output make the dual active bridge topologies amenable to paralleling and hence extension to megawatt power levels. Projections to a 1 MW system operating from a 500 Vdc input, at an output voltage of 10 kVdc and a switching frequency of 50 kHz, using MOS-controlled thyristors, coaxially wound transformers operating at three times the present current density with cooling, and multilayer ceramic capacitors, suggests an overall power density of 0.075 to 0.08 kg/kW and an overall efficiency of 96 percent.

Divan, Deepakraj M.↗
NASA NTRS1980

Research on design feasibility of high-power light-weight dc-to-dc converters for space power application

The development of 5 kW converters with 100 kHz switching frequencies, consisting of two submodules each capable of 2.5 kW of output power, is discussed. Two semiconductor advances allowed increased power levels. Field effect transistors with ratings of 11 A and 400 V were operated in parallel to provide a converter output power of approximately 2000 W. Secondly, bipolar power switching transistor was operated in conjunction with a turn-off snubber circuit to provide converter output power levels approaching 1000 W. The interrelationships between mass, switching frequency, and efficiency were investigated. Converters were constructed for operation at a maximum output power level of 200 W, and a comparison was made for operation under similar input/output conditions for conversion frequencies of 20 kilohertz and 100 kilohertz. The effects of nondissipative turn-off snubber circuitry were also examined. Finally, a computerized instrumentation system allowing the measurement of pertinent converter operating conditions as well as the recording of converter waveforms is described.

Wilson, T. G.↗
DOE OSTI2026

A Vertical GaN-Based Neutral-Pointless Three-Level Inverter for High-Performance Automotive Traction Applications

Silicon Carbide (SiC) MOSFETs have emerged as a dominant solution for electric vehicle traction inverters because of their superior power density and efficiency compared to Silicon (Si) counterparts. However, SiC devices possess inherent switching speed limitations that constrain the maximum switching frequency and hinder further power density and efficiency improvements. To address these limitations, this paper proposes a vertical Gallium Nitride (vGaN) based X-type Neutral-Pointless (NPL.X) three-level (3L) inverter for an 800V, 200 kW traction system. Integrating 700V vGaN technology within the NPL.X 3L topology enables improved drive efficiency and higher switching frequencies, resulting in enhanced power density and output power quality. To evaluate the performance benefits, this work conducts a comprehensive loss characterization of the vGaN￾based NPL.X topology, providing a direct comparison with a SiC￾based two level (2L) inverter. The results show that the proposed vGaN-based inverter achieves superior efficiency, particularly within the low-torque regions that dominate standard automotive drive cycles. The proposed vGaN-based inverter represents a critical advancement toward high-power-density and high efficiency traction drives

Halawa, Ali [Purdue Univ., West Lafayette, IN (Uni↗
DOE OSTI2021

A Compact 50kW High Power Density, Hybrid 3-Level Paralleled T-type Inverter for More Electric Aircraft Applications

The demand for high performing, lightweight, reliable inverters, increased the scope of wide bandgap and high-switching frequency based solutions. To achieve such high efficiency inverters, it is vital to focus on the system level design considerations to maximize the benefits of these advanced technologies. This paper presents an improved design based on considerations to further reap the benefits of choosing the right inverter topology; increased capabilities through paralleling devices, with reduced total number of switches; and designing a planarized inverter with PCB based busbar. Appropriate thermal analysis and heatsink design has aided in increased system power density along with the overall efficiency. Demonstration of a 50kW 3-phase 3-level paralleled T-type SiC inverter operating at 40kHz switching frequency for aircraft applications is shown to evaluate the benefits of proposed design methodology. Here, the prototype achieves a high power density of 11kW/L.

42 ENGINEERING↗
DOE OSTI2021

Real-time Implementation of a Dual-Active-Bridge Based Multi-Level Photovoltaic Converter

Silicon-carbide based, multi-level converters with dual-active-bridge (DAB) are getting attention for medium voltage, direct grid-connected, utility-scale photovoltaic (PV) applications due to their higher efficiency and power density. To de-risk complex control development for these high-voltage and high-power inverters, hardware-in-the-loop techniques are often required. Due to the high switching frequency and the large number of power electronic switches, off-the-shelf, real-time simulation tools are not yet fully developed for this application, even with FPGA-based simulators. To address this, a new co-simulation approach in FPGA is presented that utilizes Time-Stamped Bridge (TSB) for the higher frequency converters along with detailed fixed conductance based discrete device simulation of the rest of the circuit. A complex DAB-based PV converter with maximum switching frequency of 50 kHz is successfully simulated in real-time in the FPGA and the results are compared with offline simulation results. A controller hardware-in-the-loop (CHIL) platform is developed to demonstrate real-time, closed-loop test results for this DAB-based PV converter.

Dong, Zerui↗
NASA NTRS1973

Frequency shifting with a solid-state switching capacitor

Frequency shifting, commonly used in electronic signal processing, is applied in tuning, automatic frequency control, antenna element switching, phase shifting, etc. Frequency shifting can be accomplished economically and reliably with simple circuit comprising conventional resistor and solid-state switching device which can be equivalent to two capacitors, depending on switching state.

Mattauch, R. J.↗
NASA NTRS2000

The S2 VLBI Systems: DAS, RT/PT and Correlator

The S2 VLBI system synthesizes wide IF bandwidths by rapidly switching the local oscillator (LO) frequency in a small (1-4) number of baseband converters (BBC's). Data are recorded on video cassettes using an array of 8 VHS transports. Characteristics of the S2 Data Acquisition System (DAS), the S2 Record and Playback Terminals (RT and PT) and the S2 Correlator are summarized. The bandwidth synthesis (BWS) frequency switching sequence used in a series of system validation experiments is presented.

Petrachenko, William T.↗
NASA NTRS2016

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

Ikpe, Stanley A.↗
DOE OSTI2022

Novel Quadratic High Gain Boost Converter With Adaptive Soft-Switching Scheme and Reduced Conduction Loss

In this article, an improved soft-switching quadratic boost converter is proposed. Instead of inserting an additional active clamp or auxiliary zero-voltage transition circuit at the switching node, the proposed topology connects the high-voltage switching node to the input diode node by replacing one of the input diodes with a low-rated switch. The proposed topology can attain soft-switching condition for all the switches and input diode turns- off under zero-current switching (ZCS). The operation of input-side switch not only aids zero-voltage switching (ZVS) turn- on for the main switch but also helps in reducing the conduction loss. Also, the input-side switch operates under ZCS turn- on and ZVS turn- off , making it a loss economical solution. An adaptive timing scheme for driving the input switch is proposed, which can ensure soft-switching condition under varying gain and load range. The detailed operational modes, analysis, and design considerations of the proposed topology are presented. A 250 W hardware prototype is built to validate the performance of the proposed converter operating at 100 kHz switching frequency. Results with adaptive soft-switching scheme shows that the converter is modulated to achieve its best efficiency condition under various system conditions. Furthermore, a peak efficiency of 96.1% at 155 W and efficiencies above 95.75% over a wide load range are achieved using all Si devices.

14 SOLAR ENERGY↗
NASA NTRS2005

Ultrafast Laser Beam Switching and Pulse Train Generation by Using Coupled Vertical-Cavity, Surface-Emitting Lasers (VCSELS)

Ultrafast directional beam switching is achieved using coupled VCSELs. This approach is demonstrated to achieve beam switching frequencies of 40 GHz and more and switching directions of about eight degrees. This switching scheme is likely to be useful for ultrafast optical networks at frequencies much higher than achievable with other approaches.

Peter M Goorjian↗
NASA NTRS1988

Switched steerable multiple beam antenna system

A steerable multibeam five element cross-feed cluster antenna system is described. The feed power is divided into five branches. Each branch includes a switching network comprised of a plurality of time delay elements each individually controlled by a respective electromagnetic latching switch. Frequency independent individual two-dimensional beam steering at intermediate (IF) scanning frequencies is thereby provided wherein discrete incremental time delays are introduced by the switching networks into each branch and the signals recombined thereafter to form each beam. The electromagnetic latched switching reduces power consumption and permits higher power switching and reciprocal coincident tranmsit and receive operation. Frequency independence due to incremental time delay switching permits coincident reciprocal operation and steering for transmit-receive signal paths carrying different transmit-receive frequencies. Diagonal quarter wave plates in the waveguides alter polarization from the circular to orthogonal linear to provide transmitter-receiver isolation.

Richard S Iwasaki↗