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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Slow dynamic elasticity at short times

It has been reported that slow dynamic nonlinear elastic relaxations, widely thought to proceed universally in proportion to the logarithm of time after cessation of mechanical conditioning, actually recover with a smaller slope at early times, with a time of transition that varies with the grain size of the material. Furthermore, this would constitute a heretofore unreported failure of the claimed universality, while suggesting application to nondestructive evaluation and structural health monitoring. Here we present new observations at short times, in the single bead system, in cement paste, mortar, concrete, sandstone and granite. Within the limits imposed by finite duration ring-down such that the effective instant of conditioning cessation is imprecise, and the corresponding ambiguity as to the time at which relaxation begins, we find no reliable sign of such a transition, even in samples of large grain size mortar and concrete similar to those described elsewhere as having clear and late cutoffs.

58 GEOSCIENCES↗
DOE OSTI2022

Control of Surface Chemical Reactions through Solid Stiffness

Control of surface reactions is commonly achieved by modification of surface electronic structures. Here, we discover an alternative pathway for controlling surface reactions by tuning the mechanical stiffness of the underlying material. We find that in addition to the typically assumed surface electronic contribution right at the reactive site, the contribution from the deformation of the bulk region plays a vital role in controlling surface reactions. The underlying mechanism is an elastic relaxation of the solid, which depends on the material’s stiffness and can be modified by tuning bulk stoichiometry. The effect of bulk stiffness on surface reactions has been demonstrated by considering hydrogen scission reaction and oxygen incorporation reaction during corrosion of amorphous SiC in water and air, respectively. Finally, our results imply that tuning of bulk stiffness by modifying stoichiometry can provide an effective method for controlling surface reactions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Validating first-principles molecular dynamics calculations of oxide/water interfaces with x-ray reflectivity data

Metal oxide/water interfaces play a crucial role in many electrochemical and photocatalytic processes, such as photoelectrochemical water splitting, the creation of fuel from sunlight, and electrochemical CO 2 reduction. First-principles electronic structure calculations can reveal unique insights into these processes, such as the role of the alignment of the oxide electronic energy levels with those of liquid water. An essential prerequisite for the success of such calculations is the ability to predict accurate structural models of these interfaces, which in turn requires careful experimental validation. Here we report a general, quantitative validation protocol for first-principles molecular dynamics simulations of oxide/aqueous interfaces. The approach makes direct comparisons of interfacial x-ray reflectivity (XR) signals from experimental measurements and those obtained from ab initio simulations with semilocal and van der Waals functionals. The protocol is demonstrated here for the case of the Al 2 O 3 (001)/water interface, one of the simplest oxide/water interfaces. We discuss the technical requirements needed for validation, including the choice of the density functional, the simulation cell size, and the optimal choice of the thermodynamic ensemble. Our results establish a general paradigm for the validation of structural models and interactions at solid/water interfaces derived from first-principles simulations. Furthermore, while there is qualitative agreement between the simulated structures and the experimental best-fit structure, direct comparisons of simulated and measured XR intensities show quantitative discrepancies that derive from both bulk regions (i.e., alumina and water) as well as the interfacial region, highlighting the need for accurate density functionals to properly describe interfacial interactions. Our results show that XR data are sensitive not only to the atomic structure (i.e., the atom locations) but also to the electron-density distributions in both the substrate and at the interface.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Two-dimensional electron systems in perovskite oxide heterostructures: Role of the polarity-induced substitutional defects

The discovery of a two-dimensional electron system (2DES) at the interfaces of perovskite oxides such as LaAlO 3 and SrTiO 3 has motivated enormous efforts in engineering interfacial functionalities with this type of oxide heterostructures. However, the fundamental origins of the 2DES are still not understood, e.g., the microscopic mechanisms of coexisting interface conductivity and magnetism. In this paper, we report a comprehensive spectroscopic investigation on the depth profile of 2DES-relevant Ti 3d interface carriers using depth- and element-specific techniques like standing-wave excited photoemission and resonant inelastic scattering. We found that one type of Ti 3d interface carriers, which give rise to the 2DES are located within three unit cells from the n-type interface in the SrTiO 3 layer. Unexpectedly, another type of interface carriers, which are polarity-induced Ti-on-Al antisite defects, reside in the first three unit cells of the opposing LaAlO3 layer (~10 Å). Our findings provide a microscopic picture of how the localized and mobile Ti 3d interface carriers distribute across the interface and suggest that the 2DES and 2D magnetism at the LaAlO 3 /SrTiO 3 interface have disparate explanations as originating from different types of interface carriers.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Dependence of the electronic structure of the EuS/InAs interface on the bonding configuration

The EuS/InAs interface has recently attracted attention for the possibility of inducing magnetic exchange correlations in a strong spin-orbit semiconductor, which could be useful for topological quantum devices. We use density functional theory with a machine-learned Hubbard U correction [Yu et al., npj Comput. Mater. 6, 180 (2020)] to elucidate the effect of the bonding configuration at the interface on the electronic structure. For all interface configurations considered here, we find that the EuS valence band maximum (VBM) lies below the InAs VBM. In addition, dispersed states emerge at the top of the InAs VBM at the interface, which do not exist in either material separately. These states are contributed mainly by the InAs layer adjacent to the interface. They are localized at the interface and may be attributed to charge transfer from the EuS to the InAs. The interface configuration affects the position of the EuS VBM with respect to the InAs VBM, as well as the dispersion of the interface states. For all interface configurations studied here, the induced magnetic moment in the InAs is small. Our results suggest that this interface, in its coherent form studied here, may not be promising for inducing equilibrium magnetic properties in InAs.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Effect of surface segregation on the oxidation resistance of Cu 3 Pt ( 100 )

Alloying element segregation often occurs under a reactive environment but its interplay with the subsequent surface oxidation of the alloy remains unclear. Using synchrotron-based ambient-pressure x-ray photoelectron spectroscopy, we dynamically monitor the surface segregation in Cu 3 Pt(100) in response to temperature and oxygen gas. Vacuum annealing leads to surface segregation of Cu along with the enrichment of Pt in the subsurface region. Upon switching to the O 2 atmosphere, dissociative chemisorption of oxygen does not change the surface segregation profile from that under the vacuum annealing condition. A stepwise increase in the oxygen pressure results in the transformation pathway of Cu → Cu 2 O → CuO, in which the selective oxidation of Cu gives rise to further accumulation of Pt underneath the oxide/alloy interface that hinders the supply of Cu from the bulk to the oxide/alloy interface, thereby leading to the termination of the surface oxidation after the Cu 2 O → CuO conversion is completed. This differs from the transformation pathway of Cu → Cu 2 O → Cu 2 O/CuO for the oxidation of pure Cu and Cu-Au alloys, in which the oxidation of Cu continues and the Cu 2 O/CuO bilayer growth is constantly maintained. Furthermore, these key differences provide useful insight into alloy design for controlling the surface properties such as corrosion resistance and catalytic performance of Cu base alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2023

First principles study of the electronic structure of the Ni 2 MnIn / InAs and Ti 2 MnIn / InSb interfaces

We present a first principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds, Ti 2 MnIn and Ni 2 MnIn, and the III-V semiconductors, InSb and InAs, respectively. We use density functional theory (DFT) with a machine-learned Hubbard U correction determined by Bayesian optimization. Here, we evaluate these interfaces for prospective applications in Majorana-based quantum computing and spintronics. In both interfaces, states from the Heusler penetrate into the gap of the semiconductor, decaying within a few atomic layers. The magnetic interactions at the interface are weak and local in space and energy. Magnetic moments of less than 0.1 µB are induced in the two atomic layers closest to the interface. The induced spin polarization around the Fermi level of the semiconductor decays within a few atomic layers. The decisive factor for the induced spin polarization around the Fermi level of the semiconductor is the spin polarization around the Fermi level in the Heusler, rather than the overall magnetic moment. As a result, the ferrimagnetic narrow-gap semiconductor Ti 2 MnIn induces a more significant spin polarization in the InSb than the ferromagnetic metal Ni 2 MnIn induces in the InAs. This is explained by the position of the transition metal d states in the Heusler with respect to the Fermi level. Based on our results, these interfaces are unlikely to be useful for Majorana devices but could be of interest for spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Epitaxial growth of hexagonal BaNi O 3–δ thin films on SrTi O 3 (111) substrates

Transition metal oxides containing nickel species in oxidation states higher than 3+ often exhibit high catalytic activity, which makes them promising for applications as advanced electrocatalysts for water splitting and fuel cells. Here, we examine the structure and properties of BaNiO 3 (BNO) thin films, containing formally Ni 4+ , grown on SrTiO 3 (111) substrates using oxygen-plasma–assisted molecular beam epitaxy. X-ray diffraction and scanning transmission electron microscopy measurements reveal that BNO films have a hexagonal structure with $c$- and $a$-axes of mixed textures showing epitaxial relationships BNO (0001) ∥ SrTiO 3 (111) and BNO (10$\overline{1}$0) ∥ SrTi O 3 (111), respectively. The formation of the $a$-axis texture is dominant due to the smaller lattice mismatch with the substrate. Here, density functional theory calculations confirm that the hexagonal BNO film with the $a$-axis texture is energetically more favorable than the competing $c$-axis texture. Detailed spectroscopy data analysis indicates that hexagonal BNO films contain mixtures of Ni 2+ , Ni 3+ , and Ni 4+ species, with Ni 4+ being dominant. Our study provides insights into stabilizing Ni 4+ in complex oxides, which is important for further exploration of the potential of materials containing Ni 4+ .

36 MATERIALS SCIENCE↗
DOE OSTI2024

Unraveling the origin of antiferromagnetic coupling at YIG/permalloy interface

We investigate the structural and electronic origin of antiferromagnetic (AFM) coupling in the yttrium iron garnet (YIG) and permalloy (Ni 80 ⁢Fe 20 , Py) bilayer system at the atomic level. Ferromagnetic resonance (FMR) spectra reveal unique hybrid modes in samples prepared with surface ion milling, indicative of antiferromagnetic exchange coupling at the YIG/Py interface. Using atomic resolution scanning transmission electron microscopy (STEM), we found that AFM coupling appears at the YIG/Py interface of the tetrahedral YIG surface formed with ion milling. Here, the STEM measurements suggest that the interfacial AFM coupling is predominantly driven by an oxygen-mediated superexchange coupling mechanism, which is confirmed by the density-functional theory (DFT) calculations to be energetically favorable. Thus, the combined experimental and theoretical results reveal the critical role of interfacial atomic structure in determining the type of magnetic coupling in a YIG/ferromagnet heterostructure, and prove that the interfacial structure can be experimentally tuned by surface ion milling.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Anomalous proximitized transport in metal/quantum magnet heterostructure Bi 2 Ir 2 O 7 /Yb 2 Ti 2 O 7

Fluctuations of quantum spins play a crucial role in the emergence of exotic magnetic phases and excitations. The lack of the charge degree of freedom in insulating quantum magnets, however, precludes such fluctuations from mediating electronic transport. Here, we show that the quantum fluctuations of a localized frustrated magnet induce strong proximitized charge transport of the conduction electrons in a synthetic heterostructure comprising an epitaxial Bi 2 Ir 2 O 7 ultrathin film on a single crystal of Yb 2 Ti 2 O 7 . The proximity effects are evidenced by the scaling behavior of the Bi 2 Ir 2 O 7 resistance in correspondence with the dynamic scaling of the dynamic spincorrelation function of Yb 2 Ti 2 O 7 , which is a result of quantum fluctuations near a multiphase quantum critical point. The proximitized transport in Bi 2 Ir 2 O 7 can be effectively tuned by a magnetic field through suppressing the quantum spin fluctuations (QSFs) as well as inducing transitions via magnetic anisotropy in Yb 2 Ti 2 O 7 . In this study, we establish a pathway for harnessing QSFs in magnetic insulators with electric transport, offering exciting prospects for potential applications in the realm of quantum spintronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Imaging surface topography with coherent x-ray reflectivity: Theory, kinematics, and simulations

A theoretical formalism is described for understanding coherent x-ray reflectivity (CXR) from the surface of a semi-infinite crystal having a variable surface topography, described by the height profile ℎ(𝑥,𝑦). The surface topography is imaged as a complex “effective density,” obtained from the phasing and inversion of the coherent x-ray reflectivity data, measured through a rocking scan centered at a vertical momentum transfer 𝑄$^{0}_{𝑧}$ and a vertical range Δ⁢𝑄 𝑧 . The formalism predicts that the effective density has an amplitude with a maximum located at the surface height for each position within the surface plane. The phase of the effective density has a lateral variation that is controlled by the surface height and a vertical variation that reflects a combination of the interfacial structure and specific choice of measurement conditions. This understanding enables direct observation of nanometer-scale interfacial topography, i.e., ℎ⁡(𝑥,𝑦)⁢𝑐 𝑠 (where 𝑐 𝑠 is the vertical substrate lattice parameter) with Å-scale sensitivity to surface height. Numerical simulations illustrate and confirm the theoretical results. These results show how the interpretation of the interfacial density phase obtained by CXR data inversion (i.e., surface topography with respect to a flat surface) is conceptually similar to that previously known for Bragg coherent diffraction imaging (BCDI) measurements of isolated nanoparticles (i.e., lattice displacements with respect to an ideal crystal lattice). This suggests that CXR can be thought of as a form of dark field imaging with respect to the bright field BCDI approach. An implication of these results is that interfacial imaging may bypass some of the significant challenges associated with BCDI imaging of multiple particles having different orientations.

X-ray imaging↗
DOE OSTI2024

Colloquium : Sliding and pinning in structurally lubric 2D material interfaces

A plethora of two-dimensional (2D) materials have been introduced in physics and engineering in the past two decades. Their robust, membranelike sheets permit (mostly require) deposition, giving rise to solid-solid dry interfaces whose mobility, pinning, and general tribological properties under shear stress are currently being understood and controlled, both experimentally and theoretically. Here, in this Colloquium simulated case studies of twisted graphene systems are used as a prototype workhorse tool to demonstrate and discuss the general picture of 2D material interface sliding. First highlighted is the crucial mechanical difference, often overlooked, between small and large incommensurabilities, which corresponds to, for example, small and large twist angles in graphene interfaces. In both cases, focusing on flat, structurally lubric or “superlubric” geometries, the generally separate scalings with the area of static friction in pinned states and of kinetic friction during sliding are elucidated and reviewed, tangled as they are with the effects of velocity, temperature, load, and defects. The roles of island boundaries and elasticity are also discussed, and compared when possible to results in the literature for systems other than graphene. It is proposed that the resulting picture of pinning and sliding should be applicable to interfaces in generic 2D materials that are of importance for the physics and technology of existing and future bilayer and multilayer systems.

2-dimensional systems↗
DOE OSTI2026

Magnetoelectric properties at the Co/AlN(0001) interface

AlN nitride is a large-band-gap polar material that has gained interest due to its ability to become ferroelectric and its compatibility with Si- and GaN-based technologies. This compound could, therefore, be a good candidate to design new artificial multiferroics if combined with a ferromagnetic electrode. For this work, we performed first-principles calculations to investigate the set up of the magnetoelectric coupling at the Co/AlN(0001) interface. Our results describe a complex interfacial atomic structure with variable local magnetic properties as a function of the atom alignment. We predict an average variation of interface spin magnetization, when the polarization is reversed, of 3.83 𝜇B nm −2 , close to the values already reported in the literature at metal/oxide interfaces. This confirms the potential of this AlN-based ferroelectric compound to be used in future voltage-controlled spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Probing Ice-Rule-Breaking Transition in Dy 2 Ti 2 O 7 Thin Film by Proximitized Transport and Magnetic Torque

While the spin-ice state of bulk pyrochlores such as Dy 2⁢ Ti 2 ⁢O 7 and Ho 2⁢ Ti 2 ⁢O 7 has been extensively studied in the past several decades due to its unique degenerate ground state and emergent monopole excitation, whether it survives in the thin-film form remains a mystery. The limited volume of the thin-film sample makes it challenging to study the intrinsic magnetic properties. Here, we synthesized 18-nm-thick Dy 2⁢ Ti 2 ⁢O 7 thin film on yttria-stabilized zirconia with 9.5 mol% Y 2 ⁢O 3 substrate and capped it by a thin conductive Bi 2 ⁢Ir 2 ⁢O 7 layer and performed the proximitized magnetoresistance measurements. Our Letter found that the ice-rule-breaking phase transition survives but with a modified effective nearest-neighbor interaction (𝐽 eff =1.054 K) and distorted Ising spin axes (𝜀 = +0.051) compared to the bulk crystal. Furthermore, the results are supported by the simultaneously measured capacitive torque magnetometry. Our Letter demonstrates that proximitized transport is an effective tool for thin films of insulating frustrated magnets.

Magnetic interactions↗
DOE OSTI2025

Computational analysis of interface-driven spin-orbit coupling in molecular adsorbates on transition metal dichalcogenides

Spin-orbit coupling (SOC) lifts molecular orbital degeneracy, enabling bilevel electronic platforms suitable for next-generation digital devices. However, common light-atom molecular feedstocks exhibit weak SOC due to the absence of heavy elements. To enhance SOC without synthesizing new materials, we leverage interfacial interactions between molecules and transition-element-based solid-state materials. This computational study investigates SOC splitting in metal-phthalocyanine adsorbed on transition metal dichalcogenides (TMDs) using density functional theory (DFT). The enhanced SOC splitting is attributed to strong orbital hybridization at the molecule-substrate interface. Specifically, Zn-phthalocyanine (ZnPC) on monolayer Mo⁢S 2 achieves a notable SOC splitting of ∼8 meV. Furthermore, when ZnPC forms self-assembled chains on Mo⁢S 2 , the splitting increases to ∼20 meV, driven by the formation of hybrid bands modulated by molecular periodicity. Furthermore, these findings highlight the role of interfacial and intermolecular interactions in inducing and enhancing SOC in surface-adsorbed molecules, providing a new strategy for molecular spintronic materials without complex synthetic efforts.

2-dimensional systems↗
NASA NTRS1972

Industrial waste pollution

The characteristics and effects of industrial waste pollution in the Chesapeake Bay are discussed. The sources of inorganic and organic pollution entering the bay are described. The four types of pollutants are defined as: (1) inorganic chemical wastes, (2) naturally occurring organic wastes, (3) synthetic organic wastes (exotics) and (4) thermal effluents. The ecological behavior of industrial wastes in the surface waters is analyzed with respect to surface film phenomena, interfacial phenomena, and benthis phenomena

Jensen, L. D.↗