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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Upper critical magnetic field and multiband superconductivity in artificial high-𝑇 𝑐 superlattices of nano quantum wells

Artificial high-T c superlattices (AHTS) composed of quantum building blocks with tunable superconducting critical temperature have been synthesized by engineering their nanoscale geometry using the Bianconi-Perali Valletta (BPV) two-gap superconductivity theory. These quantum heterostructures consist of quantum wells made of superconducting, modulation-doped Mott insulators (S), confined by a metallic (N) potential barrier. The lattice geometry has been carefully engineered to induce the predicted Fano-Feshbach shape resonance between the gaps, near a topological Lifshitz transition. Here, we validate the BPV theory by providing compelling experimental evidence that AHTS samples, at the peak of the superconducting dome, exhibit resonant two-band, two-gap superconductivity. This is demonstrated by measuring the temperature dependence of the upper critical magnetic field, μ 0 H c2 , in samples with superlattice periods 3.3 < d < 5.28 nm and L/d ratios close to the magic value 2/3 (where L is the thickness of the superconducting La 2 CuO 4 layer and d is the superlattice period). Here, the data reveal the predicted upward concavity in H c2 (T) and a characteristic kink in the coherence length as a function of temperature, confirming the predicted two-band superconductivity with Fermi velocity ratio ≈ 0.25 and significant pair-exchange term among the two condensates.

Heterostructures↗
DOE OSTI2024

DNA-mediated assembly of Au bipyramids into anisotropic light emitting kagome superlattices

Colloidal crystal engineering with DNA allows one to design diverse superlattices with tunable lattice symmetry, composition, and spacing. Most of these structures follow the complementary contact model, maximizing DNA hybridization on building blocks and producing relatively close-packed lattices. Here, low-symmetry kagome superlattices are assembled from DNA-modified gold bipyramids that can engage only in partial DNA surface matching. The bipyramid dimensions and DNA length can be engineered for two different superlattices with rhombohedral unit cells, including one composed of a periodic stacking of kagome lattices. Enabled by the partial facet alignment, the kagome lattices exhibit lattice distortion, bipyramid twisting, and planar chirality. When conjugated with Cy-5 dyes, the kagome lattices serve as cavities with high-density optical states and large Purcell factors along lateral directions, leading to strong dipole radiation along thezaxis and facet-dependent light emission. Such complex optical properties make these materials attractive for lasers, displays, and quantum sensing constructs.

Science & Technology - Other Topics↗
DOE OSTI2026

Stabilizing in-transition phases of superlattices through shape control of silver nanocrystals

In nanoscale assemblies, observations of structures in the transition pathways between high-symmetry lattices are rare because of the inherent instability of the intermediate phases. Here, we report that silver nanocrystals with shapes similar to truncated octahedra (mecons) self-assemble into superlattices that are stable and resemble a previously unobserved phase that bridges face-centered and body-centered cubic structures along the Nishiyama-Wassermann martensitic pathway. These superlattices exhibited high structural purity and stability and created a robust and tunable dissymmetric phase landscape. Notably, light-matter coupling emerged in these silver nanocrystal superlattices through plasmon-photon hybridization at the quantum level.

36 MATERIALS SCIENCE↗
NASA NTRS1980

Incorporation of superlattice crystal layers in multijunction solar cells

Superlattice layers are effective in decreasing the density of dislocations in lattice mismatched heterostructures at least four orders of magnitude. Hence it was proposed to utilize this feature of superlattices to alleviate the problems due to misfit dislocations generated in the regions between two or more photovoltaic collecting junctions. A further advantage is that the possibility is presented for using silicon as a low cost substrate as well as for the low band gap junction. In the test case, a silicon low gap cell was connected to a GaAs.7P.3 high gap cell through a connecting region containing a GaAs/GaP superlattice.

Blackslee, A. E.↗
NASA NTRS1981

Silicon superlattices: Theory and application to semiconductor devices

Silicon superlattices and their applicability to improved semiconductor devices were studied. The device application potential of the atomic like dimension of III-V semiconductor superlattices fabricated in the form of ultrathin periodically layered heterostructures was examined. Whether this leads to quantum size effects and creates the possibility to alter familiar transport and optical properties over broad physical ranges was studied. Applications to improved semiconductor lasers and electrondevices were achieved. Possible application of silicon sperlattices to faster high speed computing devices was examined. It was found that the silicon lattices show features of smaller fundamental energyband gaps and reduced effective masses. The effects correlate strongly with both the chemical and geometrical nature of the superlattice.

Moriarty, J. A.↗
NASA NTRS1985

Structure variation of the index of refraction of GaAs-AlAs superlattices and multiple quantum wells

A detailed calculation of the index refraction of various GaAs-AlAs superlattices is presented for the first time. The calculation is performed by using a hybrid approach which combines the k-p method with the pseudopotential technique. Appropriate quantization conditions account for the influence of the superstructures on the electronic properties of the systems. The results of the model are in very good agreement with the experimental data. In comparison with the index of refraction of the corresponding AlGaAs alloy, characterized by the same average mole fraction of Al, the results indicate that the superlattice index of refraction values attain maxima at the various quantized transition energies. For certain structures the difference can be as large as 2 percent. These results suggest that the waveguiding and dispersion relation properties of optoelectronic devices can be tailored to design for specific optical application by an appropriate choice of the superlattice structure parameters.

Kahen, K. B.↗
NASA NTRS1986

Theoretical Study of the Transverse Dielectric Constant of Superlattices and Their Alloys

The optical properties of III to V binary and ternary compounds and GaAs-Al(x)Ga(1-x)As superlattices are determined by calculating the real and imaginary parts of the transverse dielectric constant. Emphasis is given to determining the influence of different material and superlattice parameters on the values of the index of refraction and absorption coefficient. In order to calculate the optical properties of a material, it is necessary to compute its electronic band structure. This was accomplished by introducing a partition band structure approach based on a combination of the vector k x vector p and nonlocal pseudopotential techniques. The advantages of this approach are that it is accurate, computationally fast, analytical, and flexible. These last two properties enable incorporation of additional effects into the model, such as disorder scattering, which occurs for alloy materials and excitons. Furthermore, the model is easily extended to more complex structures, for example multiple quantum wells and superlattices. The results for the transverse dielectric constant and absorption coefficient of bulk III to V compounds compare well with other one-electron band structure models and the calculations show that for small frequencies, the index of refraction is determined mainly by the contibution of the outer regions of the Brillouin zone.

Kahen, K. B.↗
NASA NTRS1985

An analysis of doping modulated superlattice structures

A new method of growing doping modulated superlattice structures is discussed. This method uses organo-metallic chemical vapor deposition (MO-CVD) with the added feature of controlled plasma in the growth regions. The main objective was to study how the growth environment affected the electronic and optical properties of the superlattice structures. Because a serious safety hazard was discovered in the growth process, no superlattice structures were fabricated and the research on this material had to be terminated. The hazard had to do with the lack of adequate means for the disposal of toxic elemental beryllium.

Buoncristiani, A. M.↗
NASA NTRS1986

Exciton effects in the index of refraction of multiple quantum wells and superlattices

Theoretical calculations of the index of refraction of multiple quantum wells and superlattices are presented. The model incorporates both the bound and continuum exciton contributions for the gamma region transitions. In addition, the electronic band structure model has both superlattice and bulk alloy properties. The results indicate that large light-hole masses, i.e., of about 0.23, produced by band mixing effects, are required to account for the experimental data. Furthermore, it is shown that superlattice effects rapidly decrease for energies greater than the confining potential barriers. Overall, the theoretical results are in very good agreement with the experimental data and show the importance of including exciton effects in the index of refraction.

Kahen, K. B.↗
NASA NTRS1988

An exactly solvable model for calculating critical misfit and thickness in epitaxial superlattices - Layers of equal elastic constants and thicknesses

A parabolic interaction potential has been used to develop a model for calculating the misfit dislocation (MD) energy in the case of a superlattice of alternating layers of materials with equal elastic constants and thicknesses. The model, which is believed to be a good one for small misfits and to have some merit for covalent bonded materials, is exactly solvable for the critical thickness above which it is energetically favorable to lose coherency by the introduction of MDs into the interfaces. It was found, for a given misfit f, that the critical thickness for epitaxial superlattices free from their substrate is somewhat more than four times that for a single epilayer on a thick substrate. Furthermore, the critical thickness varies almost inversely with misfit to the power 1.22 when Poisson's ratio is 1/3. It was also shown that the critical misfit f(c) obtained by equating maximal misfit strain and MD energies is a significant overestimate of f(c). The results for a superlattice are compared with those of a thin layer on a thick substrate.

Van Der Merwe, Jan H.↗
NASA NTRS1990

Superlattice Long-Wavelength Infrared Sensors

Superlattice of LaN and Si detects at wavelengths up to 12 micrometers. If LaN grown epitaxially on silicon, sensitivity of silicon-based photodetectors extended farther into infrared wavelength region with high quantum detection efficiency by use of LaN/Si superlattices. In principle, by appropriate choice of thicknesses of layers, effective band-gap energy of superlattice structure set to any desired value between band gaps of two materials.

Fathauer, Robert W.↗
NASA NTRS1990

Growth and properties of Hg-based quantum well structures and superlattices

An overview of the properties of HgTe-CdTe quantum well structures and superlattices (SL) is presented. These new quantum structures are candidates for use as new long wavelength infrared (LWIR) and very long wavelength infrared (VLWIR) detectors, as well as for other optoelectronic applications. Much has been learned within the past two years about the physics of such structures. The valence band offset has been determined to be approx. 350 meV, independent of temperature. The occurrence of electron and hole mobilities in excess of 10(exp 5)cm(exp 2)/V center dot s is now understood on the basis of SL band structure calculations. The in-plane and out-of-plane electron and hole effective masses have been measured and interpreted theoretically for HgTe-CdTe superlattices. Controlled substitutional doping of superlattices has recently been achieved at North Carolina State University (NCSU), and modulation-doped SLs have now been successfully grown and studied. Most recently, a dramatic lowering of the growth temperature of Hg-based quantum well structure and SLs (to approx. 100 C) has been achieved by means of photoassisted molecular beam epitaxy (MBE) at NCSU. A number of new devices have been fabricated from these doped multilayers.

Schetzina, J. F.↗
NASA NTRS1991

The mechanisms and temperature dependence of superlattice stacking fault formation in the single-crystal superalloy PWA 1480

The mechanism of the formation of superlattice staking faults in the single-crystal nickel-base superalloy PWA 1480 was investigated by observing deformation microstructures in the superalloy single crystals in the temperature range 20-1100 C. Results showed that, in addition to superlattice stacking faults observed after slow strain rate deformation at temperatures from 700 to 950 C, a high-density of superlattice staking faults formed after deformation at 200 C and below. The mechanisms of fault formation, which are different in the high- and the low-temperature regimes, are discussed.

Milligan, Walter W.↗
NASA NTRS1992

Superlattice barrier varactors

SBV (Single Barrier Varactor) diodes have been proposed as alternatives to Schottky barrier diodes for harmonic multiplier applications. However, these show a higher current than expected. The excess current is due to X valley transport in the barrier. We present experimental results showing that the use of a superlattice barrier and doping spikes in the GaAs depletion regions on either side of the barrier can reduce the excess current and improve the control of the capacitance vs. voltage characteristic. The experimental results consist of data taken from two types of device structures. The first test structure was used to study the performance of AlAs/GaAs superlattice barriers. The wafer was fabricated into 90 micron diameter mesa diodes and the resulting current vs. voltage characteristics were measured. A 10 period superlattice structure with a total thickness of approximately 400 A worked well as an electron barrier. The structure had a current density of about one A/sq cm at one volt at room temperature. The capacitance variation of these structures was small because of the design of the GaAs cladding layers. The second test structure was used to study cladding layer designs. These wafers were InGaAs and InAlAs layers lattice matched to an InP substrate. The layers have n(+) doping spikes near the barrier to increase the zero bias capacitance and control the shape of the capacitance vs. voltage characteristic. These structures have a capacitance ratio of 5:1 and an abrupt change from maximum to minimum capacitance. The measurements were made at 80 K. Based on the information obtained from these two structures, we have designed a structure that combines the low current density barrier with the improved cladding layers. The capacitance and current-voltage characteristics from this structure are presented.

Raman, C.↗
NASA NTRS1992

New class of Si-based superlattices - Alternating layers of crystalline Si and porous amorphous Si(1-x)Ge(x) alloys

Superlattices consisting of alternating layers of crystalline Si and porous amorphous Si(1-x)Ge(x) have been fabricated. This is accomplished by first growing a Si/Si(0.7)Ge(0.3) superlattice by molecular beam epitaxy, followed by Ar-ion milling to form mesa structures, and finally by immersion in HF:HNO3:H2O. This solution creates a porous structure similar to that created by anodic etching, and a high selectivity is observed for the conversion of the alloy layers relative to the Si layers. The degree of selectivity is found to depend on alloy-layer thickness and strain. Superlattices have been fabricated from 1-micron wide mesas with Si(0.7)Ge(0.3) layers fully converted to 5-nm thick porous amorphous material.

Fathauer, R. W.↗
NASA NTRS1993

Effect of disorder on the optical properties of short period superlattices

The optical properties of disordered short period superlattices are studied using a one-dimensional tight-binding model. A difference vector and disorder structure factor are proposed to characterize the disordered superlattice. The density of states, participation number, and optical absorption coefficients for both ordered and disordered superlattices are calculated as a function of energy. The results show that introduction of disorder into an indirect band gap material enhances the optical transition near the indirect band edge.

Strozier, J. A.↗
NASA NTRS1993

Spectroscopic ellipsometric characterization of Si/Si(1-x)Ge(x) strained-layer superlattices

Spectroscopic ellipsometry (SE) was employed to characterize Si/Si(1-x)Ge(x) strained-layer superlattices. An algorithm was developed, using the available optical constants measured at a number of fixed x values of Ge composition, to compute the dielectric function spectrum of Si(1-x)Ge(x) at an arbitrary x value in the spectral range 17 to 5.6 eV. The ellipsometrically determined superlattice thicknesses and alloy compositional fractions were in excellent agreement with results from high-resolution x ray diffraction studies. The silicon surfaces of the superlattices were subjected to a 9:1 HF cleaning prior to the SE measurements. The HF solution removed silicon oxides on the semiconductor surface, and terminated the Si surface with hydrogen-silicon bonds, which were monitored over a period of several weeks, after the HF cleaning, by SE measurements. An equivalent dielectric layer model was established to describe the hydrogen-terminated Si surface layer. The passivated Si surface remained unchanged for greater than 2 h, and very little surface oxidation took place even over 3 to 4 days.

Yao, H.↗
NASA NTRS1994

Effect of the degree of disorder on electronic and optical properties in random superlattices

A three-dimensional tight-binding calculation is developed and used to study disorder effects in a realistic random superlattice. With increasing disorder, a tendency of possible indirect-direct band-gap transition is suggested. Direct evidence of mobility edges between localized and extended states in three-dimensional random systems is given. As system disorder increases, the optical absorption intensities increase dramatically from five to forty-five times stronger than the ordered (GaAs)(sub 1)/(AlAs)(sub 1) superlattice. It is believed that the degree of disorder significantly affects electronic and optical properties of GaAs/AlAs random superlattices.

Wang, E. G.↗