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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Unusual Ferromagnetic Band Evolution and High Curie Temperature in Monolayer 1T‐CrTe2 on Bilayer Graphene

2D van der Waals ferromagnets hold immense promise for spintronic applications due to their controllability and versatility. Despite their significance, the realization and in-depth characterization of ferromagnetic materials in atomically thin single layers, close to the true 2D limit, has been scarce. Here, a successful synthesis of monolayer (ML) 1T-CrTe2 is reported on a bilayer graphene (BLG) substrate via molecular beam epitaxy. Using angle-resolved photoemission spectroscopy and magneto-optical Kerr effect measurements, that the ferromagnetic transition is observed at the Curie temperature (TC) of 150 K in ML 1T-CrTe2 on BLG, accompanied by unconventional temperature-dependent band evolutions. The spectroscopic analysis and first-principle calculations reveal that the ferromagnetism may arise from Goodenough-Kanamori super-exchange and double-exchange interactions, enhanced by the lattice distortion and the electron doping from the BLG substrate. These findings provide pivotal insight into the fundamental understanding of mechanisms governing 2D ferromagnetism and offer a pathway for engineering higher TC in 2D materials for future spintronic devices.

Park, Kyoungree↗
DOE OSTI2026

A personal spin on spin currents

This article contains my personal account on how I got interested in spin transport phenomena, which ultimately resulted in investigating multiple facets of spin–orbit torques, as well as magnetization dynamics. Originally this research focused on questions that seemed rather academic with little relevance to applications. But over time it developed into one of the key research areas for modern spintronic devices. This journey started off with investigating spin polarized charge currents, later focused on pure spin currents, and ultimately explored spin waves (magnons) as the potential carriers of spin information. Most of this work was performed in the Magnetic Films group of the Argonne National Laboratory, which for more than three decades used to be one of the world-leading places for magnetism research.

36 MATERIALS SCIENCE↗
DOE OSTI2024

MnRhBi 3 : A Cleavable Antiferromagnetic Metal

Cleavable metallic antiferromagnets may be of use for low-dissipation spintronic devices; however, few are currently known. Here, in this study, we present orthorhombic MnRhBi 3 as one such compound and present a thorough study of its physical properties. Exfoliation is demonstrated experimentally, and the cleavage energy and electronic structure are examined by density functional theory calculations. It is concluded that MnRhBi 3 is a van der Waals-layered material that cleaves easily between neighboring Bi layers and that the Bi atoms have lone pairs extending into the van der Waals gaps. A series of four phase transitions are observed below room temperature, and neutron diffraction shows that at least two of the transitions involve the formation of antiferromagnetic order. Anomalous thermal expansion points to a crystallographic phase transition and/or strong magnetoelastic coupling. This work reveals a complex phase evolution in MnRhBi 3 and establishes this cleavable antiferromagnetic metal as an interesting material for studying the interplay of structure, magnetism, and transport in the bulk and ultrathin limits, as well as the role of lone pair electrons in interface chemistry and proximity effects in van der Waals heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Synthesis and Physical Properties of Manganese Chromium Nitride Thin Films Grown via Molecular Beam Epitaxy

Here, we demonstrate the ability to grow epitaxial thin films of manganese–chromium nitride (Mn x Cr 1–x N) across the entire composition range on magnesium oxide (MgO) (1 0 0) surfaces by molecular beam epitaxy. By independently controlling the ratio of the atomic fluxes of manganese and chromium, the compositional dependence of structural and electrical transport properties is determined. Soft X-ray absorption shows that the valence states of Cr( 3+ ) and Mn( 3+ ) remain identical among these MnCrN epitaxial films. The metallic transport behavior of binary manganese nitride (MnN) and chromium nitride (CrN) is suppressed in the ternary alloys. Changes in room temperature electrical resistivity of up to 100 times and 5 orders of magnitude at cryogenic temperatures are observed. This work expands the variety of nitride compounds available for epitaxial integration and could provide additional flexibility for the development of metal–semiconductor–insulator junctions for spintronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Dial It Down: The Effect of Strongly Interacting Adsorbates on the BiAg 2 Rashba Surface State

Organic semiconductors interfaced with spin–orbit coupled materials offer a rich playground for fundamental studies of controlling spin dynamics in spintronic devices. The adsorbate–surface interactions at such interfaces play a key role in determining the valence electronic and spin structure and consequently, the device physics as well. Here we show that strong adsorbate–surface alloy interaction leads to weakening of the electronic coupling between the surface alloy atoms and quenches the spin–orbit coupled surface state, demonstrated for the case of the strong organic electron acceptor 2,7-dinitropyrene-4,5,9,10-tetrone (NO 2 –PyT, C 16 H 4 N 2 O 8 ) on the Rashba spin–orbit coupled surface alloy BiAg 2 /Ag(111). Furthermore, our findings demonstrate an important challenge associated with using molecular adsorbates to tailor the spin texture in BiAg 2 /Ag(111), and our work provides guidelines to consider while designing interfacial systems to engineer the spin texture in Rashba surface alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Anisotropic Response of Defect Bound States to the Magnetic Field in Epitaxial FeSn Films

Crystal defects, whether intrinsic or engineered, drive many fundamental phenomena and novel functionalities of quantum materials. Here, we report symmetry-breaking phenomena induced by Sn vacancy defects on the surface of epitaxial Kagome antiferromagnetic FeSn films using low-temperature scanning tunneling microscopy and spectroscopy. Near the single Sn vacancy, anisotropic quasiparticle interference patterns are observed in the differential conductance dI/dV maps, breaking the 6-fold rotational symmetry of the Kagome layer. Furthermore, the Sn vacancy defects induce bound states that exhibit anomalous Zeeman shift under an out-of-plane magnetic field, where the energy of the bound states moves linearly toward higher energy independent of the direction of the magnetic field. Under an in-plane magnetic field, the shift of the bound state energy also shows a 2-fold oscillating behavior as a function of the azimuth angle. These findings demonstrate defectenabled new functionalities in Kagome antiferromagnets for potential applications in nanoscale spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Curvature Induced Modifications of Chirality and Magnetic Configuration in Perpendicular Films

Designing curvature in three-dimensional (3D) magnetic nanostructures enables controlled manipulation of local energy landscapes, allowing for the modification of noncollinear spin textures relevant for next-generation spintronic devices. In this study, we experimentally investigate 3D magnetization textures in a Co/Pd multilayer film, exhibiting strong perpendicular magnetic anisotropy (PMA), deposited onto curved Cu nanowire meshes with diameters as small as 50 nm and lengths of several microns. Utilizing magnetic soft X-ray nanotomography, we achieve reconstructions of 3D magnetic domain patterns at approximately 30 nm spatial resolution. This approach provides detailed information on both the orientation and magnitude of magnetization within the film. Our results reveal that interfacial anisotropy in the Co/Pd multilayers drives the magnetization toward the local surface normal. In contrast to typical labyrinth domains observed in planar films, the presence of curved nanowires significantly alters the domain structure, with domains preferentially aligning along the nanowire axis in close proximity, while adopting random orientations farther away. We report direct experimental observation of a curvature-induced Dzyaloshinskii-Moriya interaction (DMI), which is quantified to be approximately one-third of the intrinsic DMI in Co/Pd stacks. The curvature induced DMI enhances stability of Néel-type domain walls. These experimental observations are further supported by micromagnetic simulations. Altogether, our findings demonstrate that introducing curvature into magnetic nanostructures provides a powerful strategy for tailoring complex magnetic behaviors, paving the way for the design of advanced 3D racetrack memory and neuromorphic computing devices.

Raftrey, David↗
DOE OSTI2026

Current-Driven Symmetry Breaking and Spin–Orbit Polarization in Chiral Wires

The spin dynamics of electrons in chiral molecular systems remains a topic of intense interest, particularly regarding whether geometric chirality inherently induces spin polarization in current-carrying electrons. In this work, we employ ab initio real-time time-dependent density functional theory (rt-TDDFT) to directly simulate the interplay among charge current, spin, and orbital. This realtime tracking extends beyond perturbative treatments, and we analyze how nonequilibrium currents effectively lift the symmetry constraints of screw rotation and time-reversal symmetry. We find that the emergence of spin and orbital angular momenta is dynamically correlated with a concomitant loss of translational (linear) momentum, which we interpret as an intrinsic consequence of current-driven symmetry lowering. The implications of this mechanism for chirality-induced spin selectivity and spintronics device design are discussed.

chiral wire↗
DOE OSTI2024

Long-distance decay-less spin transport in indirect excitons in a van der Waals heterostructure

AbstractIn addition to its fundamental interest, the long-distance spin transport is essential for spintronic devices. However, the spin relaxation caused by scattering of the particles carrying the spin limits spin transport. We explored spatially indirect excitons (IXs) in van der Waals heterostructures composed of atomically thin layers of transition-metal dichalcogenides as spin carries. We observed the long-distance spin transport: the spin polarized excitons travel over the entire sample, ~10 micron away from the excitation spot, with no spin density decay. This transport is characterized by the 1/e decay distances reaching ~100 micron. The 1/e decay distances are extracted from fits over the ~10 micron sample size. The emergence of long-distance spin transport is observed at the densities and temperatures where the IX transport decay distances and, in turn, scattering times are strongly enhanced. The suppression of IX scattering suppresses the spin relaxation and enables the long-distance spin transport.

Science & Technology - Other Topics↗
DOE OSTI2025

Tunable magnons of an antiferromagnetic Mott insulator via interfacial metal-insulator transitions

Antiferromagnetic insulators present a promising alternative to ferromagnets due to their ultrafast spin dynamics essential for low-energy terahertz spintronic device applications. Magnons, i.e., quantized spin waves capable of transmitting information through excitations, serve as a key functional element in this paradigm. However, identifying external mechanisms to effectively tune magnon properties has remained a major challenge. Here we demonstrate that interfacial metal-insulator transitions offer an effective method for controlling the magnons of Sr 2 IrO 4 , a strongly spin-orbit coupled antiferromagnetic Mott insulator. Resonant inelastic x-ray scattering experiments reveal a significant softening of zone-boundary magnon energies in Sr 2 IrO 4 films epitaxially interfaced with metallic 4 d transition-metal oxides. Therefore, the magnon dispersion of Sr 2 IrO 4 can be tuned by metal-insulator transitions of the 4 d transition-metal oxides. We tentatively attribute this non-trivial behavior to a long-range phenomenon mediated by magnon-acoustic phonon interactions. Our experimental findings introduce a strategy for controlling magnons and underscore the need for further theoretical studies to better understand the underlying microscopic interactions between magnons and phonons.

magnetic properties and materials↗
DOE OSTI2025

Spectrally sharp magnetic excitations above the critical temperature in a frustrated Weyl semimetal

The rare-earth α-pyrochlore iridates are a prospective class of conducting frustrated magnets where electronic correlations, large spin-orbit coupling, and geometrical frustration interplay, leading to a rich set of magnetic and electronic phases. Despite their intriguing properties, the magnetic order and excitations in this fundamental class of topological quantum materials remain poorly understood due to challenges in growing large single crystals and insufficient microscopic information on their temperature-dependent phases. Here, by combining state-of-the-art thin-film synthesis, resonant elastic and inelastic X-ray scattering, spin wave analysis, and dynamical spin susceptibility calculations, we unequivocally reveal the presence of spectrally sharp, gapped magnetic excitations in Y 2 Ir 2 O 7 that surprisingly persist well above the Néel transition temperature, signaling the presence of a quasi-universal regime connected to fluctuations on frustrated lattices. This finding implies the existence of a highly unusual cooperative paramagnetic (CP) phase above the ordering temperature and offers an explanation for the puzzling high-temperature magnetic behavior observed across the family of metallic pyrochlore crystals. Understanding such magnetic excitations at technologically relevant temperatures opens up possibilities for novel topological spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Unconventional magnon-mediated spin torque enabled by ferroelectric domain engineering in multiferroic BiFeO 3

Spin current provides an energy-efficient approach for manipulating magnetization, when its spin polarization aligns with the magnetization direction. However, conventional spin-source materials possess high crystalline symmetry, restricting spin polarization to be orthogonal to both spin and charge current directions. Here, we overcome this limitation by utilizing the concept of magnon-mediated spin-orbit torque through integration of the insulating multiferroic BiFeO 3 with a conventional spin-source material. We observe that spin polarization generated by conventional spin-source material can excite unconventional magnon polarization due to the interplay between cycloidal antiferromagnetic order and the ferroelectric domain structure in BiFeO 3 . This produces an unconventional magnon torque that allows deterministic, field‑free switching of in‑plane magnetization collinear with the current direction, unattainable with conventional spin-source materials. Our results establish multiferroic-based heterostructure as a symmetry‑engineered magnon spin source, paving the way for low-power spintronic devices.

Liang, Yuhan [Tsinghua Univ., Beijing (China); Cor↗
DOE OSTI2026

Tailorable multiferroic tunnel junctions from all-van der Waals multilayer stacking

Multiferroic tunnel junctions (MFTJs) represent a class of multistate, non-volatile spintronic devices, in which electron tunnelling can be manipulated by switching long-range lattice and spin orders. In contrast to conventional oxide-based MFTJs, MFTJs constructed from two-dimensional van der Waals (vdW) crystals promise minimal defect concentration in the constituents and at interfaces, which may allow for probing intrinsic tunnelling physics and the development of high-performance devices. Here, in this study, we construct Fe 3 GeTe 2 /CuInP 2 S 6 /Fe 3 GeTe 2 all-vdW MFTJs by assembling multilayer flakes of ferromagnetic Fe 3 GeTe 2 electrodes and a ferroelectric CuInP 2 S 6 spacer. These MFTJs exhibit four non-volatile resistance states featuring sizable tunnelling magnetoresistance of ∼10 2 % and tunnelling electroresistance of ∼10 4 %. To tune the properties of the vdW MFTJ, we make use of the flexibility in material choice offered by vdW heterostructure devices; we use Fe 3 GeTe 2 /Fe 5 GeTe 2 asymmetric electrodes to boost the tunnelling electroresistance by 10 3 %, we integrate In 2 Se 3 as a ferroelectric with a smaller bandgap to enhance the ON-state current density by 10 4 % to 10 4 A cm −2 and we use Fe 3 GaTe 2 electrodes to demonstrate room temperature operation. Furthermore, when we combine the asymmetric ferromagnetic electrodes with the small-bandgap ferroelectric spacer to construct Fe 3 GeTe 2 /In 2 Se 3 /Fe 5 GeTe 2 MFTJs, we simultaneously realized tunnelling electroresistance of 10 6 % and an ON-state current density of 10 4 A cm −2 , both two orders of magnitude higher than the highest values achieved with conventional oxide-based MFTJs. In the future, our all-vdW MFTJs with the tailorability of all functional layers may make it possible to investigate fundamental aspects of interlayer tunnelling and enable the design of functional magnetoelectric nanodevices.

Xie, Ti [University of Maryland, College Park, MD ↗
DOE OSTI2025

An electro-optical Mott neuron based on niobium dioxide

Various applications—including brain-like computing and on-chip artificial vision—increasingly demand a combination of electronic and photonic techniques. However, integrating both approaches on a single chip is challenging, and solutions typically rely on disparate components with power-hungry signal conversions. Here, in this paper, we report electro-optical Mott neurons that combine visible light emission with electrical threshold switching, as well as neuron-like oscillations. The devices are based on thin films of sputtered niobium dioxide (NbO 2 ), a Mott insulator–metal transition material, operating at room temperature and emitting light that peaks around 810 nm. Operando measurements reveal an electronic origin to the light emission: charge carrier relaxation initiated by high-field transport in the NbO 2 . Our devices combine electrical and optical functions within a single material, thereby expanding the options available for future artificial intelligence hardware.

electrical engineering↗
DOE OSTI2024

Evidence of antiferromagnetism in ultrathin metallic (111)-oriented LaNiO 3 films

Antiferromagnets with exotic spin textures promise low-power spintronic devices with extremely high operating frequencies and resistance to external perturbations. In particular, the combination of highly tunable correlated electron physics, as in complex oxides, with metallicity and antiferromagnetism is desirable but exceedingly rare. LaNiO 3 , the lone example of a perovskite nickelate which is metallic across all temperatures, has long been a promising candidate, but the antiferromagnetic metallic state has remained elusive. Here, we demonstrate the emergence of this state in ultrathin films of (111)-oriented LaNiO 3 using a combination of polarized neutron reflectometry, low-energy muon spectroscopy and anomalous Hall effect measurements, and density functional theory calculations with a Hubbard U term. Further, we find a highly strained symmetry-breaking interfacial region which may support canting of the AFM moments leading to a vanishingly small net magnetization at the film-substrate interface, providing a convenient route toward control of the Néel order. Evidence of antiferromagnetic metallic behavior in (111)LNO films highlights the role of crystal symmetry in tuning the novel quantum states in complex oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Structural inversion asymmetry in epitaxial ultrathin films of Bi(111)/InSb(111)B

Bismuth (Bi) films hold potential for spintronic devices due to strong spin-orbit coupling. Understanding the growth, surface states, and interactions with the substrate is key to their functionalization. Large-area high-quality (111) Bi ultrathin films were grown on InSb (111)B substrates by molecular beam epitaxy (MBE). Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to nonequivalent interface potentials. Analysis of angle-resolved photoemission spectroscopy (ARPES) measurements, employed to characterize the evolution of the surface states with film thickness, indicate a crossing at the $\overline{M}$ point, suggesting a topologically trivial phase in the thin film. In conclusion, the results show the presence of interfacial bonds to the substrate breaks inversion symmetry, preventing the semimetal-to-semiconductor transition predicted for freestanding bismuth layers, highlighting the importance of controlled functionalization and surface passivation of two-dimensional materials.

Inbar, Hadass S. [Univ. of California, Santa Barba↗
DOE OSTI2026

Magnetoelectric properties at the Co/AlN(0001) interface

AlN nitride is a large-band-gap polar material that has gained interest due to its ability to become ferroelectric and its compatibility with Si- and GaN-based technologies. This compound could, therefore, be a good candidate to design new artificial multiferroics if combined with a ferromagnetic electrode. For this work, we performed first-principles calculations to investigate the set up of the magnetoelectric coupling at the Co/AlN(0001) interface. Our results describe a complex interfacial atomic structure with variable local magnetic properties as a function of the atom alignment. We predict an average variation of interface spin magnetization, when the polarization is reversed, of 3.83 𝜇B nm −2 , close to the values already reported in the literature at metal/oxide interfaces. This confirms the potential of this AlN-based ferroelectric compound to be used in future voltage-controlled spintronic devices.

36 MATERIALS SCIENCE↗