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At least 55 records · Page 3

The effect of the low Earth orbit environment on space solar cells: Results of the Advanced Photovoltaic Experiment (S0014)

The results of post-flight performance testing of the solar cells flown on the Advanced Photovoltaic Experiment are reported. Comparison of post-flight current-voltage characteristics with similar pre-flight data revealed little or no change in solar cell conversion efficiency, confirming the reliability and endurance of space photovoltaic cells. This finding is in agreement with the lack of significant physical changes in the solar cells despite nearly six years in the low Earth orbit environment.

Brinker, David J.

Space solar cell technology development - A perspective

The developmental history of photovoltaics is examined as a basis for predicting further advances to the year 2000. Transistor technology was the precursor of solar cell development. Terrestrial cells were modified for space through changes in geometry and size, as well as the use of Ag-Ti contacts and manufacture of a p-type base. The violet cell was produced for Comsat, and involved shallow junctions, new contacts, and an enhanced antireflection coating for better radiation tolerance. The driving force was the desire by private companies to reduce cost and weight for commercial satellite power supplies. Liquid phase epitaxial (LPE) GaAs cells are the latest advancement, having a 4 sq cm area and increased efficiency. GaAs cells are expected to be flight ready in the 1980s. Testing is still necessary to verify production techniques and the resistance to electron and photon damage. Research will continue in CVD cell technology, new panel technology, and ultrathin Si cells.

Scott-Monck, J.

Predicted performance of near-optimally designed indium phosphide space solar cells at high intensities and temperatures

The authors calculated the expected performance dependence of near-optimally designed shallow homojunction n+pp+ InP solar cells on incident intensities up to 200 AM0 and temperatures up to 100 deg C (373 K). Both circular and rectangular cells were considered, the former for use in a Cassegrainian concentrator array at 100 AM0, 80-100 deg C and the latter for use in a Slats concentrator array at 20 AM0, 80-100 deg C. With efficiencies near 22 percent at 80 deg C, both the circular and rectangular InP shallow homojunction solar cells compare very favorably to GaAs cells of the same design and may be preferable to the GaAs cells for space applications because of the superior radiation tolerance of the InP cells.

Goradia, Chandra

Space Solar Cell Research and Development Projects at Emcore Photovoltaics

The GaInP2/InGaAs/Ge triple junction device lattice matched to germanium has achieved the highest power conversion efficiency and the most commercial success for space applications [1]. What are the practical performance limits of this technology? In this paper we will describe what we consider to be the practical performance limits of the lattice matched GaInP2/InGaAs/Ge triple junction cell. In addition, we discuss the options for next generation space cell performance.

Sharps, Paul

Insights into Space Solar Cell Durability Using SPICE Simulation Seeded by Current-Voltage Characteristics Parametrized Using the Lambert W Special Function

We developed and validated an automated routine for the fitting of I-V curve data to the single diode model according to an exact analytical solution. Our fitting routine was validated to show good noise immunity and high accuracy usingsimulated values from LTSPICE. We are thus able to automate parameter extraction from a dataset or arbitrary size. This parameterization allows for better simulation of performance of real cells and arrays and provides utility for a host of applications relevant to space arrays. We will use this methodology to determine the array performance of radiated cells over time, and simulate the performance of the arrays with bypass diodes and power electronics.

Solar Cell

Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

Spitzer, M. B.

Space solar cells - High efficiency and radiation damage

The proceedings of the Third Solar Cell High Efficiency and Radiation Damage Meeting are outlined. The topics covered included high efficiency silicon solar cells, silicon solar cell radiation damage, GaAs solar cell performance, and 30 percent conversion devices. The study of radiation damage from a fundamental defect-centered basis is discussed and evaluated as a focus of future work. 18% AM0 efficiency and 0.7 V open-circuit voltages are designated as achievable goals for silicon solar cells, and the potential for 30% AM0 efficiencies from monolithic tandem cell designs without sunlight concentration is noted. In addition to its potential for 20% AM0 efficiencies, the GaAs cell offers the possibility of a radiation-insensitive power supply when operated at temperatures near 200 C.

Brandhorst, H. W., Jr.

Development of a large area space solar cell assembly

The development of a large area high efficiency solar cell assembly is described. The assembly consists of an ion implanted silicon solar cell and glass cover. The important attributes of fabrication are the use of a back surface field which is compatible with a back surface reflector, and integration of coverglass application and cell fabrications. Cell development experiments concerned optimization of ion implantation processing of 2 ohm-cm boron-doped silicon. Process parameters were selected based on these experiments and cells with area of 34.3 sq cm wre fabricated. The average AMO efficiency of the twenty-five best cells was 13.9% and the best bell had an efficiency of 14.4%. An important innovation in cell encapsulation was also developed. In this technique, the coverglass is applied before the cell is sawed to final size. The coverglass and cell are then sawed as a unit. In this way, the cost of the coverglass is reduced, since the tolerance on glass size is relaxed, and costly coverglass/cell alignment procedures are eliminated. Adhesive investigated were EVA, FEP-Teflon sheet and DC 93-500. Details of processing and results are reported.

Spitzer, M. B.

Large area, low cost space solar cells with optional wraparound contacts

Design parameters for two large area, low cost solar cells are presented, and electron irradiation testing, thermal alpha testing, and cell processing are discussed. The devices are a 2 ohm-cm base resistivity silicon cell with an evaporated aluminum reflector produced in a dielectric wraparound cell, and a 10 ohm-cm silicon cell with the BSF/BSR combination and a conventional contact system. Both cells are 5.9 x 5.9 cm and require 200 micron thick silicon material due to mission weight constraints. Normalized values for open circuit voltage, short circuit current, and maximum power calculations derived from electron radiation testing are given. In addition, thermal alpha testing values of absorptivity and emittance are included. A pilot cell processing run produced cells averaging 14.4% efficiencies at AMO 28 C. Manufacturing for such cells will be on a mechanized process line, and the area of coverslide application technology must be considered in order to achieve cost effective production.

Michaels, D.

Basis for equivalent fluence concept in space solar cells

The equivalent fluence concept is defined, and its use and potential problems are noted. Silicon and GaAs solar cells are compared in a radiation environment. The analysis indicates that valid equivalent fluence values may be easier to obtain in GaAs than in silicon.

Meulenberg, A.

Comparative values of advanced space solar cells

A methodology for deriving a first order dollar value estimate for advanced solar cells which consists of defining scenarios for solar array production and launch to orbit and the associated costs for typical spacecraft, determining that portion affected by cell design and performance and determining the attributable cost differences is presented. Break even values are calculated for a variety of cells; confirming that efficiency and related effects of radiation resistance and temperature coefficient are major factors; array tare mass, packaging and packing factor are important; but cell mass is of lesser significance. Associated dollar values provide a means of comparison.

Slifer, L. W., Jr.

Growth and characterization of Czochralski-grown n and p-type GaAs for space solar cell substrates

Progress in LEC (liquid encapsulated Czochralski) crystal growth techniques for producing high-quality, 3-inch-diameter, n- and p-type GaAs crystals suitable for solar cell applications is described. The LEC crystals with low dislocation densities and background impurities, high electrical mobilities, good dopant uniformity, and long diffusion lengths were reproducibly grown through control of the material synthesis, growth and doping conditions. The capability for producing these large-area, high-quality substrates should positively impact the manufacturability of highly efficiency, low cost, radiation-hard GaAs solar cells.

Chen, R. T.

Optimal design of GaAs-based concentrator space solar cells for 100 AMO, 80 deg C operation

Using a detailed computer code and reasonable values of electrical and optical material parameters from current published literature, parameter optimization studies were performed on three configurations of GaAs-based concentrator solar cells for 100 AMO, 80 C operation. These studies show the possibility of designing GaAs-based solar cells with efficiencies exceeding 22% at 100 AMO 80 C and probable efficiency degradation of less than 15% after a 70% reduction in diffusion length in each cell region.

Goradia, C.

A verified technique for calibrating space solar cells

Solar cells have been flown on high-altitude balloons for over 24 years, to produce solar cell standards that can be used to set the intensity of solar simulators. The events of a typical balloon calibration flight are reported. These are: the preflight events, including the preflight cell measurements and the assembly of the flight cells onto the solar tracker; the activities at the National Scientific Balloon Facility in Palestine, Texas, including the preflight calibrations, the mating of the tracker and cells onto the balloon, preparations for launch, and the launch; the payload recovery, which includes tracking the balloon by aircraft, terminating the flight, and retrieving the payload. In 1985, the cells flow on the balloon were also flown on a shuttle flight and measured independently. The two measurement methods are compared and shown to agree within 1 percent.

Anspaugh, Bruce

Modelling and design of high efficiency radiation tolerant indium phosphide space solar cells

Using a fairly comprehensive model, a parametric variation study was performed of the InP shallow homojunction solar cell with a view to determining the maximum realistically achievable efficiency and an optimum design that would yield this efficiency. Calculations show that with good-quality epitaxial material, a beginning-of-life efficiency of about 20.3 precent at 1AM0, 25 C may be possible. The design parameters of the near-optimum cell are given. Also presented are the expected effect on the performance parameters of radiation damage by 1-MeV electrons and a possible explanation of the high radiation tolerance of InP solar cells.

Goradia, Chandra

Monolithic and mechanical multijunction space solar cells

Monolithic and mechanically stacked tandem solar cells have been fabricated with encouraging AM0 efficiencies summarized as: monolithic GaAs/Ge: 19.1 percent (28 C, 4 sq cm); monolithic InP/Ga0.47In0.53As: 22.2 percent (25 C, 0.296 sq cm); monolithic AlGaAs/GaAs/InGaAs: 27.6 percent (80 C, 0.2 sq cm, 100 X); mechanically stacked GaAs/GaSb: 30.8 percent (25 C, 0.049 sq cm, 100 X); and mechanically stacked GaAs/CuInSe2: 23.1 percent (25 C, 4 sq cm). Significant improvement in tandem cell efficiencies nearing to theoretical predictions has been projected with the improvement in cell material quality and processing. Thin-film cells offer improved specific power. It is pointed out that both the monolithic and mechanically stacked cells have their own problems as to size, processing, current-voltage matching, weight, etc. More information is needed on the effect of temperature and radiation on the cell performance. Proper reference cells and full spectrum range simulators are required to measure efficiencies correctly.

Jain, Raj K.

A review of indium phosphide space solar cell fabrication technology

A review of the status of InP cell efficiency and of approaches to the reduction of cell cost is presented. The use of heteroepitaxial techniques such as InP-on-GaAs and InP-on-Si is discussed along with the use of chemical and mechanical techniques for removal and recovery of the substrate. The efficiency ultimately obtainable with designs made possible by such an approach is calculated.

Spitzer, M. B.