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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Analogy between fluid cavitation and fracture mechanics

When the stresses imposed on a fluid are sufficiently large, rupture or cavitation can occur. Such conditions can exist in many two-phase flow applications, such as the choked flows, which can occur in seals and bearings. Nonspherical bubbles with large aspect ratios have been observed in fluids under rapid acceleration and high shear fields. These bubbles are geometrically similar to fracture surface patterns (Griffith crack model) existing in solids. Analogies between crack growth in solid and fluid cavitation are proposed and supported by analysis and observation (photographs). Healing phenomena (void condensation), well accepted in fluid mechanics, have been observed in some polymers and hypothesized in solid mechanics. By drawing on the strengths of the theories of solid mechanics and cavitation, a more complete unified theory can be developed.

Hendricks, R. C.↗
NASA NTRS1989

Modelling melt-solid interfaces in Bridgman growth

Doped epoxy models with abrupt interfaces were prepared to test radiographic and computer enhancement procedures used to study the images of melt-solid interfaces during crystal growth in Bridgman furnaces. A column averaging procedure resulted in improved images that faithfully reproduced the positions and shapes of interfaces even at very low density differences. These techniques were applied to lead tin telluride growing in Bridgman furnaces.

Barber, Patrick G.↗
NASA NTRS2001

The Science of Detached Bridgman Growth and Solutocapillary Convection in Solid Solution Crystals

Bridgman and Float-zone crystal growth experiments are planned for NASA's First Materials Science Research Rack using the European Space Agency's Materials Science Laboratory with the Low Gradient Furnace (LGF) and Float Zone Furnace with Rotating Magnetic Field (FMF) inserts, respectively. Samples will include germanium and germanium-silicon alloys with up to 10 atomic percent silicon. The Bridgman part of the investigation includes detached growth samples and so there will be a solid-liquid-gas tri-junction in those experiments just as there will be in all float-zone experiments. There are other similarities as well as significant differences between the types of growth that will be discussed. The presentation will call attention to the reasons that experiments in microgravity will provide information unattainable from Earth-based experiments.

Szofran, F. R.↗
NASA NTRS1987

Material growth and characterization for solid state devices

During this period InGaAs and InGaAsP were grown on (100)InP by liquid phase electroepitaxy (LPEE). Results of the epitaxial growth of InGaAs on sputtered quartz masked substrates are presented. The resulting surface morphology can be related to the current density distribution near the edges of a masked pattern. The quaternary InGaAs was grown with compositions corresponding to 1.3 micron and 1.5 micron emission wavelengths. Growth rates were found to be linearly dependent upon current density, and a strong dependence upon composition was noted. These compositions lie in the miscibility gap region of the alloy phase diagram at the 645 C growth temperature. Growths were performed at 685 C to avoid the miscibility gap. Epilayers were characterized by photoluminescence, X-ray diffraction, secondary ion mass spectrometry, and Hall effect measurements. Aluminum oxide was deposited on silicon and InGaAs substrates for the characterization of this material as an insulator in a field effect transistor structure. It was determined that the results did not warrant further work with the deposition from an aluminum isopropoxide source. A metallographic vapor phase epitaxy system installation is nearing completion for use in hybrid III-V semiconductor epilayer growths.

Collis, Ward J.↗
NASA NTRS1988

Material growth and characterization for solid state devices

During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used to grow ternary and quaternary alloy III-V semiconductor thin films. Selective area growth of InGaAs was performed on InP substrates using a patterned sputtered quartz or spin-on glass layer. The etch back and growth characteristics with respect to substrate orientation were investigated. The etch back behavior is somewhat different from wet chemical etching with respect to the sidewall profiles which are observed. LPEE was also employed to grow epitaxial layers of InGaAsP alloys on InP substrates. The behavior of Mn as an acceptor dopant was investigated with low temperature Hall coefficient and photoluminescence measurements. A metal-organic vapor phase epitaxy system was partially complete within the grant period. This atmospheric pressure system will be used to deposit III-V compound and alloy semiconductor layers in future research efforts.

Collis, Ward J.↗
NASA NTRS1984

Material growth and characterization for solid state devices

Manganese was used as the dopant for p-type InGaAs layers grown on semi-insulating (Fe-doped) and n-type (Sn-doped) InP substrates. Optical, electrical (Hall) and SIMS measurements were used to characterize the layers. Mn-diffusion into the substrate (during the growth of In GaAs) was observed only when Fe-doped substrates were used. Quaternary layers of two compositions corresponding to wavelengths (energy gaps) of approximated 1.52 micrometers were successfully grown at a constant temperature of 640 C and InP was grown in the temperature range of 640 C to 655 C. A study of the effect of pulses on the growth velocity of InP indicated no significant change as long as the average applied current was kept constant. A system for depositing films of Al2O3 by the pyrolysis of aluminum isopropoxide was designed and built. Deposited layers on Si were characterized with an ellipsometer and exhibited indices of refraction between 1.582 and 1.622 for films on the order of 3000 A thick. Undoped and p-type (Mn-doped) InGaAs epitaxial layers were also grown on Fe-doped InP substrates through windows in sputtered SiO2 (3200 A thick) layers.

Stefanakos, E. K.↗
NASA NTRS1983

Scientific results from the materials processing in space program

Scientific experiments conducted in a low-gravity environment make it possible to study effects, such as surface tension-driven flows, which are often masked by buoyancy-driven flows. A summary is provided of several early experiments which demonstrate that unwanted convective flows can be effectively suppressed in experiments conducted in orbiting spacecraft. Possible applications of low-G processing are discussed, taking into account Bridgman growth of solid solution alloy-type semiconductors, Bridgman growth of eutectic systems, and float-zone crystal growth. The control of macrosegregation and phase separation in castings is considered, giving attention also to containerless melting and solidification. A description of experiment facilities and opportunities is provided.

Naumann, R.↗
NASA NTRS2004

Fast, Repeatable Clumping of Solid Particles in Microgravity

A crucial step in planet formation is the growth of solid bodies in the sub-millimeter to meter size range: too large to condense directly from the gas phase and too small to interact meaningfully through mutual gravitation. The existence of planets in our solar system demands that some growth process once operated in that size regime, but the mechanism has not been positively identified. Whatever it was, it worked despite nebular turbulence that was probably strong enough to break dust structures cohering by weak surface forces and to disrupt small-scale gravitational collapse via the Goldreich-Ward mechanism. Recent work on this topic, reviewed in, has focussed on ice and frost in the laboratory, silicate dust in drop-tower and orbital microgravity environments, and numerically modelled magnetic particles.

Kive, S. G.↗
NASA NTRS1982

III-V semiconductor solid solution single crystal growth

The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.

Gertner, E. R.↗
NASA NTRS1984

Material growth and characterization for solid state devices

During the reporting period, InGaAs was grown on Fe-doped (semi-insulating) (100) InP substrates by current controlled liquid phase epitaxy (CCLPE) at 640 C and current densities of 2.5A sq/cm to 5 A/sq cm for periods from 5 to 30 minutes. Special efforts were made to reduce the background carrier concentration in the grown layers as much as possible. The best layers exhibited carrier concentrations in the mid-10 to the 15th power/cu cm range and up to 10,900 sq cm/V-sec room temperature mobility. InGaAsP quaternary layers of energy gap corresponding to wavelengths of approximately 1.5 microns and 1.3 microns were grown on (100) InP substrates by CCLPE. In the device fabrication area, work was directed toward processing MISFET's using InGaAs. SiO2, Si3N4 and Al2O3 were deposited by ion beam sputtering, electron beam evaporation and chemical vapor reaction on Si, GaAs, and InGaAs substrates. SiO2 and Si3N4 sputtered layers were found to possess a high density of pinhole defects that precluded capacitance-voltage analysis. Chemical vapor deposited Al2O3 layers on Si, GaAs and InGaAs substrates also exhibited a large number of pinhole defects. This prevented achieving good MIS devices over most of the substrate surface area.

Stefanakos, E. K.↗
NASA NTRS1992

Applications for special-purpose minerals at a lunar base

Maintaining a colony on the Moon will require the use of lunar resources to reduce the number of launches necessary to transport goods from the Earth. It may be possible to alter lunar materials to produce minerals or other materials that can be used for applications in life support systems at a lunar base. For example, mild hydrothermal alteration of lunar basaltic glasses can produce special-purpose minerals (e.g., zeolites, smectites, and tobermorites) that in turn may be used in life support, construction, waste renovation, and chemical processes. Zeolites, smectites, and tobermorites have a number of potential applications at a lunar base. Zeolites are hydrated aluminosilicates of alkali and alkaline earth cations that possess infinite, three-dimensional crystal structures. They are further characterized by an ability to hydrate and dehydrate reversibly and to exchange some of their constituent cations, both without major change of structure. Based on their unique absorption, cation exchange, molecular sieving, and catalytic properties, zeolites may be used as a solid support medium for the growth of plants, as an adsorption medium for separation of various gases (e.g., N2 from O2), as catalysts, as molecular sieves, and as a cation exchanger in sewage-effluent treatment, in radioactive waste disposal, and in pollution control. Smectites are crystalline, hydrated 2:1 layered aluminosilicates that also have the ability to exchange some of their constituent cations. Like zeolites, smectites may be used as an adsorption medium for waste renovation, as adsorption sites for important essential plant growth cations in solid support plant growth mediums (i.e., 'soils'), as cation exchangers, and in other important application. Tobermorites are cystalline, hydrated single-chained layered silicates that have cation-exchange and selectivity properties between those of smectites and most zeolites. Tobermorites may be used as a cement in building lunar base structures, as catalysts, as media for nuclear and hazardous waste disposal, as exchange media for waste-water treatment, and in other potential applications. Special-purpose minerals synthesized at a lunar base may also have important applications at a space station and for other planetary missions. New technologies will be required at a lunar base to develop life support systems that are self-sufficient, and the use of special-purpose minerals may help achieve this self-sufficiency.

Ming, Douglas W.↗
DOE OSTI2024

Failure Process During Fast Charging of Lithium Metal Batteries with Weakly Solvating Fluoroether Electrolytes

While improving the lithium metal (Li) Coulombic efficiency has been a focus for electrolyte design, the performance under high current densities is less studied yet highly relevant for practical applications. Here, we evaluate the charge-rate-dependent cycling stability using three types of weakly solvating fluoroether electrolytes. Although good cycle life was achieved in all three electrolytes under low current densities, they all exhibited a soft shorting behavior above various threshold current densities (between 2 and 5.2 mA cm –2 ). In this study, we attributed the current-dependent electrode morphology to both Li growth and residual solid electrolyte interface (rSEI) growth processes. In early cycles, Li morphology guided the formation of rSEI structures. In later cycles, the rSEI structure partially impacted Li growth. Under low current densities, the rSEI was inhomogeneous with large voids for subsequent bulky lithium growth. Under high current densities, the rSEI became more dense, which aggravated the high-surface/volume-ratio Li growth through and on the top of the rSEI. Among the three weakly solvating fluoroether electrolytes, the ones with lower ionic conductivity were observed to short within fewer cycles and at lower charge current densities. Our work suggests that fast ion transport in electrolytes may be a desirable feature for the stable operation at >1C charging in high-energy-density lithium metal batteries.

25 ENERGY STORAGE↗
NASA NTRS1999

Magnetic Damping of Solid Solution Semiconductor Alloys

The objective of this study is to: (1) experimentally test the validity of the modeling predictions applicable to the magnetic damping of convective flows in electrically conductive melts as this applies to the bulk growth of solid solution semiconducting materials; and (2) assess the effectiveness of steady magnetic fields in reducing the fluid flows occurring in these materials during processing. To achieve the objectives of this investigation, we are carrying out a comprehensive program in the Bridgman and floating-zone configurations using the solid solution alloy system Ge-Si. This alloy system has been studied extensively in environments that have not simultaneously included both low gravity and an applied magnetic field. Also, all compositions have a high electrical conductivity, and the materials parameters permit reasonable growth rates. An important supporting investigation is determining the role, if any, that thermoelectromagnetic convection (TEMC) plays during growth of these materials in a magnetic field. TEMC has significant implications for the deployment of a Magnetic Damping Furnace in space. This effect will be especially important in solid solutions where the growth interface is, in general, neither isothermal nor isoconcentrational. It could be important in single melting point materials, also, if faceting takes place producing a non-isothermal interface. In conclusion, magnetic fields up to 5 Tesla are sufficient to eliminate time-dependent convection in silicon floating zones and possibly Bridgman growth of Ge-Si alloys. In both cases, steady convection appears to be more significant for mass transport than diffusion, even at 5 Tesla in the geometries used here. These results are corroborated in both growth configurations by calculations.

Szofran, Frank R.↗
NASA NTRS1990

Temperature and melt solid interface control during crystal growth

Findings on the adaptive control of a transparent Bridgman crystal growth furnace are summarized. The task of the process controller is to establish a user specified axial temperature profile by controlling the temperatures in eight heating zones. The furnace controller is built around a computer. Adaptive PID (Proportional Integral Derivative) and Pole Placement control algorithms are applied. The need for adaptive controller stems from the fact that the zone dynamics changes with respect to time. The controller was tested extensively on the Lead Bromide crystal growth. Several different temperature profiles and ampoule's translational rates are tried. The feasibility of solid liquid interface quantification by image processing was determined. The interface is observed by a color video camera and the image data file is processed to determine if the interface is flat, convex or concave.

Batur, Celal↗
NASA NTRS1998

Magnetic Damping of Solid Solution Semiconductor Alloys

The objective of this study is to conduct the Earth-based research sufficient to successfully propose a flight experiment (1) to experimentally test the validity of the modeling predictions applicable to the magnetic damping of convective flows in conductive melts as this applies to the bulk growth of solid solution semiconducting materials in the reduced gravitational levels available in low Earth orbit and (2) to assess the effectiveness of steady magnetic fields in reducing the fluid flows occurring in these materials during space processing. To achieve the objectives of this investigation, we are carrying out a comprehensive program in the Bridgman and floating-zone configurations using the solid solution alloy system Ge-Si. This alloy system was chosen because it has been studied extensively in environments that have not simultaneously included both low gravity and an applied magnetic field. Also, all compositions have a high electrical conductivity, and the materials parameters permit high growth rates compared to many other commonly studied alloy semiconductors. An important supporting investigation is determining the role, if any, that thermoelectromagnetic convection (TEMC) plays during growth of these materials in a magnetic field. Some compositional anomalies observed by us in magnetic grown crystals can only be explained by TEMC; this has significant implications for the deployment of a Magnetic Damping Furnace in space. This effect will be especially important in solid solutions where the growth interface is, in general, neither isothermal nor isoconcentrational. It could be important in single melting point materials, also, if faceting takes place producing a non-isothermal interface.

Szofran, Frank R.↗