MultiSolSegment: EL images and masks
This dataset was used to train MultiSolSegment, a multi-channel segmentation model for photovoltaic defect detection.
14 SOLAR ENERGY↗
SEARCH · Engineering Papers
Results for “solar cell defects”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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MultiSolSegment: Trained Model Weights
The resulting model weights for MultiSolSegment to be loaded into the python code for other to use.
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pvcracks: trained VAE model
The resulting model weights for the variational autoencoder for solar cell crack parametrization to be loaded into the python code for other to use
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Effects of thermal annealing on the deep-level defects and I-V characteristics of 200 keV proton irradiated AlGaAs-GaAs solar cells
Detailed characterization of deep-level defects and analysis of dark I-V data in 200 keV proton irradiated AlGaAs-GaAs solar cells have been carried out for several proton fluences (5 x 10 to the 11th, 10 to the 12th, and 10 to the 13th P/sq cm), using DLTS, C-V, and I-V measurement techniques. To study the effect of low temperature thermal annealing on the deep-level defect properties, these irradiated samples were annealed in vacuum at 300 C for one hour. Comparison was then made on the measured defect parameters (i.e., defect energy levels and densities) and the dark I-V characteristics for both the annealed and unannealed samples.
Li, S. S.↗
Toward Quality Control in Perovskite Solar Cell Fabrication: Spot-Like Processing Defects Disrupt Charge Transport Layers and Promote Ag Metal Electrode Intrusion
Metal halide perovskite (MHP) photovoltaics provide high efficiencies with less stringent processing requirements than traditional photovoltaic materials. However, processing related defects must be suppressed as they can lead to decreases in initial device efficiency and potentially compromise long-term device operation. In this work we investigate morphological defects in MHP devices using luminescence imaging followed by in-depth structural and composition analysis using electron microscopy-based methods. We identify several different classes of spot-like processing-related defects and observe that a single device structure may contain multiple types of these defects. The presence of these defects in devices with different layer structures and absorber chemistries makes them relevant to the perovskite photovoltaic community as a whole. The defects are associated with voids in the perovskite layer, inclusions (glass, migrated Ag, dust), thickness variations, hole transport layer disruption with anomalous crystal growth, and electron transport layer disruptions that could allow Ag intrusion and lead to local shunts. As perovskite photovoltaic technology matures, mitigation of such defects is critical to improving not only initial performance but also the long-term stability required for industrial applications.
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A study of irradiation-induced defects in silicon using low temperature photoluminescence
Irradiation-induced defects in silicon, using low temperature photoluminescence as a probe of defect properties were investigated. The goal of this research was to gain new understanding of defects which degrade solar cell characteristics in a radiation environment. In this regard, an important aspect of this program was a study of radiation damage and annealing in lithium doped silicon, which is useful in reducing solar cell degradation. Luminescence was used to study defects because this property reveals electron transitions through a number of defect energy levels at any given annealing stage; the luminescence spectra give excellent resolution of many defect energy levels, and these measurements can be used to give defect symmetry in the lattice, impurity dependence, and annealing properties.
Streetman, B. G.↗
Origin of reverse annealing in radiation-damaged silicon solar cells
The paper employs relative defect concentrations, energy levels, capture cross sections, and minority carrier diffusion lengths in order to identify the defect responsible for the reverse annealing observed in a radiation damaged n(+)/p silicon solar cell. It is reported that the responsible defect, with the energy level at +0.30 eV, has been tentatively identified as boron-oxygen-vacancy complex. In conclusion, it is shown that removal of this defect could result in significant cell recovery when annealing at temperatures well below the currently required 400 C.
Weinberg, I.↗
Radiation damage in lithium-containing solar cells Final report, 21 Jun. 1966 - 20 Mar. 1968
Interaction of lithium with defects induced in silicon solar cells by one MeV electron bombardment
Brucker, G. J.↗
Cell performance and defect behavior in proton-irradiated lithium-counterdoped n(+)p silicon solar cells
Lithium-counterdoped n(+)p silicon solar cells were irradiated by 10-MeV protons, and their performance was determined as a function of fluence. It was found that the cell with the highest lithium concentration exhibited the higher radiation resistance. Deep-level transient spectroscopy studies of deep-level defects were used to identify two lithium-related defects. Defect energy levels obtained after the present 10-MeV irradiations were found to be markedly different than those observed after previous 1-MeV electron irradiations. However, the present DLTS data are consistent with previous suggestion by Weinberg et al. (1984) of a lithium-oxygen interaction which tends to inhibit formation of an interstitial boron-oxygen defect.
Weinberg, I.↗
Laser annealing of amorphous/poly: Silicon solar cell material flight experiment
The preliminary design proposed for the microelectronics materials processing equipment is presented. An overall mission profile, description of all processing steps, analysis methods and measurement techniques, data acquisition and storage, and a preview of the experimental hardware are included. The goal of the project is to investigate the viability of material processing of semiconductor microelectronics materials in a micro-gravity environment. The two key processes are examined: (1) Rapid Thermal Annealing (RTA) of semiconductor thin films and damaged solar cells, and (2) thin film deposition using a filament evaporator. The RTA process will be used to obtain higher quality crystalline properties from amorphous/poly-silicon films. RTA methods can also be used to repair radiation-damaged solar cells. On earth this technique is commonly used to anneal semiconductor films after ion-implantation. The damage to the crystal lattice is similar to the defects found in solar cells which have been exposed to high-energy particle bombardment.
Cole, Eric E.↗
Radiation effects in silicon solar cells Quarterly progress report, 1 Jul. - 30 Sep. 1970
Defects responsible for degradation in output of silicon solar cells irradiated by space radiation
Berger, R. A.↗
Electrochemical Characterization of InP and GaAs Based Structures for Space Solar Cell Applications.
In this paper the emphasis is on accurate majority carrier concentration EC-V profiling of structures based on Indium Phosphide and Gallium Arsenide, using a newly developed electrolyte based on Hydrogen Flouride, Acetic Acid, Phosphoric Acid, 1-phenyl-2-propanamine and Ammonia Diflouride. Some preliminary data on the use of this electrolyte for determining the energy distribution of surface and deep states of these structures, applicable to fabrication process optimization and radiation induced defects studies of solar cells, are also provided.
Faur, Maria↗
Characterization of dangling bond defects at the crystalline Si/SiO x interface in a polycrystalline Si passivating contact solar cell at room temperature with electrically detected magnetic resonance spectroscopy
Monocrystalline silicon solar cells can achieve photoconversion efficiencies exceeding 26%; however, performance-limiting defects that trap carriers continue to be a challenge. In this work, we have characterized Si solar cells with tunneling SiO x /polycrystalline-Si (poly-Si) passivating contacts (TOPCon) on As-doped Czochralski Si wafers with electrically detected magnetic resonance (EDMR) spectroscopy. We fabricated 2 × 20 mm 2 TOPCon-like mini solar cells with edge passivation alongside larger 4 cm 2 sister cells and obtained similar device characteristics. We performed EDMR spectroscopy at 300 K on two minicells with different degrees of surface passivation based on the recombination parameter, J o , values of 40 and 310 fA/cm2. We optimized the resolution and the signal-to-noise ratio of the EDMR response of the minicells by varying the forward bias voltage and the magnetic field modulation amplitude. We detect two distinct signals with EDMR spectroscopy, an axial-like signal at g = 2.009, 2.0087, and 2.0015, and an isotropic signal at g = 2.0024, which we attribute to Si dangling bonds (P b0 and P b centers) and boron–oxygen related defects, respectively, at or near the c-Si/SiO x interface. The EDMR signals were lower for the cell with a lower value of J o , while the ratio of the two defect populations was very similar. The EDMR signal increases with forward bias but drops to zero at bias voltages >0.5 V, consistent with interface defects within or near the boron-doped emitter depletion region. Our study demonstrates a method to fabricate minicells that can be characterized with EDMR spectroscopy to detect industrially relevant defects in TOPCon cells.
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Ionic liquids improve the long-term stability of perovskite solar cells
Achieving operational stability in halide perovskite solar cells remains a critical challenge for commercialization. Ionic liquids are promising bulk modifiers, yet their mechanistic role in perovskite crystallization is poorly understood. Here we engineered an ionic liquid, methoxyethoxymethyl-1-methylimidazole chloride (MEM-MIM-Cl), with an ethylene glycol ether side chain that regulates perovskite growth and stabilizes buried interfaces via synergistic interactions with NiO x . MEM-MIM-Cl induces a novel intermediate phase through chelation with undercoordinated Pb(II), suppressing defects and defect-induced degradation. Solar cells incorporating MEM-MIM-Cl achieved a power conversion efficiency of 25.9% and retained 90% of their initial performance after 1,500 h under continuous 1-sun illumination and 90 °C thermal stress—surpassing prior benchmarks under milder ageing conditions. Furthermore, diurnal cyclic ageing revealed unprecedented fatigue resistance, highlighting the dual role of MEM-MIM-Cl in simultaneously enhancing efficiency and operational resilience. In conclusion, this work elucidates design principles for functional ionic liquids while advancing perovskite photovoltaics towards industrial viability.
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Effects of low temperature periodic annealing on the deep-level defects in 200 keV proton irradiated AlGaAs-GaAs solar cells
The GaAs solar cell has shown good potential for space applications. However, degradation in performance occurred when the cells were irradiated by high energy electrons and protons in the space environment. The considered investigation is concerned with the effect of periodic thermal annealing on the deep-level defects induced by the 200 keV protons in the AlGaAs-GaAs solar cells. Protons at a fluence of 10 to the 11th P/sq cm were used in the irradiation cycle, while annealing temperatures of 200 C (for 24 hours), 300 C (six hours), and 400 C (six hours) were employed. The most likely candidate for the E(c) -0.71 eV electron trap observed in the 200 keV proton irradiated samples may be due to GaAs antisite, while the observed E(v) +0.18 eV hole trap has been attributed to the gallium vacancy related defect. The obtained results show that periodic annealing in the considered case does not offer any advantages over the one time annealing process.
Li, S. S.↗
Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells
Deep level transient spectroscopy and the Shockley-Read-Hall recombination theory are used to identify the defect responsible for reverse annealing in 2 ohm-cm n+/p silicon solar cells. This defect, with energy level at Ev + 0.30 eV, has been tentatively identified as a boron-oxygen-vacancy complex. It has been also determined by calculation that the removal of this defect could result in significant annealing at temperatures as low as 200 C for 2 ohm-cm and lower resistivity cells.
Weinberg, I.↗
Light emission as a solar cell analysis technique
In order to determine if a solar cell would indeed emit usable light as expected, a gallium arsenide solar cell was forward biased and examined with an infrared viewer. The light emitted from the solar cell was not uniform, ever though the I-V curve of the solar cell displayed no defects.
Honsberg, Christiana↗
Proton radiation resilience of CdSeTe photovoltaics: High predicted end-of-life performance for space applications
Two types of cadmium selenide telluride (CdSeTe) photovoltaic devices have been exposed to high-energy (150–1500 keV) protons with fluences ranging from 1 × 10 11 to 9 × 10 13 cm −2 . Pre- and post-irradiation current density vs voltage characteristic data were collected and analyzed. Arsenic-doped CdSeTe devices retained 80% of the power conversion efficiency (PCE) relative to control devices after exposure to 10 12 cm −2 650 keV protons, while copper-doped CdSeTe devices retained about 95% of the control PCE under the same irradiation condition. Displacement damage dose analysis coupled with simulations for duration-dependent performance in a medium Earth orbit space mission revealed superior PCE remaining factors, indicating greater resilience to proton bombardment than state-of-the-art multijunction III-V based space photovoltaic technologies.
CdTe solar cells↗