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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Modeling Reversible Volume Change in Automotive Battery Cells with Porous Silicon Oxide-Graphite Composite Anodes

Automotive battery manufacturers are working to improve the individual cell and overall pack design by increasing durability, performance, and range, while reducing cost, and active material volume change is a key aspect that needs to be considered during this design process. Recently, silicon oxide-graphite composite anodes are being explored to increase total anode capacity while maintaining a tolerable amount of cell level reversible volume expansion due to the relatively lower reversible volume change of the silicon oxide compared to pure battery grade or metallurgical grade silicon. To predict the blended anode response and contribution to the overall cell volume change, we integrated the mechanical behavior of the individual active materials with the multi-species, multi-reaction model to predict the state-of-lithiation of the active materials in the cell at a given potential. The resulting simulations illustrate the tradeoff in volume change between the silicon oxide and the graphite during cell operation. This type of modeling approach will allow designers to virtually consider the impact of cell level and pack level design changes on overall system mechanical performance for automotive and grid storage applications, namely that relatively small addition of silicon containing materials can drive a significant increase in the volume change at the cell level, as demonstrated by the 5 wt% addition of silicon oxide accounting for half of the overall volume change in the cell.

Garrick, Taylor R. (ORCID:0000000322518129)↗
DOE OSTI2024

Fracture Dynamics in Silicon Anode Solid-State Batteries

Solid-state batteries (SSBs) with silicon anodes could enable improved safety and energy density compared to lithium-ion batteries. However, degradation arising from the massive volumetric changes of silicon anodes during cycling is not well understood in solid-state systems. Here, we use operando X-ray computed microtomography to reveal micro- to macro-scale chemo-mechanical degradation processes of silicon anodes in SSBs. Mud-type channel cracks driven by biaxial tensile stress form across the electrode during delithiation. We also find detrimental cracks at the silicon/ solid electrolyte interface that form due to local reaction competition between neighboring domains of different sizes. Continuum phase-field damage modeling quantifies stress-driven channel cracking and shows that the lithiated silicon stress state is critical for determining the extent of interfacial fracture. This work reveals the mechanisms that govern SSBs compared to conventional lithium-ion batteries and provides guidelines for engineering chemomechanically resilient electrodes for high-energy batteries.

25 ENERGY STORAGE↗
DOE OSTI2020

Ionization Yield in Silicon for eV-Scale Electron-Recoil Processes

The development of single charge resolving, macroscopic silicon detectors has opened a window into rare processes at the O(eV) scale. In order to reconstruct the energy of a given event, or model the charge signal obtained for a given amount of energy absorbed by the electrons in a detector, an accurate charge yield model is needed. In this paper we review existing measurements of charge yield in Silicon, focusing in particular on the region below 1 keV. We highlight a calibration gap between 12-50 eV (referred to as the "UV-gap") and employ a phenomenological model of impact ionization to explore the likely charge yield in this energy regime. Finally, we explore the impact of variations in this model on a test case, that of dark matter scattering off electrons, to illustrate the scientific impact of uncertainties in charge yield.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Understanding and Mitigating the Contamination of Intrinsic poly-Si Gaps in Passivated IBC Solar Cells

We investigate factors that are critical for the performance of interdigitated back contact (IBC) solar cells based on polycrystalline silicon (poly-Si) passivated contacts. During patterning of doped lines using direct plasma deposition through a shadow mask, we show that the intrinsic poly-Si gap becomes contaminated with dopants, leading to shunting. Possible contamination mechanisms during masked deposition and high- temperature annealing are tested. Strategies developed to mitigate the contamination, such as reactive ion etching after deposition and amorphous to poly-Si crystallization in oxygen, will lead to improved IBC fabrication methods.

14 SOLAR ENERGY↗
DOE OSTI2024

Elucidating the Role of Carbon Conductive Additive in the Processing and Electrochemical Behavior of Surface-Modified Si Anodes

In the present work, we explore the impact of conducting carbon on the processing of silicon (Si)-rich electrodes, their resulting cycling performance, and parasitic side reactions. We employed three different carbon additives, Super C45 (carbon black), Super C65 (carbon black), and TIMCAL C-NERGY KS 6L (graphite), with varying sizes and morphologies to determine how these parameters influence the structure and the electrochemical behavior of the cast electrodes. Raman mapping indicates that the improved performance achieved using C45 can be explained by the homogeneous distribution of Si and carbon, enabling the formation of continuous electrical pathways throughout the electrode. Further, this finding aligns with the results of ζ potential measurements, which indicate that C45 can maintain more stable dispersions in N-methyl-2-pyrrolidone (NMP) compared with the other carbon additives. However, electrodes with C45 as the conducting agent exhibited increased parasitic side reactions, as evidenced by the leakage current obtained from voltage hold experiments. These side reactions can have adverse effects on the calendar life of the electrode. Furthermore, the Raman maps of the electrodes reveal heterogeneities in Si and carbon distribution with lower carbon content, especially with only 2% carbon. This drastically impacts the cyclability of the electrodes, with portions of the low-carbon electrodes that remain unable to undergo cycling even at slow rates (0.2 Ah g –1 ). Additionally, we found that slower formation rates are favored in the context of parasitic side reactions, although slower formation rates can potentially create thicker passivating films that could hinder Li + -ion transport. Therefore, we emphasize the need for an intricate balance in materials selection and cycling protocol for optimal electrode processing and electrochemical behavior.

25 ENERGY STORAGE↗
DOE OSTI2023

Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf 0.5 Zr 0.5 O 2 Thin Film Capacitors

Abstract As an emerging nonvolatile memory technology, HfO 2 ‐based ferroelectrics exhibit excellent compatibility with silicon CMOS process flows; however, the reliability of polarization switching in these materials remains a major challenge. During repeated field programming and erase of the polarization state of initially pristine HfO 2 ‐based ferroelectric capacitors, the magnitude of the measured polarization increases, a phenomenon known as “wake‐up”. In this study, the authors attempt to understand what causes the wake‐up effect in Hf 0.5 Zr 0.5 O 2 (HZO) capacitors using nondestructive methods that probe statistically significant sample volumes. Synchrotron X‐ray diffraction reveals a concerted shift in HZO Bragg peak position as a function of polarization switching cycle number in films prepared under conditions such that they exhibit extremely large (≈3000%) wake‐up. In contrast, a control sample with insignificant wake‐up shows no such peak shift. Capacitance – voltage measurements show evolution in the capacitance loop with switching cycle number for the wake‐up sample and no change for the control sample. Piezoresponse force microscopy measurements are utilized to visualize the domain switching with wake‐up. The combination of these observations clearly demonstrates that wake‐up is caused by a field‐driven phase transformation of the tetragonal phase to the metastable ferroelectric orthorhombic phase during polarization switching of HZO capacitors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Beam-driven dynamics of aluminium dopants in graphene

Abstract Substituting heteroatoms into graphene can tune its properties for applications ranging from catalysis to spintronics. The further recent discovery that covalent impurities in graphene can be manipulated at atomic precision using a focused electron beam may open avenues towards sub-nanometer device architectures. However, the preparation of clean samples with a high density of dopants is still very challenging. Here, we report vacancy-mediated substitution of aluminium into laser-cleaned graphene, and without removal from our ultra-high vacuum apparatus, study their dynamics under 60 keV electron irradiation using aberration-corrected scanning transmission electron microscopy and spectroscopy. Three- and four-coordinated Al sites are identified, showing excellent agreement with ab initio predictions including binding energies and electron energy loss spectrum simulations. We show that the direct exchange of carbon and aluminium atoms predicted earlier occurs under electron irradiation, although unexpectedly it is less probable than the same process for silicon. We also observe a previously unknown nitrogen–aluminium exchange that occurs at Al–N double-dopant sites at graphene divacancies created by our plasma treatment.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Properties of SiC-Si made via binder jet 3D printing of SiC powder, carbon addition, and silicon melt infiltration

In this work, we report the physical and mechanical properties of ceramic composite materials fabricated by binder jet 3D printing (BJ3DP) with silicon carbide (SiC) powders, followed by phenolic resin infiltration and pyrolysis (IP) to generate carbon, and a final reactive silicon melt infiltration step. After two phenolic resin infiltration and pyrolysis cycles; porosity was less than 2%, Young's modulus was close to 300 GPa, and the flexural strength was 517.6 ± 24.8 MPa. However, diminishing returns were obtained after more than two phenolic resin infiltration and pyrolysis cycles as surface pores in carbon were closed upon the formation of SiC, resulting in reaction choking and residual-free carbon and porosity. The instantaneous coefficient of thermal expansion of the composite was found to be independent of the number of phenolic IP cycles and had values of between 4.2 and 5.0 ppm/°C between 300 and 100°C, whereas the thermal conductivity was found to have a weak dependence on the number of phenolic IP cycles. While the manufacturing procedures described here yielded highly dense, gas impermeable, siliconized SiC composites with properties comparable to those of bulk siliconized silicon carbide processed according to conventional techniques, BJ3DP enables the manufacture of objects with complex shape, unlike conventional techniques.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Theoretical perspective on phase stability and polarization switching in ferroelectric hafnia

Fluorite-based ferroelectric materials are revolutionizing the application space of polar semiconductors. These materials leverage robust polarization of extremely thin films, compatibility with the silicon chip processing, and decades of manufacturing experience to enable a new generation of ferroelectric memory devices. As a new paradigm for ferroelectrics, understanding of phase transitions and the switching mechanism in fluorites is essential both for advancing applications and for fundamental science. In this article, we outline the recent progress that has been made to understand the relative phase stability, phase transition and order parameter coupling, ferroelectric switching through unique nucleation and growth processes, and how defects affect these phases and processes. The main challenges, opportunities, and next steps for leveraging these materials for next-generation devices are reviewed.

Condensed Matter Physics↗
DOE OSTI2021

A New Route to Quantum-Scale Structures through a Novel Enhanced Germanium Diffusion Mechanism

This project sought to develop a fundamental understanding of the mechanisms underlying a newly observed enhanced germanium (Ge) diffusion process in silicon germanium (SiGe) semiconductor nanostructures during thermal oxidation. Using a combination of oxidationdiffusion experiments, high resolution imaging, and theoretical modeling, a model for the enhanced Ge diffusion mechanism was proposed. Additionally, a nanofabrication approach utilizing this enhanced Ge diffusion mechanism was shown to be applicable to arbitrary 3D shapes, leading to the fabrication of stacked silicon quantum dots embedded in SiGe nanopillars. A new wet etch-based method for preparing 3D nanostructures for highresolution imaging free of obscuring material or damage was also developed. These results enable a new method for the controlled and scalable fabrication of on-chip silicon nanostructures with sub-10 nm dimensions needed for next generation microelectronics, including low energy electronics, quantum computing, sensors, and integrated photonics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Localized Strain Analysis of Ce- and Mg-Treated Cast Iron under Uniaxial Compression

Cast iron exhibits a wide range of mechanical properties, depending on its microstructural features. The microstructure of cast iron consists of several microconstituents with different elastic-plastic behavior, making the strain non-uniform across the bulk material. To understand the individual effects of these microconstituents on the overall mechanical behavior, local strain analysis using digital image correlation analysis was carried out. Samples with two different compositions (varying cerium, magnesium and silicon) were processed at different solidification velocities in a Bridgman furnace. Sections of the directionally solidified samples were loaded under uniaxial compression to measure global and local strain behavior. Despite the variability of the microstructure, the stress–strain curves obtained by digital image correlation (DIC) were found to react in a well-controlled way to changes in solidification velocity. It was observed that high-strain failure (greater than 15%) was accompanied by local straining of the softer ferritic phase, but during low-strain failure, local straining was not prominent. Higher nodularities, due to higher solidification velocities, raised the compressive strength without affecting the toughness significantly. Higher percentages of carbides led to higher compressive strengths with corresponding losses in ductility. The continuity of the matrix was also found to play an important role in the behavior during compression.

ductile failure↗
DOE OSTI2025

Low embodied energy and carbon, high lifetime silicon boules via a combined chemical vapor deposition/float zone process

This work evaluates a new process route to making float zone (Fz)-quality silicon wafers using a combination of computational fluid dynamics (CFD) modeling and technoeconomic analysis. Our analysis finds that the new process competes with Czochralski (Cz)-grown wafers on a levelized cost of energy system level. The new process also decreases embodied energy and carbon of silicon photovoltaics (PV) by ~6x circumventing the energy-costly Siemens process used in polycrystalline silicon (poly-Si) production plants to generate feedstock for Fz and Cz boules. Instead of using poly-Si from the Siemens process to feed crystallization, the new process uses the high-purity, trichlorosilane (TCS) precursor gas to grow a poly-Si feed rod in-situ during a modified Fz1,2 boule growth process. The gas-to-boule float zone process enables opportunity to produce high-purity (low metals and oxygen content), uniformly doped single crystal silicon boules and wafers with high bulk lifetimes (τ bulk > 15 ms) to enable higher efficiency cells (>27 %) with fewer known degradation mechanisms than Czochralski (Cz)-grown wafers. These benefits reduce the levelized cost of electricity (LCOE) of PV-produced electricity. Here we show the results of our CFD and chemical modeling of the process to prove feasibility and economic viability.

14 SOLAR ENERGY↗
DOE OSTI2021

Probing Clustering Dynamics between Silicon and PAA or LiPAA Slurries under Processing Conditions

This work explores the complex interplay between slurry aggregation, agglomeration, and conformation (i.e., shape) of poly(acrylic acid) (PAA)- and lithiated PAA-based silicon slurries as a function of the shear rate and the resulting slurry homogeneity. These values were measured by small-angle neutron scattering (SANS) and rheology-coupled ultra-SANS at conditions relevant to battery electrode casting. Different binder solution preparation methods, either a ball milling (BM) process or a planetary centrifugal mixing (PCM) process, dramatically modify the resulting polymer dynamics and organization around a silicon material. This is due to the different energy profiles of mixing where the more violent and higher energy PCM causes extensive breakdown and reformation of the binder, which is now likely in a branched conformation, while the lower energy BM results in simply lower-molecular weight linear polymers. In conclusion, the breakdown and reorganization of the polymer structure affect silicon slurry homogeneity, which affects subsequent electrode architecture.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Efficient Silicon Carbide (SiC) Fiber Manufacture: Continuous Processing of Novel Precursors via Modified Material Handling

General Atomics Electromagnetic Systems (GA-EMS) together with The Nonwovens Institute (NWI) and Harper International have executed on a development project to improve the production efficiency and reduce the production cost of silicon carbide (SiC) fiber – a critical material that advances US energy security and aerospace leadership. In the first budget period (BP1), the modified tow throughput (MTT) apparatus was developed, enabling fiber spinning in the form of loose coils rather than tightly packed spools (Figure 1) for batch processing of SiC fiber. This coil-based approach was proven to be capable of uniform fiber crosslinking and ceramic conversion, as well as demonstrating key process efficiencies while meeting the program fiber property targets.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Probing the Atomic Scale Mechanisms of Time Dependent Dielectric Breakdown in Si/SiO 2 MOSFETs (June 2022)

Here we report on an atomic-scale study of trap generation in the initial/intermediate stages of time-dependent dielectric breakdown (TDDB) in high-field stressed (100) Si/SiO2 MOSFETs using two powerful analytical techniques: electrically detected magnetic resonance (EDMR) and near-zero-field magnetoresistance (NZFMR). We find the dominant EDMR-sensitive traps generated throughout the majority of the TDDB process to be silicon dangling bonds at the (100) Si/SiO2 interface (Pb0 and Pb1 centers) for both the spin-dependent recombination (SDR) and trap-assisted tunneling (SDTAT) processes. We find this generation to be linked to both changes in the calculated interface state densities as well as changes in the NZFMR spectra for recombination events at the interface, indicating a redistribution of mobile magnetic nuclei which we conclude could only be due to the redistribution of hydrogen at the interface. Additionally, we observe the generation of traps known as E’ centers in EDMR measurements at lower experimental temperatures via SDR measurements at the interface. Our work strongly suggests the involvement of a rate-limiting step in the tunneling process between the silicon dangling bonds generated at the interface and the ones generated throughout the oxide.

36 MATERIALS SCIENCE↗