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Results for “semiconductor waveguides”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Bound States in the Continuum on a Silicon Chip with Dynamic Tuning

Expanding bound states in the continuum (BIC) beyond photonic crystal systems may enable broader applications benefiting from the unique properties of BIC states. We use photonic integrated circuit to realize a Fabry-Pérot BIC on a silicon chip. The devices consist of cascaded ring resonators with tunable resonance frequencies and phase delays. As a result, the BIC state is dynamically tuned with electrical I/O. We analyze the mechanism of the formation of BIC states in this waveguide system and point out the fundamental differences between the BIC states and electromagnetically induced transparency states in integrated photonics. The high transmission protected by the BIC state enables versatile optical filters, which are capable of independent control over switching, peak position, and quality factor. We also demonstrate the scalability of this platform. As a result, this integrated silicon photonic platform brings opportunities for practical BIC applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Low Threshold, Long Wavelength Interband Cascade Lasers With High Voltage Efficiencies

Here, we report on the substantial advancement of long wavelength InAs-based interband cascade lasers (ICLs) utilizing advanced waveguides formed from hybrid cladding layers and targeting the 10-12 µm wavelength region. Modifications in the hole injector have improved carrier transport in these ICLs, resulting in significantly reduced threshold voltages (V th ) as low as 3.62 V at 80 K. Consequently, much higher voltage efficiencies were observed, peaking at about 73% at 10.3 µm and allowing for large output powers of more than 100 mW/facet. Also, low threshold current densities (J th ) of 8.8 A/cm 2 in cw mode and 7.6 A/cm 2 in pulsed mode near 10 µm were observed; a result of adjustments in the GaInSb hole well composition intended to reduce the overall strain accumulation in the ICL. Furthermore, an ICL from the second wafer operating at a longer wavelength achieved a peak voltage efficiency of 57% at 11.7 µm, with a peak output power of more than 27 mW/facet. This ICL went on to lase beyond 12 µm in both cw and pulsed modes, representing a new milestone in long wavelength coverage for ICLs with the standard W-QW active region.

47 OTHER INSTRUMENTATION↗
NASA NTRS1994

Modes in light wave propagating in semiconductor laser

The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

Manko, Margarita A.↗
NASA NTRS1997

Gold Coating

Epner Technology Inc. responded to a need from Goddard Space Flight Center for the ultimate in electroplated reflectivity needed for the Mars Global Surveyor Mars Orbiter Laser Altimeter (MOLA). Made of beryllium, the MOLA mirror was coated by Epner Technology Laser Gold process, specially improved for the project. Improved Laser Gold- coated reflectors have found use in an epitaxial reactor built for a large semiconductor manufacturer as well as the waveguide in Braun-Thermoscan tympanic thermometer and lasing cavities in various surgical instruments.

Source record↗
NASA NTRS1987

Approximate Analysis of Semiconductor Laser Arrays

Simplified equation yields useful information on gains and output patterns. Theoretical method based on approximate waveguide equation enables prediction of lateral modes of gain-guided planar array of parallel semiconductor lasers. Equation for entire array solved directly using piecewise approximation of index of refraction by simple functions without customary approximation based on coupled waveguid modes of individual lasers. Improved results yield better understanding of laser-array modes and help in development of well-behaved high-power semiconductor laser arrays.

Marshall, William K.↗
NASA NTRS1975

Development of a monolithic GaAs integrated optical transmitter

The paper discusses a program designed for the development of a GaAs IOC transmitter consisting of a monolithic surface laser whose output is coupled into patterned channel waveguides. Modulation and switching of the radiation occur in the waveguide circuit and are controlled separately. These structures are to be fabricated monolithically on a single semiconductor chip with each device amenable to integrated low-cost manufacture. The waveguide outputs of the IOC transmitter will be coupled to single mode optical fibers which form a transmission cable. The properties of the semiconductors (Ga,Al)As and (Ga,In)As permit performance of each of the basic functions included in the device considered. The concept of monolithic nondiscrete GaAs diode lasers is examined along with optical stripline channel waveguides and electro-optic channel waveguide modulators and switches.

Blum, F. A.↗
NASA NTRS2007

Mechanisms and Methods for Selective Wavelength Filtering

An optical filter includes a dielectric waveguide layer, supporting waveguide modes at specific wavelengths and receiving incident light, a corrugated film layer, composed of one of a metal and a semiconductor and positioned adjacent to a second surface of the waveguide layer and a sensor layer, wherein the sensor layer is capable of absorbing optical energy and generating a corresponding electrical signal. The metal film layer supports a plurality of plasmons, the plurality of plasmons producing a first field and is excited by a transverse mode of the waveguide modes at a wavelength interval. The first field penetrates the sensor layer and the sensor layer generates an electrical signal corresponding to an intensity of received incident light within the wavelength interval.

Tuma, Margaret↗
NASA NTRS1992

Generating Far-Infrared Radiation By Two-Wave Mixing

Far-infrared radiation 1 to 6 GHz generated by two-wave mixing in asymmetrically grown GaAs/AlxGa1-xAs multiple-quantum-well devices. Two near-infrared semiconductor diode lasers phase-locked. Outputs amplified, then combined in semiconductor nonlinear multiple-quantum-well planar waveguide. Necessary to optimize design of device with respect to three factors: high degree of confinement of electromagnetic field in nonlinear medium to maximize power density, phase matching to extend length of zone of interaction between laser beams in non-linear medium, and nonlinear susceptibility. Devices used as tunable local oscillators in heterodyne-detection radiometers.

Borenstain, Shmuel↗
NASA NTRS2010

Performance of Planar-Waveguide External Cavity Laser for Precision Measurements

A 1542-nm planar-waveguide external cavity laser (PW-ECL) is shown to have a sufficiently low level of frequency and intensity noise to be suitable for precision measurement applications. The frequency noise and intensity noise of the PW-ECL was comparable or better than the nonplanar ring oscillator (NPRO) and fiber laser between 0.1 mHz to 100 kHz. Controllability of the PW-ECL was demonstrated by stabilizing its frequency to acetylene (13C2H2) at 10(exp -13) level of Allan deviation. The PW-ECL also has the advantage of the compactness of a standard butterfly package, low cost, and a simple design consisting of a semiconductor gain media coupled to a planar-waveguide Bragg reflector. These features would make the PW-ECL suitable for precision measurements, including compact optical frequency standards, space lidar, and space interferometry

Numata, Kenji↗
NASA NTRS1986

Direct analysis of gain-guided phase-locked semiconductor laser arrays

A method for analyzing arbitrary one-dimensional waveguides is described and applied to find the lateral modes of gain-guided laser arrays directly, without the need for a coupled-mode approximation. Detailed results are given for a four-element array for which experimental results are available, and the effect of varying device parameters on the relative gains of the modes is considered. The results show differences between gain-guided and real-index guided arrays which are not evident in prior analyses.

Marshall, W. K.↗
NASA NTRS2014

Dielectric Covered Planar Antennas

An antenna element suitable for integrated arrays at terahertz frequencies is disclosed. The antenna element comprises an extended spherical (e.g. hemispherical) semiconductor lens, e.g. silicon, antenna fed by a leaky wave waveguide feed. The extended spherical lens comprises a substantially spherical lens adjacent a substantially planar lens extension. A couple of TE/TM leaky wave modes are excited in a resonant cavity formed between a ground plane and the substantially planar lens extension by a waveguide block coupled to the ground plane. Due to these modes, the primary feed radiates inside the lens with a directive pattern that illuminates a small sector of the lens. The antenna structure is compatible with known semiconductor fabrication technology and enables production of large format imaging arrays.

Llombart Juan, Nuria↗
NASA NTRS1989

Growth and characterization of single crystal insulators on silicon

An overview of the growth and characterization of epitaxial insulators on semiconductors is presented. The potential applications include semiconductor-on-insulator structures, three-dimensional and/or high-density integrated circuits, optoelectronic applications such as integrated waveguides and improved gate insulators. The growth and physical characterization of epitaxial fluorides on semiconductors are discussed. Consideration is also given to the epitaxial overgrowth of epitaxial metal layers with CaF2 as well as to the formation of a novel superlattice of Ca particles in epitaxial CaF2.

Schowalter, Leo J.↗
DOE OSTI2025

Direct Measurement of Terahertz Conductivity in a Gated Monolayer Semiconductor

Two-dimensional semiconductors and their moiré superlattices have emerged as important platforms for investigating correlated electrons. However, many key properties of these systems, such as the frequency-dependent conductivity, remain experimentally inaccessible because of the mesoscopic sample size. Here we report a technique to directly measure the complex conductivity of electrostatically gated two-dimensional semiconductors in the terahertz frequency range. Applying this technique to a WSe2 monolayer encapsulated in hBN, we observe a clear Drude-like response between 0.1 and 1 THz, in a density range challenging to access even in DC transport. Our work opens a new avenue for studying tunable van der Waals heterostructures using terahertz spectroscopy.

2D semiconductors↗
DOE OSTI2025

Single-Photon Generation: Materials, Techniques, and the Rydberg Exciton Frontier

Due to their quantum nature, single-photon emitters (SPE) generate individual photons in bursts or streams. They are paramount in emerging quantum technologies such as quantum key distribution, quantum repeaters, and measurement-based quantum computing. Many such systems have been reported in the last three decades, from rubidium atoms coupled to cavities to semiconductor quantum dots and color centers implanted in waveguides. This review article highlights different solid-state and atomic systems with on-demand and controlled single-photon generation. We discuss and compare the performance metrics, such as purity and indistinguishability, for these sources and evaluate their potential for different applications. Finally, a new potential single-photon source, based on the Rydberg exciton in solid-state metal oxide thin films, is introduced, where we discuss its promising features and unique advantages in fabricating quantum chips for quantum photonic applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1996

InP-Based Ridge Waveguide Lasers for Wavelength Division Multiplexing Applications

Wavelength division multiplexed (WDM) systems place stringent requirements on the absolute wavelength and wavelength spacing of the elements in laser arrays. Ridge waveguides (RW) show excellent potential for practical implementation due to their simple fabrication with relaxed fabrication tolerances, high reliability and good performancce. An analysis of the fabrication tolerances for RW and buried heterostructure (BH) devices is performed, showing the advantages offered by the ridge design.

wavelength↗
NASA NTRS2003

Measured Propagation Characteristics of Coplanar Waveguide on Semi-Insulating 4H-SiC Through 800 K

Wireless sensors for high temperature industrial applications and jet engines require RF transmission lines and RF integrated circuits (RFICs) on wide bandgap semiconductors such as SiC. In this paper, the complex propagation constant of coplanar waveguide fabricated on semiinsulating 4H-SiC has been measured through 813 K. It is shown that the attenuation increases 3.4 dB/cm at 50 GHz as the SiC temperature is increased from 300 K to 813 K. Above 500 K, the major contribution to loss is the decrease in SiC resistivity. The effective permittivity of the same line increases by approximately 5 percent at microwave frequencies and 20 percent at 1 GHz.

Ponchak, George E.↗
NASA NTRS2021

Waveguiding and Dispersion Properties of Interband Cascade Laser Frequency Combs

Mid-infrared semiconductor lasers have emerged as indispensable compact coherent sources for military and commercial applications. While much of the historical emphasis has been on maximizing the output power and/or spectral purity, a recent new focus has been on engineering these lasers to operate as optical frequency combs (OFCs) for broadband real-time spectroscopy. In particular, the combination of low-drive-power and broad gain bandwidth has made interband cascade laser (ICL) OFCs an attractive complement to quantum cascade laser OFCs operating at longer wavelengths. Moreover, ICL combs can potentially be incorporated into fully-integrated dual-comb spectrometers that employ fast, room-temperature IC photodetectors processed on the same chip.However, the high refractive index of the ICL’s GaSb substrate poses some challenges to the optical waveguiding. Because the modal index is considerably lower than that of the substrate, the optical field can penetrate the bottom cladding layer and leak into the GaSb, inducing wavelength-dependent interference that modifies the gain and group velocity dispersion (GVD) profiles. Even when the effect on lasing threshold is small, the comb properties can be adversely affected. Using the sub-threshold Fourier transform technique, we studied ICL combs with various ridge widths, substrate thicknesses, and center wavelengths. This allowed us to evaluate the effects of modal leakage on the GVD. We find that the resonant nature of the substrate modes induces oscillations, which affect both the spectral bandwidth and the phase-locking properties above threshold. Strategies to mitigate the GVD’s undesired and unpredictable spectral variation will be presented.

Meyer, J. R↗
DOE OSTI2022

Infrared plasmons propagate through a hyperbolic nodal metal

Metals are canonical plasmonic media at infrared and optical wavelengths, allowing one to guide and manipulate light at the nanoscale. A special form of optical waveguiding is afforded by highly anisotropic crystals revealing the opposite signs of the dielectric functions along orthogonal directions. These media are classified as hyperbolic and include crystalline insulators, semiconductors, and artificial metamaterials. Layered anisotropic metals are also anticipated to support hyperbolic waveguiding. However, this behavior remains elusive, primarily because interband losses arrest the propagation of infrared modes. Here, we report on the observation of propagating hyperbolic waves in a prototypical layered nodal-line semimetal ZrSiSe. The observed waveguiding originates from polaritonic hybridization between near-infrared light and nodal-line plasmons. Unique nodal electronic structures simultaneously suppress interband loss and boost the plasmonic response, ultimately enabling the propagation of infrared modes through the bulk of the crystal.

77 NANOSCIENCE AND NANOTECHNOLOGY↗