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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

A modified pump laser system to pump the titanium sapphire laser

As a result of the wide tunability of the titanium sapphire laser NASA has sited it to be used to perform differential absorption lidar (DIAL) measurements of H2O vapor in the upper and lower troposphere. The titanium sapphire laser can provide a spectrally narrow (0.3 to 1.0 pm), high energy (0.5 to 1.0 J) output at 727, 762, and 940 nm which are needed in the DIAL experiments. This laser performance can be obtained by addressing the line-narrowing issues in a master oscillator and the high energy requirement in a fundamental mode oscillator. By injection seeding, the single frequency property of the master oscillator can produce a line narrow high energy power oscillator. A breadboard model of the titanium sapphire laser that will ultimately be used in NASA lidar atmospheric sensing experiment is being designed. The task was to identify and solve any problem that would arise in the actual laser system. One such problem was encountered in the pump laser system. The pump laser that is designed to pump both the master oscillator and power oscillator is a Nd:YLF laser. Nd:YLF exhibits a number of properties which renders this material an attractive option to be used in the laser system. The Nd:YLF crystal is effectively athermal; it produces essentially no thermal lensing and thermally induced birefringence is generally insignificant in comparison to the material birefringence resulting from the uniaxial crystal structure. However, in application repeated fracturing of these laser rods was experience. Because Nd:YLF rods are not commercially available at the sizes needed for this application a modified pump laser system to replace the Nd:YLF laser rod was designed to include the more durable Nd:YAG laser rods. In this design, compensation for the thermal lensing effect that is introduced because of the Nd:YAG laser rods is included.

Petway, Larry B.↗
NASA NTRS1991

Optical waveguide formed by cubic silicon carbide on sapphire substrates

Optical confinement in beta silicon carbide (beta-SiC) thin films on sapphire substrate is demonstrated. Measurements are performed on waveguides formed by the mechanical transfer of thin beta-SiC films to sapphire. Recent results of epitaxial films of SiC on sapphire substrates attest to the technological viability of optoelectronic devices made from silicon carbide. Far-field mode patterns are shown. It is believed that this is the first step in validating a silicon carbide optoelectronic technology.

Tang, Xiao↗
NASA NTRS1991

Sapphire fiber interferometer for microdisplacement measurements at high temperatures

We report the use of a short-length, multimode sapphire rod as an extension to a Michelson configuration, but operated as a low-finesse Fabry-Perot cavity. We demonstrate the performance of such a device as an interferometric sensor, where the interference between the reflections from the sapphire-air interface and an air-metallic surface is observed for microdisplacement of the metallic surface which is placed close to the sapphire endface. We describe in detail the fabrication procedure and present results obtained from the detection of temperature changes, applied strain, and surface acoustic waves.

Murphy, Kent A.↗
NASA NTRS1993

Interfacial Shear Strength of Cast and Directionally Solidified Nial-Sapphire Fiber Composites

The feasibility of fabricating intermetallic NiAl-sapphire fiber composites by casting and zone directional solidification has been examined. The fiber-matrix interfacial shear strengths measured using a fiber push-out technique in both cast and directionally solidified composites are greater than the strengths reported for composites fabricated by powder cloth process using organic binders. Microscopic examination of fibers extracted from cast, directionally solidified (DS), and thermally cycled composites, and the high values of interfacial shear strengths suggest that the fiber-matrix interface does not degrade due to casting and directional solidification. Sapphire fibers do not pin grain boundaries during directional solidification, suggesting that this technique can be used to fabricate sapphire fiber reinforced NiAl composites with single crystal matrices.

Tewari, S. N.↗
NASA NTRS1996

High Temperature Testing with Sapphire Fiber White-Light Michelson Interferometers

In the design of new aerospace materials, developmental testing is conducted to characterize the behavior of the material under severe environmental conditions of high stress, temperature, and vibration. But to test these materials under extreme conditions requires sensors that can perform in harsh environments. Current sensors can only monitor high temperature test samples using long throw instrumentation, but this is inherently less accurate than a surface mounted sensor, and provides no means for fabrication process monitoring. A promising alternative is the use of sapphire optical fiber sensors. Sapphire is an incredibly rugged material, being extremely hard (9 mhos), chemically inert, and having a melting temperature (over 2000 C). Additionally, there is a extensive background of optical fiber sensors upon which to draw for sapphire sensor configurations.

Barnes, A.↗
NASA NTRS2000

A Compact Ti:Sapphire Laser With its Third Harmonic Generation (THG) for an Airborne Ozone Differential Absorption Lidar (DIAL) Transmitter

A compact and high-pulse-energy Ti:Sapphire laser with its Third Harmonic Generation (THG) has been developed for an airborne ozone differential absorption lidar (DIAL) to study the distributions and concentrations of the ozone throughout the troposphere. The Ti:Sapphire laser, pumped by a frequency-doubled Nd:YAG laser and seeded by a single mode diode laser, is operated either at 867 nm or at 900 nm with a pulse repetition frequency of 20 Hz. High energy laser pulses (more than 110 mJ/pulse) at 867 nm or 900 nm with a desired beam quality have been achieved and utilized to generate its third harmonic at 289nm or 300nm, which are on-line and off-line wavelengths of an airborne ozone DIAL. After being experimentally compared with Beta-Barium Borate (beta - BaB2O4 or BBO) nonlinear crystals, two Lithium Triborate (LBO) crystals (5 x 5 x 20 cu mm) are selected for the Third Harmonic Generation (THG). In this paper, we report the Ti:Sapphire laser at 900 nm and its third harmonic at 300 nm. The desired high ultraviolet (UV) output pulse energy is more than 30 mJ at 300 nm and the energy conversion efficiency from 900 nm to 300 nm is 30%.

Chen, Songsheng↗
NASA NTRS2003

Fabrication of Monolithic Sapphire Membranes for High Tc Bolometer Array Development

This paper examines the effectiveness of Pt/Cr thin film masks for the architecture of monolithic membrane structures in r-plane sapphire. The development of a pinhole-free Pt/Cr composite mask that is resistant to hot H2SO4:H3PO4 etchant, will lead to the fabrication of smooth sapphire membranes whose surfaces are well-suited for the growth of low-noise high Tc films. In particular, the relationship of thermal annealing conditions on the Pt/Cr composite mask system to: (1) changes in the surface morphology and elemental concentration of the Pt/Cr thin film layers and (2) etch pit formation on the sapphire surface will be presented.

Pugel, D. E.↗
NASA NTRS2004

Fabrication of Monolithic Sapphire Membranes for High T(sub c) Bolometer Array Development

This paper examines the effectiveness of Pt/Cr thin film masks for the architecture of monolithic membrane structures in r-plane single crystal sapphire. The development of a pinhole-free Pt/Cr composite mask that is resistant to boiling H2SO4:H3PO4 etchant will lead to the fabrication of smooth sapphire membranes whose surfaces are well-suited for the growth of low-noise high Tc films. In particular, the relationship of thermal annealing conditions on the Pt/Cr composite mask system to: (1) changes in the surface morphology (2) elemental concentration of the Pt/Cr thin film layers and (3) etch pit formation on the sapphire surface will be presented.

Pugel, D. E.↗
NASA NTRS2003

Life-Prediction Parameters of Sapphire Determined for the Design of a Space Station Combustion Facility Window

To characterize the stress corrosion parameters and predict the life of a sapphire window being considered for use in the International Space Station's Fluids and Combustion Facility, researchers at the NASA Glenn Research Center conducted stress corrosion tests, fracture toughness tests, and reliability analyses, as shown in the figures. Standardized test methods, developed and updated by the author under the auspices of American Society for Testing and Materials, were employed. One interesting finding is that sapphire exhibits a susceptibility to stress corrosion in water similar to that of glass. In addition to generating the stress corrosion parameters and fracture toughness data, closed-form expressions for the variances of the crack growth parameters were derived. The expressions allow confidence bands to be easily placed on life predictions of ceramic components. Brittle materials such as sapphire and quartz are required for windows in a variety of applications such as the Fluids and Combustion Facility. To minimize the launch weight of such facilities, researchers must design the windows to be as lightweight as possible. The safe use of lightweight, brittle windows in structural applications is limited by two factors: low fracture toughness and slow crack growth, or stress corrosion. Stress corrosion of these and other optical materials can occur in relatively common environments, such as humid air. Access to the data has been requested by designers for use in the life prediction of a Northrop Grumman F16 instrument window and a Jet Propulsion Laboratory instrument window. One Space Act Agreement has been formed. Future work includes the measurement of the life of subscale windows.

Salem, Jonathan A.↗
NASA NTRS2009

Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than plus or minus 10 deg.) sapphire (0001) substrate can be used to improve epitaxial relationships better by providing attractive atomic steps in the epitaxial process.

Choi, Sang↗
NASA NTRS2009

Failure Analysis of Sapphire Refractive Secondary Concentrators

Failure analysis was performed on two sapphire, refractive secondary concentrators (RSC) that failed during elevated temperature testing. Both concentrators failed from machining/handling damage on the lens face. The first concentrator, which failed during testing to 1300 C, exhibited a large r-plane twin extending from the lens through much of the cone. The second concentrator, which was an attempt to reduce temperature gradients and failed during testing to 649 C, exhibited a few small twins on the lens face. The twins were not located at the origin, but represent another mode of failure that needs to be considered in the design of sapphire components. In order to estimate the fracture stress from fractographic evidence, branching constants were measured on sapphire strength specimens. The fractographic analysis indicated radial tensile stresses of 44 to 65 MPa on the lens faces near the origins. Finite element analysis indicated similar stresses for the first RSC, but lower stresses for the second RSC. Better machining and handling might have prevented the fractures, however, temperature gradients and resultant thermal stresses need to be reduced to prevent twinning.

Salem, Jonathan A.↗
NASA NTRS2018

Single Crystal Rhombohedral Epitaxy of Sige on Sapphire at 450.Degree. C.-500.Degree. C. Substrate Temperatures

Various embodiments may provide a low temperature (i.e., less than 850° C.) method of Silicon-Germanium (SiGe) on sapphire (Al2O3) (SiGe/sapphire) growth that may produce a single crystal film with less thermal loading effort to the substrate than conventional high temperature (i.e., temperatures above 850° C.) methods. The various embodiments may alleviate the thermal loading requirement of the substrate, which in conventional high temperature (i.e., temperatures above 850° C.) methods had surface temperatures within the range of 850° C.-900° C. The various embodiments may provide a new thermal loading requirement of the sapphire substrate for growing single crystal SiGe on the sapphire substrate in the range of about 450° C. to about 500° C.

Choi, Sang Hyouk↗
DOE OSTI2025

Robust Avalanche (1.5 kV, 2 kA/cm²) in Vertical GaN Diodes on Patterned Sapphire Substrate

The lack of avalanche capability is a key limitation of current lateral GaN devices. Despite the report of avalanche in vertical GaN-on-GaN devices, the high wafer cost hinders device commercialization. Here, in this work, we demonstrate a circuit-level avalanche in vertical GaN diodes on low-cost patterned sapphire substrate (PSS), with the avalanche voltage (1.57 kV) and avalanche current density (>2 kA/cm 2 ) both being the highest reported in GaN devices on foreign substrates. The PSS enables a lower dislocation density than conventional sapphire substrate and is employed in high-voltage GaN devices for the first time. The avalanche voltage in the circuit test reaches 98% of the parallel-plane limit, further affirming that near-ideal avalanche breakdown can be realized on GaN devices on foreign substrates. These results show the promise of the GaN-on-PSS platform for low-cost, robust power devices.

42 ENGINEERING↗
NASA NTRS2004

Progress on 10 Kelvin cryo-cooled sapphire oscillator

We present recent progress on the 10 Kelvin Cryocooled Sapphire Oscillator (10K CSO). Included are incorporation of a new pulse tube cryocooler, cryocooler vibration comparisons between G-M and pulse-tube types, phase noise, and frequency stability tests. For the advantage of a single stage pulse tube cryocooler, we also present results for a 40K Compensated Sapphire Oscillator (40K CSO).

sapphire↗
NASA NTRS2006

Progress Report for a New Cryogenic Sapphire Oscillator

We present design progress and subsystem test results for a new short-term frequency standard, the Voltage Controlled Sapphire Oscillator (VCSO). Included are sapphire resonator and coupling design, cryocooler environmental sensitivity tests, Q measurement results, and turnover temperature results. A previous report presented history of the design related to resonator frequency and frequency compensation [1]. Performance goals are a frequency stability of 1x10(exp -14) (1 second less than or equal to (tau) less than or equal to 100 seconds) and two years or more continuous operation. Long-term operation and small size are facilitated by use of a small Stirling cryo-cooler (160W wall power) with an expected 5 year life.

oscillator↗
NASA NTRSDate not supplied

A Brief History of the Curation of Genesis Sapphire Solar Wind Collectors

Commercial, high purity semiconductor sapphire (AKA corundum) wafers were used as one of the passive solar wind collector materials on the Genesis sample return mission because it exhibited lower diffusion rates for alkali elements than silicon and had sufficiently low alkali blanks. The 20 whole hexagons of sapphire flown on the Genesis spacecraft were distributed among the solar wind (SW) regimes as follows: 8 bulk solar wind (plus two half hexagons), 4 coronal mass ejection (CME), 4 coronal hole (CH), and 4 interstream (IS). Excellent overviews: a) collector material properties presented in [1] and b) solar wind environment experienced by collectors presented in [2].

Genesis sample return mission↗
DOE OSTI2025

Three-dimensional characterization of modifications in sapphire exposed to laser-induced damage using multimodal spectral microimaging

Sapphire (Al 2 O 3 ) is a commonly used dielectric material with many applications in lasers and optical systems. Owing to its high resistivity to laser induced damage, it is particularly suitable for use in high power laser systems. This work focuses on developing techniques to characterize material modifications in sapphire. These techniques were applied following localized laser induced ablation, commonly referred to as laser-damage, resulting from exposure to single 100-ps and 6-ns pulses. Measurements of fluorescence-based piezospectroscopy and confocal Raman microscopy were performed with spatial resolution on the order of 1 μ m. Raman microscopy reveals that the relaxation of material exposed to the rapid laser heating, elastic and viscoplastic deformation, melting, and solidification leads to the formation of a polycrystalline material phase. In addition, narrowband fluorescence lines, referred to as R 1 and R 2 , exhibit pressure-sensitive changes to their spectral profiles, allowing 3D internal stresses to be recorded with spatial resolution of the order of a few micrometers.

Laser-damage↗