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Flash memory management system and method utilizing multiple block list windows
The present invention provides a flash memory management system and method with increased performance. The flash memory management system provides the ability to efficiently manage and allocate flash memory use in a way that improves reliability and longevity, while maintaining good performance levels. The flash memory management system includes a free block mechanism, a disk maintenance mechanism, and a bad block detection mechanism. The free block mechanism provides efficient sorting of free blocks to facilitate selecting low use blocks for writing. The disk maintenance mechanism provides for the ability to efficiently clean flash memory blocks during processor idle times. The bad block detection mechanism provides the ability to better detect when a block of flash memory is likely to go bad. The flash status mechanism stores information in fast access memory that describes the content and status of the data in the flash disk. The new bank detection mechanism provides the ability to automatically detect when new banks of flash memory are added to the system. Together, these mechanisms provide a flash memory management system that can improve the operational efficiency of systems that utilize flash memory.
System Assessment of a High Power 3-U CubeSat
The Advanced eLectrical Bus (ALBus) CubeSat project is a technology demonstration mission of a 3-UCubeSat with an advanced, digitally controlled electrical power system capability and novel use of Shape Memory Alloy (SMA) technology for reliable deployable solar array mechanisms. The objective of the project is to, through an on orbit demonstration, advance the state of power management and distribution (PMAD) capabilities to enable future missions requiring higher power, flexible and reliable power systems. The goals of the mission include demonstration of: 100 Watt distribution to a target electrical load, efficient battery charging in the orbital environment, flexible power system distribution interfaces, adaptation of power system control on orbit, and reliable deployment of solar arrays and antennas utilizing re-settable SMA mechanisms. The power distribution function of the ALBus PMAD system is unique in the total power to target load capability of 100 W, the flexibility to support centralized or point-to-load regulation and ability to respond to fast transient power requirements. Power will be distributed from batteries at 14.8 V, 6.5 A to provide 100 W of power directly to a load. The deployable solar arrays utilize NASA Glenn Research Center superelastic and activated Nitinol(Nickel-Titanium alloy) Shape Memory Alloy (SMA) technology for hinges and a retention and release mechanism. The deployable solar array hinge design features utilization of the SMA material properties for dual purpose. The hinge uses the shape memory properties of the SMA to provide the spring force to deploy the arrays. The electrical conductivity properties of the SMA also enables the design to provide clean conduits for power transfer from the deployable arrays to the power management system. This eliminates the need for electrical harnesses between the arrays and the PMAD system in the ALBus system design. The uniqueness of the SMA retention and release mechanism design is the ability to reset the mechanism, allowing functional tests of the mechanisms prior to flight with no degradation of performance. The project is currently in preparation at the NASA Glenn Research Center for a launch in late calendar year of 2017. The 100 Watt power distribution and dual purpose, re-settable SMA mechanisms introduced several system level challenges due to the physical constraints in volume, mass and surface area of 3-U CubeSats. Several trade studies and design cycles have been completed to develop a system which supports the project objectives. This paper is a report on the results of the system level trade studies and assessments. The results include assessment of options for thermal control of 100 Watts of power dissipation, data from system analyses and engineering development tests, limitations of the 3-U system and extensibility to larger scale CubeSat missions.
Improved instrumentation for monitoring the diurnal and seasonal cycles in the dielectric properties of forest canopies
The design and implementation of a dielectric measurement system that facilitates the automated and continuous in situ monitoring of the dielectric properties of several canopy constituents is presented. This system utilizes the same coaxial line reflection coefficient measurement technique as the portable dielectric probe (PDP) while incorporating several features that facilitate the automated monitoring of canopy dielectric properties. The new system is capable of continuously monitoring the dielectric properties of the canopy constituents in a near-simultaneous fashion. The implementation of a data logger as a user interface has increased the number of measurements that the instrument is able to store in memory while significantly improving system reliability.
Nonvolatile Memory Solution for Near-Term NASA Missions
Nonvolatile memory (NVM) system that could reliably function in extreme environments is one of the most critical components for many spacecrafts being developed for NASA missions to be launched in next four to seven years. NVM supports the computer system in saving and updating critical state data required for a warm restart after power cycling or in case of a power bus failure. It also provides a power independent mass storage capacity for the scientific data gathered by the instruments. In some cases the window for gathering such data is very small and occurs only once in a given mission. Commercially popular and fully developed Flash NVM technology is inappropriate for many reasons such as the limited read write cycles with slower access speeds, radiation intolerance, higher Single Event Upsets (SEU) rates, etc. It is desirable to have an NVM system based upon a robust cell technology making it immune to the SEUs and with sufficient radiation hardness. Availability of such NVM system seems to be still 5 to 10 years in the future. Meanwhile, it is possible to provide an interim hybrid solution by combining the existing rad-hard technologies. Additional information is contained in the original extended abstract.
Design and Development of CubeSat Solar Array Deployment Mechanisms Using Shape Memory Alloys
The Advanced eLectrical Bus (ALBus) project is a technology demonstration mission of a 3U CubeSat with an advanced, digitally controlled electrical power system capability and the novel use of Shape Memory Alloy (SMA) technology for reliable solar array (SA) deployable mechanisms. The ALBus CubeSat deploys four SAs in addition to the body-mounted arrays on each side of the CubeSat. A goal of the mission is to utilize the SMAs being developed at the NASA Glenn Research Center to deploy these SAs. The use of SMAs allows for the ability to test and reset the flight deployment mechanism prior to flight, which reduces the risk of in orbit deployment failures common to CubeSats. As a result, an SMA-driven Retention and Release (R&R) mechanism and an SMA-driven hinge were designed, developed, and integrated for flight. This paper summarizes the development of these mechanisms, types and functionalities of the SMAs used, as well as the lessons learned throughout the process.
Design and Development of CubeSat Solar Array Deployment Mechanisms Using Shape Memory Alloys
The Advanced eLectrical Bus (ALBus) project is a technology demonstration mission of a 3-U CubeSat with an advanced, digitally controlled electrical power system capability and the novel use of Shape Memory Alloy (SMA) technology for reliable solar array deployable mechanisms. The ALBus cubesat has a need to deploy four solar arrays in addition to the body-mounted arrays on each side of the cubesat. A goal of the mission is to utilize the SMAs being developed at the NASA Glenn Research Center to deploy these solar arrays. The use of SMAs allows for the ability to test and reset the flight deployment mechanism prior to flight which reduces the risk of on orbit deployment failures common on cubesats. As a result, an SMA driven Retention and Release mechanism and an SMA driven hinge was designed, developed, and being prepared for flight. This paper summarized the development of these mechanisms, types and functionalities of SMAs used, and lessons learned throughout the process.
Advanced eLectrical Bus (ALBus) CubeSat: From Build to Flight
Advanced eLectrical Bus (ALBus) CubeSat is a technology demonstration mission of a 3-U CubeSat with an advanced digitally controlled electrical power system and novel use of Shape Memory Alloy (SMA) technology for reliable deployable solar array mechanisms. The primary objective was to advance the power management and distribution (PMAD) capabilities to enable future missions requiring more flexible and reliable power systems with higher output power capabilities. Goals included demonstration of 100W distribution to a target electrical load, response to continuous and fast transient power requirements, and exhibition of reliable deployment of solar arrays and antennas utilizing re-settable SMA mechanisms. The power distribution function of the ALBus PMAD system is unique in the total power to target load capability, as power is distributed from batteries to provide 100W of power directly to a resistive load. The deployable solar arrays utilize NASA’s Nickel-Titanium-Palladium-Platinum (NiTiPdPt) high-temperature SMAs for the retention and release mechanism, and a superelastic binary NiTi alloy for the hinge component. The project launched as part of the CubeSat Launch Initiative (CLI) Educational Launch of Nanosatellites (ELaNa) XIX mission on Rocket Lab’s Electron in December 2018. This paper summarizes the final launched design and the lessons learned from build to flight.
Advanced eLectrical Bus (ALBus) CubeSat: From Build to Flight
The Advanced eLectrical Bus (ALBus) CubeSat project is a technology demonstration mission of a 3-U CubeSat with an advanced, digitally controlled electrical power system capability and novel use of Shape Memory Alloy (SMA) technology for reliable deployable solar array mechanisms. The objective of the project was to advance the state of power management and distribution (PMAD) capabilities to enable future missions requiring flexible and reliable power systems with higher output power capabilities. The goals of the mission were to demonstrate 100W distribution to a target electrical load, respond to continuous and fast transient power requirements, and show reliable deployment of solar arrays and antennas utilizing re-settable SMA mechanisms. The power distribution function of the ALBus PMAD system is unique in the total power to target load capability. Power is distributed from batteries to provide 100W of power directly to a resistive load. The deployable solar arrays utilize NASA Glenn Research Center’s Nickel-Titanium-Palladium-Platinum high-temperature SMAs for the retention and release mechanism, and a super-elastic binary NiTi alloy for the hinge component. The deployable solar array hinge design features the utilization of SMA material properties for a dual purpose. First, the hinge uses the super-elastic SMA properties to provide the spring force to deploy the arrays. Second, the electrical conductivity properties of the SMA enables the design to provide clean conduits for power transfer from the deployable arrays to the power management system. This eliminates the need for electrical harnesses between the arrays and the PMAD system in the ALBus system design. The uniqueness of the SMA retention and release mechanism design is the ability to reset the mechanism and reuse the same hardware. This allow functional tests of the mechanisms before flight with no degradation of performance and flying the hardware that is tested. The project launched as part of the CubeSat Launch Initiative Educational Launch of Nanosatellites (ELaNa) XIX mission on Rocket Lab’s Electron in December 2018. This paper summarizes the final launched design of ALBus and lessons learned from the technology and overall project from development through flight.
Surface Control of Cold Hibernated Elastic Memory Self-Deployable Structure
A new class of simple, reliable, lightweight, low packaging volume and cost, self-deployable structures has been developed for use in space and commercial applications. This technology called 'cold hibernated elastic memory' (CHEM) utilizes shape memory polymers (SMP)in open cellular (foam) structure or sandwich structures made of shape memory polymer foam cores and polymeric composite skins. Some of many potential CHEM space applications require a high precision deployment and surface accuracy during operation. However, a CHEM structure could be slightly distorted by the thermo-mechanical processing as well as by thermal space environment Therefore, the sensor system is desirable to monitor and correct the potential surface imperfection. During these studies, the surface control of CHEM smart structures was demonstrated using a Macro-Fiber Composite (MFC) actuator developed by the NASA LaRC and US Army ARL. The test results indicate that the MFC actuator performed well before and after processing cycles. It reduced some residue compressive strain that in turn corrected very small shape distortion after each processing cycle. The integrated precision strain gages were detecting only a small flat shape imperfection indicating a good recoverability of original shape of the CHEM test structure.
A Survey on the Expanding Scope and Interdisciplinary Opportunities for Processing-in-Memory Techniques
Processing-in-Memory (PIM) is emerging as a practical path to overcome the limitations of traditional von Neumann architectures. At its core, PIM systems implement computing primitives such as logic operations and multiply-accumulate acceleration through compute-in-memory, near-memory processing, or hybrid designs. The role of memory cells varies widely across technologies, acting as inputs, outputs, or analog accumulators through bit-lines and sense amplifiers. This diversity creates trade-offs in precision, bandwidth, latency, and programmability, making it difficult to build a unified understanding on the progress of the field. In this survey, we organize recent advances of PIM into three areas. First, we discuss the progress on the architectural optimizations of PIM and its integration with both DRAM and emerging non-volatile memories. Second, we examine how PIM is being used to accelerate key computing domains, including generative AI workloads and high-performance kernels, along with new approaches. Third, we highlight the growing adoption of PIM in computational sciences, where it is being applied to solve interdisciplinary problems such as genome analysis, mRNA quantification, mass spectrometry, quantum circuit simulation, wave modeling, and secure computation. Finally, we synthesize the major challenges that continue to slow PIM adoption, including manufacturing constraints, power delivery, thermal reliability, data consistency, runtime and memory-management coordination, and the difficulty of building portable software abstractions without sacrificing commercial viability. This work provides an updated, structured perspective on PIM’s potential across computing and computational sciences and the barriers that must be solved for it to reach its full impact.
Conceptual design and feasibility evaluation model of a 10 to the 8th power bit oligatomic mass memory. Volume 1: Conceptual design
The oligatomic (mirror) thin film memory technology is a suitable candidate for general purpose spaceborne applications in the post-1975 time frame. Capacities of around 10 to the 8th power bits can be reliably implemented with systems designed around a 335 million bit module. The recommended mode was determined following an investigation of implementation sizes ranging from an 8,000,000 to 100,000,000 bits per module. Cost, power, weight, volume, reliability, maintainability and speed were investigated. The memory includes random access, NDRO, SEC-DED, nonvolatility, and dual interface characteristics. The applications most suitable for the technology are those involving a large capacity with high speed (no latency), nonvolatility, and random accessing.
A Radiation-Tolerant, Low-Power Non-Volatile Memory Based on Silicon Nanocrystal Quantum Dots
Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO2 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled in program/erase threshold voltage swing was seen during 100,000 program and erase cycles. Additional near-term goals for this project include extensive testing for radiation hardness and the development of artificial layered tunnel barrier heterostructures which have the potential for large speed enhancements for read/write of nanocrystal memory elements, compared with conventional flash devices. Additional information is contained in the original extended abstract.
A radiation - tolerant, low - power non - volatile memory based on silicon nanocrystal quantum dots.
Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in Si02 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled.
Theory and design of reliable spacecraft data systems Quarterly progress report, 10 Feb. - 9 May 1970
Permanent memory fault analysis, faults in combinatorial networks, linear machines, and path sensitizing in network analysis for reliable spacecraft data systems
Trends in reliability modeling technology for fault tolerant systems
Developments in reliability modeling for large fault tolerant avionic computing systems are presented. Issues of state size and complexity, fault coverage, and practical computation are addressed. A two-fold developmental effort is described based on the structural and fault coverage modeling approaches. A technique which was successfully applied to an 865 state pure death stationary Markov model is presented. Of particular interest is a short computer program which executes very quickly to produce reliability results of a large state space model. This model also incorporates fault coverage states for processor, memory, and bus line replaceable units. A second structural reliability modeling scheme is aimed at solving nonstationary Markov models. This technique provides the tool required for studying the reliability of systems with nonconstant failure rates and includes intermittent/transient faults, electronic hardware which exhibits decreasing failure rates, and hydromechanical devices which typically have wearout failure mechanisms. Several aspects of fault coverage, including modeling and data measurement of intermittent/transient faults and latent faults, are elucidated and illustrated. The CARE II (computer-aided reliability estimation) coverage is presented and shortcomings to be eliminated are discussed.
Impact of Device Scaling on Deep Sub-micron Transistor Reliability: A Study of Reliability Trends using SRAM
As microelectronics are scaled in to the deep sub-micron regime, users of advanced technology CMOS, particularly in high-reliability applications, should reassess how scaling effects impact long-term reliability. An experimental based reliability study of industrial grade SRAMs, consisting of three different technology nodes, is proposed to substantiate current acceleration models for temperature and voltage life-stress relationships. This reliability study utilizes step-stress techniques to evaluate memory technologies (0.25mum, 0.15mum, and 0.13mum) embedded in many of today's high-reliability space/aerospace applications. Two acceleration modeling approaches are presented to relate experimental FIT calculations to Mfr's qualification data.
Study on advanced information processing system
Issues related to the reliability of a redundant system with large main memory are addressed. In particular, the Fault-Tolerant Processor (FTP) for Advanced Launch System (ALS) is used as a basis for our presentation. When the system is free of latent faults, the probability of system crash due to nearly-coincident channel faults is shown to be insignificant even when the outputs of computing channels are infrequently voted on. In particular, using channel error maskers (CEMs) is shown to improve reliability more effectively than increasing the number of channels for applications with long mission times. Even without using a voter, most memory errors can be immediately corrected by CEMs implemented with conventional coding techniques. In addition to their ability to enhance system reliability, CEMs--with a low hardware overhead--can be used to reduce not only the need of memory realignment, but also the time required to realign channel memories in case, albeit rare, such a need arises. Using CEMs, we have developed two schemes, called Scheme 1 and Scheme 2, to solve the memory realignment problem. In both schemes, most errors are corrected by CEMs, and the remaining errors are masked by a voter.