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At least 55 records · Page 3

Road load simulator tests of the Gould phase 1 functional model silicon controlled rectifier ac motor controller for electric vehicles

The test results for a functional model ac motor controller for electric vehicles and a three-phase induction motor which were dynamically tested on the Lewis Research Center road load simulator are presented. Results show that the controller has the capability to meet the SAE-J227a D cycle test schedule and to accelerate a 1576-kg (3456-lb) simulated vehicle to a cruise speed of 88.5 km/hr (55 mph). Combined motor controller efficiency is 72 percent and the power inverter efficiency alone is 89 percent for the cruise region of the D cycle. Steady state test results for motoring, regeneration, and thermal data obtained by operating the simulator as a conventional dynamometer are in agreement with the contractor's previously reported data. The regeneration test results indicate that a reduction in energy requirements for urban driving cycles is attainable with regenerative braking. Test results and data in this report serve as a data base for further development of ac motor controllers and propulsion systems for electric vehicles. The controller uses state-of-the-art silicon controlled rectifier (SCR) power semiconductors and microprocessor-based logic and control circuitry. The controller was developed by Gould Laboratories under a Lewis contract for the Department of Energy's Electric and Hybrid Vehicle program.

Gourash, F.↗

35 GHz integrated circuit rectifying antenna with 33 percent efficiency

A 35 GHz integrated circuit rectifying antenna (rectenna) has been developed using a microstrip dipole antenna and beam-lead mixer diode. Greater than 33 percent conversion efficiency has been achieved. The circuit should have applications in microwave/millimeter-wave power transmission and detection.

Yoo, T.-W.↗

BOREAS TE-18, 30-m, Radiometrically Rectified Landsat TM Imagery

The BOREAS TE-18 team used a radiometric rectification process to produce standardized DN values for a series of Landsat TM images of the BOREAS SSA and NSA in order to compare images that were collected under different atmospheric conditions. The images for each study area were referenced to an image that had very clear atmospheric qualities. The reference image for the SSA was collected on 02-Sep-1994, while the reference image for the NSA was collected on 21-Jun-1995. the 23 rectified images cover the period of 07-Jul-1985 to 18 Sep-1994 in the SSA and from 22-Jun-1984 to 09-Jun-1994 in the NSA. Each of the reference scenes had coincident atmospheric optical thickness measurements made by RSS-11. The radiometric rectification process is described in more detail by Hall et al. (199 1). The original Landsat TM data were received from CCRS for use in the BOREAS project. The data are stored in binary image-format files. Due to the nature of the radiometric rectification process and copyright issues, these full-resolution images may not be publicly distributed. However, a spatially degraded 60-m resolution version of the images is available on the BOREAS CD-ROM series. See Sections 15 and 16 for information about how to possibly acquire the full resolution data. Information about the full-resolution images is provided in an inventory listing on the CD-ROMs. The data files are available on a CD-ROM (see document number 20010000884), or from the Oak Ridge National Laboratory (ORNL) Distributed Activity Archive Center (DAAC).

Hall, Forrest G.↗

BOREAS TE-18, 60-m, Radiometrically Rectified Landsat TM Imagery

The BOREAS TE-18 team used a radiometric rectification process to produce standardized DN values for a series of Landsat TM images of the BOREAS SSA and NSA in order to compare images that were collected under different atmospheric conditions. The images for each study area were referenced to an image that had very clear atmospheric qualities. The reference image for the SSA was collected on 02-Sep-1994, while the reference image for the NSA was collected on 2 1 Jun-1995. The 23 rectified images cover the period of 07-Jul-1985 to 18-Sep-1994 in the SSA and 22-Jun-1984 to 09-Jun-1994 in the NSA. Each of the reference scenes had coincident atmospheric optical thickness measurements made by RSS-11. The radiometric rectification process is described in more detail by Hall et al. (1991). The original Landsat TM data were received from CCRS for use in the BOREAS project. Due to the nature of the radiometric rectification process and copyright issues, the full-resolution (30-m) images may not be publicly distributed. However, this spatially degraded 60-m resolution version of the images may be openly distributed and is available on the BOREAS CD-ROM series. After the radiometric rectification processing, the original data were degraded to a 60-m pixel size from the original 30-m pixel size by averaging the data over a 2- by 2-pixel window. The data are stored in binary image-format files. The data files are available on a CD-ROM (see document number 20010000884), or from the Oak Ridge National Laboratory (ORNL) Distributed Activity Archive Center (DAAC).

Hall, Forrest G.↗

The delayed rectifier, IKI, is the major conductance in type I vestibular hair cells across vestibular end organs

Hair cells were dissociated from the semicircular canal, utricle, lagena and saccule of white king pigeons. Type I hair cells were identified morphologically based on the ratios of neck width to cuticular plate width (NPR < 0.72) as well as neck width to cell body width (NBR < 0.64). The perforated patch variant of the whole-cell recording technique was used to measure electrical properties from type I hair cells. In voltage-clamp, the membrane properties of all identified type I cells were dominated by a predominantly outward potassium current, previously characterized in semicircular canal as IKI. Zero-current potential, activation, deactivation, slope conductance, pharmacologic and steady-state properties of the complex currents were not statistically different between type I hair cells of different vestibular end organs. The voltage dependence causes a significant proportion of this conductance to be active about the cell's zero-current potential. The first report of the whole-cell activation kinetics of the conductance is presented, showing a voltage dependence that could be best fit by an equation for a single exponential. Results presented here are the first data from pigeon dissociated type I hair cells from utricle, saccule and lagena suggesting that the basolateral conductances of a morphologically identified population of type I hair cells are conserved between functionally different vestibular end organs; the major conductance being a delayed rectifier characterized previously in semicircular canal hair cells as IKI.

NASA Discipline Number 40-99↗

Microrectenna: A Terahertz Antenna and Rectifier on a Chip

A microrectenna that would operate at a frequency of 2.5 THz has been designed and partially fabricated. The circuit is intended to be a prototype of an extremely compact device that could be used to convert radio-beamed power to DC to drive microdevices (see Figure 1). The microrectenna (see Figure 2) circuit consists of an antenna, a diode rectifier and a DC output port. The antenna consists of a twin slot array in a conducting ground plane (denoted the antenna ground plane) over an enclosed quarter-wavelength-thick resonant cavity (denoted the reflecting ground plane). The circuit also contains a planar high-frequency low-parasitic Schottky-barrier diode, a low-impedance microstrip transmission line, capacitors, and contact beam leads. The entire 3-D circuit is fabricated monolithically from a single GaAs wafer. The resonant cavity renders the slot radiation pattern unidirectional with a half-power beam width of about 65. A unique metal mesh on the rear of the wafer forms the backplate for the cavity but allows the GaAs to be wet etched from the rear surface of the twin slot antennas and ground plane. The beam leads protrude past the edge of the chip and are used both to mount the microrectenna and to make the DC electrical connection with external circuitry. The antenna ground plane and the components on top of it are formed on a 2- m thick GaAs membrane that is grown in the initial wafer MBE (molecular beam epitaxy) process. The side walls of the antenna cavity are not metal coated and, hence, would cause some loss of power; however, the relatively high permittivity (epsilon=13) of the GaAs keeps the cavity modes well confined, without the usual surface-wave losses associated with thick dielectric substrates. The Schottky-barrier diode has the usual submicron dimensions associated with THz operation and is formed in a mesa process above the antenna ground plane. The diode is connected at the midpoint of a microstrip transmission line, which is formed on 1- m-thick SiO (permittivity of 5) laid down on top of the GaAs membrane. The twin slots are fed in phase by this structure. To prevent radio-frequency (RF) leakage past the slot antennas, low-loss capacitors are integrated into the microstrip transmission line at the edges of the slots. The DC current- carrying lines extend from the outer edges of the capacitors, widen approaching the edges of the chip, and continue past the edges of the chip to become the beam leads used in tacking down the devices. The structure provides a self-contained RF to DC converter that works in the THz range.

Siegel, Peter↗

Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rapture and Single-Event Burnout : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. TheSCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition/standards and requirements.The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.

Single Event Gate Rupture↗

Projection of Stabilized Aerial Imagery Onto Digital Elevation Maps for Geo-Rectified and Jitter-Free Viewing

As imagery is collected from an airborne platform, an individual viewing the images wants to know from where on the Earth the images were collected. To do this, some information about the camera needs to be known, such as its position and orientation relative to the Earth. This can be provided by common inertial navigation systems (INS). Once the location of the camera is known, it is useful to project an image onto some representation of the Earth. Due to the non-smooth terrain of the Earth (mountains, valleys, etc.), this projection is highly non-linear. Thus, to ensure accurate projection, one needs to project onto a digital elevation map (DEM). This allows one to view the images overlaid onto a representation of the Earth. A code has been developed that takes an image, a model of the camera used to acquire that image, the pose of the camera during acquisition (as provided by an INS), and a DEM, and outputs an image that has been geo-rectified. The world coordinate of the bounds of the image are provided for viewing purposes. The code finds a mapping from points on the ground (DEM) to pixels in the image. By performing this process for all points on the ground, one can "paint" the ground with the image, effectively performing a projection of the image onto the ground. In order to make this process efficient, a method was developed for finding a region of interest (ROI) on the ground to where the image will project. This code is useful in any scenario involving an aerial imaging platform that moves and rotates over time. Many other applications are possible in processing aerial and satellite imagery.

Ansar, Adnan I.↗

Investigation of Rectifier Diode Failures in the NEXT-C Power Processing Unit

NASA's Evolutionary Xenon Thruster-Commercial (NEXT-C) project is tasked with developing flight electric propulsion systems, including both thrusters and power processing units (PPUs). In 2018, the beam supply in a NEXT-C engineering prototype PPU experienced an output rectifier diode failure during development thermal-vacuum testing. A failure investigation led by NASA GRC identified the root cause of the failure as a thermal runaway caused by increased reverse recovery losses in the diodes when the PPU was run at its maximum operating temperature. Significant reverse recovery performance variations were identified in diodes with the same part number but manufactured by different vendors. The failure investigation was able to collect evidence of the increased reverse recovery and replicate the diode failures in a controlled laboratory environment.

George L Thomas↗

Investigation of Rectifier Diode Failures in the NEXT-C Power Processing Unit

NASA's Evolutionary Xenon Thruster-Commercial (NEXT-C) project is tasked with developing flight electric propulsion systems, including both thrusters and power processing units (PPUs). In 2018, the beam supply in a NEXT-C engineering prototype PPU experienced an output rectifier diode failure during development thermal-vacuum testing. A failure investigation led by NASA GRC identified the root cause of the failure as a thermal runaway caused by increased reverse recovery losses in the diodes when the PPU was run at its maximum operating temperature. Significant reverse recovery performance variations were identified in diodes with the same part number but manufactured by different vendors. The failure investigation was able to collect evidence of the increased reverse recovery and replicate the diode failures in a controlled laboratory environment.

George L. Thomas↗

Precision full-wave rectifier

Simplified circuit uses one operational amplifier and two precision resistors. The amplifier is operated open loop for switching and closed loop for linear gain, both simultaneously.

Deboo, G. J.↗