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Low Thermal Resistance (0.5 K/W) Ga 2 O 3 Schottky Rectifiers With Double-Side Packaging
The low thermal conductivity of Ga 2 O 3 has arguably been the most serious concern for Ga 2 O 3 power and RF devices. Despite many simulation studies, there is no experimental report on the thermal resistance of a large-area, packaged Ga 2 O 3 device. This work fills this gap by demonstrating a 15-A double-side packaged Ga 2 O 3 Schottky barrier diode (SBD) and measuring its junction-to-case thermal resistance (R θJC ) in the bottom-side- and junction-side-cooling configurations. The R θJC characterization is based on the transient dual interface method, i.e., JEDEC 51-14 standard. The R θJC of the junction- and bottom-cooled Ga 2 O 3 SBD was measured to be 0.5 K/W and 1.43 K/W, respectively, with the former R θJC lower than that of similarly-rated commercial SiC SBDs. This low R θJC is attributable to the heat extraction directly from the Schottky junction instead of through the Ga 2 O 3 chip. Here, the R θJC lower than that of commercial SiC devices proves the viability of Ga 2 O 3 devices for high-power applications and manifest the significance of proper packaging for their thermal management.
1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier
Here, this work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 mΩ∙ cm 2 . Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.
Single-stage transmitter for wireless power transfer
A single-stage transmitter for wireless power transfer is provided. The transmitter includes a rectifier stage and an inverter stage sharing a first phase leg. The rectifier stage further includes a rectifying leg including two diodes connected in series, and a boost inductor coupling the first phase leg and the rectifying leg to an input port. The inverter stage further includes a second phase leg. Each phase leg includes two switches connected in series. The first and second phase legs are coupled to an output port. A bus capacitor is coupled across the first phase, second phase, and rectifying legs. A controller is programmed to determine first and second parameters, based on an output power at the output port, to simultaneously control the rectifier stage and the inverter stage to maintain constant bus voltage and achieve high power factor and low total harmonic distortion at the input port.
Analysis and Control of a Three-Port Converter with High-Frequency AC Link for Hybrid Unmanned/Autonomous Aerial Vehicles
In this study, a three-port resonant converter with a high-frequency isolation link for hybrid unmanned/autonomous aerial vehicle (UAV/AAV) applications is analyzed. The rectified engine-generator set output supplies the first input ports while the other is connected to a battery energy storage system. Input ports consist of half-bridge high-frequency inverters, whereas output port utilizes a semi-bridgeless active rectifier. This rectifier is formed by replacing rectifier low-side diodes with active switching devices. A phase-shift duty-cycle control is implemented for switching signals to regulate the power share and flow between ports. The proposed control system implemented achieves zero voltage switching (ZVS), reduces switching losses, and minimum current flow optimization ensures regulation in a wide range of output power. Compared to the existing bidirectional pulse width modulation (PWM) converters, the proposed system decreases the number of power conversion stages and provides centralized control without needing communications between the ports. The proposed control technique operating in closed-loop control achieves the power flow between ports under various load conditions. Finally, theoretical analysis demonstrates the proposed converter’s viability and laboratory experimental validations at 500 W full power.
Optical and photoelectric properties of surface barrier diodes based on n- Hg3In2Te6 crystals
The high radiation resistance of Hg3In2Te6 (MIT) single crystals to large doses of ionizing radiation makes devices quite attractive. Such a feature of the crystal structure has not only important advantages, but also causes serious technological difficulties in doping and controlling the specific resistance within the required limits and type of conductivity of single crystals. These technological difficulties create serious problems when creating structures with a potential barrier, especially with a p-n junction. At the moment, there are no publications on the creation of a p-n junction based on MIT. The only alternative is to create a potential barrier such as a Schottky diode or a metal-dielectric-semiconductor structure. This limits the use of MIT to produce, for example, rectifier diodes that can operate at relatively high reverse bias voltages. The typical resistivity of single crystals of MIT of n-type conductivity, which are used for the manufacture of diodes and photodiodes, is approximately equal to ρ≈103-104 Ω×cm. Such a specific resistance leads to a relatively large resistance of the neutral part of the single crystal, which in turn limits the direct currents of the rectifier diodes and significantly limits an important parameter of photodiodes - the dynamic range of the watt-ampere characteristic. This problem arises from the relatively high series resistance of the substrate. For rectifier diodes, this relatively large series resistance leads to a significant forward bias voltage drop, which reduces both the rectification factor and the amount of rectified current. We have already created diodes and photodiodes on Cr/MIT/Cr single crystals with a specific resistance of ρ≈103-104 Ω×cm. The diodes had relatively small dark currents but had the disadvantage of a relatively large specific resistance of the substrate, which we have already discussed above [1,2,3].
Chemical Sensing and Chemoresponsive Pumping with Conical-Pore Polymeric Membranes
Synthetic membranes containing asymmetrically shaped pores have been shown to rectify the ionic current flowing through the membrane. Ion-current rectification means that such membranes produce nonlinear current–voltage curves analogous to those observed with solid-state diode rectifiers. In order to observe this ion-current rectification phenomenon, the asymmetrically shaped pores must have pore-wall surface charge. Pore-wall surface charge also allows for electroosmotic flow (EOF) to occur through the membrane. We have shown that, because ion-current is rectified, EOF is likewise rectified in such membranes. This means that flow through the membrane depends on the polarity of the voltage applied across the membrane, one polarity producing a higher, and the opposite producing a lower, flow rate. As is reviewed here, these ion-current and EOF rectification phenomena are being used to develop new sensing technologies. Results obtained from an ion-current-based sensor for hydrophobic cations are reviewed. In addition, ion-current and EOF rectification can be combined to make a new type of device—a chemoresponsive nanofluidic pump. This is a pump that either turns flow on or turns flow off, when a specific chemical species is detected. Results from a prototype Pb 2+ chemoresponsive pump are also reviewed here.
Harmonics and Stability Evaluation of Converter-Interfaced Combined Heat and Power Units
Grid integration of medium-sized combined heat and power (CHP) units is challenging due to strict grid codes and conventional generators lack of control flexibility to meet these grid codes. Adding a two-stage ac-dc-ac power electronics interface between the generator and the utility grid will accelerate the interconnection process of CHP units. For the dc-ac stage, a voltage source converter (VSC) has been widely used as a grid-tied inverter because of its fast control and low total harmonics distortion (THD). In this paper, several topologies of generator-side rectifiers for ac-dc power conversion are explored and analyzed. The harmonics impact of various rectifiers on the CHP generator are evaluated. The overall cost of the electrical system, when using various types of rectifiers, is assessed and the VSC back-to-back converter interface configuration is found to be optimal. The overall system stability is also examined using small-signal impedance analysis to assess potential instability issues at the system level.
Erosion of high-Z refractory coatings for helicon plasma source window
Proto-MPEX (Materials Plasma Exposure eXperiment), a linear plasma device (LPD), using a high power radio frequency (RF) (⩾100 kW, 13.56 MHz) helicon plasma source, has suffered RF sheath-induced window erosion. The sputtered impurities from the window surface transport toward the downstream target affecting plasma-material interaction studies. The rectified sheath voltage formed was high enough to cause window erosion by light ions due to its low-Z components (e.g. Si 3 N 4 and AlN). Hence, we are proposing impurity mitigation strategies, which involve the application of a Faraday screen to lower the rectified sheath voltage and the application of high-Z refractory coatings on the existing window plasma-facing surface. In this work, we report the erosion of two different coatings, i.e., tantalum oxide (Ta 2 O 5 ) and hafnium oxide (HfO 2 ) on a silicon nitride (Si 3 N 4 ) window material under conditions of low-energy deuterium (D) ion impact, well below the Ta 2 O 5 sputtering energy threshold (i.e. 250 eV). The test samples were RF-biased and exposed to a high D-ion fluence (∼10 26 m −2 ) in Plasma Interaction with Surface Component Experimental Station (PISCES-A) LPD. The experimentally measured sputtering yields of the high-Z refractory coatings below the sputtering energy threshold of Ta 2 O 5 indicate an increased erosion due to the plasma impurities, especially due to oxygen. Improving the vacuum level could reduce the oxygen impurities and increase the lifespan of the coated helicon window for plasma operation. Post-surface analysis indicates no preferential erosion of oxygen or enrichment of the high-Z surface component. This is likely due to an effective energy transfer from the impurity ion for sputtering of the high-Z component in the coating. With the reduced rectified sheath voltage at the window surface and improved vacuum conditions, the proposed high-Z refractory coatings offer a promising solution for reducing window erosion in future MPEX plasma operations at ORNL.
Radiofrequency sheath rectification on WEST: application of the sheath-equivalent dielectric layer technique in tokamak geometry *
Radiofrequency sheath rectification is a phenomenon relevant to the operation of Ion Cyclotron Range of Frequencies (ICRFs) actuators in tokamaks. Techniques to model the sheath rectification on 3D ICRF antenna geometries have only recently become available (Shiraiw et al 2023 Nucl. Fusion 63 026024; Beers et al 2021 Phys. Plasmas 28 093503). In this work, we apply the 'sheath-equivalent dielectric layer' technique, used previously only on linear devices (Beers et al 2021 Phys. Plasmas 28 103508), in tokamak geometry, computing rectified sheath potentials on the WEST ICRF antenna. Advancing the state of the art in sheath rectification modeling, we compute the sheath potentials not just on the limiters, but also on the Faraday Screen bars. The calculations show a peak rectified DC potential of 300 V on the limiters and 500 V on the Faraday screen. Assuming a typical sputtering yield curve, the RF sheath rectification increases the sputtering yield from the limiters by a factor of 2.6 w.r.t. the sputtering due to the non-rectified thermal sheath.
Direct Power Control of Back to Back Modular Multilevel Converter with Advanced Grid Support Functions for Grid Forming Application
Possibility of using back-to-back modular multilevel converter system with a direct power control architecture has been investigated in this paper. The rectifier side is controlled to be in grid following mode whereas the inverter side is controlled in grid forming mode. Both the sides’ local controllers use Lyapunov energy function based architecture to accomplish the objective of active and reactive power control as well as maintaining a fixed user defined voltage over the dc bus on the rectifier side. Therefore, the proposed direct power control architecture has embedded dc bus control architecture to maintain fixed user defined value of the capacitors. Similar architecture is implemented on the inverter side to accomplish either voltage control during grid forming or power control during grid following. Advanced grid support functionalities based on IEEE-1547-2018 is implemented and utilized to generate the reference values for either the rectifier or the inverter sides. The overall system is modeled based on MATLAB/Simulink and PLECS domain and various important case studies to verify the efficacy of the overall system has been presented.
Intercell Power Transformer for Power Balancing of Polyphase Wireless Power Transfer Systems
Polyphase wireless power transfer (PWPT) systems experience receiver side imbalances in misaligned conditions. This paper proposes a method for power balancing in PWPT systems, specifically addressing the challenges caused by receivers coil unequal coupling. An intercell power transformer (IPT) is introduced at the receiver side to mitigate the effects of coil mismatch. Simulations of the PWPT system incorporating IPT demonstrate its effectiveness in enhancing power distribution. For voltage-fed rectifiers (VFR), the IPT increases the conduction angle, resulting in higher output power. In current- fed rectifiers (CFR), the IPT promotes uniform power sharing among rectifiers, thereby reducing electrical stress on semiconductor devices and passive components. Simulation results indicate that, under coil misalignment, the IPT improves output power by approximately 49% for VFRs and 44% for CFRs compared to conventional PWPT systems without IPT.