Effects of impurities on radiation damage of silicon solar cells
Impurities effects on radiation damage of silicon solar cells
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Impurities effects on radiation damage of silicon solar cells
Calculations of the equilibrium conditions for continuous radiation damage and thermal annealing are reported. The calculations are based on a thermochemical model developed to analyze the incorporation of point imperfections in GaAs, and modified by introducing the radiation to produce native lattice defects rather than high-temperature and arsenic atmospheric pressure. The concentration of a set of defects, including vacancies, divacancies, and impurity vacancy complexes, are calculated as a function of temperature. Minority carrier lifetimes, short circuit current, and efficiency are deduced for a range of equilibrium temperatures. The results indicate that GaAs solar cells could have a mission life which is not greatly limited by radiation damage.
Electron radiation damage to cadmium sulfide solar cells
Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.
South Atlantic Anomaly of the geomagnetic field plays a dominant role in where radiation damage occurs in near Earth orbits. The historic and recent variations of the geomagnetic field in the South Atlantic are used to estimate the extent of the South Atlantic Anomaly until the year 2000. This projection indicates that radiation damage to spacecraft and humans in space will greatly increase and cover a much larger geographic area than present.
X-ray diffraction analysis of radiation damaged rock
The Mars Observer Gamma-Ray Spectrometer (MO GRS) was designed to measure gamma-rays emitted by the Martian surface. This gamma-ray emission is induced by energetic cosmic-ray particles penetrating the Martian surface and producing many secondary particles and gamma rays. The MO GRS consisted of an high-purity germanium (HPGe) detector with a passive cooler. Since radiation damage due to permanent bombardment of energetic cosmic ray particles (with energies up to several GeV) was expected for the MO GRS HPGe crystal, studies on radiation damage effects of HPGe crystals were carried on earth. One of the HPGe crystals (paradoxically called FLIGHT) was similar to the MO GRS crystal. Both detectors, MO GRS and FLIGHT, contained closed-end coaxial n-type HPGe crystals and had the same geometrical dimensions (5.6 x 5.6 cm). Many other parameters, such as HV and operation temperature, differed in space and on earth, which made it somewhat difficult to directly compare the performance of both detector systems. But among other detectors, detector FLIGHT provided many useful data to better understand radiation damage effects.
The effects of radiation damage on modern electronic and optoelectronics is discussed.
High-purity germanium (HPGe) detectors will be used in future space missions for gamma-ray measurements and will be subject to interactions with energetic particles. To simulate this process, several large-volume n-type HPGe detectors were incrementally exposed to a particle fluence of up to 10 to the 8th protons/sq cm (proton energy: 1.5 GeV) at different operating temperatures (90 to 120 K) to induce radiation damage. Basic scientific and engineering data on detector performance were collected. During the incremental irradiation, the peak shape produced by the detectors showed a significant change from a Gaussian shape to a broad complex structure. After the irradiation, all detectors were thoroughly characterized by measuring many parameters. To remove the accumulated radiation damage, the detectors were stepwise-annealed at temperatures below 110 C, while kept in their specially designed cryostats. This study shows that n-type HPGe detectors can be used in charged-particle environments as high-energy resolution devices until a certain level of radiation damage is accumulated and that the damage can be removed at moderate annealing temperatures and the detector returned to operating condition.
Impurity effect on radiation damage of silicon solar cells - tendency of boron atoms in silicon to create recombination centers
Solar cell radiation damage during 416.8 days in synchronous orbit on satellite ATS 1, discussing radiation shields
The progress and status of efforts to increase the end-of-life efficiency of solar cells for space use is assessed. High efficiency silicon solar cells, silicon solar cell radiation damage, GaAs solar cell performance and radiation damage and 30 percent devices are discussed.
The geographic limits of the South Atlantic Anomaly, as defined by radiation damage, are compared to contours of geomagnetic total field intensity, as defined by the 1995 IGRF, for the present and recent past. The most likely secular variation of the geomagnetic field is estimated and used to extrapolate the geomagnetic field to the year 2100. This indicates that radiation damage to spacecraft and humans in space will likely increase and to cover a much larger geographic area.
Solar cell resistant to radiation damage - silicon p-n junction
Radiation damage to satellite solar cells when shielded to various degrees, stressing silicon junction cells
Impurity effects on radiation damage in silicon solar cells, relating acceptor or donor to diffusion length in base region
Thermal annealing characteristics of electron radiation damage in p-channel MOSFET, noting time and temperature dependence and activation energy
The ATS 6 solar cell radiation damage experiment data through 2 1/3 years of synchronous orbit operation are presented. Comparisons are made of the performances of the 13 different types of solar cell/cover configurations, including solar cell and cover thickness variations, base resistivity variation, new cover processes and materials, and the COMSAT violet cell. These performances are also compared to the performance of the LES 6 solar cell experiment, the ATS 6 main solar arrays, and laboratory spectrum electron irradiations. It is found that the cells of the ATS 6 experiment generally performed as expected through 6 to 9 months in orbit, but that at 2 1/3 years they were severely degraded in current. The short circuit current degradation after 2 1/3 years in orbit appears to exhibit an anomalous additional degradation of 5 to 9 percent over what was experienced in synchronous orbit operation.