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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Thermal transistor and thermometer based on Coulomb-coupled conductors

We study a three-terminal setup consisting of a single-level quantum dot capacitively coupled to a quantum point contact. The point contact connects to a source and drain reservoir while the quantum dot is coupled to a single base reservoir. This setup has been used to implement a noninvasive, nanoscale thermometer for the bath reservoir by detecting the current in the quantum point contact. Here, we demonstrate that the device can also be operated as a thermal transistor where the average (charge and heat) current through the quantum point contact is controlled via the temperature of the base reservoir. We characterize the performances of this device both as a transistor and a thermometer and derive the operating condition maximizing their respective sensitivities. Furthermore, the present analysis is useful for the control of charge and heat flow and high precision thermometry at the nanoscale.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Quantum States Probed By Temperature Dependence Capacitance-Voltage Measurements For InP/GaAs Type-II Ultrathin Quantum Well

We report on the temperature dependent capacitance-voltage measurements on InP/GaAs ultrathin quantum well (QW). We observe a peak in apparent carrier distribution (ACD) profile at around the geometrical position of the QW. Peak value of the ACD profile increases, while it's width decreases with reducing temperature indicating that the peak in ACD is due to the accumulation of two dimensional electrons occupying the quantum states in ultrathin QW.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Determination of energy scales in few-electron double quantum dots

The capacitive couplings between gate-defined quantum dots and their gates vary considerably as a function of applied gate voltages. The conversion between gate voltages and the relevant energy scales is usually performed in a regime of rather symmetric dot-lead tunnel couplings strong enough to allow direct transport measurements. Unfortunately, this standard procedure fails for weak and possibly asymmetric tunnel couplings, often the case in realistic devices. We have developed methods to determine the gate voltage to energy conversion accurately in the different regimes of dot-lead tunnel couplings and demonstrate strong variations of the conversion factors. Our concepts can easily be extended to triple quantum dots or even larger arrays.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

Hole Spin Qubits in Germanium

Holes in germanium-rich heterostructures provide a compelling alternative for achieving spin based qubits compared to traditional approaches such as electrons in silicon. In this project, we addressed the question of whether holes in Ge/SiGe quantum wells can be confined into laterally defined quantum dots and made into qubits. Through this effort, we successfully fabricated and operated single-metal-layer quantum dot devices in Ge/SiGe in multiple devices. For single quantum dots, we measured the capacitances of the quantum dot to the surface electrodes and find that they reasonably compare to expected values based on the electrode dimensions, suggested that we have formed a lithographic quantum dot. We also compare the results to detailed self-consistent calculations of the expected potential. Finally, we demonstrate, for the first time, a double quantum dot in the Ge/SiGe material system.

36 MATERIALS SCIENCE↗
DOE OSTI2018

A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices

Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a wide host of quantum phases. Capacitance spectroscopy demonstrates a technique that allows one to directly probe the density of states of such two-dimensional electron systems. Here, we present a measurement and fabrication scheme that builds on capacitance spectroscopy and allows for the independent control of density and periodic potential strength imposed on a two-dimensional electron gas. We characterize disorder levels and (in)homogeneity and develop and optimize different gating strategies at length scales where interactions are expected to be strong. A continuation of these ideas might see to fruition the emulation of interaction-driven Mott transitions or Hofstadter butterfly physics

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Stochastic thermodynamic cycles of a mesoscopic thermoelectric engine

Here, we analyze a steady-state thermoelectric engine, whose working substance consists of two capacitively coupled quantum dots. One dot is tunnel-coupled to a hot reservoir serving as a heat source, the other one to two electrically biased reservoirs at a colder temperature, such that work is extracted under the form of a steady-state current against the bias. In single realizations of the dynamics of this steady-state engine autonomous, four-stroke cycles can be identified. The cycles are purely stochastic, in contrast to mechanical autonomous engines which exhibit self-oscillations. In particular, these cycles fluctuate in direction and duration and occur in competition with other spurious cycles. Using a stochastic thermodynamic approach, we quantify the cycle fluctuations and relate them to the entropy produced during individual cycles. We identify the cycle mainly responsible for the engine performance and quantify its statistics with tools from graph theory. We show that such stochastic cycles are made possible because the work extraction mechanism is itself stochastic instead of the periodic time dependence in the working-substance Hamiltonian which can be found in conventional mechanical engines. Our investigation brings new perspectives about the connection between cyclic and steady-state engines.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Strong-coupling quantum dot microscope

Here, we report the development and fabrication of a novel cryogenic instrument, a scanning quantum dot microscope (SQDM), capable of positioning a quantum dot to within tunneling range of a sample surface. The microscope is strong-coupling in the sense that electron wavefunctions in the quantum dot can directly overlap with electron wavefunctions in the sample, in contrast to probes based on electric-field coupling. The SQDM consists of a sharp glass probe with two asymmetric electrodes leading to an aluminum quantum dot at the apex. One electrode is capacitively coupled to the quantum dot, while the other lead is connected to the dot via a tunneling junction. A charge sensing circuit constructed from a high-electron-mobility transistor is attached to the capacitance lead to measure the charge state of the dot. The last key feature of the design is a tilted-apex geometry. This design feature, in conjunction with the capacitive sensing scheme, results in a robust quantum-dot probe capable of operating within angstrom distances of the sample surface while protecting the single tunnel junction responsible for electron transport onto the quantum dot. We demonstrate that our instrument can detect single-electron tunneling events and can also be operated as a standard scanning tunneling microscope capable of nanometer-scale resolution of the surface topography.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Selenization of Sb{sub 2}Se{sub 3} absorber layer: An efficient step to improve device performance of CdS/Sb{sub 2}Se{sub 3} solar cells

Sb{sub 2}Se{sub 3} appeared as a very promising solar absorber because of their attractive material, optical and electrical properties. Previously, we reported thermal evaporated superstrate CdS/Sb{sub 2}Se{sub 3} solar cell achieving 1.9% efficiency. In this letter, we improved device performance to 3.7% (Voc = 0.335 V, Jsc = 24.4 mA/cm{sup 2}, and FF = 46.8%) by an additional selenization step. Careful external quantum efficiency, capacitance-voltage profiling, and photoresponse study indicated selenization probably compensated selenium loss during thermal evaporation, reducing V{sub Se} associated recombination loss and improving device performance.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions

GaAs light-emitting (LED) and HEMT structures with δ-doped regions, InGaAs/GaAs quantum wells, and surface layers of InAs/GaAs quantum dots were studied by means of the electrochemical capacitance- voltage profiling technique. The concentration depth profiles of free charge carriers were obtained. Charges accumulated in quantum wells and quantum dots, as well as the doping levels of the emitter and δ layers were determined. The band structure and free carrier density distribution over the depth of the samples with different quantum well geometry were simulated. The specific features of electrochemical capacitance- voltage profiling in different heterostructure types are analyzed. A method of integration of capacitance- voltage curves at each etching stage was suggested. This method provides the efficient separation of responses from closely located layers, particularly the quantum well and δ layer.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Mechanical vibrations induced resonant breakdown of the Coulomb blockade

Influence of forced mechanical vibrations of a suspended single-electron transistor on electron tunneling through the quantum dot limited by the Coulomb blockade is investigated. It is shown that mechanical oscillations of the quantum dot lead to the Coulomb blockade breakdown, shown in sharp resonant peaks in the transistor conductance dependence on the excitation frequency at values corresponding to the mechanical oscillations eigen modes. The observed effect is presumably connected with oscillations of the mutual electrical capacitances between the quantum dot and surrounding electrodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

The study of quantum efficiency in PIN photodiodes in terms of temperature and capacitive effects under non-uniform illumination conditions

In this article the impacts of quantum efficiency and bandwidth of PIN photodiodes under non-uniform illumination conditions are investigated. An absorption region is divided into the number of arbitrary layers and the continuity equations for each layer are solved with assuming that the carrier’s drift velocity is constant in each layer. Also the impact of transit time and capacitive effects of bandwidth were studied with considering the bias voltage, width of absorption region and temperature. The results show that with considering the capacitive effects, the bandwidth is increased by increase in temperature and bias voltage. We observe the effect of incident optical radiation from two n and p sides and also its impact on bandwidth and quantum efficiency. The results show more impact of radiation from n region compared to p region.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Anomalously strong pinning of the filling factor {nu}=2 in epitaxial graphene

We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 10{sup 10} in the Hall resistance-quantization measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Engineered MXene quantum dots for micro-supercapacitors with excellent capacitive behaviors

Micro-supercapacitors (MSCs) have drawn tremendous attention as promising candidates to power miniaturized portable/wearable electronics, but they still suffer from unsatisfactory electrochemical performance (e.g., insufficient energy density, mediocre rate capability), thus impeding their widespread applications. Here, a synergistic surface and structure engineering strategy achieved by downsizing to quantum dot scale, doping of heteroatoms, and introducing defects and functional groups is proposed to regulate the physicochemical properties of Ti 3 C 2 T x MXene. Encouragingly, the resulting MSCs based on defect-rich nitrogen-doped Ti 3 C 2 T x quantum dots (QDs) possess excellent electrochemical performance as demonstrated by large operating voltage (3.0 V in ionic liquid and 1.0 V in aqueous electrolyte), perfect rectangular CV shape even at 1000 V·s -1 , high volumetric capacitance of 33.1 F·cm -3 , and superior cycling stability after 10000 cycles. By employing experimental characterizations and density functional theory calculations, the remarkable performance of the MSCs is mainly due to the special chemical states as well as the unique surface and structural features of Ti 3 C 2 T x QDs, which offer abundant active sites, shorten ion diffusion pathways, promote ion/electron transports, and provide enhanced capacitance. Finally, this work provides a new strategy for the design of high-performance MSCs and a reference for the applications of MXene QDs in other energy-related fields.

42 ENGINEERING↗
DOE OSTI2011

Temperature Dependent Capacitance-Voltage And Deep Level Transient Spectroscopy Study Of Self-Assembled Ge Quantum Dots Embedded In P-type Silicon

Temperature dependent Capacitance-Voltage (TCV) and Deep Level Transient Spectroscopy (DLTS) techniques were used to study how Ge Quantum Dots (QDs) embedded in Silicon trap charge. Atomic Force Microscopy (AFM) is used to obtain the density of QDs, which is in the order of 3x10{sup 11} cm{sup -2}. Three shallow levels, with activation energies of 40, 65 and 90 meV, and densities around 10{sup 16} cm{sup -3}, are found and are related to Boron. Four deep levels, with activation energies of 110, 150, 330 and 380 meV, and densities between 2x10{sup 15} cm{sup -3} and 5x10{sup 15} cm{sup -3}, are also found. TCV results suggest they are related to the Ge QDs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Reduced defect density at the CZTSSe/CdS interface by atomic layer deposition of Al{sub 2}O{sub 3}

The greatest challenge for improving the power conversion efficiency of Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe)/CdS/ZnO thin film solar cells is increasing the open circuit voltage (V{sub OC}). Probable leading causes of the V{sub OC} deficit in state-of-the-art CZTSSe devices have been identified as bulk recombination, band tails, and the intertwined effects of CZTSSe/CdS band offset, interface defects, and interface recombination. In this work, we demonstrate the modification of the CZTSSe absorber/CdS buffer interface following the deposition of 1 nm-thick Al{sub 2}O{sub 3} layers by atomic layer deposition (ALD) near room temperature. Capacitance-voltage profiling and quantum efficiency measurements reveal that ALD-Al{sub 2}O{sub 3} interface modification reduces the density of acceptor-like states at the heterojunction resulting in reduced interface recombination and wider depletion width. Indications of increased V{sub OC} resulting from the modification of the heterojunction interface as a result of ALD-Al{sub 2}O{sub 3} treatment are presented. These results, while not conclusive for application to state-of-the-art high efficiency CZTSSe devices, suggest the need for further studies as it is probable that interface recombination contributes to reduced V{sub OC} even in such devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

On the influence of polarization effects in predicting the interfacial structure and capacitance of graphene-like electrodes in ionic liquids

The electric double layer (C{sub D}) and electrode quantum (C{sub Q}) capacitances of graphene-based supercapacitors are investigated using a combined molecular dynamics and density functional theory approach. In particular, we compare an approach that includes electronic polarization to one that is polarization-free by evaluating both C{sub D} and C{sub Q} using [EMIM][BF{sub 4}] ionic liquid as a model electrolyte. Our results indicate that the inclusion of polarization effects can yield higher C{sub D} values—in this study by up to 40% around ±2 V—which we attribute primarily to the presence of charge smearing at the electrode-electrolyte interface. On the other hand, we find that the polarization-induced distortion of the electronic structure of graphene does not noticeably alter the predicted C{sub Q}. Our analysis suggests that an accurate description of the spatial charge distribution at the graphene interface due to polarization is necessary to improve our predictive capabilities, though more notably for C{sub D}. However, the conventional polarization-free approximation can serve as an efficient tool to study trends associated with both the C{sub Q} and C{sub D} at the interface of various graphene-like materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Quantum dot microscope apparatus comprising a nanoscale semiconductor on the tip of a fiber, a tunneling electrical lead and a capacitive electrical lead on the fiber

A quantum dot microscope apparatus is provided. A further aspect employs a tilted or tapered end or tip on a microscopic probe. Another aspect of the present apparatus employs a probe including a quantum dot with only one tunneling lead connected to a power source. A manufacturing aspect includes creating a tapered or asymmetrically shaped specimen-facing end of a probe where a quantum dot is located on the end. A further manufacturing aspect includes using focused ion-beam milling to create a tip or end of a quantum dot microscope probe.

Tessmer, Stuart Holden↗
DOE OSTI2013

Quantum self-consistent calculation of the differential capacitance of a semiconductor film

A fast scheme for calculating the surface differential capacitance of a semiconductor film with an ohmic contact on the rear side is proposed within the self-consistent solution of the Schroedinger and Poisson equations. The method is considered using germanium as an example. Comparison with the results of the phenomenological calculation revealed the specifics of size-quantization effects on the capacitance-voltage characteristic of the film.

36 MATERIALS SCIENCE↗