Solid state bistable power switch study
Feasibility of transforming solid state switches into high current resettable fuses
Bartko, J.↗
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Solid state bistable power switch
Tin and copper provide high current and switching time capabilities for high-current resettable fuses. They show the best performance for trip current and degree of reliability, and have low coefficients of thermal expansion.
Bartko, J.↗
Spark gap power switching for conical theta- pinch plasma gun
Air spark gap to switch stored charge in LC circuit, using auxiliary triggering circuit to clamp magnetic flux
Kuswa, G.↗
Power-switch dV/dt sensing
Simple means for controlling voltage risetime and powerline noise used three transistors and capacitive feedback. Rate of change of voltage across load is reduced and controlled by circuit. Circuit is useful in situations where large wire bundles are subject to noise and crosstalk due to rapid current switching.
Jones, R. L.↗
Load balancing multimodule switching power converters
Regulating system individually adjusts duty cycles of modules so that all share load equally, thus, protects individual modules and their components from overload and increases reliability and life expectancy. Converters are alternative to high-power, single unit systems.
Mclyman, W. T.↗
High power switching transistor
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Source record↗
Gigarad-tolerant power switches and memory elements
A new class of silicon devices operating without p-n junctions has been studied for radiation hardness. The electric field in these devices is uniform over most of the device, thus causing high-voltage breakdown to increase with electrode spacing. Deep acceptor levels are created in the silicon by diffusing gold atoms into the lattice, or by electron radiation. These acceptor levels, near the center of the band gap, trap out electrons so that the low resistivity of the n-type doped wafer can be raised to intrinsic resistivity. Switching between a high-resistivity state at low currents and a low-resistivity state at high currents occurs at a definite threshold voltage, exhibiting characteristics similar to silicon-controlled rectifiers. Compensating 0.1 ohm-meter (10 ohm-cm) silicon wafers requires electron fluxes of 10 to the 23rd electrons per square meter (10 to the 19th electrons per square centimeter). Experiments demonstrating gamma tolerance to 1 Gigarad(Si) are described. Calculations for maximum tolerable neutron fluence are shown, and a phenomenological explanation for these results is presented.
Joyner, W. T.↗
Low Temperature Operation of a Switching Power Converter
The low temperature operation of a 48 W, 50 kHz, 36/12 V pulse width modulated (PWM) buck de-de power converter designed with standard commercially available components and devices is reported. The efficiency of the converter increased from 85.6% at room temperature (300 K) to 92.0% at liquid nitrogen temperature (77 K). The variation of power MOSFET, diode rectifier, and output filter inductor loss with temperature is discussed. Relevant current, voltage. and power waveforms are also included.
Anglada-Sanchez, Carlos R.↗
Dual mode solid state power switch
A solid state amplifier has an output transistor stage and an input transistor stage interconnected as a Darlington circuit. An interstage transistor interconnecting the collectors of the two stages of the Darlington circuit is connected with the first stage transistor in a compound configuration. When the load current furnished by the amplifier is less than a predetermined value, the output stage operates as a simple saturated switch with its base drive current flowing through the emitter-base junction of the first stage which produces no collector current because the base-emitter junction of the interstage transistor is reverse-biased. When the load current exceeds said predetermined value, the interstage transistor begins to conduct allowing the input and output stages to operate as a Darlington amplifier and diverting a significant portion of the base drive current of the output transistor back into the load.
Maus, Louis C.↗
High voltage-high power components for large space power distribution systems
Space power components including a family of bipolar power switching transistors, fast switching power diodes, heat pipe cooled high frequency transformers and inductors, high frequency conduction cooled transformers, high power-high frequency capacitors, remote power controllers and rotary power transfer devices were developed. Many of these components such as the power switching transistors, power diodes and the high frequency capacitor are commercially available. All the other components were developed to the prototype level. The dc/dc series resonant converters were built to the 25 kW level.
Renz, D. D.↗
High voltage-high power components for large space power distribution systems
Space power components including a family of bipolar power switching transistors, fast switching power diodes, heat pipe cooled high frequency transformers and inductors, high frequency conduction cooled transformers, high power-high frequency capacitors, remote power controllers and rotary power transfer devices were developed. Many of these components such as the power switching transistors, power diodes and the high frequency capacitor are commercially available. All the other components were developed to the prototype level. The dc/dc series resonant converters were built to the 25 kW level.
Renz, D. D.↗
Space station power semiconductor package
A package of high-power switching semiconductors for the space station have been designed and fabricated. The package includes a high-voltage (600 volts) high current (50 amps) NPN Fast Switching Power Transistor and a high-voltage (1200 volts), high-current (50 amps) Fast Recovery Diode. The package features an isolated collector for the transistors and an isolated anode for the diode. Beryllia is used as the isolation material resulting in a thermal resistance for both devices of .2 degrees per watt. Additional features include a hermetical seal for long life -- greater than 10 years in a space environment. Also, the package design resulted in a low electrical energy loss with the reduction of eddy currents, stray inductances, circuit inductance, and capacitance. The required package design and device parameters have been achieved. Test results for the transistor and diode utilizing the space station package is given.
Balodis, Vilnis↗
FPGA for Power Control of MSL Avionics
A PLGT FPGA (Field Programmable Gate Array) is included in the LCC (Load Control Card), GID (Guidance Interface & Drivers), TMC (Telemetry Multiplexer Card), and PFC (Pyro Firing Card) boards of the Mars Science Laboratory (MSL) spacecraft. (PLGT stands for PFC, LCC, GID, and TMC.) It provides the interface between the backside bus and the power drivers on these boards. The LCC drives power switches to switch power loads, and also relays. The GID drives the thrusters and latch valves, as well as having the star-tracker and Sun-sensor interface. The PFC drives pyros, and the TMC receives digital and analog telemetry. The FPGA is implemented both in Xilinx (Spartan 3- 400) and in Actel (RTSX72SU, ASX72S). The Xilinx Spartan 3 part is used for the breadboard, the Actel ASX part is used for the EM (Engineer Module), and the pin-compatible, radiation-hardened RTSX part is used for final EM and flight. The MSL spacecraft uses a FC (Flight Computer) to control power loads, relays, thrusters, latch valves, Sun-sensor, and star-tracker, and to read telemetry such as temperature. Commands are sent over a 1553 bus to the MREU (Multi-Mission System Architecture Platform Remote Engineering Unit). The MREU resends over a remote serial command bus c-bus to the LCC, GID TMC, and PFC. The MREU also sends out telemetry addresses via a remote serial telemetry address bus to the LCC, GID, TMC, and PFC, and the status is returned over the remote serial telemetry data bus.
Wang, Duo↗
Ultra-high-power plasma switch INPIS for pulse power systems
A novel plasma switch, the inverse pinch switch (IN-PIS), with a combination geometry based on an inverse-pinch mechanism, has been tested and shown to alleviate the shortcomings of conventional spark gaps. The INPIS switch or INPIStron is currently being upscaled for high-voltage (approximately 1 MV) operation with a multigap arrangement similar to Sandia's rimfire electrodes used for ultra-high-voltage hold off. Preliminary results of the multigap INPIS tests at 230 kV and plasma-puff initiation methods are presented, and an application to compact pulser systems is discussed.
Lee, Ja H.↗
Switching reduces computer power requirement
Network of power switches activates only selected TTL circuits necessary for that particular time interval. Power that was fed to inactive circuits and dissipated is no longer applied. Because of this, system can use much higher, smaller power source.
Source record↗
Electronic amplifier with power supply switching Patent
Increasing power conversion efficiency of electronic amplifiers by power supply switching
Kramer, M.↗
Development and fabrication of improved power transistor switches
A new class of high-voltage power transistors was achieved by adapting present interdigitated thyristor processing techniques to the fabrication of npn Si transistors. Present devices are 2.3 cm in diameter and have V sub CEO (sus) in the range of 400 to 600V. V sub CEO (sus) = 450V devices were made with an (h sub FE)(I sub C) product of 900A at V sub CE = 2.5V. The electrical performance obtained was consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The device design, wafer processing, and assembly techniques are described. Experimental measurements of the dc characteristics, forward SOA, and switching times are included. A new method of characterizing the switching performance of power transistors is proposed.
Hower, P. L.↗
Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches
The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.
Schwarze, G. E.↗