Structure of silicon films deposited on oxidized silicon wafers
Silane for polycrystalline films deposition on oxidized silicon wafers, noting substrate temperature effects on preferred orientation of deposits
Catlin, A.↗
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Results for “polycrystalline structure”
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Polymorphism and the crystal structures of InSb at elevated temperature and pressure
The paper presents polycrystalline X-ray diffraction data for three high-pressure phases of InSb. The study employed two types of diamond-anvil pressure cells. The X-ray diffraction parameters were recorded at different fixed pressures and temperatures on flat film. The experiment utilized Zr-filtered Mo radiation. The intensities were estimated from the X-ray photographs using a semiautomated microdensitometer.
Yu, S.-C.↗
The influence of crystal structure and some properties of hexagonal metals on friction and adhesion.
Crystal structure and lattice parameter effects on single and polycrystalline metals adhesion, friction and wear properties, discussing basal slip hexagonal metals
Buckley, D. H.↗
Chemical vapor deposition growth
A laboratory type CVD reactor system with a vertical deposition chamber and sample pedestal heated by an external RF coil has been extensively modified by installation of mass flow controllers, automatic process sequence timers, and special bellows-sealed air-operated valves for overall improved performance. Various film characterization procedures, including classical metallography, SEM analyses, X ray diffraction analyses, surface profilometry, and electrical measurements (resistivity, carrier concentration, mobility, spreading resistance profiles, and minority-carrier lifetime by the C-V-t method) area used to correlate Si sheet properties with CVD parameters and substrate properties. Evaluation procedures and measurements are given. Experimental solar cell structures were made both in epitaxial Si sheet (on sapphire substrates) and in polycrystalline material on alumina substrates, the former to provide an indication of what might be an upper limit on performance of the latter. Preliminary results are given, as obtained in cell structures not specially designed to allow for the unique properties of the sheet material, and fabricated in material known to be far from optimum for photovoltaic performance. Low power conversion efficiencies have been obtained in the epitaxial as well as the polycrystalline Si sheet.
Ruth, R. P.↗
Ballistic Electron Emission Microscopy of Metal/Group IV Interfaces
Ballistic electron emission microscopy and spectroscopy, together with related techniques, have been applied with great success to the study of buried interfaces. These probes, known collectively as BEEM, have yielded important information on interface transport, interface band structure, and carrier scattering, with lateral spatial resolution on the nanometer scale. Recent applications of the technique to polycrystalline metal/semiconductor interfaces have demonstrated an ability to spatially map both conduction band and valence band semiconductor structure. BEEM studies of epitaxial silicide/silicon interfaces have been particularly fruitful, as the rich silicide band structure results in complex and often surprising transport behavior...
Hecht, M. H.↗
Epitaxial solar cells on low-cost silicon substrates
This work is directed toward a low-cost approach to the fabrication of silicon solar cells and combines the advantages and flexibility of the epitaxial technique with the use of potentially low-cost silicon substrates. Epitaxial graded base n/p/p+ solar cell structures were grown and evaluated on various forms of polycrystalline and metallurgical grade silicon as well as single crystal substrates. X-ray topographic techniques have shown improvements in the crystallographic quality of the layer grown on polycrystalline material.
Robinson, P. H.↗
Marked influence of crystal structure on the friction and wear characteristics of cobalt and cobalt-base alloys in vacuum to 10-9 millimeter of mercury. i- polycrystalline and single crystal cobalt
Friction and wear characteristics for polycrystalline cobalt sliding on various materials in high vacuum
SLIDING FRICTION↗
Structure-property relationships in directionally solidified single crystal NiAl
The ordered intermetallic alloy NiAl is being considered as a potential high temperature structural material, but lack of ductility at ambient temperatures, especially in polycrystalline form, is presently a major obstacle in achieving this goal. Even general agreement of the intrinsic ductility that can be achieved in monocrystals is in dispute. In order to understand this problem, two directionally solidified ingots of NiAl which displayed known differences in ductility were characterized in sufficient detail to identify the corresponding microstructural differences. It was found that the type and size of casting defects, i.e., porosity, present in the material were the major factors in controlling ductility of NiAl single crystals and could explain the order of magnitude variance in fracture strains reported in the literature.
Noebe, R. D.↗
Preparation and Thermoelectric Properties of the Skutterudite-Related Phase Ru(0.5)Pd(0.5)Sb3
A new skutterudite phase Ru(0.5)Pd(0.5)Sb3 was prepared. This new phase adds to a large number of already known materials with the skutterudite structure which have shown good potential for thermoelectric applications. Single phase, polycrystalline samples were prepared and characterized by x-ray analysis, electron probe microanalysis, density, sound velocity, thermal-expansion coefficient, and differential thermal analysis measurements. Ru(0.5)Pd(0.5)Sb3 has a cubic lattice, space group Im3 (T(sup 5, sub h)), with a = 9.298 A and decomposes at about 920 K. The Seebeck coefficient, the electrical resistivity, the Hall effect, and the thermal conductivity were measured on hot-pressed samples over a wide range of temperatures. Preliminary results show that Ru(0.5)Pd(0.5)Sb3 behaves as a heavily doped semiconductor with an estimated band gap of about 0.6 eV. The lattice thermal conductivity of Ru(0.5)Pd(0.5)Sb3 is substantially lower than that of the binary isostructural compounds CoSb3 and IrSb3. The unusually low thermal conductivity might be explained by additional hole and charge transfer phonon scattering in this material. The potential of this material for thermoelectric applications is discussed.
Caillat, T.↗
Galfenol Tactile Sensor Array and Visual Mapping System
The smart material, Galfenol, is being explored for its uses as a magnetostrictive material. This project seeks to determine if Galfenol can be used as a tactile sensor in a 2-D grid array, magnetic circuit system. When used within a magnetic circuit, Galfenol indicates induced stress and force as a change in flux, due to a change in permeability of the material. The change in flux is detected by Giant MagnetoResistive (GMR) Sensors, which produce a voltage change proportional to the field change. By using Galfenol in an array, this research attempts to create a sensory area. Galfenol is an alloy made of Iron and Gallium. FexGax, where 15 less than or equal to x less than or equal to 28, creates a material with useful mechanical and transduction attributes (Clark et al and Kell). Galfenol is also distinguished by the crystalline structure of the material. Two types currently exist: single crystal and polycrystalline. Single crystal has higher transduction coefficients than polycrystalline, but is more costly. Polycrystalline Galfenol is currently available as either production or research grade. The designations are related to the sample growth rate with the slower rate being the research grade. The slower growth rate more closely resembles the single crystal Galfenol properties. Galfenol 17.5- 18% research grade is used for this experiment, provided by Etrema Products Inc. The magnetic circuit and sensor array is first built at the macro scale so that the design can be verified. After the macro scale is proven, further development will move the system to the nano-level. Recent advances in nanofabrication have enabled Galfenol to be grown as nanowires. Using the nanowires, research will seek to create high resolution tactile sensors with spatial resolutions similar to human finger tips, but with greater force ranges and sensitivity capabilities (Flatau & Stadler). Possible uses of such systems include robotics and prosthetics.
Hale, Kathleen↗
Phase transformations in 40-60-GPa shocked gneisses from the Haughton Crater (Canada): An Analytical Transmission Electron Microscopy (ATEM) study
In order to better understand phase transformations, chemical migration, and isotopic disequilibrium in highly shocked rocks, we have performed a microprobe and an ATEM study on gneisses shocked up to 60 GPa from the Haughton Crater. This study reveals the following chemical and structural characteristics: (1) SiO2 dominant areas are formed by a mixture of pure SiO2 polycrystalline quartz identified by electron diffraction pattern and chemical analysis and a silica-rich amorphous phase containing minor amounts of aluminium, potassium, and iron; (2) Areas with biotitelike composition are formed by less than 200-nm grains of iron-rich spinels embedded in a silica-rich amorphous phase that is very similar to the one described above; (3) Layers with feldsparlike composition are constituted by 100-200-nm-sized alumina-rich grains (the indexation of the crystalline structure is under progress) and the silica-rich amorphous phase; (4) Zones characterized by the unusual Al/Si ratio close to 1 are formed by spinel grains (200-nm-sized) embedded in the same silica-rich amorphous phase; and (5) The fracturated sillimanites contain domains with a lamellar structure, defined by the intercalation of 100-nm-wide lamellae of mullite crystals and of a silica-rich amorphous phase. These mullite crystals preserved the crystallographical orientation of the preshock sillimanite. All compositional domains, identified at the microprobe scale, can thus be explained by a mixture in different proportion between the following phases: (1) a silica-rich amorphous phase, with minor Al and K; (2) quartz crystals; (3) spinel crystals and alumina-rich crystals; (4) sillimanite; and (5) mullite. Such mixtures of amorphous phases and crystals in different proportions explain disturbed isotope systems in these rocks and chemical heterogeneities observed on the microprobe.
Martinez, I.↗
Large structural, thin-wall castings made of metals subject to hot tearing, and their fabrication
An article, such as a gas turbine engine mixer, is made by providing a mold structure defining a thin-walled, hollow article, and a base metal that is subject to hot tear cracking when cast in a generally equiaxed polycrystalline form, such as Rene' 108 and Mar-M247. The article is fabricated by introducing the molten base metal into the mold structure, and directionally solidifying the base metal in the mold structure to form a directionally oriented structure. The directionally oriented structure may be formed of a single grain or oriented multiple grains.
Smashey, Russell W.↗
Silicon solar cells, a manufacturing cost analysis
A detailed cost analysis of solar cell module manufacturing, utilizing process sequences incorporating near-term technology, has been performed. The entire structuring of a factory to manufacture solar cell modules, starting from supplied polycrystalline silicon and other raw materials, was specified. This analysis then formed the basis for a sensitivity analysis of the major cost factors. The results of the cost and sensitivity analyses are presented here.
Grenon, L. A.↗
Preparation and Characterization of the Skutterudite-Related Phase Ru0.5Pd0.5 Sb3
A new skutterudite phase Ru0.5Pd0.5 Sb3 was prepared. It adds to the many materials with the skutterudite structure that have shown a good potential for thermoelectric applications. Single- phase polycrystalline samples were prepared and characterized by x-ray analysis, electron probe microanalysis, density, sound velocity, thermal expansion coefficient, and differential thermal analysis measurements.
ternary↗
Geometric Requirements for Modeling Polycrystalline Representative Volume Elements Using the Generalized Method of Cells
To accurately predict the mechanical response of advanced metallic parts, the grain structure of the metal must be considered and coupled to the macroscale in a multiscale model. The size of the microscale representative volume element must be sufficiently large, and the grid used to discretize the microscale must be adequately refined, in order to ensure an accurate and converged solution. The generalized method of cells is used to predict the mechanical properties of polycrystalline representative volume elements of copper containing randomly oriented grains with the properties of a single face-centered-cubic crystal. Moreover, the results of a parametric study are used to conclude the geometric requirements for an objective microscale model, with respect to the elastic stiffness.
Multiscale Modeling↗
SiC-Based Miniature High-Temperature Cantilever Anemometer
The figure depicts a miniature cantilever-type anemometer that has been developed as a prototype of compact, relatively nonintrusive anemometers that can function at temperatures up to 600 C and that can be expected to be commercially mass-producible at low cost. The design of this anemometer, and especially the packaging aspect of the design, is intended to enable measurement of turbulence in the high-temperature, high-vibration environment of a turbine engine or in any similar environment. The main structural components of the anemometer include a single-crystal SiC cantilever and two polycrystalline SiC clamping plates, all made from chemical-vapor-deposited silicon carbide. Fabrication of these components from the same basic material eliminates thermal-expansion mismatch, which has introduced spurious thermomechanical stresses in cantilever-type anemometers of prior design. The clamping plates are heavily oxidized to improve electrical insulation at high temperature. A cavity that serves as a receptacle for the clamped end of the cantilever is etched into one end of one clamping plate. Trenches that collectively constitute a socket for a multipin electrical plug (for connection to external electronic circuitry) are etched into the opposite end of this clamping plate. Metal strips for electrical contact are deposited on one face of the other clamping plate. Piezoresistive single-crystal SiC thin-film strain gauges are etched in the n-type SiC epilayer in a Wheatstone-bridge configuration. Metal contact pads on the cantilever that extend into the clamping-receptacle area, are obtained by deposition and patterning using standard semiconductor photolithography and etching methods. The cantilever and the two clamping plates are assembled into a sandwich structure that is then clamped in a stainless-steel housing. The Wheatstone- bridge carrying SiC cantilever with the metal contact pads on the piezoresistors is slid into the receptacle in the bottom clamping plate. The top clamping plate is brought into contact with the bottom plate so that the narrow section of the metal strips on the top clamp plate aligns with the metal contact pads on the cantilever. When the parts are clamped together, the metal strips provide electrical connections between the Wheatstone-bridge contact points and the sides the trenches that constitute the socket for the multipin electrical plug. Hence, to connect the Wheatstone bridge to external circuitry for processing of the anemometer readout, one need only insert the plug in the socket. In operation, the cantilever end of the stainless-steel housing is mounted flush with an engine wall and the unclamped portion of the cantilever is exposed into the flow. The cantilever is deflected in direct proportion to the force induced by component of flow parallel to the engine wall and perpendicular to the broad exposed face of the cantilever. The maximum strain on the cantilever occurs at the clamped edge and is measured by the piezoresistors, which are located there. The corresponding changes in resistance manifest themselves in the output of the Wheatstone bridge.
Okojie, Robert S.↗
Thermomechanical behavior.
Ductility in polycrystalline single phase ceramics, noting behavior at room and high temperature of single crystal structure, dislocation, etc
DUCTILITY↗
The single crystal elastic constants of hexagonal SiC to 1000 C
The relationships between the sound velocities in the cubic and hexagonal crystal structures and the tensor transformations for the two structures are applied to determine the elastic stiffnesses for the hexagonal structures of SiC to 1000 C. These results are then applied to calculate the polycrystalline elastic moduli, E and G, and their temperature variations. The calculated values for E and G at 20 C are 420 and 180 GPa; for (dE/dT) and (dG/dT), the values are -0.020 and -0.007 GPa/C, respectively.These agree well with published experimental values for E and G of dense polycrystalline alpha silicon carbides.
Li, Z.↗