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At least 55 records · Page 3

A sub-picosecond digitally-controlled phase delay

The use of precision timing measurements will be a major tool at the HL-LHC, where it will be used to suppress pile-up and to search for long-lived particles. To control a reference clock with sub-picosecond accuracy, we have fabricated in the TSMC 65 nm process a digitally controlled phase shifter. It is composed of a chain of 66 cells, each with a digitally controlled planar wave guide with either a short or long delay. With this a reference clock’s phase can be controlled to a precision of 200 fs with dynamic range of 12 ps.

Instruments & Instrumentation↗

A sub-picosecond digital clock monitoring system

We describe a low-cost system designed to monitor wander in digital clocks with a precision of ≤ 1 ps. With this system we have shown that it is possible to track phase variations at the sub-picosecond level by adding noise to a reference clock. As in many cases where a clock is part of a complex distribution network small changes in temperature and other effects can lead to small changes in the clock's phase. As a further demonstration of the system, we have used it to measure the phase changes induced in optical signals in fibers.

47 OTHER INSTRUMENTATION↗

Advances in the Large Area Picosecond Photo-Detector (LAPPD TM ): 8" × 8" MCP-PMT with Capacitively Coupled Readout

Abstract We present advances made in the Large Area Picosecond Photodetector (LAPPD), an 8" × 8" microchannel plate photomultiplier tube (MCP-PMT), since pilot production was initiated at Incom, Inc. in 2018. The Gen-I LAPPD utilizes a stripline anode for direct charge readout. The novel Gen-II LAPPD employs an internal resistive thin-film which capacitively couples to a customizable external signal readout board, streamlining production and increasing customer flexibility. The Gen-II LAPPD, with an active area of 373 cm 2 , is capable of high single photoelectron (PE) gain of ∼10 7 , low dark rates (∼1 kHz/cm 2 ), single PE (SPE) timing resolution of ∼65 ps, and 𝒪(mm) position resolution. Coupled with a UV-grade fused silica window, the LAPPD features a high quantum efficiency (QE) bialkali photocathode of >30% at 365 nm with spectral response down to ∼165 nm. The LAPPD is an excellent candidate for electromagnetic calorimeter (ECAL) timing layers, photon-based neutrino detectors, high energy collider experiments, medical imaging systems, and nuclear non-proliferation applications.

Instruments & Instrumentation↗

Features of ion generation by a picosecond laser in the range of 10 11 –10 13 W cm -2 power densities

Picosecond lasers (ps-lasers) have significant advantages for the generation of low charge state ions compared to nanosecond lasers because the influence of heat conductivity on a solid target is almost negligible in the case of ps-laser ablation for laser pulse durations less than 10 ps. However, there is no comprehensive data on ion yields for different elements and target irradiation conditions for laser power densities at the target surface around and below 10 13 W cm –2 , which is of interest to our study of such plasmas as a source of low charge state ions for various applications, particularly for external injection of those ions into an Electron Beam Ion Source (EBIS). We investigated ion generation from Al, Ti, Cu, Nb and Ta target elements by a ps-laser with power densities in the range of 10 11 –10 13 W cm –2 at the target surface. A ps-laser with 1.27 mJ maximum energy within an 8 ps pulse and repetition rate up to 400 Hz has been used to generate a laser-ablated plasma. Dependencies of ion current versus time, total charge of registered ions as well as ion kinetic energy distributions are characterized using a Faraday cup. Significant difference in ion current dynamics between first, second and following shots onto the same target spot was found for all five target elements. The total charge of ions registered by the Faraday cup increases linearly with increasing laser pulse energy and is almost independent of the target element and number of shots onto the same target spot for all five target elements studied. The results obtained give us a basis for specification and design of the source of low charge state ions for external injection into EBIS.

43 PARTICLE ACCELERATORS↗

Ultrabroad-band x-ray source using a picosecond, laser-driven plasma accelerator

An ultrabroad-band x-ray source, with photon energies from 10 keV to >1 MeV, based on a picosecond laser-driven plasma accelerator, is characterized and used to radiograph high-energy-density-science relevant targets. The measured yield of 10 12 photons/shot is reaching the necessary photon yields to radiograph, in a single shot, high areal density objects and matter under extreme conditions. By focusing a short laser pulse (120 J, 1 ps) into a gas jet, a < 100 mrad electron beam with energies up to 350 MeV and up to 70 nC of charge was produced by a combination of laser self-modulation instability and direct laser acceleration. A foil placed at the exit of the gas jet is used to convert part of the electron beam energy into x rays through inverse bremsstrahlung and/or inverse Compton scattering, generating a bright, broad-band, high-photon-energy beam. This beam is used to radiograph a gold half hohlraum with a high-density sphere inside with relevant characteristics for high-energy-density science and inertial confinement fusion.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Picosecond lifetime measurements of resonances using a thick-target invariant-mass technique

Here, a new technique is presented for measuring the half-lives of resonances in the picosecond range using presently available invariant-mass apparatus and a thick target. For short-lived resonances, the energy losses of the decay fragments in the target material change their relative velocities giving rise to a poor invariant-mass resolution. However, for longer-lived resonances that travel through the remaining target material before decaying outside of the target, this dominant contribution to the resolution is eliminated. The measured invariant-mass peak will then display a narrow peak from these events which sits on a wider structure associated with the remaining events that decay in the target. The fraction of the events in the narrow peak is related to the probability that the resonance leaves the target before decaying and hence is related to the lifetime. This technique is exercised for the 2.685-MeV resonance in 33 Cl which decays by emitting an f -wave proton. A half-life of T 1/2 =5.7$^{+4.1}_{-2.5}$ ps was measured which is consistent with values inferred from other known properties of this resonance.

lifetimes & widths↗

A 32-Channel Cryo-CMOS ASIC for SNSPD Biasing and Readout with Picosecond

Superconducting nanowire single-photon detectors (SNSPD) are a promising technology for particle detection. Although SNSPDs have demonstrated picosecond timing accuracy, scaling up large arrays has proved challenging. In this work, we introduce a 32-channel cryo-CMOS application-specific integrated circuit (ASIC) that can be tightly integrated with SNSPD arrays. The ASIC is designed to operate at a temperature of 4K and can perform up to 32 simultaneous timing measurements with a root-mean-square (RMS) accuracy of 8.0ps. The ASIC includes on-chip circuitry for externally biasing superconducting devices, low-noise amplifiers for reading superconducting devices, high-resolution time-to-digital converters (TDC) for time-tagging events, and serializers for transmitting data to room-temperature electronics. The ASIC is manufactured in a 22nm FDSOI process and occupies an area of 4.0mm x 1.0mm. The performance of the ASIC was verified using custom cryogenic device models internally developed for the 22nm SOI process. Measurement results will be presented at the conference.

Fredenburg, Jeff↗

Shear wave generation by mode conversion in picosecond ultrasonics: Impact of grain orientation and material properties

Abstract Picosecond ultrasonics has seen wide application in the investigation of interfaces in semiconductors and 3D imaging in biological systems. Shear ultrasonic waves are important for elastic constant and grain orientation measurement in ceramic materials. In this study, we investigate the impact of grain orientation and material's elastic properties on the generation efficiency of shear waves by mode conversion at a transducer thin film/substrate interface. The solution of acoustic wave equations suggests that crystal grain orientation has a strong impact on the generated shear wave amplitude. This dependence is found to be closely related to the magnitude of longitudinal component of wave displacements. The applicability of analytical model is validated by the experimental results from time‐domain Brillouin scattering. Moreover, material properties determine acoustic wave amplitudes based on the acoustic mismatch model and, particularly, large elastic anisotropy defined by Zener ratio favors strong shear waves. In the light of this analysis, several recommendations on suitable grain orientations and film materials are made to facilitate shear wave detection.

Wang, Yuzhou↗

Picosecond carrier dynamics in InAs and GaAs revealed by ultrafast electron microscopy

Understanding the limits of spatiotemporal carrier dynamics, especially in III-V semiconductors, is key to designing ultrafast and ultrasmall optoelectronic components. However, identifying such limits and the properties controlling them has been elusive. Here, using scanning ultrafast electron microscopy, in bulk n-GaAs and p-InAs, we simultaneously measure picosecond carrier dynamics along with three related quantities: subsurface band bending, above-surface vacuum potentials, and surface trap densities. We make two unexpected observations. First, we uncover a negative-time contrast in secondary electrons resulting from an interplay among these quantities. Second, despite dopant concentrations and surface state densities differing by many orders of magnitude between the two materials, their carrier dynamics, measured by photoexcited band bending and filling of surface states, occur at a seemingly common timescale of about 100 ps. This observation may indicate fundamental kinetic limits tied to a multitude of material and surface properties of optoelectronic III-V semiconductors and highlights the need for techniques that simultaneously measure electro-optical kinetic properties.

42 ENGINEERING↗

Post-compression of long-wave infrared 2 picosecond sub-terawatt pulses in bulk materials

We have experimentally demonstrated the post-compression of a long-wave infrared (9.2 μm) 150 GW peak power pulse from 2 ps to less than 500 fs using a sequence of two bulk materials with negative group velocity dispersion (GVD). The compression resulted in up to 1.6-fold increase of the peak power and up to 2.8-fold increase of the intensity in the center of a quasi-Gaussian beam. The partial decoupling of the self-phase modulation and chirp compensation stages by using two materials with significantly different ratios of nonlinear refractive index to GVD provides accurate optimization of the compression mechanism and promises a viable path to scaling peak powers to supra-terawatt levels. During the preparatory study, we measured, for the first time to our knowledge, the nonlinear refractive indices of NaCl, KCl, and BaF 2 for picosecond pulses in the long-wave infrared region.

43 PARTICLE ACCELERATORS↗

Dynamic wavelength control of laser pulse profiles at picosecond to nanosecond timescales

We report on a novel combined laser pulse shaping and dynamic wavelength encoding capability based on a simple architecture implementing direct space to time mapping. There are several potential applications that can be enabled by the ability to control the instantaneous intensity or wavelength of an optical waveform on a picosecond-to-nanosecond timescale. To our knowledge, no known methods can access this temporal regime with a practical architecture. Here, we demonstrate an extension of the Space–Time Induced Linearly Encoded Transcription for Temporal Optimization (STILETTO) technique that can generate optical waveforms with a programmable instantaneous wavelength vs. time. We experimentally demonstrate the technique by generating self-gated spectrograms and show that it can encode dynamic wavelength vs time profiles at timescales not achievable by any other known method.

47 OTHER INSTRUMENTATION↗

Amplification of 10 μm picosecond pulses in a compact optically pumped multiatmosphere CO 2 laser

Picosecond pulses, generated by a commercial mid-IR optical parametric source (∼0.5 ps, 1-5 μJ), have been regeneratively amplified to an energy of ≤2 mJ in a palm-size high-pressure CO 2 amplifier optically pumped by a Q-switched 2.8 μm Cr:Er:YSGG laser. The characteristics of the amplified pulses have been studied as a function of seed wavelength centered around 10.3 or 10.6 μm, and the pressure in the gain medium. The measured amplified pulse length is ∼5 ps. Numerical modeling suggests that pulses as short as ∼0.5 ps with multi-GW peak power can be generated in a mixture of CO 2 isotopes. Robustness of the output of a compact CO 2 regenerative amplifier to the seed and pump fluctuations measured at 3 Hz and a perfect Gaussian beam profile indicates the potential of such laser technology for producing high-power ultrashort long-wave infrared pulses at high repetition rates.

43 PARTICLE ACCELERATORS↗

Programmable, direct space-to-time picosecond resolution pulse shaper with nanosecond record

In this work, we demonstrate a novel, to the best of our knowledge, extension of optical arbitrary waveform generation capable of picosecond resolution over nanosecond duration. The method, called space–time induced linearly encoded transcription for temporal optimization, is based on direct space-to-time pulse shaping and is extended here to single-mode output with a programmable temporal profile. We develop the theory of operation and discuss ultimate limits on resolution, record length, and efficiency. We report on the results of an experimental demonstration showing ~1ps resolution over 600 ps.

42 ENGINEERING↗

Non-resonant picosecond three-wave mixing in the gas phase

We report on the experimental observation of non-resonant, second-order optical sum-frequency generation (SFG) in five different atomic and molecular gases. The measured signal is attributed to a SFG process by characterizing its intensity scaling and its polarization behavior. We show that the electric quadrupole mechanism cannot explain the observed trends and suggest a mechanism based on symmetry breaking along the incident beam path arising from laser-induced species ground state number density gradients. Our results demonstrate that the SFG is about four orders of magnitude stronger than the third-harmonic generation (THG) and independent from any externally applied electric fields. In conclusion, these features make this method suitable for gas number density measurements at the picosecond time scale in reactive flows and plasmas.

LaCombe, Grayson↗

Single-shot picosecond pump coherent Rayleigh scattering thermometry

A single-shot coherent Rayleigh scattering (CRS) technique capable of measurement times less than 10 ns is presented. Here, the use of a mode-locked picosecond pump laser yields repeatable electrostrictive forcing compared to previous CRS experiments using unseeded nanosecond pump pulses, which are beset by shot-to-shot variations. Quantitative measurements are achieved by dispersing the CRS signal onto an EMCCD sensor using a virtually imaged phased array and comparing the experimental spectra to an existing kinetic model with a least-squares fitting routine. Measurements are demonstrated at ambient and low-pressure (2 Torr), low-temperature (100 K) conditions where the CRS measurement is within the collisionless regime. Single-shot statistics indicated precision and accuracy within 4% at ambient conditions and within 8% at low density and temperature conditions. This single-shot CRS technique is a powerful diagnostic tool with potential for multi-parameter measurements in complex flow environments, including high-speed aerodynamic ground test facilities.

Senior, William Charles Bowman [Sandia National La↗

Noncolinear Synthesis of Picosecond Flat-Top Laser Pulses to Increase Electron Photoinjector Brightness

Next-generation electron photoinjector accelerators, such as the LCLS-II photoinjector, have increasingly tight requirements on the excitation lasers, often calling for tens of picosecond, temporally flat-top, ultraviolet (UV) pulse trains to be delivered at up to 1 MHz[1]. We present a numerical and experimental implementation of a non-colinear sum frequency generation scheme wherein the incident optical pulses have equal and opposite amounts of spectral dispersion resulting in a spectrally narrowband pulse with flat-top temporal profile[2]. In preliminary experiments we achieve upwards of 40% conversion efficiency with this process. We additionally demonstrate the ability for the narrowband pulses to be directly upconverted to the UV for driving a photocathode.

Lemons, R.↗

A 32-Channel Cryo-CMOS ASIC for SNSPD Biasing and Readout with Picosecond Timing

Superconducting nanowire single-photon detectors (SNSPD) are a promising technology for particle detection. Although SNSPDs have demonstrated picosecond timing accuracy, scaling up large arrays has proved challenging. In this work, we introduce a 32-channel cryo-CMOS application-specifc integrated circuit (ASIC) that can be tightly integrated with SNSPD arrays. The ASIC is designed to operate at a temperature of 4K and can perform up to 32 simultaneous timing measurements with a root-mean-square (RMS) accuracy of 8.0ps. The ASIC includes on-chip circuitry for externally biasing superconducting devices, low-noise amplifers for reading superconducting devices, high-resolution time-to-digital converters (TDC) for time-tagging events, and serializers for transmitting data to room-temperature electronics. The ASIC is manufactured in a 22nm FDSOI process and occupies an area of 4.0mm x 1.0mm. The performance of the ASIC was verifed using custom cryogenic device models internally developed for the 22nm SOI process. Measurement results will be presented at the conference.

Fredenburg, Jeff↗

Picosecond Carrier Dynamics in InAs and GaAs Revealed by Ultrafast Electron Microscopy

Understanding the limits of spatio-temporal carrier dynamics, especially in III-V semiconductors, is key to designing ultrafast and ultra-small optoelectronic components. However, identifying such limits and the properties controlling them has been elusive. Here, using scanning ultrafast electron microscopy (SUEM), in bulk n-GaAs and p-InAs, we simultaneously measure picosecond carrier dynamics along with three related quantities: sub-surface band bending, above-surface vacuum potentials, and surface trap densities. We make two surprising observations. First, we uncover a negative-time contrast in secondary electrons resulting from an interplay among these quantities. Second, despite dopant concentrations and surface state densities differing by many orders of magnitude between the two materials, their carrier dynamics, measured by photo-excited band bending and filling of surface states, occur at a seemingly common timescale of about 100 ps. This observation may indicate fundamental kinetic limits tied to a multitude of material and surface properties of optoelectronic III-V semiconductors, and highlights the need for techniques that simultaneously measure electro-optical kinetic properties.

36 MATERIALS SCIENCE↗