Microwave microelectronic techniques applied to phase shifters and other control devices Final report, 29 May - 29 Nov. 1968
Microwave microelectronic techniques applied to phase shifters and other control devices
Robinson, G. H.↗
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Four-to-one power combiner for 20 GHz phased array antenna using RADC MMIC phase shifters
The design and microwave simulation of two-to-one microstrip power combiners is described. The power combiners were designed for use in a four element phase array receive antenna subarray at 20 GHz. Four test circuits are described which were designed to enable testing of the power combiner and the four element phased array antenna. Test Circuit 1 enables measurement of the two-to-one power combiner. Test Circuit 2 enables measurement of the four-to-one power combiner. Test Circuit 3 enables measurement of a four element antenna array without phase shifting MMIC's in order to characterize the power combiner with the antenna patch-to-microstrip coaxial feedthroughs. Test circuit 4 is the four element phased array antenna including the RADC MMIC phase shifters and appropriate interconnects to provide bias voltages and control phase bits.
Source record↗
A gallium-arsenide digital phase shifter for clock and control signal distribution in high-speed digital systems
The design, implementation, testing, and applications of a gallium-arsenide digital phase shifter and fan-out buffer are described. The integrated circuit provides a method for adjusting the phase of high-speed clock and control signals in digital systems, without the need for pruning cables, multiplexing between cables of different lengths, delay lines, or similar techniques. The phase of signals distributed with the described chip can be dynamically adjusted in eight different steps of approximately 60 ps per step. The IC also serves as a fan-out buffer and provides 12 in-phase outputs. The chip is useful for distributing high-speed clock and control signals in synchronous digital systems, especially if components are distributed over a large physical area or if there is a large number of components.
Fouts, Douglas J.↗
Thin Film Ba(x) Sr(1-x)TiO3 Coupled Microstrip Ku- and K-band Phase Shifters
In this report authors found that the: (1) Best room temperature CMPS performance seen on 1% Mn-doped Ba(0.6)Sr(0.4)TiO3 annealed films on MgO: K = 74 C/dB. Phase Shift/coupled length: 1427 C/cm (2) Attempt to improve phase shifters through thicker as-deposited films stymied by declining film quality with film thickness. Annealing may alleviate this problem. (3) CMPS phase shift at Ku-band didn't experience the great rise in tunability seen in 1 MHz epsilon(sub r)(0) data. (4) While CMPS circuits may be well suited for arrays, simpler circuits like CPW would be more useful for characterizing epsilon(sub r) and tan(delta) at Ku-and K-band. (5) New substrates and designs are being tested.
VanKeuls, F. W.↗
Broadband Achromatic Phase Shifter for a Nulling Interferometer
Nulling interferometry is a technique for imaging exoplanets in which light from the parent star is suppressed using destructive interference. Light from the star is divided into two beams and a phase shift of radians is introduced into one of the beams. When the beams are recombined, they destructively interfere to produce a deep null. For monochromatic light, this is implemented by introducing an optical path difference (OPD) between the two beams equal to lambda/2, where lambda is the wavelength of the light. For broadband light, however, a different phase shift will be introduced at each wavelength and the two beams will not effectively null when recombined. Various techniques have been devised to introduce an achromatic phase shift a phase shift that is uniform across a particular bandwidth. One popular technique is to use a series of dispersive elements to introduce a wavelength-dependent optical path in one or both of the arms of the interferometer. By intelligently choosing the number, material and thickness of a series of glass plates, a nearly uniform, arbitrary phase shift can be introduced between two arms of an interferometer. There are several constraints that make choosing the number, type, and thickness of materials a difficult problem, such as the size of the bandwidth to be nulled. Several solutions have been found for bandwidths on the order of 20 to 30 percent (Delta(lambda)/lambda(sub c)) in the mid-infrared region. However, uniform phase shifts over a larger bandwidth in the visible regime between 480 to 960 nm (67 percent) remain difficult to obtain at the tolerances necessary for exoplanet detection. A configuration of 10 dispersive glass plates was developed to be used as an achromatic phase shifter in nulling interferometry. Five glass plates were placed in each arm of the interferometer and an additional vacuum distance was also included in the second arm of the interferometer. This configuration creates a phase shift of pi radians with an average error of 5.97 x 10(exp -8) radians and standard deviation of 3.07 x 10(exp -4) radians. To reduce ghost reflections and interference effects from neighboring elements, the glass plates are tilted such that the beam does not strike each plate at normal incidence. Reflections will therefore walk out of the system and not contribute to the intensity when the beams are recombined. Tilting the glass plates, however, introduces several other problems that must be mitigated: (1) the polarization of a beam changes when refracted at an interface at non-normal incidence; (2) the beam experiences lateral chromatic spread as it traverses multiple glass plates; (3) at each surface, wavelength- dependent intensity losses will occur due to reflection. For a fixed angle of incidence, each of these effects must be balanced between each arm of the interferometer in order to ensure a deep null. The solution was found using a nonlinear optimization routine that minimized an objective function relating phase shift, intensity difference, chromatic beam spread, and polarization difference to the desired parameters: glass plate material and thickness. In addition to providing a uniform, broadband phase shift, the configuration achieves an average difference in intensity transmission between the two arms of the interferometer of 0.016 percent with a standard deviation of 3.64 x 10(exp -4) percent, an average difference in polarization between the two arms of the interferometer of 5.47 x 10(exp -5) percent with a standard deviation of 1.57 x 10(exp -6) percent, and an average chromatic beam shift between the two arms of the interferometer of -47.53 microns with a wavelength-by-wavelength spread of 0.389 microns.
Bolcar, Matthew R.↗
Thin Film Ba(x)Sr(1-x)TiO3 Ku- and K-Band Phase Shifters Grown on MgO Substrates
We report measurements of gold circuits fabricated on four Ba(x)Sr(1-x)TiO3 films doped with 1% Mn grown on MgO substrates by laser ablation. Low frequency measurements of epsilon(sub r) and tan(delta) on interdigital capacitors are compared with high frequency measurements of phase shift and insertion loss on coupled microstrip phase shifters done on the same films. The variation in temperature of both high and low frequency device parameters is compared. Annealed and unannealed films are compared. Room temperature figures of merit of phase shift per insertion loss of up to 58.4 C/dB at 18 GHz and 400 V dc bias were measured.
VanKeuls, F. W.↗
Characterization of (Ba(0.5)Sr(0.5)) TiO3 Thin Films for Ku-Band Phase Shifters
The microstructural properties of (Ba(0.5)Sr(0.5)TiO3) (BSTO) thin films (300, 700, and 1400 nm thick) deposited on LaAlO3 (LAO) substrates were characterized using high-resolution x-ray diffractometry. Film crystallinity was the parameter that most directly influenced tunability, and we observed that a) the crystalline quality was highest in the thinnest film and progressively degraded with increasing film thickness; and b) strain at the film/substrate interface was completely relieved via dislocation formation. Paraelectric films such as BSTO offer an attractive means of incorporating low-cost phase shifter circuitry into beam-steerable reflectarray antennas.
Mueller, Carl H.↗
Digital phase shifter synchronizes local oscillators
Digital phase-shifting network is used as synchronous frequency multiplier for applications such as phase-locking two signals that may differ in frequency. Circuit has various phase-shift capability. Possible applications include data-communication systems and hybrid digital/analog phase-locked loops.
Ali, S. M.↗
Constant-amplitude, frequency- independent phase shifter
Electronic circuit using operational amplifiers provides output with constant phase shift amplitude, with respect to sinusoidal input, over wide range of frequencies. New circuit includes field effect transistor, Q, operational amplifiers, A1 and A2, and phase detector.
Deboo, G. J.↗
Digital phase shifter
Device requiring only TTL integrated circuits and single 5-volt power supply, varies phase shift of digital input over approximate range of 15 to 165 deg.
Perry, M. G.↗
Millimeter-wave diode-grid phase shifters
Monolithic diode grids have been fabricated on 2-cm square gallium-arsenide wafers with 1600 Schottky-barrier varactor diodes. Shorted diodes are detected with a liquid-crystal technique, and the bad diodes are removed with an ultrasonic probe. A small-aperture reflectometer that uses wavefront division interference was developed to measure the reflection coefficient of the grids. A phase shift of 70 deg with a 7-dB loss was obtained at 93 GHz when the bias on the diode grid was changed from -3 V to 1 V. A simple transmission-line grid model, together with the measured low-frequency parameters for the diodes, was shown to predict the measured performance over the entire capacitive bias range of the diodes, as well as over the complete reactive tuning range provided by a reflector behind the grid, and over a wide range of frequencies from 33 GHz to 141 GHz. This shows that the transmission-line model and the measured low-frequency diode parameters can be used to design an electronic beam-steering array and to predict its performance. An electronic beam-steering array made of a pair of grids using state-of-the-art diodes with 5-ohm series resistances would have a loss of 1.4 dB at 90 GHz.
Lam, Wayne W.↗
MQW Optical Feedback Modulators And Phase Shifters
Laser diodes equipped with proposed multiple-quantum-well (MQW) optical feedback modulators prove useful in variety of analog and digital optical-communication applications, including fiber-optic signal-distribution networks and high-speed, low-crosstalk interconnections among super computers or very-high-speed integrated circuits. Development exploits accompanying electro-optical aspect of QCSE - variation in index of refraction with applied electric field. Also exploits sensitivity of laser diodes to optical feedback. Approach is reverse of prior approach.
Jackson, Deborah J.↗
MEMS, Ka-Band Single-Pole Double-Throw (SPDT) Switch for Switched Line Phase Shifters
Ka-band MEMS doubly anchored cantilever beam capacitive shunt devices are used to demonstrate a MEMS SPDT switch fabricated on high resistivity silicon (HRS) utilizing finite ground coplanar waveguide (FGC) transmission lines. The SPDT switch has an insertion loss (IL), return loss (RL), and isolation of 0.3dB, 40dB, and 30 dB, respectively at Ka-band.
Scardelletti, Maximilian C.↗
Modulation Study for Beam Steerable Reflectarray Antennas
The reflectarray antenna is a power-efficient antenna but with an inherent intersymbol interference (ISI) problem with digital modulations. The composite signal model of a reflectarray is established. The ISI is characterized by the signal components delays. The feed-to-element distance and the element-to-observation distance contribute to the total delay, with the latter having the major effect. The effect of typical phase shifters' phase errors is analyzed and evaluated. Simulations are performed. The analytical and simulation results for an example reflectarray at f(sub c) = 26.5 GHz and bit rate of 1.325 Gbps show that the BER degradation due to ISI is proportional to the symbol rate and the loss ranges from less than 1 dB to around 2 dB in E(sub b)/N(sub o), depending on original E(sub b)/N(sub o), for BPSK, QPSK, 8PSK and 16QAM. The phase error effect is negligible for lower order modulations and is unacceptable for higher order modulations such as 64 and 256QAM.
Xiong, Fuqin↗
Current Status of Thin Film (Ba,Sr)TiO3 Tunable Microwave Components for RF Communications
The performance of proof-of-concept ferroelectric microwave devices has been moving steadily closer to the level needed for satellite and other rf communications applications. This paper will review recent progress at NASA Glenn in developing thin film Ba(x)Sr(1-x)TiO3 tunable micro-wave components for these applications. Phase shifters for phased array antennas, tunable filters and tunable oscillators employing microstrip and coupled microstrip configurations will be presented. Tunabilities, maximum dielectric constants, and phase shifter parameters will be discussed (e.g., coupled microstrip phase shifters with phase shift over 200 deg at 18 GHz and a figure of merit of 74.3 deg/dB). Issues of post-annealing, Mn-doping and Ba(x)Sr(1-x) TiO3 growth on sapphire and alumina substrates will be covered. The challenges of incorporating these devices into larger systems, such as yield, variability in phase shift and insertion loss, and protective coatings will also be addressed.
VanKeuls, F. W.↗
Current Status of Thin Film (Ba,Sr) TiO3 Tunable Microwave Components for RF Communications
The performance of proof-of-concept ferroelectric microwave devices has been moving steadily closer to the level needed for satellite and other rf communications applications. This paper will review recent progress at NASA Glenn in developing thin film Ba(x)Sr(1-x)TiO3 tunable microwave components for these applications. Phase shifters for phased array antennas, tunable filters and tunable oscillators employing microstrip and coupled microstrip configurations will be presented. Tunabilities, maximum dielectric constants, and phase shifter parameters will be discussed (e.g., coupled microstrip phase shifters with phase shift over 200 deg. at 18 GHz and a figure of merit of 74.3 deg./dB). Issues of postannealing, Mn-doping and Ba(x)Sr(1-x)TiO3 growth on sapphire and alumina substrates will be covered. The challenges of incorporating these devices into larger systems, such as yield, variability in phase shift and insertion loss, and protective coatings will also be addressed.
VanKeuls, F. W.↗
Life Cycle Testing of Ba(x)Sr(1-x)TiO3 Ferroelectric Thin Films in a Tunable Microwave Device
Thin film ferroelectrics are being studied as candidates for novel tunable microwave components such as tunable filters, tunable oscillators, and phase shifters for applications in phased array antennas. Much work has been done optimizing the ferroelectric material and in producing proof-of-concepts of these components. However, little attention has been given to their reliability. In this study we present our results on the reliability of high quality K-band phase shifters made of Ba(sub x)Sr(sub 1-x)TiO3 (BSTO) ferroelectric thin films (0.5 to 0.75 micrometers thick) on MgO and LAO. The phase shift and insertion loss were measured at 300 K over 104 operation cycles within a 0 to 400 V dc bias range (0 to 40 V/micrometer) at 15, 18, and 22 GHz. Results for these phase shifters indicate that in general there were no appreciable changes in phase shift after 4x10(exp 4) cycles, suggesting that these phase shifters are robust enough to sustain optimal performance under the operating mode typical of fast tracking phased arrays.
Miranda, Felix A.↗
Fiber optic transmission line stabilization apparatus and method
A reference signal of RF frequency modulates a 0.85 micrometer wavelength optical transmitter. The output of which passes through a first optical filter and a voltage-controller phase shifter. The output of the phase shifter is provided to the fiber optic transmission line. At the receiving end of the transmission line, the signal is demodulated and used to modulate a 1.06 micrometer optical transmitter. The signal from the transmitter is provided to the fiber optic transmission line and passes through the voltage-controlled phase shifter to a phase error detector. The phase of the modulation of the 1.06 micrometer wavelength signal is compared to the phase of the reference signal by the phase error detector. A phase control signal related to the phase difference is provided to the voltage controlled phase shifter which alters the phase of both optical signals until a predetermined phase relationship between modulation on the 1.06 micrometer signal and the reference signal is obtained.
Lutes, G. F., Jr.↗