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At least 55 records · Page 3

Hydride Microstructure at the Metal-Oxide Interface of a Zircaloy-4 Fuel Clad from the H.B. Robinson Nuclear Reactor

During nuclear reactor operation, some of the hydrogen that is produced by the water side corrosion is uptaken by cladding. When the uptaken hydrogen content exceeds its solubility limit in the cladding at a specific temperature, it precipitates as hydride particles in the cladding. This process occurs immediately at the metal-oxide interface forming a hydride rim because of the temperature gradient in the cladding. The presence of hydride rim and its microstructure severely reduces the cladding strength and can induce crack initiation and propagation during design basis accidents, transportation, and wet/dry storage. Because hydrides platelets are one of the potent crack initiation sites, microstructural characterization of hydride rim becomes essential to the safe operation of nuclear reactor and spent nuclear fuel retrievability. Therefore, we investigate the hydride rim microstructure at the metal oxide interface using scanning transmission electron microscopy (S/TEM) with Energy Dispersive X-ray Spectroscopy (EDS) that allows for the microstructural and local chemistry characterization of hydride precipitates to be determined, and enables a relationship to be derived on how the precipitate sites are affected by the oxide and their complex stacking behavior of the precipitates.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Hydride Microstructure at the Metal-Oxide Interface of Zircaloy-4 from H.B. Robinson Nuclear Reactor

This study investigates the hydride rim microstructure at the metal-oxide interface of Zircaloy-4 cladding segment removed from H.B. Robinson Nuclear Reactor by utilizing high resolution electron microscopy techniques with energy dispersive x-ray spectroscopy at Oak Ridge National Laboratory under the NSUF Rapid Turnout Experiment program. A complex stacking and orientation of hydride platelets has been observed below the sub-oxide layer. Furthermore, radial hydride platelets have been observed. EDS signals of both Fe and Cr has been reduced within hydrides whereas EDS signal of Sn is unaffected.

EDS↗

Polarization screening-induced magnetic phase gradients at complex oxide interfaces

Thin-film oxide heterostructures show great potential for use in spintronic memories, where electronic charge and spin are coupled to transport information. Here we use a La 0.7 Sr 0.3 MnO 3 (LSMO)/PbZr 0.2 Ti 0.8 O 3 (PZT) model system to explore how local variations in electronic and magnetic phases mediate this coupling. We present direct, local measurements of valence, ferroelectric polarization and magnetization, from which we map the phases at the LSMO/PZT interface. We combine these experimental results with electronic structure calculations to elucidate the microscopic interactions governing the interfacial response of this system. We observe a magnetic asymmetry at the LSMO/PZT interface that depends on the local PZT polarization and gives rise to gradients in local magnetic moments; this is associated with a metal–insulator transition at the interface, which results in significantly different charge-transfer screening lengths. This work establishes a framework to understand the fundamental asymmetries of magnetoelectric coupling in oxide heterostructures.

36 MATERIALS SCIENCE↗

Atomic-scale chemical quantification of oxide interfaces using energy-dispersive X-ray spectroscopy

Atomic-scale quantification of chemical composition across oxide interfaces is important for understanding physical properties of epitaxial oxide nanostructures. Energy-dispersive X-ray spectroscopy (EDS) in an aberration-corrected scanning transmission electron microscope was used to quantify chemical composition across the interface of ferromagnetic La{sub 0.7}Sr{sub 0.3}MnO{sub 3} and antiferromagnetic BiFeO{sub 3} quantum structure. This research demonstrates that chemical composition at atomic columns can be quantified by Gaussian peak-fitting of EDS compositional profiles across the interface. Cation diffusion was observed at both A- and B-sublattice sites; and asymmetric chemical profiles exist across the interface, consistent with the previous studies.

36 MATERIALS SCIENCE↗

Improvement of plasmonic enhancement of quantum dot emission via an intermediate silicon-aluminum oxide interface

We studied the emission of quantum dots in the presence of plasmon-metal oxide substrates, which consist of arrays of metallic nanorods embedded in amorphous silicon coated with a nanometer-thin layer of aluminum oxide on the top. We showed that the combined effects of plasmons and the silicon-aluminum oxide interface can lead to significant enhancement of the quantum efficiency of quantum dots. Our results show that such an interface can significantly enhance plasmonic effects of the nanorods via quantum dot-induced exciton-plasmon coupling, leading to partial polarization of the quantum dots' emission.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Unconventional quantum oscillations and evidence of nonparabolic electronic states in quasi-two-dimensional electron system at complex oxide interfaces

The simultaneous occurrence of electric-field controlled superconductivity and spin-orbit interaction makes two-dimensional electron systems (2DES) constructed from perovskite transition metal oxides promising candidates for the next generation of spintronics and quantum computing. It is, however, essential to understand the electronic bands thoroughly and verify the predicted electronic states experimentally in these 2DES to advance technological applications. Here, we present insights into the electronic states of the 2DES at oxide interfaces through comprehensive investigations of Shubnikov–de Haas oscillations in three different systems: EuO/KTaO 3 , LaAlO 3 /SrTiO 3 , and amorphous-LaAlO 3 /KTaO 3 . To accurately resolve these oscillations, we conducted transport measurements in high magnetic fields up to 60 T and low temperatures down to 100 mK. For 2D confined electrons at these interfaces, we observed a progressive increase of oscillations frequency and cyclotron mass with the magnetic field. We interpret these universal and intriguing findings by considering the existence of nontrivial electronic bands, for which the 𝐸−𝑘 dispersion incorporates both linear and parabolic relations. In addition to providing experimental evidence for nonparabolic electronic states in KTaO 3 and SrTiO 3 2DES, the unconventional oscillations presented in this study establish a paradigm for quantum oscillations in 2DES based on perovskite transition metal oxides, where the oscillation frequencies in 1/𝐵 exhibit quadratic dependence on the magnetic field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Chemical depth profiles of the GaAs/native oxide interface

The final-state oxidation products and their distribution in thin native oxides (30-40 A) on GaAs have been studied using X-ray photoelectron spectroscopy in conjunction with chemical depth profiling. Extended room-temperature-oxidation conditions have been chosen to allow the native oxide to attain its equilibrium composition and structure. The work emphasizes the use of chemical depth-profiling methods which make it possible to examine the variation in chemical reactivity of the oxide structure. A minimum of two distinct regions of Ga2O3 with differing chemical reactivity is observed. Chemical shift data indicate the presence of As2O3 in the oxide together with an elemental As overlayer at the interface. A change in relative charge transfer between oxygen and both arsenic and gallium-oxide species is observed in the region of the interface.

Grunthaner, P. J.↗

Steering the methanol steam reforming reactivity of intermetallic Cu–In compounds by redox activation: stability vs . formation of an intermetallic compound–oxide interface

To compare the inherent methanol steam reforming properties of intermetallic compounds and a corresponding intermetallic compound–oxide interface, we selected the Cu–In system as a model to correlate the stability limits, self-activation and redox activation properties with the catalytic performance. Three distinct intermetallic Cu–In compounds – Cu 7 In 3 , Cu 2 In and Cu 11 In 9 – were studied both in an untreated and redox-activated state resulting from alternating oxidation–reduction cycles. The stability of all studied intermetallic compounds during methanol steam reforming (MSR) operation is essentially independent of the initial stoichiometry and all accordingly resist substantial structural changes. The inherent activity under batch MSR conditions is highest for Cu 2 In, corroborating the results of a Cu 2 In/In 2 O 3 sample accessed through reactive metal–support interaction. Under flow MSR operation, Cu 7 In 3 displays considerable deactivation, while Cu 2 In and Cu 11 In 9 feature stable performance at simultaneously high CO 2 selectivity. Here, the missing significant self-activation is most evident in the operando thermogravimetric experiments, where no oxidation is detected for any of the intermetallic compounds. In situ X-ray diffraction allowed us to monitor the partial decomposition and redox activation of the Cu–In intermetallic compounds into Cu 0.9 In 0.1 /In 2 O 3 (from Cu 7 In 3 ), Cu 7 In 3 /In 2 O 3 (from Cu 2 In) and Cu 7 In 3 /Cu 0.9 In 0.1 /In 2 O 3 (from Cu 11 In 9 ) interfaces with superior MSR performance compared to the untreated samples. Although the catalytic profiles appear surprisingly similar, the latter interface with the highest indium content exhibits the least deactivation, which we explain by formation of stabilizing In 2 O 3 patches under MSR conditions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Preferential Direction of Electron Transfers at a Dye–Metal Oxide Interface with an Insulating Fluorinated Self-Assembled Monolayer and MgO

Slowing non-desirable electron transfer reactions at metal oxide-dye interfaces is important for many technologies. Specifically, after an interfacial photoinduced charge separation event at a metal oxide-dye interface, it is critically important to limit the rate of electron transfer reactions back to sensitizers and to limit electron transfer reactions between the electrolyte and the metal oxide. Ruthenium-based dyes at metal oxide interfaces are widely used in many fields; however, these dyes often have poor surface insulation resulting in fast recombination kinetics with transition metal-based redox shuttles in an electrolyte. This work explores two semiconductor surface modification strategies designed to minimize recombination events of electrons in TiO 2 with oxidized redox shuttles using a fluorinated siloxane insulator (PFTS) and a metal oxide insulator (MgO) with a well-known Ru dye, B11. Additionally, the influence of these treatments on the rate and duration of photoinduced interfacial charge separation at the TiO 2 -dye interface was examined. The TiO 2 -dye-redox shuttle systems were studied via dye-sensitized solar cell current-voltage curve, incident photon-to-current conversion efficiency, small-modulated photovoltage transient, time-correlated single photon counting, and transient absorption spectroscopy measurements. MgO was found to decrease the rate of the electron transfer reaction from the metal oxide to the electrolyte, decrease the rate of the electron transfer reaction to the oxidized dye from TiO 2 , increase the electron transfer reaction rate from a reduced redox shuttle to an oxidized dye, and decrease the electron injection rate from the photoexcited dye to TiO2. Interestingly, PFTS was found to desirably improve on these rates relative to MgO or untreated TiO 2 . Here, a model based on electrostatic interactions is presented to explain the exceptional behavior of PFTS with DFT computational analysis of PFTS supporting this model.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The Strength of the Metal. Aluminum Oxide Interface

The strength of the interface between metals and aluminum oxide is an important factor in the successful operation of devices found throughout modern technology. One finds the interface in machine tools, jet engines, and microelectronic integrated circuits. The strength of the interface, however, should be strong or weak depending on the application. The diverse technological demands have led to some general ideas concerning the origin of the interfacial strength, and have stimulated fundamental research on the problem. Present status of our understanding of the source of the strength of the metal - aluminum oxide interface in terms of interatomic bonds are reviewed. Some future directions for research are suggested.

Pepper, S. V.↗

A transition in mechanisms of size dependent electrical transport at nanoscale metal-oxide interfaces

As device miniaturization approaches nanoscale dimensions, interfaces begin to dominate electrical properties. Here the system archetype Au/SrTiO{sub 3} is used to examine the origin of size dependent transport properties along metal-oxide interfaces. We demonstrate that a transition between two classes of size dependent electronic transport mechanisms exists, defined by a critical size ε. At sizes larger than ε an edge-related tunneling effect proportional to 1/D (the height of the supported Au nanoparticle) is observed; interfaces with sizes smaller than ε exhibit random fluctuations in current. The ability to distinguish between these mechanisms is important to future developments in nanoscale device design.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

GaAs-oxide interface states - A gigantic photoionization effect and its implications to the origin of these states

Gigantic photoionization was discovered on GaAs-oxide interfaces leading to the discharge of deep surface states with rates exceeding 1000 times those of photoionization transitions to the conduction band. It exhibits a peak similar to acceptor-donor transitions and is explained as due to energy transfer from photo-excited donor-acceptor pairs to deep surface states. This new process indicates the presence of significant concentrations of shallow donor and acceptor levels not recognized in previous interface models.

Lagowski, J.↗

Variation of sign and magnitude of the Dzyaloshinskii-Moriya interaction of a ferromagnet with an oxide interface

We demonstrate that both the magnitude and sign of the Dzyaloshinskii-Moriya interaction can be tuned by modifying the type and thickness of an oxide layer adjacent to a ferromagnet. In this work, we focus on Ti/Cu/Co 90 Fe 10 /Ta($d_{\text{Ta}}$)/Oxide/Ta structures, where the Ta interlayer thickness $d_{\text{Ta}}$ ranged from 0 nm to 3 nm, followed by an exposure to oxygen and “Oxide” can mean CoFeO x and/or TaO x . We used Brillouin light scattering spectroscopy to directly determine the volume-averaged Dzyaloshinskii-Moriya interaction from the nonreciprocity of the spin-wave frequency. The magnitude of the interfacial Dzyaloshinskii-Moriya interaction, $D_{\text{DMI}}$, ranges from – 0.17 to +0.09(±0.02) mJ/m 2 , clearly showing a change in both sign and magnitude, with an increase of Ta interlayer thickness. The modification of the oxide interface allows us to systematically change the hybridization of the 3$\textit{d}$–CoFe orbitals from 3$\textit{d}$–5$\textit{d}$ to 3$\textit{d}$–2$\textit{p}$ and analyze the influence on the Dzyaloshinskii-Moriya interaction. Importantly, we can vary the Dzyaloshinskii-Moriya interaction while maintaining a relatively small value of the damping parameter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Solution Monolayer Epitaxy for Tunable Atomically Sharp Oxide Interfaces

Abstract Interfaces play an important role in a variety of devices including transistors, solar cells, and memory components. Atomically sharp interfaces are essential to avoid charge traps that hamper efficient device operation. Sharp interfaces usually require thin‐film fabrication techniques involving ultrahigh vacuum and high substrate temperatures. A new self‐limiting wet chemical process for deposition of epitaxial layers from alkoxide precursors is presented. This method is fast, cheap, and yields perfect interfaces as validated by various analysis techniques. It allows the growth of heterostructures with half‐unit‐cell resolution. The method is demonstrated by designing a hole‐type oxide interface SrTiO 3 /BaO/LaAlO 3 . It is shown that transport through this interface exhibits properties of mixed electron–hole contributions with hole mobility exceeding that of electrons.

Ron, Alon↗

On the Importance of Metal–Oxide Interface Sites for the Water–Gas Shift Reaction Over Pt/CeO2 Catalysts

The mechanism of water–gas shift reaction at the three-phase boundary of Pt/CeO2 catalysts has been investigated using density functional theory and microkinetic modeling to better understand the importance of metal–oxide interface sites in heterogeneous catalysis. Analysis of a microkinetic model based on parameters obtained from first principles suggests that both the “Redox pathway” and the “Associative carboxyl pathway with redox regeneration” could operate on Pt/CeO2 catalysts. Although (1) only few interfacial Pt atoms are found to be catalytically active at low temperatures due to strong adsorption of CO and (2) interfacial O–H bond breakage is difficult due to the high reducibility of ceria, interface sites are 2–3 orders of magnitude more active than Pt (1 1 1) and stepped Pt surface sites and therefore effectively determine the overall activity of Pt/CeO2. The high activity of Pt/CeO2 interface sites originates from a significantly enhanced water activation and dissociation at interfacial oxygen vacancies.

Environmental Molecular Sciences Laboratory↗

Tunable spin polarization and superconductivity in engineered oxide interfaces

Advances in growth technology of oxide materials allow single atomic layer control of heterostructures. In particular delta doping, a key materials’ engineering tool in today’s semiconductor technology, is now also available for oxides. Here we show that a fully electric-field-tunable spin-polarized and superconducting quasi-2D electron system (q2DES) can be artificially created by inserting a few unit cells of delta doping EuTiO 3 at the interface between LaAlO 3 and SrTiO 3 oxides. Spin polarization emerges below the ferromagnetic transition temperature of the EuTiO 3 layer (T FM = 6–8 K) and is due to the exchange interaction between the magnetic moments of Eu-4 f and of Ti-3 d electrons. Moreover, in a large region of the phase diagram, superconductivity sets in from a ferromagnetic normal state. As a result, the occurrence of magnetic interactions, superconductivity and spin–orbit coupling in the same q2DES makes the LaAlO 3 /EuTiO 3 /SrTiO 3 system an intriguing platform for the emergence of novel quantum phases in low-dimensional materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Enhancing CO 2 electroreduction with the metal–oxide interface

Here, the electrochemical CO 2 reduction reaction (CO 2 RR) typically uses transition metals as the catalysts. To improve the efficiency, tremendous efforts have been dedicated to tuning the morphology, size, and structure of metal catalysts and employing electrolytes that enhance the adsorption of CO 2 . We report here a strategy to enhance CO 2 RR by constructing the metal–oxide interface. We demonstrate that Au–CeO x shows much higher activity and Faradaic efficiency than Au or CeO x alone for CO 2 RR. In situ scanning tunneling microscopy and synchrotron-radiation photoemission spectroscopy show that the Au–CeO x interface is dominant in enhancing CO 2 adsorption and activation, which can be further promoted by the presence of hydroxyl groups. Density functional theory calculations indicate that the Au–CeO x interface is the active site for CO 2 activation and the reduction to CO, where the synergy between Au and CeO x promotes the stability of key carboxyl intermediate (*COOH) and thus facilitates CO 2 RR. Similar interface-enhanced CO 2 RR is further observed on Ag–CeO x , demonstrating the generality of the strategy for enhancing CO 2 RR.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗