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At least 55 records · Page 3

Differential ultrafast all-optical switching of the resonances of a micropillar cavity

We perform frequency- and time-resolved all-optical switching of a GaAs-AlAs micropillar cavity using an ultrafast pump-probe setup. The switching is achieved by two-photon excitation of free carriers. We track the cavity resonances in time with a high frequency resolution. The pillar modes exhibit simultaneous frequency shifts, albeit with markedly different maximum switching amplitudes and relaxation dynamics. These differences stem from the non-uniformity of the free carrier density in the micropillar, and are well understood by taking into account the spatial distribution of injected free carriers, their spatial diffusion and surface recombination at micropillar sidewalls.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Monolithic, High-Speed Fiber-Optic Switching Array for Lidar

Current fiber switch technologies use mechanical means to redirect light beams, resulting in slow switch time, as well as poor reliability due to moving parts wearing out quickly at high speeds. A non-mechanical ability to switch laser output into one of multiple fibers within a fiber array can provide significant power, weight, and costs savings to an all-fiber system. This invention uses an array of crystals that act as miniature prisms to redirect light as an electric voltage changes the prism s properties. At the heart of the electro-optic fiber-optic switch is an electro- optic crystal patterned with tiny prisms that can deflect the beam from the input fiber into any one of the receiving fibers arranged in a linear array when a voltage is applied across the crystal. Prism boundaries are defined by a net dipole moment in the crystal lattice that has been poled opposite to the surrounding lattice fabricated using patterned, removable microelectrodes. When a voltage is applied across the crystal, the resulting electric field changes the index of refraction within the prism boundaries relative to the surrounding substrate, causing light to deflect slightly according to Snell s Law. There are several materials that can host the necessary monolithic poled pattern (including, but not limited to, SLT, KTP, LiNbO3, and Mg:LiNbO3). Be cause this is a solid-state system without moving parts, it is very fast, and does not wear down easily. This invention is applicable to all fiber networks, as well as industries that use such networks. The unit comes in a compact package, can handle both low and high voltages, and has a high reliability (100,000 hours without maintenance).

Suckow, Will↗

Simulation of an intracavity Q -switched optical parametric oscillator using rate equations

Based on rate equations we have refined the model of an intracavity Q -switched optical parametric oscillator (IOPO) by taking into account the influence of self-Raman stimulated scattering. The rate equations are solved and analysed in the plane-wave approximation for a Gaussian spatial beam distribution profile under various conditions. The spatial rate equations are also solved numerically for a beam with a field distribution of the TEM{sub 00} mode. The numerical analysis shows that stimulated self-Raman scattering leads to a decrease in the output signal power and an increase in the signal pulse width. This model allows one to predict that the output signal power can be increased with increasing ratio of Raman to fundamental photon lifetimes. This suggests a practical method for determining the self-Raman gain coefficient experimentally. In addition, a multi-pulse process for the signal beam of the IOPO can be regenerated by the presented model. However, in comparison with the previous research, the presented model is more accurate and allows one to design and optimise single-resonator IOPOs.The bibliography includes 25 references. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Fast all-optical switch

An apparatus and method wherein polarization rotation in alkali vapors or other mediums is used for all-optical switching and digital logic and where the rate of operation is proportional to the amplitude of the pump field. High rates of speed are accomplished by Rabi flopping of the atomic states using a continuously operating monochromatic atomic beam as the pump.

Shay, Thomas M.↗

Role of element-specific damping in ultrafast, helicity-independent, all-optical switching dynamics in amorphous (Gd,Tb)Co thin films

Ultrafast control of the magnetization in ps timescales by fs laser pulses offers an attractive avenue for applications such as fast magnetic devices for logic and memory. However, ultrafast helicity-independent all-optical switching (HI-AOS) of the magnetization has thus far only been observed in Gd-based, ferrimagnetic amorphous (a-) rare earth-transition metal (a-RE-TM) systems, and a comprehensive understanding of the reversal mechanism remains elusive. Here, we report HI-AOS in ferrimagnetic a-Gd 22-x Tb x Co 78 thin films, from x=0 to 18, and elucidate the role of Gd in HI-AOS in a-RE-TM alloys and multilayers. Increasing Tb content results in increasing perpendicular magnetic anisotropy and coercivity, without modifying magnetization density, and slower remagnetization rates and higher critical fluences for switching but still shows picosecond HI-AOS. Simulations of the atomistic spin dynamics based on the two-temperature model reproduce these results qualitatively and predict that the lower damping on the RE sublattice arising from the small spin-orbit coupling of Gd (with L=0) is instrumental for the faster dynamics and lower critical fluences of the Gd-rich alloys. Annealing a-Gd 10 Tb 12 Co 78 leads to slower dynamics which we argue is due to an increase in damping. These simulations strongly indicate that accounting for element-specific damping is crucial in understanding HI-AOS phenomena. The results suggest that engineering the element-specific damping of materials can open up new classes of materials that exhibit low-energy, ultrafast HI-AOS.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Optically-Switched Resonant Tunneling Diodes for Space-Based Optical Communication Applications

We are developing a new type of digital photo-receiver that has the potential to perform high speed optical-to-electronic conversion with a factor of 10 reduction in component count and power dissipation. In this paper, we describe the room-temperature photo-induced switching of this InP-based device which consists of an InGaAs/AlAs resonant tunneling diode integrated with an InGaAs absorber layer. When illuminated at an irradiance of greater than 5 Wcm(exp -2) using 1.3 micromillimeter radiation, the resonant tunneling diode switches from a high-conductance to a low-conductance electrical state and exhibits a voltage swing of up to 800 mV.

Moise, T. S.↗

Effects of graphene on electro-optic switching and spontaneous polarization of a ferroelectric liquid crystal

A small quantity of graphene flakes was doped in a ferroelectric liquid crystal (FLC), and the field-induced ferroelectric electro-optic switching was found to be significantly faster in the FLC + graphene hybrid than that of the pure FLC. Further studies revealed that the suspended graphene flakes enhanced the FLC's spontaneous polarization by improving smectic-C ordering resulting from the π–π electron stacking, and reduced rotation viscosity by trapping some of the free ions of the FLC media. These effects coherently impacted the FLC-switching phenomenon, enabling the FLC molecules to switch faster on reversing an external electric field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Unidirectional multipulse helicity-independent all-optical switching in [Ni/Pt] based synthetic ferrimagnets

Nickel-platinum-based synthetic ferrimagnets (SFi's) are highly tunable and rare-earth-free materials that allow ultrafast all optical control of magnetism to be explored. This study considers a SFi composed of a ferromagnetic [Ni/Pt] multilayer and a ferromagnetic Co layer, separated by an Ir layer that mediates an antiferromagnetic coupling. Helicity-independent all optical switching (HI-AOS) between two antiparallel magnetization states is observed. AOS may be realized at increased temperature through reduction of the thickness of the Pt layers. Switching is unidirectional and has a strong dependence on the applied magnetic field history, which suggests the possible presence of a nanoscale magnetic texture that may be important in controlling AOS in SFi systems. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ultracompact High-Speed Electro-Optic Switch

We describe a coherent optical logic element susceptible of fabrication in an array format at optical wavelength-packing densities. The element offers large dynamic range, temporal storage of optical pulses, and precise clocking with no pulse loss or distortion. One- and two-pulse strategies and phase-control issues are examined.

Fork, Richard L.↗

Ultrafast optical switches using quantum wells

Colloidal quantum wells have discrete energy states and electrons in the quantum wells undergo interband and intersubband state transitions. The transmissivity of a colloidal quantum well may be tuned by actively controlling the states of the colloidal quantum wells enabling ultrafast optical switching. A primary excitation source is configured to provide a primary excitation to promote a colloidal quantum well from a ground state to a first excitation state. A secondary excitation source is configured to provide a secondary excitation to the colloidal quantum well to promote the colloidal quantum well from the first excitation state to the second excitation state with the first and second excitation states being subbands in the conduction band of the colloidal quantum well.

Diroll, Benjamin↗

Wide bandgap optical switch circuit breaker for controlling propagation of current therethrough a wide bandgap optical device

A high-voltage switch is adapted for use as a medium-voltage direct current circuit breaker, which provides a low-cost, small-footprint device to mitigate system faults. In one example, a method for operating a wideband optical device includes illuminating the wide bandgap optical device with a light within a first range of wavelengths and a first average intensity, allowing a current to propagate therethrough without substantial absorption of the current, illuminating the wide bandgap optical device with light within the first range of wavelengths and a second average intensity that is lower than the first average intensity to allow a sustained current flow though the wide bandgap optical device, and illuminating the wide bandgap optical device with light within a second range of wavelengths to stop or substantially restrict propagation of the current through the wide gap material.

Voss, Lars F.↗

Optical nonlinearities and ultrafast all-optical switching of m-plane GaN in the near-infrared

We reported a systematic investigation on the three-photon absorption (3PA) spectra and wavelength dispersion of Kerr refraction of bulk m-plane GaN crystal with both polarization E⊥c and E//c by femtosecond Z-scan technique in the near-infrared region from 760 to 1030 nm. Both 3PA spectra and Kerr refraction dispersion were in good agreement with two-band models. The calculated nonlinear figure of merit and measured ultrafast nonlinear refraction dynamics via femtosecond pump-probe with phase object method revealed that m-plane GaN would be a promising candidate for ultrafast all-optical switching and autocorrelation applications at telecommunication wavelengths.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Piezoelectric Diffraction-Based Optical Switches

Piezoelectric diffraction-based optoelectronic devices have been invented to satisfy requirements for switching signals quickly among alternative optical paths in optical communication networks. These devices are capable of operating with switching times as short as microseconds or even nanoseconds in some cases.

Spremo, Stevan↗

Ultrafast optical switching and power limiting in intersubband polaritonic metasurfaces

Highly nonlinear optical materials with fast third-order nonlinear optical response are crucial for the operation of all-optical photonic devices, such as switches for signal processing and computation, power limiters, and saturable absorbers. The nonlinear response of traditional optical materials is weak, thus requiring large light intensities to induce significant changes in their properties. Here we show that optical control of the coupling rate in subwavelength patch antennas coupled to intersubband transitions in multi-quantum-well semiconductor heterostructures can provide a giant third-order nonlinear response, on the order of 3.4 × <#comment/> 10 − <#comment/> 13 m 2 / V 2 , with a response time < <#comment/> 2 p s . We utilize this effect to realize intersubband polaritonic metasurfaces and demonstrate their operation as highly nonlinear saturable and reverse saturable absorbers, enabling optical power limiters and other elements for all-optical modulation and control. Our approach enables a plethora of compact, low-power, highly nonlinear devices with spectral, temporal, and structured wavefront responses tailored by design.

Mann, Sander A. (ORCID:0000000277420615)↗

Optically-switched submillimeter-wave oscillator and radiator having a switch-to-switch propagation delay

A submillimeter wave-generating integrated circuit includes an array of N photoconductive switches biased across a common voltage source and an optical path difference from a common optical pulse of repetition rate f sub 0 providing a different optical delay to each of the switches. In one embodiment, each incoming pulse is applied to successive ones of the N switches with successive delays. The N switches are spaced apart with a suitable switch-to-switch spacing so as to generate at the output load or antenna radiation of a submillimeter wave frequency f on the order of N f sub 0. Preferably, the optical pulse has a repetition rate of at least 10 GHz and N is of the order of 100, so that the circuit generates radiation of frequency of the order of or greater than 1 Terahertz.

Spencer, Michael G.↗

High-speed electro-optic switch with -80 dB crosstalk

Special device modeling, design and layout, and precision processing controls were employed to fabricate new balanced-bridge 2x2 and 4x4 switches on X-cut, Y-propagation LiNbO3 substrate using Ti indiffused optical waveguides. The best of these devices achieved extinction ratio and crosstalk isolation of better than 93 dB electrically (46.5 dB optically). The new switches demonstrate good reproducibility with electrical crosstalk less than -80 dB.

Pan, J. J.↗

All-optical switching of an epsilon-near-zero plasmon resonance in indium tin oxide

Abstract Nonlinear optical devices and their implementation into modern nanophotonic architectures are constrained by their usually moderate nonlinear response. Recently, epsilon-near-zero (ENZ) materials have been found to have a strong optical nonlinearity, which can be enhanced through the use of cavities or nano-structuring. Here, we study the pump dependent properties of the plasmon resonance in the ENZ region in a thin layer of indium tin oxide (ITO). Exciting this mode using the Kretschmann-Raether configuration, we study reflection switching properties of a 60 nm layer close to the resonant plasmon frequency. We demonstrate a thermal switching mechanism, which results in a shift in the plasmon resonance frequency of 20 THz for a TM pump intensity of 70 GW cm −2 . For degenerate pump and probe frequencies, we highlight an additional two-beam coupling contribution, not previously isolated in ENZ nonlinear optics studies, which leads to an overall pump induced change in reflection from 1% to 45%.

36 MATERIALS SCIENCE↗