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Most contemporary device models predict that an acceptor concentration of at least 10^16 cm^-3 is required to reach an open circuit voltage of 1 V in polycrystalline CdTe-based solar cells. While copper has traditionally been used as the de facto p-type dopant in polycrystalline cadmium telluride (CdTe) and cadmium selenide telluride (CdSeTe), reaching high acceptor concentrations has proved to be challenging in such devices due to significant dopant compensation. The acceptor concentration in copper-doped CdTe and CdSeTe typically ranges from 10^13 to 10^15 cm^-3 and routinely exhibit low external radiative efficiencies below 0.01%, limiting their implied voltage (i.e., quasi-Fermi level splitting) to approximately 900 mV. As an alternative to copper, this work explores the use of arsenic as a p-type dopant for CdTe and CdSeTe. Using a novel technique in which a thin layer of arsenic-containing material is deposited and used as a reservoir for arsenic to diffuse into a front layer of previously undoped material, this contribution demonstrates that high external radiative efficiencies are achievable, a direct result of combined high acceptor concentrations and long minority-carrier lifetimes in the absorber. This leads to improved implied voltages, and indicates that As-doping represents a promising pathway towards improving the external voltage of CdSeTe/CdTe solar cells.
We have carried out detailed studies on the epitaxy and characterization of dilute Bi-doped GaN nanostructures. A comprehensive investigation of Bi-doped GaN nanowires and quasi-film epitaxial growth conditions has been performed. Scanning electron microscopy studies show that lowering the GaBiN growth temperature causes gradual changes in top c-plane nanowire morphology due to the incremental incorporation of foreign Bi atoms. This trend is further substantiated by the secondary ion mass spectroscopy analysis of a multi-layer Bi-doped GaN quasi-film. However, it is also found that the amount of Bi incorporation into the GaN lattice is relatively independent of the N2 flow rate variation under the growth conditions investigated. Furthermore, room-temperature micro-Raman spectra show that there are additional peaks near 530, 650, and 729 cm−1 wave numbers in the Bi-doped GaN samples, which can primarily be attributed to Bi local vibrational modes, indicative of a small amount of Bi incorporation in the GaN lattice. Moreover, phonon calculations with density functional theory indicate that Bi replacing the N sites is the likely origin of the experimentally measured Raman modes. X-ray photoelectron spectroscopy measurements have also been obtained to deduce the electronic interaction between the Bi dopant atom and the GaN nanostructure. Such one-dimensional nanowires permit the synthesis of dislocation-free highly mismatched alloys due to strain relaxation, allowing efficient light absorption and charge carrier extraction that is relevant for solar energy harvesting and artificial photosynthesis.
Abstract not provided.
Abstract not provided.
The key electronic characteristics of semiinsulating GaAs, i.e., the Fermi energy, concentration, and occupancy of the midgap donor EL2, and the net concentration of ionized acceptors can all be determined from high-resolution measurements of the EL2 intracenter absorption. The procedure is based on the measurement of zero-phonon line intensity before and after the complete transfer of EL2 to its metastable state followed by thermal recovery. The procedure is quantitative, involves no fitting parameters, and unlike existing methods, is applicable even when a significant part of the EL2 is ionized.
An electrooptical characterization encompassing linearity, blooming, dark-count rate, charge-transfer efficiency (CTE), and quantum efficiency, is presented for a front/side-illuminated CCD with 512x512 format and 27x27-micron pixels. The detailed noise characteristics of the CCD-output FET are reported. While very good low light level CTE is obtained in the parallel-shift direction, CTE problems arise in the serial direction. The output FET noise is equivalent to 5-12 electrons, depending on FET operating conditions and system bandwidth.
Characteristic drop size, D sub 32, of clouds of fine liquid nitrogen particles was measured with a scattered light scanning instrument developed at NASA-Lewis. Calibration of the instrument was accomplished with suspensions of monosized polystyrene spheres and the scattered light scanner was then used to investigate the mechanism of liquid nitrogen jet disintegration in high velocity gas flow. The Sauter mean diameter, D sub 32, was found to vary inversely with nitrogen gas mass-flux raised to the 1.33 power. Values of D sub 32 varied from 5 to 25 microns and the mass-flux exponent 1.33 agrees well with theory for liquid jet breakup in high velocity gas flow. Loss of fine particles due to the high vaporization rate of liquid nitrogen was avoided by sampling the spray 1.3 cm downstream of the nozzle orifice. The presence of high velocity and thermal gradients in the gas phase also made sampling of the particles quite difficult. As a result, it was necessary to correct the measurements for background noise produced by both highly turbulent gas flow and thermally induced density gradients in the gas phase.
Dark brown molecular film deposits were found at numerous locations on the Long Duration Exposure Facility (LDEF) and have been documented in great detail by several investigators. The exact deposition mechanism for these deposits is as yet unknown, although direct and scattered atomic oxygen, and solar radiation interacting with materials outgassing products have all been implicated in the formation process. Specimens of the brown molecular film were taken from below the flange of the experimental tray located at position D10 on the LDEF. The tray was one of two, comprising the same experiment, the other being located on the wake facing side of the LDEF satellite at position B4. Having access to both trays, we were able to directly compare the effect that orientation with respect to the atomic oxygen flux vector had on the formation of the brown molecular film deposits. The film is thickest on surfaces facing toward the exterior, i.e. the tray corner, as can be seen by comparing the lee and wake aspects of the rivets. The patterns appear to be aligned not with the velocity vector but with the corner of the tray suggesting that flux to the surface is due to scattered atomic oxygen rather than direct ram impingement. The role of scattered flux is further supported by more faint plume patterns on the sides of the tray. The angle of these plumes is strongly aligned with the ram direction but the outline of the deposit implies that incident atoms are scattered by collisions with the edges of the opening resulting in a directed, but diffuse, flux of atomic oxygen to the surface. Spectral reflectance measurements in the 2 to 10 micron (4000 to 1000 wavenumbers) spectral range are presented for the film in the 'as deposited' condition and for the free standing film. The material was analyzed by FTIR (Fourier Transform Infrared) microspectroscopy using gold as the reference standard. The 'as deposited' specimen was on an aluminum rivet taken from beneath the tray flange while the free film was obtained by chipping some of the material from the rivet. The transmission spectrum over the 2 to 10 micron range for the free film is presented. This spectrum appears to be essentially the same as that presented by Crutcher et.al. for films formed at vent sites which faced into the ram direction and suggested to originate from urethanes and silicones used on the LDEF. Banks et. al. state that silicones, when exposed to atomic oxygen, release polymeric scission fragments which deposit on surfaces and form a glassy, dark contaminant layer upon further atomic oxygen exposure and solar irradiation.
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The reflectance properties of an engineering model of the Spectralon panel intended for use within an On-Board Calibrator (OBC) on the NASA Multi-angle Imaging SpectroRadiometer (MISR) instrument have been fully characterized with regard to panel uniformity and isotropy in response to three incident laser wavelengths of 442, 632.8 and 859.9 nm. A regional variation in bidirectional reflectance function (BRF) across the surface of the engineering model (EM) panel, contributing to spatial non-uniformity at the +/-2% level has been measured at all three laser wavelengths. Further, a BRF anisotropy has been identified. The mechanism causing these departures from the ideal Lambertian surface may originate in the sanding of the Spectralon surface in the final stage of preparation. This is corroborated by measurements made on a 'pressed' polytetrafluoroethylene (PTFE) panel in which a greatly reduced anisotropy in panel BRF is measured. The EM panel BRF reveals deviation from a Lambertian characteristic manifest as an off-specular peak in the forward scattering direction. A common cross-over point at an angle of reflection of around 37 at which the BRF is constant within 0.4% for an illumination angle range of ui = 30 60 is observed at all three wavelengths. Two Spectralon protoflight panels which were fabricated after the engineering model was studied were also the subject of a uniformity study over part of the area of the Spectralon panels at the 442 nm wavelength. The analysis indicated that the panel uniformity satisfies the 0.5% criterion indicating improved panel preparation. However, the off specular peak in the forward scattering direction is essentially unchanged with the cross-over point at approximately 37.
Airborne metallic particulates from industry and urban sources are highly conducting aerosols. The characterization of these pollutant particles is important for environment monitoring and protection. Because these metallic particulates are highly reflective, their effect on local weather or regional radiation budget may also need to be studied. In this work, light scattering characteristics of these metallic aerosols are studied using exact solutions on perfectly conducting spherical and cylindrical particles. It is found that for perfectly conducting spheres and cylinders, when scattering angle is larger than approx. 90 deg. the linear polarization degree of the scattered light is very close to zero. This light scattering characteristics of perfectly conducting particles is significantly different from that of other aerosols. When these perfectly conducting particles are immersed in an absorbing medium, this light scattering characteristics does not show significant change. Therefore, measuring the linear polarization of scattered lights at backward scattering angles can detect and distinguish metallic particulates from other aerosols. This result provides a great potential of metallic aerosol detection and monitoring for environmental protection.
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Abstract not provided.
Disclosed is a system and method for characterizing optical materials, using steps and equipment for generating a coherent laser light, filtering the light to remove high order spatial components, collecting the filtered light and forming a parallel light beam, splitting the parallel beam into a first direction and a second direction wherein the parallel beam travelling in the second direction travels toward the material sample so that the parallel beam passes through the sample, applying various physical quantities to the sample, reflecting the beam travelling in the first direction to produce a first reflected beam, reflecting the beam that passes through the sample to produce a second reflected beam that travels back through the sample, combining the second reflected beam after it travels back though the sample with the first reflected beam, sensing the light beam produced by combining the first and second reflected beams, and processing the sensed beam to determine sample characteristics and properties.
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