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Bidirectional MOS driver, integrated with diode matrix reduces fuse read current to only that of junction leakage and transient MOS gate charging current. No current, except junction leakage current, flows in unaddressed cells. Current required to drive MOS gate flows through unfused branch only during read mode.
This invention provides an integrated, non-volatile, high-speed random access memory. A magnetically switchable ferromagnetic or ferrimagnetic layer is sandwiched between an electrical conductor which provides the ability to magnetize the magnetically switchable layer and a magneto resistive or Hall effect material which allows sensing the magnetic field which emanates from the magnetization of the magnetically switchable layer. By using this integrated three-layer form, the writing process, which is controlled by the conductor, is separated from the storage medium in the magnetic layer and from the readback process which is controlled by the magnetoresistive layer. A circuit for implementing the memory in CMOS or the like is disclosed.
This viewgraph presentation describes radiation tests of nanocrystal (NC) memory for space systems. A nanocrystal test chip was bombarded by heavy ions from a cyclotron.
A plasma-enhanced chemical vapor deposition (PECVD) growth technique has been developed where the choice of starting substrate was found to influence the electrical characteristics of the resulting carbon nanofiber (CNF) tubes. It has been determined that, if the tubes are grown on refractory metallic nitride substrates, then the resulting tubes formed with dc PECVD are also electrically conducting. Individual CNFs were formed by first patterning Ni catalyst islands using ebeam evaporation and liftoff. The CNFs were then synthesized using dc PECVD with C2H2:NH3 = [1:4] at 5 Torr and 700 C, and approximately equal to 200-W plasma power. Tubes were grown directly on degenerately doped silicon <100> substrates with resistivity rho approximately equal to 1-5 meterohm-centimeter, as well as NbTiN. The approximately equal to 200-nanometer thick refractory NbTiN deposited using magnetron sputtering had rho approximately equal to 113 microohm-centimeter and was also chemically compatible with CNF synthesis. The sample was then mounted on a 45 beveled Al holder, and placed inside a SEM (scanning electron microscope). A nanomanipulator probe stage was placed inside the SEM equipped with an electrical feed-through, where tungsten probes were used to make two-terminal electrical measurements with an HP 4156C parameter analyzer. The positive terminal nanoprobe was mechanically manipulated to physically contact an individual CNF grown directly on NbTiN as shown by the SEM image in the inset of figure (a), while the negative terminal was grounded to the substrate. This revealed the tube was electrically conductive, although measureable currents could not be detected until approximately equal to 6 V, after which point current increased sharply until compliance (approximately equal to 50 nA) was reached at approximately equal to 9.5 V. A native oxide on the tungsten probe tips may contribute to a tunnel barrier, which could be the reason for the suppressed transport at low biases. Currents up to approximately 100 nA could be cycled, which are likely to propagate via the tube surface, or sidewalls, rather than the body, which is shown by the I-V in figure (a). Electrical conduction via the sidewalls is a necessity for dc NEMS (nanoelectromechanical system) applications, more so than for the field emission applications of such tubes. During the tests, high conductivity was expected, because both probes were shorted to the substrate, as shown by curve 1 in the I-V characteristic in figure (b). When a tube grown on NbTiN was probed, the response was similar to the approximately equal to 100 nA and is represented by curve 2 in figure (b), which could be cycled and propagated via the tube surface or the sidewalls. However, no measureable currents for the tube grown directly on Si were observed as shown by curve 3 in figure (b), even after testing over a range of samples. This could arise from a dielectric coating on the sidewalls for tubes on Si. As a result of the directional nature of ion bombardment during dc PECVD, Si from the substrate is likely re-sputtered and possibly coats the sidewalls.
National Aeronautics and Space Administration (NASA) subcontractor Wiltech contacted the NASA Electrical Lab (NE-L) and requested a failure analysis of a Solvent Purity Meter; model SP-IOOO produced by the VerTis Instrument Company. The meter, used to measure the contaminate in a solvent to determine the relative contamination on spacecraft flight hardware and ground servicing equipment, had been inoperable and in storage for an unknown amount of time. NE-L was asked to troubleshoot the unit and make a determination on what may be required to make the unit operational. Through the use of general troubleshooting processes and the review of a unit in service at the time of analysis, the unit was found to be repairable but would need the replacement of multiple components.
Cleanliness verification is required in numerous industries including spaceflight ground support, electronics, medical and aerospace. Currently at KSC requirement for cleanliness verification use solvents that environmentally unfriendly. This goal of this project is to produce an alternative cleanliness verification technique that is both environmentally friendly and more cost effective.
Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are reported. Three single event effect (SEE) phenomena are examined: single effect upsets (SEUs), single event functional interrupts (SEFIs), and catastrophic loss of ability to erase and program the device. Also, radiation results of multilevel flash technology are compared with results from single-level flash technology. These commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The single-level devices are less sensitive to SEUs than multi-level devices. The charge pump in this study survived up to 600 krads. A new high current phenomenon in high density NAND flash memories is also discussed.
The applications of adaptive optics extend across multiple sectors, encompassing areas such as LiDAR, biological and chemical sensing, and free-space optical communications. The advent of metasurfaces optics with reconfigurability has offered a versatile platform for the design of compact optical components, offering a compelling alternative to their conventional bulky counterparts. In this study, we introduce the PROWESS (Phase change Reconfigurable Optical WavEfront Synthesis System project at NASA LaRC), electrically reconfigurable metasurfaces using low-loss, high-contrast phase change material (PCM), Ge2Sb2Se4Te integrated with IR-transparent silicon microheater for various practical applications. The talk covers a reliable platform for switching large-scale PCM-based devices utilizing a microheater and an architecture for the metasurface switching within an integrated circuit configuration, which is compatible with standard foundry fabrication processes. The utilization of near- to midinfrared transparent silicon microheater in the proposed architecture opens possibilities for the development of reconfigurable transmissive optics such as filters, zoom lenses, and beam steering modules. We demonstrated switching of 140 µm × 140 µm PCM pixel, on a 200 µm × 200 µm silicon microheater for several thousand cycles. Further, we performed an in-depth investigation into the failure mechanism utilizing techniques such as transmission electron microscopy and thermal modeling. Guidelines for device performance improvement are proposed, and an improved design with larger endurance is shown in progress. With further progress, we aim to unlock the full potential of PCM-based devices and advance the field of adaptive optics with demonstrable examples including a reconfigurable beam steerer for ocean surface flash LiDAR and Navigation Doppler LiDAR for precise lunar landing missions.
The applications of adaptive optics extend across multiple sectors, encompassing areas such as LiDAR, biological and chemical sensing, and free-space communications. In this study, we report on the design, fabrication, testing, and modeling of electrically reconfigurable metasurfaces using a low-loss high contrast phase change material, Ge2Sb2Se4Te integrated with an IR-transparent silicon microheater. Through this work, we introduce a reliable architecture for switching PCM-based metasurfaces within an integrated circuit configuration which is compatible with standard foundry fabrication processes. We demonstrate the capability of controlling the transmission of electromagnetic waves through the precise stimulation of PCM-based pixels, each spanning a few hundred microns, over numerous cycles. By leveraging PCM-based pixels, we unlock the potential to create metasurfaces encompassing a diverse range of functionalities such as dielectric filters, metalens, or beam steering devices, which is governed by the design of the meta-atoms. Further, we perform an in-depth investigation into the failure mechanism utilizing techniques such as Fourier transform IR spectroscopy (FTIR), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), and thermal modeling. According to our results, due to a sharp temperature rise at the PCM/heater interface, we observe severe delamination of the PCM from the heater. More uniform PCM deposition, better adhesion at the PCM/heater interface, and a more uniform temperature distribution in the device could potentially mitigate the failure and lead to a longer life-time. By addressing these challenges, we aim to unlock the full potential of PCM-based devices and advance the field of adaptive optics.
A number of nonvolatile, low-flammability liquid oligomers and polymers based on aliphatic organic carbonate molecular structures have been found to be suitable to be blended with ethylene carbonate to make electrolytes for lithium-ion electrochemical cells. Heretofore, such electrolytes have often been made by blending ethylene carbonate with volatile, flammable organic carbonates. The present nonvolatile electrolytes have been found to have adequate conductivity (about 2 mS/cm) for lithium ions and to remain liquid at temperatures down to -5 C. At normal charge and discharge rates, lithiumion cells containing these nonvolatile electrolytes but otherwise of standard design have been found to operate at current and energy densities comparable to those of cells now in common use. They do not perform well at high charge and discharge rates -- an effect probably attributable to electrolyte viscosity. Cells containing the nonvolatile electrolytes have also been found to be, variously, nonflammable or at least self-extinguishing. Hence, there appears to be a basis for the development of safer high-performance lithium-ion cells.
The development of a technology for building electrically alterable read only memories (EAROMs) or reprogrammable read only memories (RPROMs) using a single level metal gate p channel MOS process with all conventional processing steps is outlined. Nonvolatile storage of data is achieved by the use of charged floating gate electrodes. The floating gates are charged by avalanche injection of hot electrodes through gate oxide, and discharged by avalanche injection of hot holes through gate oxide. Three extra diffusion and patterning steps are all that is required to convert a standard p channel MOS process into a nonvolatile memory process. For identification, this nonvolatile memory technology was given the descriptive acronym DIFMOS which stands for Dual Injector, Floating gate MOS.
Although Charon seems to have lost its atmosphere and surface volatiles, a lack of heating that would be sufficient to generate melting and consequent separation of the lighter and heavier nonvolatiles has probably resulted in the outer layers' retention of the primordial mix of nonvolatiles. Spectroscopically-determined relative abundances for the Charon surface should accordingly be representative of its entire mass, and thereby constitutes the basis of an understanding of Charon's origin. The study of Charon's exposed nonvolatile ices may ascertain whether the Pluto-Charon system condensed out of the solar nebula directly or from a protoplanetary nebula.
Memory technologies are divided into two categories. The first category, nonvolatile memories, are traditionally used in read-only or read-mostly applications because of limited write endurance and slow write speed. These memories are derivatives of read only memory (ROM) technology, which includes erasable programmable ROM (EPROM), electrically-erasable programmable ROM (EEPROM), Flash, and more recent ferroelectric non-volatile memory technology. Nonvolatile memories are able to retain data in the absence of power. The second category, volatile memories, are random access memory (RAM) devices including SRAM and DRAM. Writing to these memories is fast and write endurance is unlimited, so they are most often used to store data that change frequently, but they cannot store data in the absence of power. Nonvolatile memory technologies with better future potential are FRAM, Chalcogenide, GMRAM, Tunneling MRAM, and Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) EEPROM.
A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (< 4 V) and short duration (< 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.
A significant increase in sulfuric acid aerosol concentration was detected above 10 km pressure altitude during a cross-corridor flight out of Shannon on October 23, 1997. The source of this aerosol is ascribed to commercial aircraft operations in flight corridors above 10 km, because (1) a stable atmosphere prevented vertical air mass exchanges and thus eliminated surface sources, (2) air mass back trajectories documented the absence of remote continental sources, and (3) temperature profiler data showed the tropopause at least one kilometers above flight altitude throughout the flight. Particle volatility identified 70% H2SO4, 20% (NH4)2SO4 and 10% nonvolatile aerosol in the proximity of flight corridors, and (10-30)% H2SO4, up to 50% (NH4)2SO4, and (40-60)% nonvolatile aerosols in air that was not affected by aircraft operations below 10 km. Only a very small fraction of the nonvolatile particles (determined with a condensation nucleus counter) could be morphologically identified as soot aerosol (validated by scanning electron microscopy of wire impactor samples). The newly formed H2SO4 particles did not measurably affect surface area and volume of the background aerosol due to their small size, hence did not affect radiative transfer directly.
The oligatomic (mirror) thin film memory technology is a suitable candidate for general purpose spaceborne applications in the post-1975 time frame. Capacities of around 10 to the 8th power bits can be reliably implemented with systems designed around a 335 million bit module. The recommended mode was determined following an investigation of implementation sizes ranging from an 8,000,000 to 100,000,000 bits per module. Cost, power, weight, volume, reliability, maintainability and speed were investigated. The memory includes random access, NDRO, SEC-DED, nonvolatility, and dual interface characteristics. The applications most suitable for the technology are those involving a large capacity with high speed (no latency), nonvolatility, and random accessing.
Silicate spherules larger than 100 microns were extracted from 100 kg of box core samples of Pacific red clay taken in the mid-Pacific at a depth of 5 km, and the concentration of nonvolatile trace elements was determined for three spheres. One of the spheres shows excellent resemblance to C1 chondrite nonvolatile trace-element abundance patterns, and the relative abundances of the other two spheres are also very similar to those of C1 chondrites. One of these two spheres is depleted in Ir and Ru, while the other is depleted for Ni and Cr; possible explanations for the depletions are considered. Since the elemental abundances of the third sphere match the abundances of C1 chondrites, it is suggested that this sphere must be of extraterrestrial origin.
The subject interface measurements are described for the Ion Auxiliary Propulsion System (IAPS) flight test of two 8-cm thrusters. The diagnostic devices and the effects to be measured include: 1) quartz crystal microbalances to detect nonvolatile deposition due to thruster operation; 2) warm and cold solar cell monitors for nonvolatile and volatile (mercury) deposition; 3) retarding potential ion collectors to characterize the low energy thruster ionic efflux; and 4) a probe to measure the spacecraft potential and thruster generated electron currents to biased spacecraft surfaces. The diagnostics will also assess space environmental interactions of the spacecraft and thrusters. The diagnostic data will characterize mercury thruster interfaces and provide data useful for future applications.