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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Continuous-wave planar laser induced fluorescence with a fast camera

We present planar, laser induced fluorescence (PLIF) measurements of the velocity-resolved distribution function of ions in a plasma using a modulated, narrow linewidth, continuous-wave laser. Plasma emission is acquired with a high frame rate camera, and the laser light is spread into a thin sheet so that an entire plane of the plasma is imaged at each interrogation wavelength. Fourier analysis is conducted on each pixel of the images to separate the modulated fluorescent emission from the background light. Argon ion temperatures and bulk flow maps are reported in a helicon plasma source, and standard single-point LIF measurements provide validation of the PLIF measurement.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Laser-induced fluorescence of filament-produced plasmas

Self-guided ultrafast laser filaments are a promising method for laser beam delivery and plasma generation for standoff and remote detection of elements and isotopes via filament-induced breakdown spectroscopy (FIBS). Yet, there are several challenges associated with the practical application of FIBS, including delivery of sufficient laser energy at the target for generating plasma with a copious amount of emission signals for obtaining a high signal-to-noise ratio. Here, in this study, we use laser-induced fluorescence (LIF) to boost the emission signal and reduce self-reversal in the spectral profiles. Ultrafast laser filaments were used to produce plasmas from an Al 6061 alloy target at various standoff distances from 1 to 10 m. For LIF emission enhancement, a narrow linewidth continuous-wave laser was used in resonance with a 394.40 nm Al I resonant transition, and the emission signal was monitored from the directly coupled transition at 396.15 nm. Emission signal features of Al I are significantly enhanced by resonant excitation. In addition, LIF of filament ablation plumes reduces the self-reversal features seen in the thermally excited spectral profiles. Time-resolved two-dimensional fluorescence spectroscopy was performed for evaluating the optical saturation effects, which are found to be non-negligible due to high Al atomic densities in the filament-produced plasmas.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Vibrational modes and crystallographic structure of Cd 3 As 2 and (Cd 1-x Zn x ) 3 As 2 epilayers

Low-temperature Raman scattering is used to study the crystal structure of molecular-beam epitaxially grown layers of the Dirac semimetal Cd 3 As 2 and its related alloy (Cd 1-x Zn x ) 3 As 2 . The combination of narrow-linewidth spectra, multiple growth directions and full polarization analysis allows improved accuracy in identifying the irreducible representation of over 57 Raman-active vibrations. Several disagreements with previous identifications are found. Structurally, the results agree with the centrosymmetric I41/acd space group of bulk-grown Cd 3 As 2 and are clearly distinct from the Raman spectra of nanoscale platelets and wires. Three-fold twinning is seen in (112) Cd 3 As 2 grown on (111) zincblende substrates corresponding to the three possible tetragonal orientations. In dilute (Cd 1-x Zn x ) 3 As 2 , phonons have a frequency and scattering amplitude dependence on Zn concentration that is continuous with Cd 3 As 2 but at least one frequency is absent at the alloy endpoint, preventing a simple one-mode description of the alloy phonon.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Singly occupied 4⁢𝑓 antiferromagnetic insulators: CePO 4 and CeVO 4

Rare-earth containing wide band gap oxides, which provide spin-photon interface and narrow linewidth optical emission, are getting significant attention as the most promising candidate materials in advancing quantum transduction and memories. Here, in this work, from ab initio calculations, we identify antiferromagnetic ground states in structurally preferred monoclinic CePO 4 and tetragonal CeVO 4 exhibiting localized occupied and unoccupied Ce 4⁢𝑓 states with 4⁢𝑓−4⁢𝑓 transition characteristics. Interestingly, in CePO 4 , O 2⁢𝑝 and P 3⁢𝑝 states hybridize negligibly with Ce 4⁢𝑓 states, while in CeVO 4 , V 3⁢𝑑 and O 2⁢𝑝 states hybridize and appear as extended states in between the occupied and unoccupied Ce 4⁢𝑓 states. Here, phonon calculations and analysis identify and differentiate Raman active phonon modes along with the spin phonon coupling of Ce in both CePO 4 and CeVO 4 that ultimately lead to different 4⁢𝑓 ground-state crystal-field multiplets, which are critical to accurately describe electronic transitions for foundational quantum transduction and memories. Further, the identified 𝐶 1 site symmetry of Ce, lacking inversion symmetry in CePO 4 , is relevant for quantum memories and 𝐷 2⁢𝑑 site symmetry of Ce exhibiting inversion symmetry in CeVO 4 is relevant for quantum transduction.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

High-resolution spectroscopy of neutral Yb atoms in a solid Ne matrix

Here, we present an experimental and theoretical study of the absorption and emission spectra of Yb atoms in a solid Ne matrix at a resolution of 0.025 nm. Five absorption bands were identified as due to transitions from the 4 f 14 5 d 0 6 s 2 1 S 0 ground-state configuration to 4 f 14 5 d 0 6 s 6 p and 4 f 13 5 d 1 6 s 2 configurations. The two lowest-energy bands were assigned to outer-shell transitions to 6 s 6 p 3 P 1 and 1 P 1 atomic states and displayed the structure of a broad doublet and an asymmetric triplet, respectively. The remaining three higher-frequency bands were assigned to inner-shell transitions to distinct J = 1 states arising from the 4 f 13 5 d 1 6 s 2 configuration and were highly structured with narrow linewidths. A classical simulation was performed to identify the stability and symmetry of possible trapping sites in the Ne crystal. It showed that the overarching 1 + 2 structure of the high-frequency bands could be predominantly ascribed to crystal-field splitting in the axial field of a 10-atom vacancy of C 4 v symmetry. Their prominent substructures were shown to be manifestations of phonon sidebands associated with the zero-phonon lines on each crystal-field state. Unprecedented for a metal–rare-gas system, resolution of individual phonon states on an allowed electronic transition was possible under excitation spectroscopy which reflects the semiquantum nature of solid Ne. In contrast to the absorption spectra, emission spectra produced by steady-state excitation into the 1 P 1 absorption band consisted of simple, unstructured fluorescence bands.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2023

Distinguishing erbium dopants in Y 2 O 3 by site symmetry: Ab initio theory of two spin-photon interfaces

Here, we present a first-principles study of the defect formation and electronic structure of erbium (Er)–doped yttria (Y 2 O 3 ). This is an emerging material for spin-photon interfaces in quantum information science due to the narrow-linewidth optical emission from Er dopants at standard telecommunication wavelengths and their potential for quantum memories and transducers. We calculate formation energies of neutral and negatively and positively charged Er dopants and find the charge-neutral configuration to be the most stable, consistent with experiment. Of the two substitutional sites of Er for Y, the C 2 (more relevant for quantum memories) and C 3i (more relevant for quantum transduction), we identify the former as possessing the lowest formation energy. The electronic properties are calculated using the Perdew-Burke-Ernzerhof functional along with the Hubbard U parameter and spin-orbit coupling, which yields a ~ 6 μ B orbital and a ~ 3 μ B spin magnetic moment, and 11 electrons in the Er 4 f shell, confirming the formation of charge-neutral Er 3+ . This standard density functional theory approach underestimates the band gap of the host and lacks a first-principles justification for U . To overcome these issues we performed screened hybrid functional calculations, including a negative U for the 4 f orbitals, with mixing (α) and screening (w) parameters. These produced robust electronic features with slight modifications in the band gap and the 4 f splittings depending on the choice of tuning parameters. We also computed the many-particle electronic excitation energies and compared them with experimental values from photoluminescence.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Dispersive Dark Excitons in van der Waals Ferromagnet CrI 3

Spin-flip dark excitons are optical-dipole-forbidden quasiparticles with remarkable potential in optoelectronics, especially when they are realized within cleavable van der Waals materials. Despite this potential, dark excitons have not yet been definitively identified in ferromagnetic van der Waals materials. Here, we report two dark excitons in a model ferromagnetic material CrI 3 using high-resolution resonant inelastic x-ray scattering and show that they feature narrower linewidths compared to the bright excitons previously reported in this material. These excitons are shown to have spin-flip character, to disperse as a function of momentum, and to change through the ferromagnetic transition temperature. Given the versatility of van der Waals materials, these excitons hold promise for new types of magneto-optical functionality.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Modeling frequency instability in high-quality resonant experiments

Modern resonant sensing tools can achieve increasingly high quality factors, which correspond to extremely narrow linewidths. In such systems, time variation of the resonator’s natural frequency can potentially impact its ability to accumulate power and its resulting sensitivity. One such example is the Dark SRF experiment, which utilizes superconducting radio frequency (SRF) cavities with quality factors of Q ∼ 10 10 . Microscopic deformations of the cavity lead to stochastic jittering of its resonant frequency with amplitude 20 times its linewidth. Naively, one may expect this to lead to a large suppression in accumulated power. In this work, we study in detail the effects of frequency instability on high-quality resonant systems, utilizing the Dark SRF experiment as a case study. We show that the timescale of jittering is crucial to determining its effect on power accumulation. Namely, when the resonant frequency varies sufficiently quickly, the system accumulates power as if there were no jittering at all. This implies that the sensitivity of a jittering resonator is comparable to that of a stable resonator. In the case of Dark SRF, we find that jittering only induces a ∼ 10 % loss in power. Our results allow the dark-photon exclusion bound from Dark SRF’s pathfinder run to be refined, leading to a constraint that is an order of magnitude stronger than previously reported (corresponding to a signal-to-noise ratio that is four orders of magnitude larger). This result represents the world-leading constraint on dark photons over a wide range of masses below 6 μ eV and translates to the best laboratory-based limits on the photon mass m γ < 2.9 × 10 - 48 g .

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Exploring a quantum-information-relevant magnonic material: Ultralow damping at low temperature in the organic ferrimagnet V[TCNE]x

Quantum information science and engineering require novel low-loss magnetic materials for magnon-based quantum-coherent operations. The search for low-loss magnetic materials, traditionally driven by applications in microwave electronics near room temperature, has gained additional constraints from the need to operate at cryogenic temperatures for many applications in quantum information science and technology. Whereas yttrium iron garnet (YIG) has been the material of choice for decades, the emergence of molecule-based materials with robust magnetism and ultra-low damping has opened new avenues for exploration. Specifically, thin films of vanadium tetracyanoethylene (V[TCNE]x) can be patterned into the multiple, connected structures needed for hybrid quantum elements and have shown room-temperature Gilbert damping (α = 4 × 10−5) that rivals the intrinsic (bulk) damping otherwise seen only in highly polished YIG spheres (far more challenging to integrate into arrays). Here, the authors present a comprehensive and systematic study of the low-temperature magnetization dynamics for V[TCNE]x thin films, with implications for their application in quantum systems. These studies reveal a temperature-driven, strain-dependent magnetic anisotropy that compensates the thin-film shape anisotropy and the recovery of a magnetic resonance linewidth at 5 K that is comparable to room-temperature values (roughly 2 G at 9.4 GHz). The authors can account for these variations of the V[TCNE]x linewidth within the context of scattering from very dilute paramagnetic impurities and anticipate additional linewidth narrowing as the temperature is further reduced.

Yusuf, H. (ORCID:0000000194627928)↗
DOE OSTI2021

High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 µm

Stable high-power narrow-linewidth operation of the 2.05–2.1 µm GaSb-based diode lasers was achieved by utilizing the sixth-order surface-etched distributed Bragg reflector (DBR) mirrors. The DBR multimode devices with 100 µm wide ridge waveguides generated ~850 mW in the continuous wave (CW) regime at 20°C. The device CW output power was limited by thermal rollover. The laser emission spectrum was defined by Bragg reflector reflectivity at all operating currents in a wide temperature range. Finally, the devices operated at DBR line with detuning from gain peak exceeding 10 meV.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Distributed Brillouin fiber laser sensor

Brillouin fiber sensors can provide distributed strain and temperature measurements over long distances in standard off-the-shelf fiber by measuring the Brillouin frequency shift as a function of position along a fiber. The primary drawback of these systems is their limited sensitivity, which results from the challenge in identifying the Brillouin frequency shift to within a small fraction of the Brillouin linewidth. In this work, we introduce a technique that overcomes this fundamental limitation by establishing a series of lasing modes that experience Brillouin amplification at discrete spatial locations in the test fiber. The linewidth narrowing and high intensity associated with the lasing transition enable precise measurements of this lasing frequency. As an initial demonstration, we present a sensor that simultaneously excites 40 lasing modes in a 400 m fiber, providing a measurement of the strain at 40 discrete locations with a spatial resolution of 4 m. Each sensor exhibits a minimum detectable strain as low as 4 nε/Hz 1/2 with a dynamic range of >5 mε and a bandwidth of ~10 kHz. As the first demonstration that Brillouin lasing can be used for distributed fiber sensing, this work establishes an approach that could enable ultra-high strain sensitivity using off-the-shelf fiber.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Investigation of Superluminescent Diodes for Smart Lighting Systems. Final Report

The solid-state lighting ecosystem has evolved very rapidly over the last few years, with significant improvements in the technical performance of light-emitting diodes (LEDs) and the commoditization of LED-based lighting fixtures. As the performance of conventional lighting products begins to saturate, there is growing market interest in “Lighting as a Service” applications that will leverage advanced systems to impart new functionalities to lighting and improve energy efficiency, human health, and productivity. These “Smart Lighting” systems will include high-performance light sources, specialized sensors, and dynamic controls to deliver high quality, energy efficient, color tunable lighting with customized spatial light delivery and integrated visible light communication capability. To achieve these capabilities, smart lighting systems will place greater demands on the performance of light sources. Highly efficient sources with additional functionalities compared to conventional LEDs, such as small form factor, large modulation bandwidth, and spatially coherent output beams, will be required. While laser diodes have been proposed as potential sources for smart lighting systems, they also exhibit several properties that pose challenges, such as temporal coherence, extremely high spatial coherence, and ultra-narrow linewidths. To address these issues, we propose an investigation of an alternative device architecture known as a superluminescent diode (SLD). SLDs are similar in form to ridge laser diodes and share many of the same characteristics, such as stimulated emission operation, spatially coherent output, small form factor, and the potential for large modulation bandwidth. However, the operating principle for SLDs is distinct from laser diodes in that SLDs lack a strong cavity feedback mechanism, resulting in spatially coherent but temporally incoherent light output. Thus, SLDs may address the issues with laser diodes for lighting, while simultaneously maintaining some of the desirable characteristics of both laser diodes and LEDs. The objectives of this proposal are to design, grow, and fabricate blue (450 nm) SLDs on polar c-plane and nonpolar m-plane free-standing GaN substrates, and to evaluate their potential as sources in smart lighting systems through basic device characterization and detailed investigations of their efficiency droop and modulation bandwidth. The primary scientific aims of this work are to understand the fundamental role of optical gain in the superluminescent (non-lasing) regime on efficiency droop and modulation bandwidth in III-nitride emitters and to understand the effects of higher optical gain on SLD performance by comparing polar c-plane and nonpolar m-plane SLDs. The University of New Mexico (UNM) will collaborate with Sandia National Laboratories (SNL) and the Center for Integrated Nanotechnologies to design, fabricate, grow, and characterize the SLDs. UNM will perform the design and epitaxial growth, while SNL will focus on the fabrication and device characterization. The novelty of the proposed work includes the first comprehensive theoretical and experimental investigations of efficiency droop and the first investigation of modulation bandwidth in GaN-based emitters operating in the superluminescent regime. Moreover, the comparison of c-plane and m-plane SLDs will enable the first analysis of the effects of higher optical gain on the device performance. The development of high-performance GaN-based SLDs may enable efficiency gains and improved functionality in next-generation smart lighting systems.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2023

Combined Coherent Manipulation and Single-Shot Measurement of an Electron Spin in a Quantum Dot (Final Technical Report)

Semiconductor quantum dots (QDs) are promising candidates to act as single-photon sources and/or quantum bits in future optical quantum information applications. Their excellent optical properties such as high brightness, single-photon purity, and narrow linewidth have potential utility in many areas. One challenge is to control the energy levels of the QD without using a magnetic field. The AC Stark effect offers the opportunity to do this. We have demonstrated record-large AC Stark shifts of the energy states of a single charged QD. We showed that the shifts can be applied in a spin-selective manner by controlling the polarization of the laser producing the AC Stark effect. In order to characterize the effect, we developed a novel spectral filtering scheme to discriminate the high-power AC Stark laser from the QD fluorescence. We also developed a compact, low-cost, homemade polarimeter to help control the polarization of the AC Stark laser, which enabled the spin selectivity of the AC Stark effect. With the practical capabilities thus developed, we learned that the spin-selective AC Stark effect causes electron spin pumping, which in turn causes nuclear spin pumping via the hyperfine interaction. The nuclear spin pumping causes a mean field Zeeman interaction between the nuclear spin ensemble and the electron trapped in the QD, resulting in the so-called Overhauser shift. The magnitude of the Overhauser shift and the measured linewidth of the QD’s optical transitions enabled characterization of the mean nuclear spin polarization and fluctuations. The potentially rapid (ns-scale) control of the QD energy levels and nuclear spin polarization will enable measurements of electron and nuclear spin polarization in the absence of any real magnetic field, which is a completely unique capability. The ability to rapidly apply a spin-selective AC Stark effect in the presence of a weak real magnetic field will allow control of the polarization selection rules of the transitions, enabling all single-qubit operations on the electron spin, i.e., initialization, coherent manipulation, and quantum non-demolition measurement.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Optical and microstructural characterization of Er 3+ doped epitaxial cerium oxide on silicon

Rare-earth ion dopants in solid-state hosts are ideal candidates for quantum communication technologies, such as quantum memories, due to the intrinsic spin–photon interface of the rare-earth ion combined with the integration methods available in the solid state. Erbium-doped cerium oxide (Er:CeO 2 ) is a particularly promising host material platform for such a quantum memory, as it combines the telecom-wavelength (~ 1.5 μm) 4f–4f transition of erbium, a predicted long electron spin coherence time when embedded in CeO 2 , and a small lattice mismatch with silicon. In this work, we report on the epitaxial growth of Er:CeO 2 thin films on silicon using molecular beam epitaxy, with controlled erbium concentration between 2 and 130 parts per million (ppm). We carry out a detailed microstructural study to verify the CeO 2 host structure and characterize the spin and optical properties of the embedded Er 3+ ions as a function of doping density. In as-grown Er:CeO 2 in the 2–3 ppm regime, we identify an EPR linewidth of 245(1) MHz, an optical inhomogeneous linewidth of 9.5(2) GHz, an optical excited state lifetime of 3.5(1) ms, and a spectral diffusion-limited homogeneous linewidth as narrow as 4.8(3) MHz. We test the annealing of Er:CeO 2 films up to 900 °C, which yields narrowing of the inhomogeneous linewidth by 20% and extension of the excited state lifetime by 40%.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Coherent heteroepitaxial growth of I-III-VI 2 Ag(In,Ga)S 2 colloidal nanocrystals with near-unity quantum yield for use in luminescent solar concentrators

Colloidal Ag(In,Ga)S 2 nanocrystals (AIGS NCs) with the band gap tunability by their size and composition within visible range have garnered surging interest. High absorption cross-section and narrow emission linewidth of AIGS NCs make them ideally suited to address the challenges of Cd-free NCs in wide-ranging photonic applications. However, AIGS NCs have shown relatively underwhelming photoluminescence quantum yield (PL QY) to date, primarily because coherent heteroepitaxy has not been realized. Here, we report the heteroepitaxy for AIGS-AgGaS 2 (AIGS-AGS) core-shell NCs bearing near-unity PL QYs in almost full visible range (460 to 620 nm) and enhanced photochemical stability. Key to the successful growth of AIGS-AGS NCs is the use of the Ag-S-Ga(OA) 2 complex, which complements the reactivities among cations for both homogeneous AIGS cores in various compositions and uniform AGS shell growth. The heteroepitaxy between AIGS and AGS results in the Type I heterojunction that effectively confines charge carriers within the emissive core without optically active interfacial defects. AIGS-AGS NCs show higher extinction coefficient and narrower spectral linewidth compared to state-of-the-art heavy metal-free NCs, prompting their immediate use in practicable applications including displays and luminescent solar concentrators (LSCs).

42 ENGINEERING↗
DOE OSTI2022

36 Hz integral linewidth laser based on a photonic integrated 4.0 m coil resonator

Laser stabilization sits at the heart of many precision scientific experiments and applications, including quantum information science, metrology, and atomic timekeeping. Many of these systems narrow the laser linewidth and stabilize the carrier by use of Pound–Drever–Hall (PDH) locking to a table-scale, ultrahigh quality factor (Q), vacuum spaced Fabry–Perot reference cavity. Integrating these cavities to bring characteristics of PDH stabilization to the chip scale is critical to reducing their size, cost, and weight, and enabling a wide range of portable and system-on-chip applications. We report a significant advance in integrated laser linewidth narrowing, stabilization, and noise reduction by use of a photonic integrated 4.0 m long coil resonator to stabilize a semiconductor laser. We achieve a 36 Hz 1 / π <#comment/> -integral linewidth, Allan deviation of 1.8 × <#comment/> 10 − <#comment/> 13 at 10 ms measurement time, and a 2.3 kHz/s drift—to the best of our knowledge, the lowest integral linewidth and highest stability demonstrated for an integrated waveguide reference cavity. This performance represents over an order of magnitude improvement in integral linewidth and frequency noise over previous integrated waveguide PDH stabilized reference cavities and bulk-optic and integrated injection locked approaches, and over two orders of magnitude improvement in frequency and phase noise than integrated injection locked approaches. Two different wavelength coil designs are demonstrated, stabilizing lasers at 1550 nm and 1319 nm. The resonator is bus-coupled to a 4.0 m long coil, with a 49 MHz free spectral range, mode volume of 1.0 × <#comment/> 10 10 µ <#comment/> m 3 , and 142 million intrinsic Q , fabricated in a CMOS compatible, ultralow loss silicon nitride waveguide platform. Our measurements and simulations show that the thermorefractive noise floor for this particular cavity is reached for frequencies down to 20 Hz in an ambient environment with simple passive vibration isolation and without vacuum or thermal isolation. The thermorefractive noise limited performance is estimated to yield an 8 Hz 1 / π <#comment/> -integral linewidth and Allan deviation of 5 × <#comment/> 10 − <#comment/> 14 at 10 ms, opening a stability regime that heretofore has been available only in fundamentally non-integrated systems. These results demonstrate the potential to bring the characteristics of laboratory-scale stabilized lasers to the integrated, wafer-scale compatible chip scale, and are of interest for a number of applications in quantum technologies and atomic, molecular, and optical physics, and with further developments below 10 Hz linewidth, can be highly relevant to ultralow noise microwave generation.

Liu, Kaikai (ORCID:0000000213609646)↗
DOE OSTI2020

1.3-µm passively mode-locked quantum dot lasers epitaxially grown on silicon: gain properties and optical feedback stabilization

Abstract This work reports on an investigation of the optical feedback in an InAs/InGaAs passively mode-locked quantum dot (QD) laser epitaxially grown on silicon. Under the stably-resonant optical feedback condition, experiments demonstrate that the radio-frequency linewidth is narrowed whatever the bias voltage applied on the saturable absorber (SA) is; on the other hand, the effective linewidth enhancement factor of the device increases with the reverse bias voltage on the SA, hence it is observed that such an increase influences the mode-locking dynamic and the stability of device under optical feedback. This work gives insights for stabilizing epitaxial QD mode-locked lasers on silicon which is meaningful for their applications in future large-scale silicon electronic and photonic applications requiring low power consumption as well as for high-speed photonic analog-to-digital conversion, intrachip/interchip optical clock distribution and recovery.

Dong, Bozhang (ORCID:0000000158266723)↗