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Results for “microelectronics”
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Analog Quantum Simulation of the Dynamics of Open Quantum Systems with Quantum Dots and Microelectronic Circuits
We introduce a general setup for the analog quantum simulation of the dynamics of open quantum systems based on semiconductor quantum dots electrically connected to a chain of quantum RLC electronic circuits. The dots are chosen to be in the regime of spin-charge hybridization to enhance their sensitivity to the RLC circuits while mitigating the detrimental effects of unwanted noise. In this context, we establish an experimentally realizable map between the hybrid system and a qubit coupled to thermal harmonic environments of arbitrary complexity that enables the analog quantum simulation of open quantum systems. We assess the utility of the simulator by numerically exact emulations that indicate that the experimental setup can faithfully mimic the intended target even in the presence of its natural inherent noise. We further provide a detailed analysis of the physical requirements on the quantum dots and the RLC circuits needed to experimentally realize this proposal that indicates that the simulator can be created with existing technology. The approach can exactly capture the effects of highly structured non-Markovian quantum environments typical of photosynthesis and chemical dynamics, and offer clear potential advantages over conventional and even quantum computation. The proposal opens a general path for effective quantum dynamics simulations based on semiconductor quantum dots.
Using Graphene to Enable Trusted Microelectronics. Final LDRD Report
This report summaries the work of a 2-year LDRD project aimed at using graphene in integrated circuits in ways that would both obfuscate their function and enhance their level of trust. We have studied (both experimentally and theoretically) process steps, optical properties, design/layout of circuits, and many kinds of analytical techniques. Our conclusion is that graphene shows promise in this application, but additional work must be done to improve compatibility with existing CMOS manufacturing facilities particularly in the area of contamination.
Diversity for Microelectronics Lifecycle Security
In this work we examine approaches for using implementation diversity to disrupt or disable hardware trojans. We explore a variety of general frameworks for building diverse variants of circuits in voting architectures, and examine the impact of these on attackers and defenders mathematically and empirically. This work is augmented by analysis of a new majority voting technique. We also describe several automated approaches for generating diverse variants of a circuit and empirically study the overheads associated with these. We then describe a general technique for targeting functional circuit modifications to hardware trojans, present several specific implementations of this technique, and study the impact that they have on trojanized benchmark circuits.
Export Administration Regulations (EAR) and Radiation Tolerant Microelectronics
Sandia National Laboratories was asked to provide a technical feasibility assessment on whether programmability is a viable means to address the radiation levels in the Export Administration Regulations (EAR). Most (if not all) modern Complementary Metal Oxide Semiconductor (CMOS) technologies will exceed at least one of the EAR radiation criteria inherently, there is no longer anything “special” about domestic parts or technologies that exceed EAR radiation criteria. A modern part today is not “designed” to exceed EAR criteria and in fact a part would need to be “specially designed” to fail to meet all of these criteria. And although it is possible to design a part to fail to meet the EAR radiation criteria in an unprogrammed state, such a part would be difficult to design in some technologies, may not achieve the ultimate radiation levels desired, would fail to meet core reliability principles, and may be unsuitable for high consequence applications.
Sputter Deposition of Al3Sc Films for Microelectronics Fabrication.
Abstract not provided.
Local stress measurements in microelectronic devices using HREBSD.
Abstract not provided.
Emerging Ferroelectric Materials for Microelectronic Technologies.
Abstract not provided.
Ferroelectric microelectronic devices utilizing NbN / Nb electrodes with thin film ferroelectric (Hf,Zr)O2.
Abstract not provided.
Simple self-consistent method for excited states in density functional theory to characterize defect-derived behavior in wide-band-gap-based microelectronic materials
This final report summarizes the results of the Laboratory Direct Research and Development (LDRD) Project Number 229740. Wide band gap semiconductors such as gallium nitride (GaN) have features highly desirable for multiple mission electronic applications. Realization of their potential requires atomic-scale understanding of electronic behavior. The principal experimental tools for electronically probing defects in GaN are chemically undifferentiating and lack a practical theoretical counterpart needed to identify and characterize specific defects. This project investigated whether a simple idea for modeling defect excited states and their associated photoluminescence (PL) energies is viable, as a path to accelerate the understanding of defect behavior and gain valuable insights into engineering new electronic materials and devices. The research implemented a non-self-consistent total-energy evaluation of a Koopmans-type estimation of an excited electronic state energy in density functional theory (DFT) calculations, and proceeded to design, implement, and assess a self-consistent method for computing excited states based upon an OCcupation-Constrained-DFT (occ-DFT). The occ-DFT was verified in test calculations of defect excited states and validated against well-characterized PL data for 3d transition metal defects in GaN. The method proved stable and robust in computing excited states and gave accurate predictions compared to experimental PL data. The combined ground state/excited-state capability proved capable of chemically differentiating defect species in GaN. In application to 3d dopants in GaN, we reinterpreted extensive experimental literature, proposed new defects as prospective candidates for use in quantum information applications, and outlined design strategies to create and exploit these potentially useful functional defects in GaN.
Microelectronics that are continuously verifiable by their users…as inspired by cryptography
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Atomically Precise Ultra-High Performance 2D MicroElectronics
Zyvex Labs has created several p-n junction devices with a variety of gaps between the boron and phosphorus electrodes, from 0-7.7 nm, which are now being measured. We have developed a different contacting process based on palladium disilicide rather than aluminium to improve the reliability of the device contacts. Preliminary measurements indicate that these new contacts are successfully contacting the buried dopant layers, which are intact after the overgrowth process. Modelling of the p-n junction properties has made good progress, with the model matching previous published data, and modelling of n-p-n junction devices has begun. This now awaits experimental validation.
Machine Learning of Plasma Science for Next Generation Microelectronics (Project Final Report)
Low temperature plasmas (LTPs) are an enabling technology behind reducing device dimensions and the continuation of Moore’s Law. It is estimated that 40-45% of all process steps necessary to manufacture semiconductor devices involve LTPs. However, challenges in plasma process design and continuous incorporation of novel materials for new device architectures are pushing the limits of what is possible with current plasma technology. For example, creating higher aspect ratio structures and etching features at the atomic scale both require finer control of the ion energy/velocity at wafer surfaces. To support these types of future innovations in the plasma processing systems that Sandia and the DOE rely upon, we have developed novel diagnostics, simulations, and machine learning capabilities to discover, characterize, and predict plasma phenomena affecting the ion energy/velocity distribution function (IEDF). These efforts also supported research program development and external collaboration with industry and academia through Sandia’s Plasma Research Facility (PRF). This report will focus on the following topics and accomplishments of this three year LDRD project, briefly summarized.
Frequency Domain Thermoreflectance for Bond Evaluation in Heterogeneously Integrated Microelectronics
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Why Should AI-Enhanced Design of Microelectronics Care About Adversarial Machine Learning?
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Functional Ferroelectrics for Harsh Environment Microelectronics
Summarizes ferroelectric work at Sandia