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At least 55 records · Page 3

Relationship between the ideal tensile strength and the friction properties of metals in contact with nonmetals and themselves

The adhesion and friction properties of metals in contact with diamond, boron nitride, silicon carbide, manganese-zinc ferrite, and the metals themselves in vacuum was investigated. An estimate of the ideal uniaxial tensile was obtained in terms of the equilibrium surface energy, interplanar spacing of the planes perpendicular to the tensile axis, and the Young's modulus of elasticity. The coefficient of friction for metals was found to be related to the ideal tensile strength of metals. The higher the strength of the metal, the lower the coefficient of friction.

Miyoshi, K.↗

Correlation of tensile and shear strengths of metals with their friction properties

The relation between the theoretical tensile and the shear strengths and the friction properties of metals in contact with diamond, boron nitride, silicon carbide, manganese-zinc ferrite, and the metals themselves in vacuum was investigated. The relationship between the actual shear strength and the friction properties of the metal was also investigated. An estimate of the theoretical uniaxial tensile strength was obtained in terms of the equilibrium surface energy, interplanar spacing of the planes perpendicular to the tensile axis, and the Young's modulus of elasticity. An estimate of the theoretical shear strength for metals was obtained from the shear modulus, the repeat distance of atoms in the direction of shear of the metal and the interplanar spacing of the shear planes. The coefficient of friction for metals was found to be related to the theoretical tensile, theoretical shear, and actual shear strengths of metals. The higher the strength of the metal, the lower the coefficient of friction.

Miyoshi, K.↗

Development of Thick-Film Thermoelectric Microcoolers Using Electrochemical Deposition

Advanced thermoelectric microdevices integrated into thermal management packages and low power, electrical source systems are of interest for a variety of space and terrestrial applications. By shrinking the size of the thermoelements, or legs, of these devices, it becomes possible to handle much higher heat fluxes, as well as operate at much lower currents and higher voltages that are more compatible with electronic components. The miniaturization of state-of-the-art thermoelectric module technology based on Bi2Te3 alloys is limited due to mechanical and manufacturing constraints for both leg dimensions (100-200 gm thick minimum) and the number of legs (100-200 legs maximum). We are investigating the development of novel microdevices combining high thermal conductivity substrate materials such as diamond, thin film metallization and patterning technology, and electrochemical deposition of thick thermoelectric films. It is anticipated that thermoelectric microcoolers with thousands of thermocouples and capable of pumping more than 200 W/sq cm over a 30 to 60 K temperature difference can be fabricated. In this paper, we report on our progress in developing an electrochemical deposition process for obtaining 10-50 microns thick films of Bi2Te3 and its solid solutions. Results presented here indicate that good quality n-type Bi2Te3, n-type Bi2Te(2.95)Se(0.05) and p-type Bi(0.5)Sb(1.5)Te3 thick films can be deposited by this technique. Some details about the fabrication of the miniature thermoelements are also described.

Fleurial, J.-P.↗

Ceres Revealed in a Grain of Salt

Introduction: Zag and Monahans (1998) are H chondrite regolith breccias containing 4.5 giga-year-old halite crystals which contain abundant inclusions of aqueous fluids, solids and organics. These all originated on a cryo-volcanically-active C class asteroid, probably 1 Ceres; the halite was transported to the regolith of the H chondrite parent asteroid, potentially 6 Hebe. Detailed analysis of these solids will thus potentially reveal the mineralogy of Ceres. Mineralogy of solids in the Monahans Halite Solid grains are present in the halites, which were entrained within the mother brines during eruption, including material from the interior and surface of the erupting body. The solids include abundant, widely variable organics that could not have been significantly heated (which would have resulted in the loss of fluids from the halite). Our analyses by Raman microprobe, SEM/EDX, synchrotron X-ray diffraction, UPLC-FD/QToF-MS, C-XANES and TEM reveal that these trapped grains include macromolecular carbon (MMC) similar in structure to CV3 chondrite matrix carbon, aliphatic carbon compounds, olivine (Fo99-59), high- and low-Ca pyroxene, feldspars, phyllosilicates, magnetite, sulfides, metal, lepidocrocite, carbonates, diamond, apatite and zeolites. Conclusions: The halite in Monahans and Zag derive from a water and carbon-rich object that was cryo-volcanically active in the early solar system, probably Ceres. The Dawn spacecraft found that Ceres includes C chondrite materials. Our samples include both protolith and aqueously-altered samples of the body, permitting understanding of alteration conditions. Whatever the halite parent body, it was rich in a wide variety of organics and warm, liquid water at the solar system's dawn.

Zolensky, M. E.↗

A novel means to generate high pressure

Diamond anvil cells are the most popular means of generating pressures above 2 GPa. However, in many experiments, such as nuclear magnetic resonance and x-ray absorption, the metallic pressurizing gasket (which confines much of the sample) represents an occluding barrier that requires a low Z gasket material (e.g., Be), a split gasket, or other means to enable better coupling of the sample to electromagnetic radiation. In this paper, we demonstrate a novel method for generating high pressures that confines the sample just above the plane of the gasket by using a diamond with a laser hole drilled into the center of the tip. The sample is then confined by the hole, which is sealed by a flat gasket that fits over the hole. When load is applied to the diamonds, metal flows from the deformed gasket into the hole thereby pressurizing the sample similarly to how a piston pressurizes gas inside a cylinder. The pressurized sample is above the metallic gasket plane just inside the tip of the diamond, and thus easily accessible via x rays or visible light that skims just above the plane of the gasket providing an enhanced aperture of radiation collection. Furthermore, we have demonstrated the utility of this method by obtaining Raman spectra of SnC 2 O 4 and x-ray diffraction spectra of seleno-DL-cystine, all at high pressures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Athermal phonon collection efficiency in diamond crystals for low mass dark matter detection

Here, we explored the efficacy of lab-grown diamonds as potential target materials for the direct detection of sub-GeV dark matter (DM) using metallic magnetic calorimeters (MMCs). Diamond, with its excellent phononic properties and the low atomic mass of the constituent carbon, can play a crucial role in detecting low mass dark matter particles. The relatively long electron-hole pair lifetime inside the crystal may provide discrimination power between the DM-induced nuclear recoil events and the background-induced electron recoil events. Utilizing the fast response times of the MMCs and their unique geometric versatility, we deployed a novel methodology for quantifying phonon dynamics inside diamond crystals. We demonstrated that lab-grown diamond crystals fabricated via the chemical vapor deposition (CVD) technique can satisfy the stringent quality requirements for sub-GeV dark matter searches. The high-quality polycrystalline CVD diamond showed a superior athermal phonon collection efficiency compared to that of the reference sapphire crystal, and achieved energy resolution 62.7 eV at the 8.05 keV copper fluorescence line. With this energy resolution, we explored the low-energy range below 100 eV and confirmed the existence of so-called low-energy excess (LEE) reported by multiple cryogenic experiments.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Deposition Of Cubic BN On Diamond Interlayers

Thin films of polycrystalline, pure, cubic boron nitride (c-BN) formed on various substrates, according to proposal, by chemical vapor deposition onto interlayers of polycrystalline diamond. Substrate materials include metals, semiconductors, and insulators. Typical substrates include metal-cutting tools: polycrystalline c-BN coats advantageous for cutting ferrous materials and for use in highly oxidizing environments-applications in which diamond coats tend to dissolve in iron or be oxidized, respectively.

Ong, Tiong P.↗

Correlation of ideal and actual shear strengths of metals with their friction properties

The relation between the ideal and actual shear strengths and friction properties of clean metals in contact with clean diamond, boron nitride, silicon carbide, manganese-zinc ferrite, and the metals themselves in vacuum is discussed. An estimate of the ideal shear strength for metals is obtained from the shear modulus, the repeat distance of atoms in the direction of shear of the metal, and the interplanar spacing of the shearing planes. The coefficient of friction for metals is shown to be correlated with both the ideal and actual shear strength of metals. The higher the strength of the metal, the lower the coefficient of friction occurs.

Miyoshi, K.↗

High-pressure metallization of FeO and implications for the earth's core

The phase diagram of FeO has been experimentally determined to pressures of 155 GPa and temperatures of 4000 K using shock-wave and diamond-cell techniques. A metallic phase of FeO is observed at pressures greater than 70 GPa and temperatures exceeding 1000 K. The metallization of FeO at high pressures implies that oxygen can be present as the light alloying element of the earth's outer core, in accord with the geochemical predictions of Ringwood (1977 and 1979). The high pressures necessary for this metallization suggest that the core has acquired its composition well after the initial stages of the earth's accretion. Direct experimental observations at elevated pressures and temperatures indicate that core-forming alloy can react chemically with oxides such as those forming the mantle. The core and mantle may never have reached complete chemical equilibrium, however. If this is the case, the core-mantle boundary is likely to be a zone of active chemical reactions.

Knittle, Elise↗

Application of surface analysis to solve problems of wear

Results are presented for the use of surface analytical tools including field ion microscopy, Auger emission spectroscopy analysis (AES), cylindrical mirror Auger analysis and X-ray photoelectron spectroscopy (XPS). Data from the field ion microscope reveal adhesive transfer (wear) at the atomic level with the formation of surface compounds not found in the bulk, and AES reveals that this transfer will occur even in the presence of surface oxides. Both AES and XPS reveal that in abrasive wear with silicon carbide and diamond contacting the transition metals, the surface and the abrasive undergo a chemical or structural change which effects wear. With silicon carbide, silicon volatilizes leaving behind a pseudo-graphitic surface and the surface of diamond is observed to graphitize.

Buckley, D. H.↗

Pick-and-Place Transfer of Arbitrary-Metal Electrodes for van der Waals Device Fabrication

Van der Waals electrode integration is a promising strategy to create nearly perfect interfaces between metals and 2D materials, with advantages such as eliminating Fermi-level pinning and reducing contact resistance. However, the lack of a simple, generalizable pick-and-place transfer technology has greatly hampered the wide use of this technique. Here, we demonstrate the pick-and-place transfer of prefabricated electrodes from reusable polished hydrogenated diamond substrates without the use of any sacrificial layers due to the inherent low-energy and dangling-bond-free nature of the hydrogenated diamond surface. The technique enables transfer of arbitrary-metal electrodes and an electrode array, as demonstrated by successful transfer of eight different elemental metals with work functions ranging from 4.22 to 5.65 eV. We also demonstrate the electrode array transfer for large-scale device fabrication. The mechanical transfer of metal electrodes from diamond to van der Waals materials creates atomically smooth interfaces with no interstitial impurities or disorder, as observed with cross-section high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy. As a demonstration of its device application, we use the diamond transfer technique to create metal contacts to monolayer transition metal dichalcogenide semiconductors with high-work-function Pd, low-work-function Ti, and semimetal Bi to create n- and p-type field-effect transistors with low Schottky barrier heights. We also extend this technology to air-sensitive materials (trilayer 1T’ WTe 2 ) and other applications such as ambipolar transistors, Schottky diodes, and optoelectronics. This highly reliable and reproducible technology paves the way for new device architectures and high-performance devices.

2D materials↗

Universal diamond edge Raman scale to 0.5 terapascal and implications for the metallization of hydrogen

The recent progress in generating static pressures up to terapascal values opens opportunities for studying novel materials with unusual properties, such as metallization of hydrogen and high-temperature superconductivity. However, an evaluation of pressure above ~0.3 terapascal is a challenge. We report a universal high-pressure scale up to ~0.5 terapascal, which is based on the shift of the Raman edge of stressed diamond anvils correlated with the equation of state of Au and does not require an additional pressure sensor. According to the new scale, the pressure values are substantially lower by 20% at ~0.5 terapascal compared to the extrapolation of the existing scales. We compare the available data of H 2 at the highest static pressures. We show that the onset of the proposed metallization of molecular hydrogen reported by different groups is consistent when corrected with the new scale and can be compared with various theoretical predictions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Strength of tantalum to 276 GPa determined by two x-ray diffraction techniques using diamond anvil cells

Tantalum (Ta) is a metal that has useful properties that make it useful in extreme environments. It is therefore important to understand how Ta performs in such extreme conditions by accurately measuring its properties. In this work, the yield strength of tantalum has been measured at pressures up to 276 GPa using axial and radial x-ray diffraction (XRD) methods in diamond anvil cells (DAC). We measured strength using XRD in a radial DAC to 50 GPa, in an axial DAC to 60 GPa using diamonds with standard flat culets, and in a final experiment to 276 GPa using toroidal diamond anvils. The radial XRD data were refined using the Material Analysis Using Diffraction (MAUD) Rietveld software package to extract lattice strain and the yield strength. The axial data were refined using the General Structure Analysis System (GSAS) II and a linewidth method was used to calculate the yield strength. The yield strength measured near ambient pressure was found to be 0.5 GPa and increased with pressure up to 50 GPa, where the yield strength plateaued at a value of 2.4 GPa. At pressures above 60 GPa, the strength increased again to a maximum value of 9 GPa at the highest pressure of 276 GPa. Here, the data from the three experiments show good agreement between the methods and previously reported experimental data. This agreement illustrates the value of axial diffraction data for material strength determination and allows for measurements at multihundreds of GPa using toroidal DACs.

36 MATERIALS SCIENCE↗

Thermal Characterization for a Modular 3-D Multichip Module

NASA Goddard Space Flight Center has designed a high-density modular 3-D multichip module (MCM) for future spaceflight use. This MCM features a complete modular structure, i.e., each stack can be removed from the package without damaging the structure. The interconnection to the PCB is through the Column Grid Array (CGA) technology. Because of its high-density nature, large power dissipation from multiple layers of circuitry is anticipated and CVD diamond films are used in the assembly for heat conduction enhancement. Since each stacked layer dissipates certain amount of heat, designing effective heat conduction paths through each stack and balancing the heat dissipation within each stack for optimal thermal performance become a challenging task. To effectively remove the dissipated heat from the package, extensive thermal analysis has been performed with finite element methods. Through these analyses, we are able to improve the thermal design and increase the total wattage of the package for maximum electrical performance. This paper provides details on the design-oriented thermal analysis and performance enhancement. It also addresses issues relating to contact thermal resistance between the diamond film and the metallic heat conduction paths.

Fan, Mark S.↗

Impact Shock Origin of Diamonds in Ureilite Meteorites

The origin of diamonds in ureilite meteorites is a timely topic in planetary geology as recent studies have proposed their formation at static pressures >20 GPain a large planetary body, like diamonds formed deep within the Earth ́s mantle. We investigated fragments of three diamond-bearing ureilites (two from the Almahata Sitta polymict ureilite and one from the NWA 7983 main group ureilite). In NWA7983 we found an intimate association of large monocrystalline diamonds (up to atleast 100 μm), nanodiamonds, nanographite, and nanometric grains of metallic iron,cohenite, troilite and likely schreibersite. The diamonds show a striking texture pseudo morphing inferred original graphite laths.The silicates in NWA 7983 recorda high degree of shock metamorphism. The presence of both large mono crystalline diamonds and nano diamonds in a highly shocked ureilite can be explained by catalyzed transformation from graphite during an impact shock event characterized by peak pressures possibly as low as 15 GPa for relatively long duration (on the scale of few seconds). The formation of “large” (as opposed to nano-) diamond crystals could have been enhanced by the catalytic effect of metallic Fe-Ni-C liquid coexisting with graphite. We found no evidence that formation of micrometer(s)sized diamonds or associated Fe-S-P phases in ureilites require high static pressures and long formation times. It is unlikely that any of the diamonds in ureilites formed in bodies as large as Mars or Mercury.

Fabrizio Nestola↗

Optical evidence for the metallization of Xenon at 132(5) GPa

Xe has been compressed in a diamond-anvil cell to approximately 200 GPa. The metallization of Xe by band-gap closure was investigated by obtaining optical data in both the metallic and insulating states. In the metallic state, the pressure dependence of the plasma frequency was determined from absorption data fitted with a free-electron model. In the insulating state, the pressure dependence of the band gap was determined from absorption data fitted with an indirect-band-gap model. The optical data indicate that the insulator-to-metal transition in Xe occurs at 132(5) GPa.

Goettel, Kenneth A.↗

Diamond thin film temperature and heat-flux sensors

Diamond film temperature and heat-flux sensors are developed using a technology compatible with silicon integrated circuit processing. The technology involves diamond nucleation, patterning, doping, and metallization. Multi-sensor test chips were designed and fabricated to study the thermistor behavior. The minimum feature size (device width) for 1st and 2nd generation chips are 160 and 5 micron, respectively. The p-type diamond thermistors on the 1st generation test chip show temperature and response time ranges of 80-1270 K and 0.29-25 microseconds, respectively. An array of diamond thermistors, acting as heat flux sensors, was successfully fabricated on an oxidized Si rod with a diameter of 1 cm. Some problems were encountered in the patterning of the Pt/Ti ohmic contacts on the rod, due mainly to the surface roughness of the diamond film. The use of thermistors with a minimum width of 5 micron (to improve the spatial resolution of measurement) resulted in lithographic problems related to surface roughness of diamond films. We improved the mean surface roughness from 124 nm to 30 nm by using an ultra high nucleation density of 10(exp 11)/sq cm. To deposit thermistors with such small dimensions on a curved surface, a new 3-D diamond patterning technique is currently under development. This involves writing a diamond seed pattern directly on the curved surface by a computer-controlled nozzle.

Aslam, M.↗