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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Total-Ionizing-Dose Effects on Read Noise of MLC 3-D NAND Memories T

This paper analyzes the total ionizing dose (TID) effects on noise characteristics of commercial multi-level-cell (MLC) 3-D NAND memory technology during the read operation. Additionally, the chips were exposed to a Co-60 gamma-ray source for up to 100 krad(Si) of TID. We find that the number of noisy cells in the irradiated chip increases with TID. Bit-flip noise was more dominant for cells in an erased state during irradiation compared to programmed cells.

3-D NAND Flash↗
DOE OSTI2023

Towards generic memory forensic framework for programmable logic controllers

A Programmable Logic Controller (PLC) is a microprocessor-based controller that is used to automate physical processes in critical infrastructure and various other industries and manufacturing sectors. Initially, PLCs were completely isolated from the Internet, and cyber security was not incorporated at the time of development. The introduction of industry 4.0 and the evolution of ICS systems to communicate over public IP addresses from the Internet enhanced productivity and efficiency, but Internet connectivity exposed the systems and their vulnerabilities, which led to an increase in cyber attacks. When a system is sabotaged/compromised, security analysts need to get to the root cause of the attack as quickly as possible to recover the system. To do so, memory forensic analysis is critical to provide a unique insight into the run-time memory activities and extract a reliable source of evidence. In this paper, we analyze the memory structure of the Schneider Electric Modicon M221 PLC. To build a memory profile, we reverse engineer the communication protocol and conduct differential analysis to gain knowledge about the structure of the memory and the low-level representation of control logic instructions. We then identify dynamic and static memory regions by modifying different project fields and conducting differential analysis, which allows us to identify boundaries of critical memory structures and extract important forensic artifacts that can be found in the memory. The Python implementation of the memory profile can help reduce the time and effort required for manual analysis in case of cyber incident or system failure.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Memory forensic analysis of a programmable logic controller in industrial control systems

In industrial control systems (ICS), programmable logic controllers (PLCs) are used to automate physical processes such as nuclear plants and power grid stations, and are often subject to cyber attacks. As in conventional IT domain, the memory analysis of the PLCs can help answer important forensic questions about the attack, such as the presence of malicious firmware, injection of modified control logic (the program running on the PLC), and manipulation of I/O devices (e.g., sensors and actuators). Unlike conventional IT domain, PLCs have heterogeneous hardware architecture, proprietary firmware and control software, making it challenging to employ a unified framework for their memory forensics. For merely extracting artifacts of forensic importance, reverse-engineering the firmware is a tedious task, and the effort needs to be repeated for every PLC model. As a community, a step-wise approach to tackle this challenge is to analyze the memory of specific PLCs, and subsequently find a generic framework applicable to all PLCs. Our work is a step forward in this direction. By following a methodology that focuses on the functional layer of PLCs instead of reverse engineering the firmware, we analyze the digital forensic artifacts available in a common PLC, Allen-Bradley ControlLogix 1756-L61. Before diving into the memory dump, we analyze the PLC control software to create a list of important artifacts that are sure to exist in the PLC memory dump. The approach employs a setup where PLC control software RSLogix-5000 is connected to the PLC, and the memory dump can be obtained as and when needed. We create test cases that sequentially highlight each category of artifacts, followed by an examination of the resultant impact on memory. After attaining the listed artifacts, we employ conventional string and known data searches to extract interesting information present in this PLC's memory. The memory analysis profile, presented as a Python library and shared with the community, can help a forensic investigator to readily extract forensic artifacts from the same model's controller. The adopted approach may help researchers in creating memory profile of other PLCs, and ultimately formulating a generic PLC memory analysis framework.

Rais, Muhammad Haris↗
DOE OSTI2020

Fractionation of Lignin for Selective Shape Memory Effects at Elevated Temperatures

We report a facile approach to control the shape memory effects and thermomechanical characteristics of a lignin-based multiphase polymer. Solvent fractionation of a syringylpropane-rich technical organosolv lignin resulted in selective lignin structures having excellent thermal stability coupled with high stiffness and melt-flow resistance. The fractionated lignins were reacted with rubber in melt-phase to form partially networked elastomer enabling selective programmability of the material shape either at 70 °C, a temperature that is high enough for rubbery matrix materials, or at an extremely high temperature, 150 °C. Utilizing appropriate functionalities in fractionated lignins, tunable shape fixity with high strain and stress recovery, particularly high-stress tolerance were maintained. Detailed studies of lignin structures and chemistries were correlated to molecular rigidity, morphology, and stress relaxation, as well as shape memory effects of the materials. The fractionation of lignin enabled enrichment of specific lignin properties for efficient shape memory effects that broaden the materials’ application window. Electron microscopy, melt-rheology, dynamic mechanical analysis and ultra-small angle neutron scattering were conducted to establish morphology of acrylonitrile butadiene rubber (NBR)-lignin elastomers from solvent fractionated lignins.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Bit error protection in cache memories

A computing device having a cache memory that is configured in a write-back mode is described. A cache controller in the cache memory acquires, from a record of bit errors that are present in each of a plurality of portions of the cache memory, a number of bit errors in a portion of the cache memory. The cache controller detects a coherency state of data stored in the portion of the cache memory. Based on the coherency state and the number of bit errors, the cache controller selects an error protection from among a plurality of error protections. The cache controller uses the selected error protection to protect the data stored in the portion of the cache memory from errors.

Kalamatianos, John↗
DOE OSTI2021

Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications

Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H2B(pz)2}2(bipy)], where pz = tris(pyrazol-1-yl)-borohydride and bipy = 2,2′-bipyridine, voltage-controlled isothermal changes in the electronic structure and spin state have been demonstrated and are accompanied by changes in conductance. Higher conductance is seen with [Fe{H2B(pz)2}2(bipy)] in the high spin state, while lower conductance occurs for the low spin state. Plausibly, there is the potential here for low-cost molecular solid-state memory because the essential molecular thin films are easily fabricated. However, successful device fabrication does not mean a device that has a practical value. Here, we discuss the progress and challenges yet facing the fabrication of molecular multiferroic devices, which could be considered competitive to silicon.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Fast Sideband Control of a Weakly Coupled Multimode Bosonic Memory

Circuit quantum electrodynamics (cQED) with superconducting cavities coupled to nonlinear circuits like transmons offers a promising platform for hardware-efficient quantum information processing. We address critical challenges in realizing this architecture by weakening the dispersive coupling while also demonstrating fast, high-fidelity multimode control by dynamically amplifying gate speeds through transmon-mediated sideband interactions. This approach enables transmon-cavity SWAP gates, for which we achieve speeds up to 30 times larger than the bare dispersive coupling. Combined with transmon rotations, this allows for efficient, universal state preparation in a single cavity mode, though achieving unitary gates and extending control to multiple modes remains a challenge. In this work, we overcome this by introducing two sideband control strategies: (1) a shelving technique that prevents unwanted transitions by temporarily storing populations in sideband-transparent transmon states and (2) a method that exploits the dispersive shift to synchronize sideband transition rates across chosen photon-number pairs to implement transmon-cavity SWAP gates that are selective on photon number. We leverage these protocols to prepare Fock and binomial code states across any of ten modes of a multimode cavity with millisecond cavity coherence times. We demonstrate the encoding of a qubit from a transmon into arbitrary vacuum and Fock state superpositions, as well as entangled NOON states of cavity mode pairs— a scheme extendable to arbitrary multimode Fock encodings. Furthermore, we implement a new binomial encoding gate that converts arbitrary transmon superpositions into binomial code states in $\qty{4}{\micro\second}$ (less than $1/\chi$), achieving an average post-selected final state fidelity of $\qty{96.3}{\percent}$ across different fiducial input states.

Huang, Jordan [Rutgers U., Piscataway]↗
DOE OSTI2022

Programmable soft valves for digital and analog control

In soft devices, complex actuation sequences and precise force control typically require hard electronic valves and microcontrollers. Existing designs for entirely soft pneumatic control systems are capable of either digital or analog operation, but not both, and are limited by speed of actuation, range of pressure, time required for fabrication, or loss of power through pull-down resistors. Using the nonlinear mechanics intrinsic to structures composed of soft materials—in this case, by leveraging membrane inversion and tube kinking—two modular soft components are developed: a piston actuator and a bistable pneumatic switch. These two components combine to create valves capable of analog pressure regulation, simplified digital logic, controlled oscillation, nonvolatile memory storage, linear actuation, and interfacing with human users in both digital and analog formats. Three demonstrations showcase the capabilities of systems constructed from these valves: 1) a wearable glove capable of analog control of a soft artificial robotic hand based on input from a human user’s fingers, 2) a human-controlled cushion matrix designed for use in medical care, and 3) an untethered robot which travels a distance dynamically programmed at the time of operation to retrieve an object. This work illustrates pathways for complementary digital and analog control of soft robots using a unified valve design.

42 ENGINEERING↗
DOE OSTI2020

Dynamic frequency control in power networks

Node controllers in power distribution networks in accordance with embodiments of the invention enable dynamic frequency control. One embodiment includes a node controller comprising a network interface a processor; and a memory containing a frequency control application; and a plurality of node operating parameters describing the operating parameters of a node, where the node is selected from a group consisting of at least one generator node in a power distribution network wherein the processor is configured by the frequency control application to calculate a plurality of updated node operating parameters using a distributed process to determine the updated node operating parameter using the node operating parameters, where the distributed process controls network frequency in the power distribution network; and adjust the node operating parameters.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Chalcogenide phase-change material advances programmable terahertz metamaterials: a non-volatile perspective for reconfigurable intelligent surfaces

Terahertz (THz) waves have gained considerable attention in the rising 6G communication due to their large bandwidth. However, the cost and power consumption become the major constraints for the commercialization of 6G THz systems as the frequency increases. Reconfigurable intelligent surface (RIS) comprising active metasurfaces and digital controllers has been proposed for beamforming in the 6G multiple-input-multiple-output systems, showing good potential to suppress the system size, weight, and power consumption (SWaP). Currently, their controlling diodes can hardly work up to THz frequencies. Therefore, several active stimuli have been investigated as alternatives. Among them, chalcogenide phase-change material Ge 2 Sb 2 Te 5 (GST) addresses large modulation depth, picosecond switching speed, and non-volatile properties. Notably, the non-volatile GST may enable RIS systems with memory and low control power. This work briefly reviews the advances of GST-tuned THz metamaterials (MTMs), discusses the current obstacles to overcome, and gives a perspective of GST applications in the rising 6G communications.

6G↗
DOE OSTI2021

Instructions for performing multi-line memory accesses

A system is described that performs memory access operations. The system includes a processor in a first node, a memory in a second node, a communication interconnect coupled to the processor and the memory, and an interconnect controller in the first node coupled between the processor and the communication interconnect. Upon executing a multi-line memory access instruction, the processor prepares a memory access operation for accessing, in the memory, a block of data including at least some of each of at least two lines of data. The processor then causes the interconnect controller to use a single remote direct memory access memory transfer to perform the memory access operation for the block of data via the communication interconnect.

Roberts, David A.↗
DOE OSTI2023

Tuple checkout with notify in coordination namespace system

A system and method for notifying a process about a creation or removal event of a named data element (NDE) in a coordination namespace distributed memory system. A controller runs methods to: generate a tuple corresponding to data generated by a requesting process, the tuple having a tuple name and data value; and generate a notification indicator in a pending notification list to indicate to one or more processes a notification of the creation or removal event associated with the corresponding tuple. Upon detecting the event performed on the tuple by a second process, the method further searches for NDEs in the distributed memory system having the same tuple name, and in response to determining an existence of an associated pending notification record in a pending notification list of records, notify each corresponding process of the one or more processes indicated in the list of the creation or removal event.

Jacob, Philip↗
DOE OSTI2020

Distributed gather/scatter operations across a network of memory nodes

Devices, methods, and systems for distributed gather and scatter operations in a network of memory nodes. A responding memory node includes a memory; a communications interface having circuitry configured to communicate with at least one other memory node; and a controller. The controller includes circuitry configured to receive a request message from a requesting node via the communications interface. The request message indicates a gather or scatter operation, and instructs the responding node to retrieve data elements from a source memory data structure and store the data elements to a destination memory data structure. The controller further includes circuitry configured to transmit a response message to the requesting node via the communications interface. The response message indicates that the data elements have been stored into the destination memory data structure.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

All-optical reconfiguration of single silicon-vacancy centers in diamond for non-volatile memories

Strain engineering is vital for tuning the optical and spin properties of solid-state color centers, enhancing spin coherence and compensating emission wavelength shift. Here, we develop an all-optical approach to directly modify the local strain of color centers at the nanoscale by migrating the nearby defect. High-power pulsed optical irradiation triggers defect migration, which subsequently leads to the redistribution of the local crystal lattice of the host material. This redistribution alters the strain experienced by nearby color centers. Using silicon-vacancy centers in diamond, we validate this method and demonstrate a ground state splitting enhancement of up to 1.8 THz. Unlike conventional methods, our approach requires no external fields or nanostructure modifications, enabling non-volatile strain control and optical memory functionality across wide temperature ranges. Its local, permanent nature offers a scalable path for enhancing spin coherence in large-scale quantum systems and has potential applications in photonic machine learning.

Nanoscale devices↗
DOE OSTI2024

Controlling reversible phase transitions in rare-earth nickelates for novel memory devices

Resistive switching in correlated complex oxides is lucrative for emerging applications in neuromorphic computing, and densely scaled non-volatile memory. Electrical conductance of such complex oxides can be controllable switched across multiple orders of magnitude by either (a) electroforming a conduction channel (e.g., in tungsten oxide), or (b) inducing Mott-Hubbard transition (e.g., in rare-earth nickelates)– both via controlled migration of defects (such as oxygen vacancies) under applied bias. Nevertheless, the promise of such defect-driven electronic transitions are far from realized due to a lack of fundamental understanding of the atomic-scale processes that underlie migration and spatiotemporal evolution of oxygen vacancies over nano-to-mesoscopic length/timescales under applied electric field. In this project, we employ a synergistic integration of density functional theory (DFT) calculations, ab initio/classical molecular dynamics (AIMD/CMD) simulations, machine learning (ML), precision synthesis, and multi-modal X-ray imaging experiments to address this knowledge gap. Such an integrated approach offers to elucidate the correlations between subtle structural distortion and oxidation states; treat localized charge carriers; describe defect/ion transport in the presence of electric field; and, in turn, greatly advance the current understanding of microstructural evolution in complex oxides under applied bias. The fundamental knowledge gained from this work will enable precise control over hierarchical defect structures and unravel new routes to manipulate resistance states in complex oxides. This, in turn, will accelerate design of novel devices with desired set of neural functionalities, and high-speed densely-scaled resistive random access memory technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Effect of Gamma Radiation on TaOₓ ECRAM

Electrochemical random access memory (ECRAM) is an emerging three-terminal nonvolatile memory (NVM) with highly controllable channel conductance which is promising for use as an analog memory (or synapse) in analog in-memory computing (IMC) systems. Energy-efficient analog IMC computing is particularly desirable for power-constrained, high-radiation environments such as satellites. However, little is known about the suitability of ECRAM for use in a total ionizing dose (TID) environment. Here, this work investigates the effect of Co-60 gamma radiation on the channel conductance and noise—two properties critical for analog IMC systems—of a TaO x -based ECRAM up to 17.3 Mrad(SiO 2 ) for both low- and high-channel-conductance state devices. A transient increase in conductance is observed in response to radiation which consists of two elements: an immediate increase in conductivity due to photocurrent and a secondary increase in conductivity, which has a slower rise and saturation and can persist for hours after exposure. This secondary, persistent photoconductivity is attributed to charging caused by hole trapping. These transient effects would not likely occur in a space environment due to the low dose rate compared with this experiment. No permanent change is found in the low conductance state (LCS) following exposure and the minor shift in the high conductance change would be less significant than the regular retention decay in this state. A permanent increase in the random telegraph noise is observed, possibly due to increased traps created in the channel. This work demonstrates that TaO x -based ECRAM is suitable for use in spaceborne analog IMC systems that are subject to significant TID.

ECRAM↗
DOE OSTI2020

Global functional connectivity density alterations in patients with bipolar disorder with auditory verbal hallucinations and modest short‐term effects of transcranial direct current stimulation augmentation treatment—Baseline and follow‐up study

Abstract Objectives To investigate the neuroimaging characteristics of auditory verbal hallucinations (AVHs) in patients with bipolar disorder (BP) experiencing depressive episodes with and without AVHs, and alterations in those characteristics after transcranial direct current stimulation (tDCS). Methods For a baseline pilot study, we recruited 80 patients with BP and depressive status (40 with and 40 without AVHs), and 40 healthy controls (HCs). Their global functional connectivity density (gFCD) was screened by functional magnetic resonance imaging (fMRI). Voxel‐wise one‐way analysis of covariance (ANCOVA) was conducted to detect intergroup differences in gFCD. In a follow‐up study, the effects of 5 weeks of tDCS augmentation treatment on clinical symptoms and gFCD were assessed in the 40 BP patients with AVHs. Results Compared to HCs, BP patients with and without AVHs exhibited increased gFCD in the central parietal lobe, insular lobe, and middle cingulate cortex, with decreased gFCD in the posterior parietal cortex, lateral prefrontal cortex, and occipital lobe (all bilateral). Only patients with AVHs showed increased gFCD in the Broca and Wernicke regions, and decreased gFCD in the hippocampus (all bilateral). After 5 weeks of tDCS, AVHs were slightly alleviated and gFCD abnormalities in the hippocampus were mildly attenuated. Conclusions Patients with BP and AVHs showed disturbances in the brain's communication capacity mainly in the left frontoparietal network, control network, and memory circuitry. Five weeks of tDCS alleviated AVHs slightly, without improving depressive symptoms, and attenuated hippocampal gFCD alterations in these patients.

Zhuo, Chuanjun↗