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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

A programmable shared-memory system for an array of processing-in-memory devices

Processing in memory (PIM), the concept of integrating processing directly with memory has been attracting a lot of attention, since PIM can assist in overcoming the throughput limitation caused by data movement between CPU and memory. The challenge, however, is that it requires the programmers to have a deep understanding of the PIM architecture to maximize the benefits such as data locality and parallel thread execution on multiple PIM devices. In this study, we present AnalyzeThat, a programmable shared-memory system for parallel data processing with PIM devices. Thematic to AnalyzeThat is a rich PIM-aware data structure (PADS), which is an encapsulation that integrally ties together the data, the analysis tasks and the runtime needed to interface with the PIM device array. The PADS abstraction provides (i) a sophisticated key-value data container that allows programmers to easily store data on multiple PIMs, (ii) a suite of parallel operations with which users can easily implement data analysis applications, and (iii) a runtime, hidden to programmers, which provides the mechanisms needed to overlay both the data and the tasks on the PIM device array in an intelligent fashion, based on PIM-specific information collected from the hardware. We have developed a PIM emulation framework called AnalyzeThat. In conclusion, our experimental evaluation with representative data analytics applications suggests that the proposed system can significantly reduce the PIM programming effort without losing its technology benefits.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2019

Measuring color memory in a color glass condensate at electron–ion colliders

The color memory effect is the non-abelian gauge theory analog of the gravitational memory effect, in which the passage of color radiation induces a net relative SU(3) color rotation of a pair of nearby quarks. It is proposed that this effect can be measured in the Regge limit of deeply inelastic scattering at electron–ion colliders.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2013

Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO{sub 2} layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (V{sub t}) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V V{sub t} shift, the memory with CrO{sub 2} layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO{sub 2} layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

36 MATERIALS SCIENCE↗
DOE OSTI2015

A Survey of Software Techniques for Using Non-Volatile Memories for Storage and Main Memory Systems

Non-volatile memory (NVM) devices, such as Flash, phase change RAM, spin transfer torque RAM, and resistive RAM, offer several advantages and challenges when compared to conventional memory technologies, such as DRAM and magnetic hard disk drives (HDDs). Here, we present a survey of software techniques that have been proposed to exploit the advantages and mitigate the disadvantages of NVMs when used for designing memory systems, and, in particular, secondary storage (e.g., solid state drive) and main memory. Furthermore, we classify these software techniques along several dimensions to highlight their similarities and differences. Given that NVMs are growing in popularity, we believe that this survey will motivate further research in the field of software technology for NVMs.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2017

Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

Operation speed is a key challenge in phase-change random-access memory (PCRAM) technology, especially for achieving subnanosecond high-speed cache memory. Commercialized PCRAM products are limited by the tens of nanoseconds writing speed, originating from the stochastic crystal nucleation during the crystallization of amorphous germanium antimony telluride (Ge 2 Sb 2 Te 5 ). Here, we demonstrate an alloying strategy to speed up the crystallization kinetics. The scandium antimony telluride (Sc 0.2 Sb 2 Te 3 ) compound that we designed allows a writing speed of only 700 picoseconds without preprogramming in a large conventional PCRAM device. This ultrafast crystallization stems from the reduced stochasticity of nucleation through geometrically matched and robust scandium telluride (ScTe) chemical bonds that stabilize crystal precursors in the amorphous state. Controlling nucleation through alloy design paves the way for the development of cache-type PCRAM technology to boost the working efficiency of computing systems.

Science & Technology - Other Topics↗
DOE OSTI2014

A study of the viability of exploiting memory content similarity to improve resilience to memory errors

Building the next-generation of extreme-scale distributed systems will require overcoming several challenges related to system resilience. As the number of processors in these systems grow, the failure rate increases proportionally. One of the most common sources of failure in large-scale systems is memory. In this paper, we propose a novel runtime for transparently exploiting memory content similarity to improve system resilience by reducing the rate at which memory errors lead to node failure. We evaluate the viability of this approach by examining memory snapshots collected from eight high-performance computing (HPC) applications and two important HPC operating systems. Based on the characteristics of the similarity uncovered, we conclude that our proposed approach shows promise for addressing system resilience in large-scale systems.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

GASNet-EX Memory Kinds: Support for Device Memory in PGAS Programming Models

There is an emerging need for adaptive, lightweight communication in irregular HPC applications at exascale, where GPU accelerators provide the majority of available compute cycles. To address this need, Lawrence Berkeley National Lab is developing a programming system to support distributed-memory HPC application development using the Partitioned Global Address Space (PGAS) model. This work includes two major components: UPC++ and GASNet-EX. UPC++ is a C++ template library providing Remote Memory Access (RMA) and Remote Procedure Call (RPC) communication interfaces. GASNet-EX is a portable, high-performance communication middleware library, used by the implementations of UPC++ and many other PGAS programming models. We describe recent advances in GASNet-EX to efficiently implement zero-copy Remote Memory Access (RMA) communication to and from memory on accelerator devices such as GPUs. We demonstrate performance improvements via benchmark results from UPC++ (on Summit) and the Legion programming system (on DGX-1), both using GASNet-EX for communication.

Hargrove, Paul H↗
DOE OSTI2018

Method and apparatus for selective and power-aware memory error protection and memory management

A method for providing selective memory error protection responsive to a predictable failure notification associated with at least one portion of a memory in a computing system includes: obtaining an active error correcting code (ECC) configuration corresponding to the portion of the memory; determining whether the active ECC configuration is sufficient to correct at least one error in the portion of the memory affected by the predictable failure notification; when the active ECC configuration is insufficient to correct the error, determining whether data corruption can be tolerated by an application running on the computing system; when data corruption cannot be tolerated by the application, determining whether a stronger ECC level is available and, if a stronger ECC level is available, increasing a strength of the active ECC configuration; and when data corruption can be tolerated, performing page reassignment and aggregation of non-critical data.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2014

The roles of the dielectric constant and the relative level of conduction band of high-k composite with Si in improving the memory performance of charge-trapping memory devices

The memory structures Pt/Al{sub 2}O{sub 3}/(TiO{sub 2}){sub x}(Al{sub 2}O{sub 3}){sub 1−x}/Al{sub 2}O{sub 3}/p-Si(nominal composition x = 0.05, 0.50 and 0.70) were fabricated by using rf-magnetron sputtering and atomic layer deposition techniques, in which the dielectric constant and the bottom of the conduction band of the high-k composite (TiO{sub 2}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} were adjusted by controlling the partial composition of Al{sub 2}O{sub 3}. With the largest dielectric constant and the lowest deviation from the bottom of the conduction band of Si, (TiO{sub 2}){sub 0.7}(Al{sub 2}O{sub 3}){sub 0.3} memory devices show the largest memory window of 7.54 V, the fast programming/erasing speed and excellent endurance and retention characteristics, which were ascribed to the special structural design, proper combination of dielectric constant and band alignment in the high-k composite (TiO{sub 2}){sub 0.7}(Al{sub 2}O{sub 3}){sub 0.3}.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Multilevel characteristics and memory mechanisms for nonvolatile memory devices based on CuInS{sub 2} quantum dot-polymethylmethacrylate nanocomposites

Nonvolatile memory devices based on CuInS{sub 2} (CIS) quantum dots (QDs) embedded in a polymethylmethacrylate (PMMA) layer were fabricated using spin-coating method. The memory window widths of the capacitance-voltage (C-V) curves for the Al/CIS QDs embedded in PMMA layer/p-Si devices were 0.3, 0.6, and 1.0 V for sweep voltages of ±3, ±5, and ±7 V, respectively. Capacitance-cycle data demonstrated that the charge-trapping capability of the devices with an ON/OFF ratio value of 2.81 × 10{sup −10} was maintained for 8 × 10{sup 3} cycles without significant degradation and that the extrapolation of the ON/OFF ratio value to 1 × 10{sup 6} cycles converged to 2.40 × 10{sup −10}, indicative of the good stability of the devices. The memory mechanisms for the devices are described on the basis of the C-V curves and the energy-band diagrams.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Ion fluxes and memory effects in an Ar–O 2 modulated radiofrequency-driven atmospheric pressure plasma jet

In this work we used molecular beam mass spectrometry to characterize ion fluxes produced by a modulated radiofrequency (RF)-driven atmospheric pressure plasma jet operating in a homogeneous gas environment (Ar + 1% O 2 ). The influence of the RF modulation frequency (100 Hz to 20 kHz) on the ion fluxes was investigated by time-resolved measurements, and the lifetimes of the dominant ions, O 2 + , NO + , O − , O 2 − and O 3 − , were found to be 28 ± 2, 117 ± 8, 7.3 ± 0.4, 17 ± 1 and 23 ± 2 μs, respectively. The absolute ion densities in the near afterglow region were found to be of the order of 1011 cm−3. Significant differences in the dynamics of the positive and negative ions were found; these are explained by the presence of electrons at similar densities in the afterglow produced by electron detachment reactions from negative ions due to the large concentrations of atomic oxygen and singlet delta oxygen. Transitions in ion flux dynamics for different modulation frequencies and at the startup of the plasma were analyzed together with intensified charge coupled device images recording the plasma propagation in order to assess the dynamics of plasma plume propagation and how it is impacted by ‘memory effects’. Quantitative measurements of the ion densities enabling these memory effects are reported. The results in this paper highlight the tremendous impact of memory effects on plasma propagation and the corresponding pre-ionization.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2018

Determining the memory kernel from a fixed point measurement data for a parabolic equation with memory effect

We consider an inverse problem for a parabolic equation with memory effect. This inverse problem aims to identify the memory kernel function from a fixed point measurement data. Based on the fixed point arguments, we derive the global in time existence and uniqueness of our inverse problem. Moreover, we present a numerical algorithm to reconstruct the memory kernel function. Numerical simulations show the effectiveness of the proposed method.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2019

Low-Voltage, CMOS-Free Synaptic Memory Based on Li X TiO 2 Redox Transistors

Neuromorphic computers based on analogue neural networks aim to substantially lower computing power by reducing the need to shuttle data between memory and logic units. Artificial synapses containing nonvolatile analogue conductance states enable direct computation using memory elements; however, most nonvolatile analogue memories require high write voltages and large current densities and are accompanied by nonlinear and unpredictable weight updates. Here, we develop an inorganic redox transistor based on electrochemical lithium-ion insertion into Li X TiO 2 that displays linear weight updates at both low current densities and low write voltages. The write voltage, as low as 200 mV at room temperature, is achieved by minimizing the open-circuit voltage and using a low-voltage diffusive memristor selector. We further show that the Li X TiO 2 redox transistor can achieve an extremely sharp transistor subthreshold slope of just 40 mV/decade when operating in an electrochemically driven phase transformation regime.

42 ENGINEERING↗
DOE OSTI2019

Nanoscale self-healing mechanisms in shape memory ceramics

Abstract Shape memory ceramics, such as yttria-stabilized tetragonal zirconia (YSTZ), offer unique properties including ultra-high operating temperatures and high resistance to oxidation. However, they are susceptible to formation of defects during manufacturing and/or by mechanical deformation. To completely take advantage of their shape memory properties, it is necessary to fully understand the nano-structural evolution of defects under external stimuli. In this study, defect evolution behaviors in YSTZ nanopillars are investigated by atomistic simulations. Two characteristic orientations of $$\left[ {01\bar 1} \right]$$ 01 1 ¯ and [001] are selected to represent the dominant deformation mechanisms of phase transformation and dislocation migration, respectively. Volume expansion associated with the tetragonal to monoclinic phase transformation is observed to promote healing of crack and void. Atom stress analyses reveal stress concentrations along the newly formed monoclinic phase bands. A critical crack width is identified, less than which the crack can be fully closed in compression. For [001]-oriented YSTZ nanopillars, dislocation migration leads to formations of an amorphous phase, which also assist the crack and void closure process. The revealed crack/void healing mechanisms may provide a path for mitigating internal defects that influences the mechanical properties and deformation mechanisms of shape memory ceramics.

Zhang, Ning (ORCID:0000000240661837)↗
DOE OSTI2022

Memory row recording for mitigating crosstalk in dynamic random access memory

A method includes adding a set of one or more victim rows to a first probabilistic filter and to a second probabilistic filter, in response to a memory access request, identifying a candidate victim row adjacent to a memory address specified by a memory access request, identifying the candidate victim row as a victim row in the set of victim rows based on performing a lookup of the candidate victim row in a selected filter, where the selected filter includes one of the first probabilistic filter and the second probabilistic filter, in response to identifying the candidate row as the victim row, enabling a row hammering countermeasure, clearing the first probabilistic filter in each of a first set of time periods, and clearing the second probabilistic filter in each of a second set of time periods interleaved with the first set of time periods.

SeyedzadehDelcheh, SeyedMohammad↗
DOE OSTI2015

Stress transfer during different deformation stages in a nano-precipitate-strengthened Ni-Ti shape memory alloy

Understanding the role of fine coherent precipitates in the micromechanical behavior of precipitate-strengthened shape memory alloys (SMAs), which still remains a mystery heretofore, is of crucial importance to the design of advanced SMAs with optimal functional and mechanical properties. Here, we investigate the lattice strain evolution of, and the stress partition between the nanoscale Ni{sub 4}Ti{sub 3} precipitates and the matrix in a precipitate-strengthened Ni-Ti SMA during different deformation stages by in-situ synchrotron high-energy X-ray diffraction technique. We found that, during R-phase reorientation and stress-induced martensitic transformation, which both involve the shear deformation process, the lattice strain of the nanoscale precipitates drastically increases by a magnitude of 0.5%, which corresponds to an abrupt increase of ∼520 MPa in internal stress. This indicates that stress repartition occurs and most of the stress is transferred to the precipitates during the shear deformation of the matrix. It is further revealed that the nanoscale precipitates which only have a low volume fraction bear a considerable amount of applied stress during all deformation stages investigated, implying that the nanoscale precipitates play an important role in the deformation behavior of the precipitate-strengthened Ni-Ti SMAs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

A Two-Way Shape Memory Study on Ni-Rich NiTi Shape Memory Alloy by Combination of the All-Round Treatment and the R-Phase Transformation

Ni{sub 4}Ti{sub 3} precipitates are formed in Ni-rich NiTi shape memory alloys (SMAs) after a certain heat treatment. Such a treatment then results in the changed phase transformation behavior of the alloy switching from the one-step reversible phase change B2 ↔ B19′ to the two-step, B2 ↔ R ↔ B19′, phase change. The present study reports a two-way shape memory (TWSM) due to an all-round treatment followed by an R-phase constraint aging at room temperature. The enhanced TWSM behavior was observed upon temperature cycling between 273 K (R-phase) and 77 K (B19′ phase). The effect of various constraint strains in R-phase aging by employing different diameters of the constraint ring was studied. However, the TWSM effect due to constraining the R-phase will be eliminated after a temperature rise of specimen to the fully parent phase (373 K).

36 MATERIALS SCIENCE↗