Unidirectional Magnetoresistance in Antiferromagnet/Heavy-Metal Bilayers
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Ultrafast optical pumping of systems with spatially nonuniform magnetic textures is known to cause far-from-equilibrium spin transport effects, such as the broadening of domain-walls. Here, we study the dynamics of labyrinth domain networks in ferromagnetic CoFe/Ni multilayers subject to a femtosecond optical pump and find an ultrafast domain dilation by 6% within 1.6 ps. This surprising result is based on the unambiguous determination of a harmonically-related shift of ultrafast magnetic X-ray diffraction for the first- and third-order rings. Domain dilation is plausible from conservation of momentum arguments, whereby inelastic scattering from a hot, quasi-ballistic, radial current transfers momentum to the magnetic domains. Our results suggest a potentially rich variety of unexpected physical phenomena associated with far-from-equilibrium inelastic electron-magnon scattering processes in the presence of spin textures.
Magnetic skyrmions are nanoscale spin textures touted as next-generation computing elements. When subjected to lateral currents, skyrmions move at considerable speeds. Their topological charge results in an additional transverse deflection known as the skyrmion Hall effect (SkHE). While promising, their dynamic phenomenology with current, skyrmion size, geometric effects and disorder remain to be established. Here we report on the ensemble dynamics of individual skyrmions forming dense arrays in Pt/Co/MgO wires by examining over 20,000 instances of motion across currents and fields. The skyrmion speed reaches 24 m/s in the plastic flow regime and is surprisingly robust to positional and size variations. Meanwhile, the SkHE saturates at ~22 ° , is substantially reshaped by the wire edge, and crucially increases weakly with skyrmion size. Particle model simulations suggest that the SkHE size dependence - contrary to analytical predictions - arises from the interplay of intrinsic and pinning-driven effects. These results establish a robust framework to harness SkHE and achieve high-throughput skyrmion motion in wire devices.
Damping and spin transport in spintronic multilayered systems continues to be a topic of active research. The enhancement of damping in ferromagnet (FM)/spacer layer (SL)/heavy-metal (HM) thin-film systems was studied for Co 25 Fe 75 /SL/Pt with a nonmagnetic (NM) SL of either Au or Cu with variable thickness, in order to understand the correlation with proximity-induced magnetism (PIM) in the HM. Structural, PIM and magnetic damping measurements were undertaken on the same samples. Specifically, secondary ion mass spectroscopy, element specific x-ray magnetic reflectivity and x-ray magnetic circular dichroism at the Pt and Au L 3 edges, and ferromagnetic resonance methods were used. With increasing thickness of a Cu or Au SL directly between the FM and the Pt layer, the Pt PIM and the damping both fall rapidly, with a relationship between damping and PIM that depends on the SL material. The PIM observed in the Au layer showed a complex dependence on the layer thickness, suggesting some hybridization with the Pt. The role of the number and location of interfaces on the damping was demonstrated with the addition of a SL within the Pt layer, which showed that the specific details of the NM/HM interface also affects the damping. The insertion of a Cu SL within the Pt showed a measurable increase in the overall enhancement of the damping while the insertion of a Au SL into Pt had almost no effect on the damping. Finally, together these results demonstrate the role of both PIM and of additional interfaces in the enhancement of damping in FM/HM systems, which is not fully accounted for by existing theory
Two-dimensional (2D) van der Waals (vdW) magnets have sparked widespread attention due to their potential in spintronic applications as well as in fundamental physics. Ferromagnetic vdW compound Fe 3 GeTe 2 (FGT) and its Ga variants have garnered significant interest due to their itinerant magnetism, correlated states, and high magnetic transition temperature. Experimental studies have demonstrated the tunability of FGT’s Curie temperature, T C , through adjustments in quintuple layer numbers (QL) and carrier concentrations, n. However, the underlying mechanism remains elusive. In this study, we employ molecular beam epitaxy (MBE) to synthesize 2D FGT films down to 1 QL with precise layer control, facilitating an exploration of the band structure and the evolution of itinerant carrier density. Angle-resolved photoemission spectroscopy (ARPES) reveals significant band structure changes at the ultra-thin limit, while first-principles calculations elucidate the band evolution from 1 QL to bulk, largely governed by interlayer coupling. Additionally, we find that n is intrinsically linked to the number of QL and temperature, with a critical value triggering the magnetic phase transition. Our findings underscore the pivotal role of band structure and itinerant electrons in governing magnetic phase transitions in such 2D vdW magnetic materials.
The SIS structure which consists of alternative thin layers of superconductors and insulators on a bulk niobium has been proposed to shield niobium cavity surface from high magnetic field and hence increase the accelerating gradient. The study of the behavior of multilayer super-conductors in an external magnetic field is essential to optimize their SRF performance. In this work we report the development of a simple and efficient technique to measure penetration of magnetic field into bulk, thin film and multilayer superconductors. Experimental setup contains a small superconducting solenoid which can produce a parallel surface magnetic field up to 0.5 T and Hall probes to detect penetrated magnetic field across the superconducting sample. This system was calibrated and used to study the effect of niobium sample thickness on the field of full magnetic flux penetration. We determined the optimum thickness of the niobium substrate to fabricate the multilayer structure for the measurements in our setup. This technique was used to measure penetration fields of Nb₃Sn thin films and Nb₃Sn/Al₂O₃ multi-layers deposited on Al₂O₃ wafers.
We demonstrate the possibility to tune the saturation magnetization, coercivity, and uniaxial in-plane anisotropy constant in amorphous bilayers and multilayers of Co 85 (Al 70 Zr 30 ) 15 and Sm 11 Co 82 Ti 7 through the interface density. From magnetometry and x-ray circular dichroism (XMCD) measurements, we conclude that the easy-axis coercivity μ 0 H c increases four times when the number of bilayer repetitions, N, increases from 1 to 10 within a constant total sample thickness of 20 nm. At the same time, the anisotropy constant K u also increases by a factor four, whereas the saturation magnetization M s decreases slightly. The Co spin and orbital moments, m s and m l , are found to be approximately constant within the sample series. The average total Co moment is only 0.8-0.9 μ B /atom, but the m l /m s ratio is strongly enhanced compared to pure Co. Magnetization curves extracted from XMCD measurements show that the Co and Sm moments are ferromagnetically coupled for all samples.
Electrical control of magnetism has been a major technological pursuit of the spintronics community, owing to its far-reaching implications for data storage and transmission. Here, in this study, we propose and analyze a new mechanism for electrical switching of isospin, using chiral-stacked graphene multilayers, such as Bernal bilayer graphene or rhombohedral trilayer graphene, encapsulated by transition metal dichalcogenide (TMD) substrates. Leveraging the proximity-induced spin-orbit coupling from the TMD, we demonstrate electrical switching of correlation-induced spin and/or valley polarization, by reversing a perpendicular displacement field or the chemical potential. We substantiate our proposal with both analytical arguments and self-consistent Hartree-Fock numerics. Finally, we illustrate how the relative alignment of the TMDs, together with the top and bottom gate voltages, can be used to selectively switch distinct isospin flavors, putting forward correlated Van der Waals heterostructures as a promising platform for spintronics and valleytronics.
Spintronic nano-oscillators and diodes with reduced nonlinearity benefit from low phase noise and improved device properties. Moreover, they could offer key advantages for realizing neuromorphic applications, such as spike-based neurons and frequency multiplexing in neural networks. Here, in this work, we experimentally demonstrate the reduction in nonlinearity of a spin Hall nano-oscillator (SHNO) by compensation of its effective magnetic anisotropy. The study involves optimization of Co/Ni multilayer growth to achieve the compensation, followed by spin-diode measurements on patterned microstrips to quantify their anisotropy. The relationship between the second- (H k 2 = 0.47 mT) and first-order ($H^{eff}_{k_1}$ = -0.8 mT) anisotropy fields reveals the existence of an easy cone, thereby validating the presence of compensation. Furthermore, we demonstrate a compensated spin diode that has a fixed frequency when the input power is varied. We then study the current-induced auto-oscillation properties of SHNOs on compensated films by patterning nanoconstrictions of 200 and 100 nm wide. The invariance of the resonance frequency and linewidth of the compensated SHNO with applied dc current indicates the absence of nonlinearity. This independence is maintained irrespective of the applied external fields and their orientations. The compensated SHNO obtained has a linewidth of 1.1 MHz and a peak output power of up to 1 pW/MHz.
Nickel-platinum-based synthetic ferrimagnets (SFi's) are highly tunable and rare-earth-free materials that allow ultrafast all optical control of magnetism to be explored. This study considers a SFi composed of a ferromagnetic [Ni/Pt] multilayer and a ferromagnetic Co layer, separated by an Ir layer that mediates an antiferromagnetic coupling. Helicity-independent all optical switching (HI-AOS) between two antiparallel magnetization states is observed. AOS may be realized at increased temperature through reduction of the thickness of the Pt layers. Switching is unidirectional and has a strong dependence on the applied magnetic field history, which suggests the possible presence of a nanoscale magnetic texture that may be important in controlling AOS in SFi systems. Published by the American Physical Society 2024
The electron ion collider (EIC) will collide high energy and highly polarized hadron and electron beams with luminosities up to 10 34 cm -2 s -1 . The magnet designs at the interaction region (IR) are challenging due to the close proximity of the hadron and electron beams. A canted cosine theta (CCT) quadrupole magnet was designed due to the space restrictions at the IR. The CCT magnet has a tapered aperture, which allows higher gradients at the interaction point (IP) side of the magnet. The tapered geometry makes the magnet not symmetrical along the axial direction. In conclusion, to validate the design in terms of the mechanical strength and the allowed deformations, a detailed structural mechanical analysis for the tapered CCT quadrupole magnet has been carried out using the finite element method (FEM) considering both the shrinking due to cool down and the electromagnetic force on the conductors.
In the presence of axion dark matter, fermion spins experience an “axion wind” torque and an “axioelectric” force. We investigate new experimental probes of these effects and find that magnetized analogs of multilayer dielectric haloscopes can explore orders of magnitude of new parameter space for the axion-electron coupling. We also revisit the calculation of axion absorption into in-medium excitations, showing that axioelectric absorption is screened in spin-polarized targets, and axion wind absorption can be characterized in terms of a magnetic energy loss function. Finally, our detailed theoretical treatment allows us to critically examine recent claims in the literature. We find that axioelectric corrections to electronic energy levels are smaller than previously estimated and that the purported electron electric dipole moment due to a constant axion field is entirely spurious.
We report on imaging magnetic flux distributions in a multilayered superconductor integrated circuit which emerge during magnetization and after field cooling of the circuit in the DC magnetic field. The obtained complicated field maps expose the flux propagation across the patterned superconducting ground planes sandwiching layers with Josephson junction-based logic cells, fine wire grid around the functional units, and multiple superconducting fill structures located in different inner layers. The observed intricate flux distributions are explained by specific patterns of Meissner screening currents and superconducting critical currents in different mutually interacting parts of the integrated circuit. Our results provide important insights into possible ways of improving the protection of superconductor integrated circuits from magnetic fields and their resilience against flux trapping.
Abstract Chiral magnetic domains are topological spin textures in which the Dzyaloshinskii–Moriya interaction assigns a given chirality to the domain walls. Notably, despite rapid progress in chiral magnetic research, one fundamental issue that remains unclear is how the chirality of chiral magnetic domains change as a magnetic field deforms the spin texture. Using spin‐polarized low energy electron microscopy, the evolution of Fe/Ni chiral magnetic stripe domains are investigated in single‐crystalline Fe/Ni/Cu/Co/Cu(001) multilayers in which the interlayer magnetic coupling between the Co and Fe/Ni films serves as an in‐plane magnetic field. Contrary to theoretical works, it is found that the chirality of the Néel walls results in a parallel alignment of the magnetic stripes with the in‐plane magnetic field direction. The transformation of chiral Néel walls into achiral Bloch walls can be precisely controlled by tuning the Cu spacer layer thickness. In addition, the domain wall exhibits a spontaneous asymmetry within the in‐plane magnetic field, leading to an unbalanced chirality between the left‐handed and right‐handed Bloch walls. These new results foster a better understanding of the chiral domain properties within a magnetic field.
Abstract Manipulating the topological properties of spin textures in magnetic materials is of great interest due to the rich physics and promising technological applications of these materials in advanced electronic devices. A spin texture with desired topological properties can be created by magnetic monopole injection, resulting in topological transitions involving changes in the topological charge. Therefore, controlling magnetic monopole injection has paramount importance for obtaining the desired spin textures but has not yet been reported. Here, we report the use of reliably manipulated magnetic monopole injection in the topological transition from stripe domains to skyrmions in an Fe/Gd multilayer. An easily tunable in-plane magnetic field applied to an Fe/Gd multilayer plays a key role in the magnetic monopole injection by modulating the local exchange energy. Our findings facilitate the efficient management of topological transitions by providing an important method for controlling magnetic monopole injection.
Abstract Ferromagnetic van der Waals (vdW) materials are of large current interest for the fundamental study of low‐dimensional magnetism and for potential applications in multilayer heterostructures. Cr 2 Ge 2 Te 6 (CGT) is particularly exciting because it is a ferromagnetic semiconductor with tunable electronic and magnetic properties. Controlling the magnetic domain structure of CGT is a requirement for understanding its novel interface physics and for tuning behavior for potential devices. Herein, cryo‐Lorentz transmission electron microscopy is performed in the temperature range of 12–50K to directly image the magnetic domain structures in CGT. A rich phase diagram of domain structures including stripe domains, magnetic bubble lattices of mixed‐chirality, and topologically‐protected lattices of homochiral magnetic bubbles is observed. The types and chiralities of the bubbles can be controlled by topographical changes in the CGT flakes. Additionally, it is observed that in‐plane strain and magnetoelastic coupling can align and organize both bubble lattices and stripe domains. This study provides insights into creating and controlling complex magnetic domain structures for integration into multilayer heterostructures and for future studies of 2D magnetism.
Under suitable conditions, some twisted graphene multilayers and transition-metal dichalcogenides become Chern insulators, exhibiting the anomalous quantum Hall effect and orbital magnetization due to spontaneous valley polarization. We study the interaction of a Chern insulator with circularly polarized light. Here, the interaction energy contains an antisymmetric term that couples to the helicity of incident light. For a two-band Chern insulator, this term is expressed as an integral involving the Berry curvature of the system. Taking advantage of this interaction, we propose an experimental protocol for switching topological memory based on orbital magnetization by circularly polarized light. Moreover, two laser beams of opposite circular polarization can nucleate domains of opposite magnetization and thus produce an optically configurable domain wall carrying topologically protected chiral edge modes.
Abstract Skyrmions and antiskyrmions are nanoscale swirling textures of magnetic moments formed by chiral interactions between atomic spins in magnetic noncentrosymmetric materials and multilayer films with broken inversion symmetry. These quasiparticles are of interest for use as information carriers in next-generation, low-energy spintronic applications. To develop skyrmion-based memory and logic, we must understand skyrmion-defect interactions with two main goals—determining how skyrmions navigate intrinsic material defects and determining how to engineer disorder for optimal device operation. Here, we introduce a tunable means of creating a skyrmion-antiskyrmion system by engineering the disorder landscape in FeGe using ion irradiation. Specifically, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au 4+ ions at varying fluences, inducing amorphous regions within the crystalline matrix. Using low-temperature electrical transport and magnetization measurements, we observe a strong topological Hall effect with a double-peak feature that serves as a signature of skyrmions and antiskyrmions. These results are a step towards the development of information storage devices that use skyrmions and antiskyrmions as storage bits, and our system may serve as a testbed for theoretically predicted phenomena in skyrmion-antiskyrmion crystals.