SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Spectrographic method determines individual stainless steel components in molten bismuth-42 w/o tin eutectic to determine the solubility of Type 304 stainless steels. It utilizes the high sensitivity and precision of the spark-ignited, low-voltage ac-arc excitation of samples rendered homogeneous by dissolution.
Accurate evaluations of diffusion lengths for heavily to moderately doped III-V semiconductors and/or radiation damaged solar cells have been made possible by using experimental and numerical techniques. The techniques employed were electron beam induced current and low voltage electron microscopy.
NASA's Langley Research Center and Johnson Space Center are developing a solid freeform fabrication system utilizing an electron beam energy source and wire feedstock. This system will serve as a testbed for exploring the influence of gravitational acceleration on the deposition process and will be a simplified prototype for future systems that may be deployed during long-duration space missions for assembly, fabrication, and production of structural and mechanical replacement components. Critical attributes for this system are compactness, minimal mass, efficiency in use of feedstock material, energy use efficiency, and safety. The use of a low-voltage (less than 15kV) electron beam energy source will reduce radiation so that massive shielding is not required to protect adjacent personnel. Feedstock efficiency will be optimized by use of wire, and energy use efficiency will be achieved by use of the electron beam energy source. This system will be evaluated in a microgravity environment using the NASA KC-135A aircraft.
Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.
Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.
Single cell batteries with low input voltage conversion regulation considered as long life energy storage system, noting circuit integration
This document has been developed in the course of NASA Electronic Parts and Packaging (NEPP) program and is not an official endorsement of the insertion of commercial capacitors in space programs or an established set of requirements for their testing. The purpose of this document is to suggest possible ways for selection, screening, and qualification of commercial capacitors for NASA projects and open discussions in the parts engineering community related to the use of COTS ceramic capacitors. This guideline is applicable to commercial surface mount chip, simple parallel plate design, multi-layer ceramic capacitors (MLCCs) rated to voltages of 100V and less. Parts with different design, e.g. low inductance ceramic capacitors (LICA), land grid array (LGA) etc., might need additional testing and tailoring of the requirements described in this document. Although the focus of this document is on commercial MLCCs, many procedures discussed below would be beneficial for military-grade capacitors
Cracking remains the major reason of failures in multilayer ceramic capacitors (MLCCs) used in in space electronics. Due to a tight quality control of space-grade components, the probability that as manufactured capacitors have cracks is relatively low, and cracking is often occurs during assembly, handling and the following testing of the systems. Majority of capacitors with cracks are revealed during the integration and testing period, but although extremely rarely, defective parts remain undetected and result in failures during the mission. This situation is aggravated by manual soldering and rework that are often used during low volume production of circuit boards for space. Although failures of MLCCs are often attributed to the post-manufacturing stresses, in many cases they are due to a combination of certain deviations in the manufacturing processes that result in hidden defects in the parts and excessive stresses during assembly and use. This report gives an overview of design, manufacturing and testing processes of MLCCs focusing on elements related to cracking problems. The existing and new screening and qualification procedures and techniques are briefly described and assessed by their effectiveness in revealing cracks. The capability of different test methods to simulate stresses resulting in cracking, mechanisms of failures in capacitors with cracks, and possible methods of selecting the most robust to manual soldering stresses capacitors are discussed.
Materials for electroluminescent display panel based on carrier injection
Development of failure sensing switching circuitry for electrical power system reliability during extended space missions
Development of monocrystals and formation of electroluminescent p-n junctions
Voltage breakdown threshold of electronic equipment in partial pressure environment of nitrogen and water vapor
Production and optical properties of zinc selenide aluminum arsenide heterojunction and platinum zinc selenide Schottky junction
The construction of an ion thruster module (including thruster, power conditioning, and control system) capable of operating for 10,000 hours over a five to one range at an effective specific impulse of approximately 2800 seconds is discussed. The several interrelated tasks involved in the construction of the engine are described. Performance tests of the engine and the effects of various modifications are reported. It was demonstrated that thruster performance and stability were not materially affected by reasonable changes from the nominal operating point.
Explore the source record for details and available documents.
The basic goal was to advance the development status of the 30-cm electron bombardment ion thruster from a laboratory model to a flight-type engineering model (EM) thruster. This advancement included the more conventional aspects of mechanical design and testing for launch loads, weight reduction, fabrication process development, reliability and quality assurance, and interface definition, as well as a relatively significant improvement in thruster total efficiency. The achievement of this goal was demonstrated by the successful completion of a series of performance and structural integrity (vibration) tests. In the course of the program, essentially every part and feature of the original 30-cm Thruster was critically evaluated. These evaluations, led to new or improved designs for the ion optical system, discharge chamber, cathode isolator vaporizer assembly, main isolator vaporizer assembly, neutralizer assembly, packaging for thermal control, electrical terminations and structure.
Monitor/alarm with audio and visual warning output can be used to warn when prescribed limits of temperature, liquid level, pressure, or similar properties are exceeded. Device is more compact, lighter, and less expensive to manufacture than typical alarm circuits.
Ceramic capacitors failed insulation resistance testing at less than one-tenth their rated voltage. Many failures recovered as the voltage was increased. Comprehensive failure analysis techniques, some of which are unprecedented, were used to examine these failures. It was determined that there was more than one failure mechanism, and the results indicate a need for special additional screening.