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A picosecond switch made of polydiacetylene thin film coated on the interior of a 50-micron diameter hollow fiber and a nanosecond switch made of a micron thick film of phthalocyanine on glass were developed.
We demonstrated a picosecond Exclusive OR and a nanosecond AND gates. An inverter gate has been designed. Their combination forms the rest of other gates to build an all- optical computing system.
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According to the invention, a digital circuit design embodied in at least one of a structural netlist, a behavioral netlist, a hardware description language netlist, a full-custom ASIC, a semi-custom ASIC, an IP core, an integrated circuit, a hybrid of chips, one or more masks, a FPGA, and a circuit card assembly is disclosed. The digital circuit design includes first and second sub-circuits. The first sub-circuits comprise a first percentage of the digital circuit design and the second sub-circuits comprise a second percentage of the digital circuit design. Each of the second sub-circuits is substantially comprised of one or more kernel circuits. The kernel circuits are comprised of selection circuits. The second percentage is at least 5%. In various embodiments, the second percentage could be at least 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90%, or 95%.
A complementary metal oxide/semiconductor (CMOS) electronic circuit has been designed to function as a NAND gate at a temperature between 0 and 80 deg C and as a NOR gate at temperatures from 120 to 200 C. In the intermediate temperature range of 80 to 120 C, this circuit is expected to perform a function intermediate between NAND and NOR with degraded noise margin. The process of designing the circuit and the planned fabrication and testing of the circuit are parts of demonstration of polymorphic electronics a technological discipline that emphasizes designing the same circuit to perform different analog and/or digital functions under different conditions. In this case, the different conditions are different temperatures.
A complementary metal oxide/semiconductor (CMOS) electronic circuit functions as a NAND gate at a power-supply potential (V(sub dd)) of 3.3 V and as NOR gate for V(sub dd) = 1.8 V. In the intermediate V(sub dd) range of 1.8 to 3.3 V, this circuit performs a function intermediate between NAND and NOR with degraded noise margin. Like the circuit of the immediately preceding article, this circuit serves as a demonstration of the evolutionary approach to design of polymorphic electronics -- a technological discipline that emphasizes evolution of the design of a circuit to perform different analog and/or digital functions under different conditions. In this instance, the different conditions are different values of V(sub dd).
An apparatus is provided that includes a first field effect transistor with a source tied to zero volts and a drain tied to voltage drain drain (Vdd) through a first resistor. The apparatus also includes a first node configured to tie a second resistor to a third resistor and connect to an input of a gate of the first field effect transistor in order for the first field effect transistor to receive a signal. The apparatus also includes a second field effect transistor configured as a unity gain buffer having a drain tied to Vdd and an uncommitted source.
Electronic logic gates that operate using N logic state levels, where N is greater than 2, and methods of operating such gates. The electronic logic gates operate according to truth tables. At least two input signals each having a logic state that can range over more than two logic states are provided to the logic gates. The logic gates each provide an output signal that can have one of N logic states. Examples of gates described include NAND/NAND gates having two inputs A and B and NAND/NAND gates having three inputs A, B, and C, where A, B and C can take any of four logic states. Systems using such gates are described, and their operation illustrated. Optical logic gates that operate using N logic state levels are also described.
Electronic logic gates that operate using N logic state levels, where N is greater than 2, and methods of operating such gates. The electronic logic gates operate according to truth tables. At least two input signals each having a logic state that can range over more than two logic states are provided to the logic gates. The logic gates each provide an output signal that can have one of N logic states. Examples of gates described include NAND/NAND gates having two inputs A and B and NAND/NAND gates having three inputs A, B, and C, where A, B and C can take any of four logic states. Systems using such gates are described, and their operation illustrated. Optical logic gates that operate using N logic state levels are also described.
The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.
Naturally occurring space radiation particles can produce transient and permanent changes in the electrical properties of electronic devices and systems. In this work, the transient radiation effects on DRAM and CMOS SRAM were considered. In addition, the effect of total ionizing dose radiation of the switching times of CMOS logic gates were investigated. Effects of transient radiation on the column and cell of MOS dynamic memory cell was simulated using SPICE. It was found that the critical charge of the bitline was higher than that of the cell. In addition, the critical charge of the combined cell-bitline was found to be dependent on the gate voltage of the access transistor. In addition, the effect of total ionizing dose radiation on the switching times of CMOS logic gate was obtained. The results of this work indicate that, the rise time of CMOS logic gates increases, while the fall time decreases with an increase in total ionizing dose radiation. Also, by increasing the size of the P-channel transistor with respect to that of the N-channel transistor, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in total ionizing dose radiation. Furthermore, a method was developed for replacing polysilicon feedback resistance of SRAMs with a switched capacitor network. A switched capacitor SRAM was implemented using MOS Technology. The critical change of the switched capacitor SRAM has a very large critical charge. The results of this work indicate that switched capacitor SRAM is a viable alternative to SRAM with polysilicon feedback resistance.
The NASA Glenn Research Center has previously reported prolonged stable operation of simple prototype 6H-SiC JFET integrated circuits (logic gates and amplifier stages) for thousands of hours at +500 C. This paper experimentally investigates the ability of these 6H-SiC JFET devices and integrated circuits to also function at cold temperatures expected to arise in some envisioned applications. Prototype logic gate ICs experimentally demonstrated good functionality down to -125 C without changing circuit input voltages. Cascaded operation of gates at cold temperatures was verified by externally wiring gates together to form a 3-stage ring oscillator. While logic gate output voltages exhibited little change across the broad temperature range from -125 C to +500 C, the change in operating frequency and power consumption of these non-optimized logic gates as a function of temperature was much larger and tracked JFET channel conduction properties.
Thin-Film Resistance Heat-Flux Sensors Circuit Indicates that Voice-Recording Disks are Nearly Full Optical Sensing of Combustion Instabilities in Gas Turbines Topics include: Crane-Load Contact Sensor; Hexagonal and Pentagonal Fractal Multiband Antennas; Multifunctional Logic Gate Controlled by Temperature; Multifunctional Logic Gate Controlled by Supply Voltage; Power Divider for Waveforms Rich in Harmonics; SCB Quantum Computers Using iSWAP and 1-Qubit Rotations; CSAM Metrology Software Tool; Update on Rover Sequencing and Visualization Program; Selecting Data from a Star Catalog; Rotating Desk for Collaboration by Two Computer Programmers; Variable-Pressure Washer; Magnetically Attached Multifunction Maintenance Rover; Improvements in Fabrication of Sand/Binder Cores for Casting; Solid Freeform Fabrication of Composite-Material Objects; Efficient Computational Model of Hysteresis; Gauges for Highly Precise Metrology of a Compound Mirror; Improved Electrolytic Hydrogen Peroxide Generator; High-Power Fiber Lasers Using Photonic Band Gap Materials; Ontology-Driven Information Integration; Quantifying Traversability of Terrain for a Mobile Robot; More About Arc-Welding Process for Making Carbon Nanotubes; Controlling Laser Spot Size in Outer Space; or Software-Reconfigurable Processors for Spacecraft.
The construction of time-domain solutions by the superposition of modes is explained for the general case, which may not have any symmetry in the lines or terminations. This simplified method requires that the logic-gate terminal impedances be approximated by linear effective resistances that can be adequately determined by SPICE analysis of the actual logic gates. Several examples of results of crosstalk calculations made by the simplified method are presented and compared with corresponding results obtained using the SPICE transmission-line methods of Tripathi and Rettig (1985) along with full SPICE models of the logic gates. The simplified approach is shown to give satisfactory agreement for most purposes.
A NASA-directed development of massively parallel processor (MPP) computers is outlined, noting intended applications for data processing for near term earth resource and environment mapping, radar, and television transmissions. The MPP is designed to perform 100 billion operations/sec to obtain satisfactory image processing, while separate processing units correct distortions, register images, calculate correlation functions, and classify multispectral characteristics. Arrays of 1s and 0s will be manipulated in analog-to-digital conversions generating separate planes corresponding to powers of binaries. Data wires are replaced by fiber-optic tubes or thousands of wires, and single logic gates are replaced by thousands of logic gates and every memory element by thousands of memory elements. Features of the interconnections and the images control processor units are detailed, along with implementation of sliders for program flexibility.
A recently developed high-speed digital correlator is especially well suited for processing readings of a passive microwave polarimeter. This circuit computes the autocorrelations of, and the cross-correlations among, data in four digital input streams representing samples of in-phase (I) and quadrature (Q) components of two intermediate-frequency (IF) signals, denoted A and B, that are generated in heterodyne reception of two microwave signals. The IF signals arriving at the correlator input terminals have been digitized to three levels (-1,0,1) at a sampling rate up to 500 MHz. Two bits (representing sign and magnitude) are needed to represent the instantaneous datum in each input channel; hence, eight bits are needed to represent the four input signals during any given cycle of the sampling clock. The accumulation (integration) time for the correlation is programmable in increments of 2(exp 8) cycles of the sampling clock, up to a maximum of 2(exp 24) cycles. The basic functionality of the correlator is embodied in 16 correlation slices, each of which contains identical logic circuits and counters (see figure). The first stage of each correlation slice is a logic gate that computes one of the desired correlations (for example, the autocorrelation of the I component of A or the negative of the cross-correlation of the I component of A and the Q component of B). The sampling of the output of the logic gate output is controlled by the sampling-clock signal, and an 8-bit counter increments in every clock cycle when the logic gate generates output. The most significant bit of the 8-bit counter is sampled by a 16-bit counter with a clock signal at 2(exp 8) the frequency of the sampling clock. The 16-bit counter is incremented every time the 8-bit counter rolls over.
The explosive growth in data collection and the need to process it efficiently, as well as the desire to automate increasingly complex tasks in transportation, medical care, manufacturing, security and many other fields have motivated a growing interest in neuromorphic computing. Unlike the binary, transistorbased ON/OFF logic gates and separate logic and memory functionalities employed in digital computing, neuromorphic computing is inspired by animal brains that use interconnected synapses and neurons to perform processing, storage and transmission of information at the same location, while only consuming ~20 W or less of power. Motivated by the brain’s efficiency, adaptability, self-learning and resiliency qualities, neuromorphic computing can be broadly defined as an approach to processing and storing information using hardware and algorithms inspired by models of biological neural systems. Present research in neuromorphic computing encompasses approaches that vary significantly in their degree of neuro-inspiration, from systems that only incorporate features such as asynchronous, event-driven operation or use crossbar arrays of non-volatile memory (NVM) elements to accelerate deep neural networks (DNNs), to designs that embrace the extreme parallelism, sparsity, reconfigurability, adaptability, complexity and stochasticity observed in nervous systems. The term ‘neuromorphic’ computing is often credited to Carver Mead, who in the 1980s investigated Si-based analog electronics to replicate functions of the animal retina. Earlier important advances in this field include the work of Frank Rosenblatt, who proposed the concept of the perceptron, Bernard Widrow, who used this concept to build one of the first analog neural networks, the Adaline and many other researchers (see ref. 6 for an historical perspective on neuromorphic computing). With the recent increase in the use of artificial intelligence and large language models, and rising concerns over the associated energy costs, interest in neuromorphic hardware has expanded rapidly. According to some estimates, driven largely by the drastic growth in the training use of artificial intelligence (AI) models using the current computing architectures, the energy cost of computing is projected to reach the energy supply worldwide by 2045. Furthermore, while this is not a realistic outcome, it means that, if more efficient computing technologies are not developed -- soon -- the world will soon become one where demand for energy and market constraints limit the continued increase of societal access to AI and cloud services from data centers. Data centers used for training and use of these models consume hundreds of terawatt hours of electricity, already past 4% of the US electricity demand.