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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Absence of localized 5⁢𝑑 1 electrons in KTaO 3 interface superconductors

Recently, an exciting discovery of orientation-dependent superconductivity was made in two-dimensional electron gas (2DEG) at the interfaces of LaAlO 3 /KTaO 3 (LAO/KTO) and EuO/KTaO 3 (EuO/KTO). The superconducting transition temperature can reach a T c of up to ∼2.2 K, which is significantly higher than its 3d counterpart LaAlO 3 /SrTiO 3 (LAO/STO) with a T c of ∼0.2 K. However, the underlying origin remains to be understood. To uncover the nature of electrons in KTO-based interfaces, we employ x-ray absorption spectroscopy (XAS) and resonant inelastic x-ray spectroscopy (RIXS) to study LAO/KTO and EuO/KTO with different orientations. We reveal the absence of dd orbital excitations in all the measured samples. Our RIXS results are well reproduced by calculations that considered itinerant 5d electrons hybridized with O 2p electrons. This suggests that there is a lack of localized Ta 5d 1 electrons in KTO interface superconductors, which is consistent with the absence of magnetic hysteresis observed in magnetoresistance (MR) measurements. Further, these findings offer new insights into our understanding of superconductivity in Ta 5d interface superconductors and their potential applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Nanometer-Scale Measurement of Grid Finger Electrical Conduction Pathways to Detect Series Resistance Degradation of Utility-Scale Silicon Solar Cells

Here, we report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility-scale photovoltaic power plant by imaging the local resistance at the Ag/Si interface of the c-Si front metallization. Scanning spreading resistance microscopy imaging with nanometer (nm) scale spatial resolution revealed that the number of point or small-area electrical contacts decreased substantially in a degraded cell compared to an unaffected cell, demonstrating the root cause of Rs degradation. The decrease in electrical contacts is likely caused by a structural change - the Ag particles in contact with the Si cell (or via a nm-thickness tunneling glass layer) aggregate into bulk Ag, and a highly resistive glass frit forms a belt shape at the Ag/Si interface. This resistive belt, with a thickness of ~1 um, blocks the current conduction from the cell emitter to the Ag grid. Our microscopy results help to unravel unambiguously the degradation mechanism and demonstrate an example of the multiscale characterization approach for understanding degradation in field-weathered PV module.

14 SOLAR ENERGY↗
DOE OSTI2022

New Approaches to Improved PEM Fuel Cell Catalyst Layers

Polymer-electrolyte membrane (PEM) fuel-cells are one of the most promising energy conversion technologies for renewable clean energy applications. A major challenge preventing the widespread use and commercialization of PEM fuel cells is achieving high performance with low-loadings of platinum group metal (PGM) catalysts. One of the factors driving performance limitations in the cell is the mass transport losses within the cathode catalyst layers (CCL) due to sluggish oxygen-reduction reactions occurring at the platinum-ionomer interface. Any resistance to transport of these ionic and gaseous species within the CCL results in mass-transport limitations and performance losses, especially at high current densities. It is known that mass-transport losses increase with reduced platinum loading, thereby creating a performance-cost tradeoff for fuel cells. A viable solution to reduce the transport resistances in the catalyst layers is to create new ionomers that can provide good ion and oxygen transport needed to accomplish high-performing fuel cell catalysts. Using this approach Tetramer Technologies and LBNL propose improved fuel-cell catalyst ionomers based on Tetramers proprietary polymer chemistry.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2025

Graphene oxide gluing layer enabling macroscale tribology applications of pristine graphene

In recent studies of two-dimensional (2D) nanomaterial-based solid lubricants, the importance of durability has been emerging for real engineering-scale applications. To achieve this, a transfer layer formation is essential to prevent the wear of the mechanical systems. However, it has been challenging for pristine graphene (PG) to induce a material transfer due to chemical inertness. In this study, we suggest an easy-to-process strategy to promote the huge material transfer of the PG onto the counterpart contacting material. We utilized graphene oxide (GO) as a gluing layer between the PG film and the counterpart contact surface to realize the superior tribological performance. The high interaction energy of the GO from its functional groups makes a contribution to the material transfer of PG, which is unveiled by a systematic analysis of the counterpart contact surface and the wear track. The huge solid transfer layer not only makes a wear-resistant contact interface between the transfer layer and the underlying film by densification and oxidation, but also reduces surface interaction energies, finally resulting in a significant improvement in durability.

graphene oxide (GO)↗
DOE OSTI2023

Time-Resolved Structural Measurement of Thermal Resistance across a Buried Semiconductor Heterostructure Interface

The precise control and understanding of heat flow in heterostructures is pivotal for advancements in thermoelectric energy conversion, thermal barrier coatings, and efficient heat management in electronic and optoelectronic devices. In this study, we employ high-angular-resolution time-resolved X-ray diffraction to structurally measure thermal resistance in a laser-excited AlGaAs/GaAs semiconductor heterostructure. Our methodology offers femtometer-scale spatial sensitivity and nanosecond time resolution, enabling us to directly observe heat transport across a buried interface. We corroborate established Thermal Boundary Resistance (TBR) values for AlGaAs/GaAs heterostructures and demonstrate that TBR arises from material property discrepancies on either side of a nearly flawless atomic interface. This work not only sheds light on the fundamental mechanisms governing heat flow across buried interfaces but also presents a robust experimental framework that can be extended to other heterostructure systems, paving the way for optimized thermal management in next-generation devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Review of Thermal Contact Resistance of Flexible Graphite Materials for Thermal Interfaces in High Heat Flux Applications

In this report the data is reviewed on thermal contact conductance (TCC) and/or thermal contact resistance (TCR) at material interfaces which employs flexible graphite (FG) materials as thermal interface materials (TIM). FG materials are often used as TIM due to their conforming nature. While the overall TCR can be estimated straightforward from measured data, the interface TCR is much more difficult to obtain. The report also discusses the interfacial thermal contact conductance between FG-tungsten and FG-Glidcop-Al15, which are envisioned for high-heat flux applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Observation of Zero-Field Transverse Resistance in AlO x / SrTi O 3 Interface Devices

Domain walls in AlO x =SrTiO 3 (AlO x =STO) interface devices at low temperatures give a rise to a new signature in the electrical transport of two-dimensional carrier gases formed at the surfaces or interfaces of STO-based heterostructures: a finite transverse resistance observed in Hall bars in zero external magnetic field. This transverse resistance depends on the local domain wall configuration and hence changes with temperature, gate voltage, thermal cycling, and position along the sample and can even change sign as a function of these parameters. The transverse resistance is observed below ≃70 K but grows and changes significantly below ≃40 K, the temperature at which the domain walls become increasingly polar. Surprisingly, the transverse resistance is much larger in (111) oriented heterostructures in comparison to (001) oriented heterostructures. Measurements of the capacitance between the conducting interface and an electrode applied to the substrate, which reflect the dielectric constant of the STO, indicate that this difference may be related to the greater variation of the temperature-dependent dielectric constant with electric field when the electric field is applied in the [111] direction. Further, the finite transverse resistance can be explained inhomogeneous current flow due to the preferential transport of current along domain walls that are askew to the nominal direction of the injected current.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Noncured Graphene Thermal Interface Materials for High-Power Electronics: Minimizing the Thermal Contact Resistance

We report on experimental investigation of thermal contact resistance, RC, of the noncuring graphene thermal interface materials with the surfaces characterized by different degree of roughness, Sq. It is found that the thermal contact resistance depends on the graphene loading, ξ, non-monotonically, achieving its minimum at the loading fraction of ξ ~15 wt%. Decreasing the surface roughness by Sq~1 μm results in approximately the factor of ×2 decrease in the thermal contact resistance for this graphene loading. The obtained dependences of the thermal conductivity, KTIM, thermal contact resistance, RC, and the total thermal resistance of the thermal interface material layer on ξ and Sq can be utilized for optimization of the loading fraction of graphene for specific materials and roughness of the connecting surfaces. Our results are important for the thermal management of high-power-density electronics implemented with diamond and other wide-band-gap semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Controlled exposure of CuO thin films through corrosion-protecting, ALD-deposited TiO 2 overlayers

Ultra-thin film coatings are used to protect semiconductor photoelectrodes from the harsh chemical environments common to photoelectrochemical energy conversion. These layers add contact transfer resistance to the interface that can result in a reduction of photoelectrochemical energy conversion efficiency of the photoelectrode. Here, we describe the concept of a partial protection layer, which allows for direct chemical access to a small fraction of the semiconductor underlayer for further functionalization by an electrocatalyst. The rest of the interface remains protected by a stable, inert protection layer. CuO is used as a model system for this scheme. Atomic layer deposition (ALD)-prepared TiO 2 layers on CuO thin films prepared from electrodeposited Cu 2 O allow for the control of interfacial morphology to intentionally expose the CuO underlayer. The ALD-TiO 2 overlayer shrinks during crystallization, while Cu 2 O in the underlayer expands during oxidation. As a result, the TiO 2 protection layer cracks to expose the oxidized underlying CuO layer, which can be controlled by preceding thermal oxidation. Furthermore, this work demonstrates a potentially promising strategy for the parallel optimization of photoelectrochemical interfaces for chemical stability and high performance.

14 SOLAR ENERGY↗
DOE OSTI2023

Super p-sulfur cathodes for quasi-solid-state lithium-sulfur-batteries

Lithium-Sulfur (Li-S) batteries have become a promising candidate to meet the current energy storage demand, with its natural abundance of materials, high theoretical capacity of 1672 mAhg-1, high energy density of 2600 Whkg-1, low cost and lower environmental impact. Sulfide based solid state electrolytes (SSEs) have received greater attention due to their higher ionic conductivity, compatible interface with sulfur-based cathodes, and lower grain boundary resistance. However, the interface between SSEs and cathodes has become a challenge in all solid-state Li-S batteries due to the rigidity of the participating surfaces. A hybrid electrolyte containing SSE coupled with a small amount of ionic liquid, was essential to improve the interface contact of the SSE with the electrodes. Coating-based cathodes were successfully fabricated using water-based carboxymethyl cellulose (CMC) solution and Styrene butadiene rubber (SBR) as the binder with low sulfur loading (0.70 mgcm-2) as well as high sulfur loading (4.0 mgcm-2). Solid-state composite powder-based cathodes pressed onto SSE (loading 4.0 mgcm-2) with enhanced electronic and ionic conductivity were fabricated with Super P: Sulfur (SP:S) and SSE. Ionic Liquids (IL) prepared using Lithium bis(trifluoromethyl sulfonyl)imide (LiTFSI) as salt, with premixed pyrrolidinium bis(trifluoromethyl sulfonyl)imide (PYR) as solvent and 1,3-dioxolane (DOL) as diluent were used to wet both SSE-electrode interfaces. The effect of IL dilution, co-solvent amount, LiTFSI concentration, C rate at which the batteries are tested and the effect of SSE inside the cathode, were systematically studied and optimized to develop a quasi-solid-state electrolyte Li-S battery (QSSLSB) with higher capacity retention and cyclability. LiTFSI (2M) dissolved in PYR:DOL(1:1) found to be optimum IL combination for low sulfur loading QSSLSBs reaching 500 mAh/g after 100 cycles while LiTFSI (3M) in PYR:DOL(1:3) was the optimum IL concentration for higher loading QSSLSBs reaching 400 mAh/g after 100 cycles. This work reports promising results of QSSLSB based on novel Li6PS5F0.5Cl0.5 Li-argyrodite solid-state electrolyte (SSE) with minute amount of IL, Super P-Sulfur (SP:S) cathode, and Li-anode. It also offers a new insight into the intimate interfacial contacts between the SSE and carbon-sulfur cathodes, which will be critical for improved electrochemical performance of quasi-solid-state lithium-sulfur batteries with high sulfur loading in the future.

25 ENERGY STORAGE↗
DOE OSTI2025

Visualizing diverse lithium growth and stripping behaviors in anode-free solid-state batteries with operando X-ray tomography

Anode-free solid-state batteries (SSBs), which eliminate the need for lithium metal use during cell assembly, have the potential to enable high energy densities and simplified manufacturing. However, the factors that control lithium growth/stripping at the anode current collector are not well understood. Here, we use operando X-ray microcomputed tomography to comprehensively image and quantify lithium deposition and stripping under various conditions in three different Li|Li 6 PS 5 Cl|current collector cells, revealing diverse behavior that depends on interface morphology, cell resistance, and solid-state electrolyte (SSE) microstructure. A cell with high resistance exhibits extensive lithium filament growth across the entire current collector interface, with filaments that grow around pre-existing pores in the SSE rather than lithium filling these pores. Lithium filament formation is partially reversible, with the cracks shrinking as lithium metal is stripped. Uniform lithium deposition is achievable at low current densities in low-resistance cells, whereas higher current densities in these cells cause an increase in interfacial roughness, which is correlated with subsequent filamentary growth at the edges of the cell. These results provide insight into filamentary vs. planar lithium growth and highlight that the evolution of lithium is sensitively dependent on SSE microstructure and electrochemical processes.

25 ENERGY STORAGE↗
DOE OSTI2021

Atomistic modeling of interface strengthening in Al-Si eutectic alloys

Al-Si cast alloys are usually composed of α-Al and Al-Si eutectic. Si flakes and Al matrix generally hold cube-on-cube orientation relationship with the primary interface (111) Al ∥(111) Si . Extensive experimental studies demonstrated that Si flakes cannot significantly improve mechanical properties of Al-Si cast alloys. We hypothesize that the weak strengthening effect associated with Si flakes might be attributed to thermomechanical properties of Al-Si interfaces besides their morphologies. To characterize Al-Si interfaces with a large lattice mismatch (> 30%), we proposed the quasi-coincident site lattice (Q-CSL) as reference lattice, and demonstrated that the Q-CSL Al-Si coherent interface has three characteristic coherent structures, one stable and low energy structure and two metastable and high energy structures. The translation vectors for the same type of coherent Q-CSL structures are consistent with three displacement shift complete (DSC) vectors. The two metastable structures can be obtained by shifting the low energy structure with three partial DSC vectors. Semi-coherent interface is composed of the low energy Q-CSL patches and three sets of interface misfit dislocations with Burgers vectors same as the DSC vectors. Atomistic simulations revealed that Al-Si interface exhibits low shear resistance. Ideal shear strength of the Q-CSL coherent interface is 110 MPa and semi-coherent interface is 20 MPa. The low shear resistance is attributed to the glide of interface misfit dislocations. Al-Si interface also exhibits low formation and migration energies of point defects. Owing to low shear strength and low formation and migration energies of point defects, interface sliding or shear readily happen under mechanical loading or during dislocation-interface interactions. Lattice dislocations can cross slip onto or climb along Al-Si interfaces. These reactions decrease the number of accumulated dislocation loops around Si flakes and promote nucleation and emission of lattice dislocations from Al-Si interfaces to matrix, consequently reduce the repulsive force on approaching dislocations and weaken Si flakes strengthening effect. In situ tension and compression tests in a scanning electron microscope reveal relatively weak strengthening effect due to Si flakes, consistent with the computed dislocation interaction with interfaces and shear behavior of interfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Local nm-Scale Imaging of Electrical Contact for Series Resistance Degradation of Silicon Solar Cells

We report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility scale solar farm by nm-scale imaging of the local resistance at the Ag/Si interface of c-Si cell front metallization. Our previous work showed that the I-V measurement of individual cells demonstrated exclusively the cell Rs degradation, and the "beads pattern" of electroluminescence indicated the degradation at the Ag grid of front metallization. Scanning spreading resistance microscopy (SSRM) imaging, which is based on the contact mode of atomic force microscopy and taken on the cross-sections of Ag/Si contact, revealed the electrical conduction pathway of Ag particles in point or small area contact with Si cell emitter. The SSRM results illustrated that the number of electrical contacts in the degraded cell decreased largely compared with the unaffected cell, demonstrating the direct cause of the Rs degradation. This reduction in electrical contact in the degraded cell could be caused by a structural change in the Ag grid during long-term field service: The Ag particles in contact with Si aggregate into the Ag bulk and a highly resistive ceramic oxide is formed in a "belt" shape at the Ag/Si interface. This resistive belt with a thickness of ~1 m blocks the current conduction from cell emitter to the Ag grid. The degraded cell shows both a morphological and chemical difference in the screen-printed finger contact compared to the unaffected cell, which likely caused the different degradation susceptibility during the long-term field service. Our results demonstrate an example of the multi-scale characterization approach for understanding photovoltaic degradation mechanisms.

ENGINEERING,SOLAR ENERGY↗
DOE OSTI2023

Non‐Linear Kinetics of The Lithium Metal Anode on Li 6 PS 5 Cl at High Current Density: Dendrite Growth and the Role of Lithium Microstructure on Creep

Abstract Interfacial instability, viz., pore formation in the lithium metal anode (LMA) during discharge leading to high impedance, current focusing induced solid–electrolyte (SE) fracture during charging, and formation/behaviour of the solid–electrolyte interphase (SEI), at the anode, is one of the major hurdles in the development of solid‐state batteries (SSBs). Also, understanding cell polarization behaviour at high current density is critical to achieving the goal of fast‐charging battery and electric vehicle. Herein, via in situ electrochemical scanning electron microscopy (SEM) measurements, performed with freshly deposited lithium microelectrodes on transgranularly fractured fresh Li6PS5Cl (LPSCl), the LiǀLPSCl interface kinetics are investigated beyond the linear regime. Even at relatively small overvoltages of a few mV, the LiǀLPSCl interface shows non‐linear kinetics. The interface kinetics possibly involve multiple rate‐limiting processes, i.e., ion transport across the SEI and SE|SEI interfaces, as well as charge transfer across the LiǀSEI interface. The total polarization resistance R P of the microelectrode interface is determined to be ≈ 0.8 Ω cm 2 . It is further shown that the nanocrystalline lithium microstructure can lead to a stable LiǀSE interface via Coble creep along with uniform stripping. Also, spatially resolved lithium deposition, i.e., at grain surface flaws, grain boundaries, and flaw‐free surfaces, indicates exceptionally high mechanical endurance of flaw‐free surfaces toward cathodic load (>150 mA cm −2 ). This highlights the prominent role of surface defects in dendrite growth.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

The study of charge carrier transport at nanoscale electrical contacts is crucial for the development of next-generation electronics. In this study, we review recent modeling efforts on quantum tunneling, current crowding, and contact resistance across electrical interfaces with nanometer scale dimensions. A generalized self-consistent model for quantum tunneling induced electron transport in metal–insulator–metal (MIM) junctions is summarized. Rectification of a dissimilar MIM junction is reviewed. A modified two-dimensional (2D) transmission line model is used to investigate the effects of spatially varying specific contact resistivity along the contact length. The model is applied to various types of electrical contacts, including ohmic contacts, MIM junction based tunneling contacts, and 2D-material-based Schottky contacts. Roughness engineering is recently proposed to offer a possible paradigm for reducing the contact resistance of 2D-material-based electrical contacts. Contact interface engineering, which can mitigate current crowding near electrical contacts by spatially designing the interface layer thickness or properties, without requiring an additional material or component, is briefly reviewed. Tunneling engineering is suggested to eliminate severe current crowding in highly conductive ohmic contacts by introducing a thin tunneling layer or gap between the contact members. Furthermore, unsolved problems and challenges are also discussed.

2D materials↗
DOE OSTI2026

Ultra-low thermal resistance and pressure drop copper and copper-tungsten diamond-shaped pin fin cold plates for liquid cooling of electronics

Modern and future data centers face increasing cooling challenges due to increasing chip thermal design power and die size, along with the need to reduce energy consumption used for cooling. High performance cooling solutions that maintain a low chip junction temperature are needed to ensure electronics reliability. This work develops an ultra-low thermal resistance and low pressure drop 75 mm × 75 mm cold plate, intended for next-generation electronics cooling. The cold plate features an array of diamond-shaped pin fins and integrated copper tungsten heat spreader, selected for its low coefficient of thermal expansion which reduces thermomechanical deformation and allows for closer integration of the cold plate with silicon dies. Starting with 300 candidate designs, three-dimensional computational fluid dynamics simulations predict the thermal-hydraulic performance of cold plate subsections. The highest performing geometries are evaluated with high fidelity simulations. Four cold plates are manufactured for experiments: three with diamond-shaped pin fins and one with straights fins for comparison purposes. The cold plates are fabricated from copper-tungsten (CuW), copper (Cu), or aluminum-silicon-magnesium alloy (AlSi10Mg). The diamond-shaped pin fins achieve a roughly 15 % lower thermal resistance compared to the conventional straight fin microchannel. The highest performing design achieves a chip-to-coolant (including thermal interface material) thermal resistance of 9.0 K/kW in CuW and 6.9 K/kW in Cu under a 1 kW heat load with an inlet-to-outlet pressure drop of 9.0 kPa and water as the working fluid. This work demonstrates ultra-low thermal resistance and pressure drop cold plates for large die, high heat load applications, and shows that CuW is an attractive cold plate material for improved reliability in next generation data center cooling.

Coefficient of thermal expansion↗