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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1997

Video display engineering and optimization system

A video display engineering and optimization CAD simulation system for designing a LCD display integrates models of a display device circuit, electro-optics, surface geometry, and physiological optics to model the system performance of a display. This CAD system permits system performance and design trade-offs to be evaluated without constructing a physical prototype of the device. The systems includes a series of modules which permit analysis of design trade-offs in terms of their visual impact on a viewer looking at a display.

Larimer, James↗
NASA NTRS1985

Fault models

A major problem in the qualification of integrated circuit cells and in the development of adequate tests for the circuits is to lack of information on the nature and density of fault models. Some of this information is being obtained from the test structures. In particular, the Pinhole Array Capacitor is providing values for the resistance of gate oxide shorts, and the Addressable Inverter Matrix is providing values for parameter distributions such as noise margins. Another CMOS fault mode, that of the open-gated transistor, is examined and the state of the transistors assessed. Preliminary results are described for a number of open-gated structures such as transistors, inverters, and NAND gates. Resistor faults are applied to various CMOS gates and the time responses are noted. The critical value for the resistive short to upset the gate response was determined.

Sayah, H. R.↗
NASA NTRS1986

A lumped parameter mathematical model for simulation of subsonic wind tunnels

Equations for a lumped parameter mathematical model of a subsonic wind tunnel circuit are presented. The equation state variables are internal energy, density, and mass flow rate. The circuit model is structured to allow for integration and analysis of tunnel subsystem models which provide functions such as control of altitude pressure and temperature. Thus the model provides a useful tool for investigating the transient behavior of the tunnel and control requirements. The model was applied to the proposed NASA Lewis Altitude Wind Tunnel (AWT) circuit and included transfer function representations of the tunnel supply/exhaust air and refrigeration subsystems. Both steady state and frequency response data are presented for the circuit model indicating the type of results and accuracy that can be expected from the model. Transient data for closed loop control of the tunnel and its subsystems are also presented, demonstrating the model's use as a control analysis tool.

Krosel, S. M.↗
NASA NTRS2012

Total Dose Effects on Bipolar Integrated Circuits at Low Temperature

Total dose damage in bipolar integrated circuits is investigated at low temperature, along with the temperature dependence of the electrical parameters of internal transistors. Bandgap narrowing causes the gain of npn transistors to decrease far more at low temperature compared to pnp transistors, due to the large difference in emitter doping concentration. When irradiations are done at temperatures of -140 deg C, no damage occurs until devices are warmed to temperatures above -50 deg C. After warm-up, subsequent cooling shows that damage is then present at low temperature. This can be explained by the very strong temperature dependence of dispersive transport in the continuous-time-random-walk model for hole transport. For linear integrated circuits, low temperature operation is affected by the strong temperature dependence of npn transistors along with the higher sensitivity of lateral and substrate pnp transistors to radiation damage.

linear integrated circuits↗
NASA NTRS2008

Embedded ESD Protection Proof of Concept

The purpose of this project is to characterize and correlate Electrostatic Discharge (ESD) sensitivity levels of an Integrated Circuit (IC) package using Transmission Line Pulse (TLP) and Human Body Model (HBM) methods. This characterization will be used as a baseline ESD sensitivity level to demonstrate improvement to the ESD sensitivity of the IC package through the use of EPI-FLO(Trade Mark) Polymer Voltage Suppression (PVS) protection devices developed and manufactured by Electronic Polymers, Inc. (EPI).

Human Body Model (HBM) methods↗
NASA NTRS1991

Designing Accelerated Tests Of Electromigration

Method for design of accelerated tests of electromigration (as in microscopic conductors in integrated circuits) based partly on simplified mathematical model of electromigration and partly on error analysis. Objective to determine quickly operating life of tested components under normal operating conditions by extrapolation from lifetime measurements at operating stresses greater than normal. Involves compromise between reducing testing time by increasing stresses and reducing uncertainty in extrapolated lifetime by decreasing stresses.

Buehler, Martin G.↗
NASA NTRS2025

Design and Simulation of Greatly Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C Operation

This work compares design layouts and circuit simulations of the next two prototype NASA Glenn SiC JFET-R IC fabrication runs designated “IC Gen. 12” and “IC Gen. 13”. Even though both generations employ the same physical JFET gate length and chip size, SPICE simulations predict drastic improvements to IC capabilities and performance metrics for Gen. 13 over Gen. 12. The main factors behind simulated performance differences are thinner n-channel layer leading to reduced operating voltages and switch to stepper-based photolithography that enables roughly 4-fold layout area reductions for functionally identical circuit blocks.

Silicon Carbide↗
NASA NTRS1983

Annual Conference on Nuclear and Space Radiation Effects, Gatlinburg, TN, July 18-21, 1983, Proceedings

Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates.

Source record↗
NASA NTRS1999

Design of the Wind Tunnel Model Communication Controller Board

The NASA Langley Research Center's Wind Tunnel Reinvestment project plans to shrink the existing data acquisition electronics to fit inside a wind tunnel model. Space limitations within a model necessitate a distributed system of Application Specific Integrated Circuits (ASICs) rather than a centralized system based on PC boards. This thesis will focus on the design of the prototype of the communication Controller board. A portion of the communication Controller board is to be used as the basis of an ASIC design. The communication Controller board will communicate between the internal model modules and the external data acquisition computer. This board is based around an Field Programmable Gate Array (FPGA), to allow for reconfigurability. In addition to the FPGA, this board contains buffer Random Access Memory (RAM), configuration memory (EEPROM), drivers for the communications ports, and passive components.

Wilson, William C.↗
NASA NTRS1974

Quasi-perfect FIFO: Synchronous or asynchronous with application in controller design for the UNICON laser memory

The first-in-first-out memory buffer (FIFO), is an elastic digital memory whose main application is in data buffering between devices operating at different rates. Data written into the top is moved autonomously down toward the bottom of the FIFO to the lowest unoccupied location, and data read from the bottom of the FIFO will cause data from the top to move autonomously down toward the bottom. The FIFO is available in MOS LSI asynchronous form with data rate in the 1 MHz region. The FIFO described yields a simple high-speed iterative implementation, either synchronous of asynchronous. Because of this simple iterative structure, the FIFO is expandable in both number of words and bits per word, and it is attractive from the viewpoint of integrated-circuit production. For the synchronous FIFO, a model was built and successfully used in the controller for the UNICON laser memory. For the asynchronous FIFO, a model was built and also successfully used in a high-performance magnetic tape controller.

Lim, R. S.↗
NASA NTRS1991

Software Engineering Laboratory (SEL) cleanroom process model

The Software Engineering Laboratory (SEL) cleanroom process model is described. The term 'cleanroom' originates in the integrated circuit (IC) production process, where IC's are assembled in dust free 'clean rooms' to prevent the destructive effects of dust. When applying the clean room methodology to the development of software systems, the primary focus is on software defect prevention rather than defect removal. The model is based on data and analysis from previous cleanroom efforts within the SEL and is tailored to serve as a guideline in applying the methodology to future production software efforts. The phases that are part of the process model life cycle from the delivery of requirements to the start of acceptance testing are described. For each defined phase, a set of specific activities is discussed, and the appropriate data flow is described. Pertinent managerial issues, key similarities and differences between the SEL's cleanroom process model and the standard development approach used on SEL projects, and significant lessons learned from prior cleanroom projects are presented. It is intended that the process model described here will be further tailored as additional SEL cleanroom projects are analyzed.

Green, Scott↗
NASA NTRS2000

Temperature Distribution Within a Defect-Free Silicon Carbide Diode Predicted by a Computational Model

Most solid-state electronic devices diodes, transistors, and integrated circuits are based on silicon. Although this material works well for many applications, its properties limit its ability to function under extreme high-temperature or high-power operating conditions. Silicon carbide (SiC), with its desirable physical properties, could someday replace silicon for these types of applications. A major roadblock to realizing this potential is the quality of SiC material that can currently be produced. Semiconductors require very uniform, high-quality material, and commercially available SiC tends to suffer from defects in the crystalline structure that have largely been eliminated in silicon. In some power circuits, these defects can focus energy into an extremely small area, leading to overheating that can damage the device. In an effort to better understand the way that these defects affect the electrical performance and reliability of an SiC device in a power circuit, the NASA Glenn Research Center at Lewis Field began an in-house three-dimensional computational modeling effort. The goal is to predict the temperature distributions within a SiC diode structure subjected to the various transient overvoltage breakdown stresses that occur in power management circuits. A commercial computational fluid dynamics computer program (FLUENT-Fluent, Inc., Lebanon, New Hampshire) was used to build a model of a defect-free SiC diode and generate a computational mesh. A typical breakdown power density was applied over 0.5 msec in a heated layer at the junction between the p-type SiC and n-type SiC, and the temperature distribution throughout the diode was then calculated. The peak temperature extracted from the computational model agreed well (within 6 percent) with previous first-order calculations of the maximum expected temperature at the end of the breakdown pulse. This level of agreement is excellent for a model of this type and indicates that three-dimensional computational modeling can provide useful predictions for this class of problem. The model is now being extended to include the effects of crystal defects. The model will provide unique insights into how high the temperature rises in the vicinity of the defects in a diode at various power densities and pulse durations. This information also will help researchers in understanding and designing SiC devices for safe and reliable operation in high-power circuits.

Kuczmarski, Maria A.↗
NASA NTRS1968

Development of a Space Vehicle Electromagnetic Interference/compatibility Specification. Volume 3 - System Specification

This specification represents a new approach to controlling electromagnetic interference. In this approach the system integration contractor will be responsible for the development of discrete specification limits to be utilized on the program to which this specification is applied. The specification limits imposed upon subsystem contractors will be developed by the use of a computer program, available from the procuring agency, which is designed to consider the total system electromagnetic environment in the computation of these limits. The integration contractor will be required to mathematically model those circuits which represent required emitters and receptors of electromagnetic energy on the space vehicle. There are contained herein, a list of available computer models into which must be inserted particular parameters of the spacecraft subsystems. These functional models, when inserted into the computer program, will develop discrete specification limits based upon the requirements of the particular system modelled.

Cooperstein, B. D.↗
NASA NTRS1993

Direct time integration of Maxwell's equations in two-dimensional dielectric waveguides for propagation and scattering of femtosecond electromagnetic solitons

We present what are to our knowledge first-time calculations from vector nonlinear Maxwell's equations of femtosecond soliton propagation and scattering, including carrier waves, in two-dimensional dielectric waveguides. The time integration efficiently implements linear and nonlinear convolutions for the electric polarization, and the nonlinear convolution accounts for two quantum effects, the Kerr and Raman interactions. By retaining the optical carrier, the new method solves for fundamental quantities - optical electric and magnetic fields in space and time - rather than a nonphysical envelope function. It has the potential to provide an unprecedented two- and three-dimensional modeling capability for millimeter-scale integrated-optical circuits with submicrometer engineered inhomogeneities.

Joseph, Rose M.↗
NASA NTRS1998

Computational Modeling of Semiconductor Dynamics at Femtosecond Time Scales

The Interchange No. NCC2-5149 deals with the emerging technology of photonic (or optoelectronic) integrated circuits (PICs or OEICs). In PICs, optical and electronic components are grown together on the same chip. To build such devices and subsystems, one needs to model the entire chip. PICs are useful for building components for integrated optical transmitters, integrated optical receivers, optical data storage systems, optical interconnects, and optical computers. For example, the current commercial rate for optical data transmission is 2.5 gigabits per second, whereas the use of shorter pulses to improve optical transmission rates would yield an increase of 400 to 1000 times. The improved optical data transmitters would be used in telecommunications networks and computer local-area networks. Also, these components can be applied to activities in space, such as satellite to satellite communications, when the data transmissions are made at optical frequencies. The research project consisted of developing accurate computer modeling of electromagnetic wave propagation in semiconductors. Such modeling is necessary for the successful development of PICs. More specifically, these computer codes would enable the modeling of such devices, including their subsystems, such as semiconductor lasers and semiconductor amplifiers in which there is femtosecond pulse propagation. Presently, there are no computer codes that could provide this modeling. Current codes do not solve the full vector, nonlinear, Maxwell's equations, which are required for these short pulses and also current codes do not solve the semiconductor Bloch equations, which are required to accurately describe the material's interaction with femtosecond pulses. The research performed under NCC2-5149 solves the combined Maxwell's and Bloch's equations.

Agrawal, Govind P.↗