Field and charge dependence of radiation damage in silicon.
Impurity concentration effect of electron irradiation damage in photovoltaic silicon cell with shallow p-n junction
SILICON↗
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Properties of GaP Schottky barrier diodes at elevated temperatures.
Gallium phosphide Schottky barrier diodes, discussing construction and metals used, barrier height relationships to impurity concentration and temperature, rectifying characteristics and internal quantum efficiency
Nannichi, Y.↗
Interference effect on annealing temperature of A and E centers in silicon.
The significance of recent experimental observations on the annealing defects in n-type silicon has been examined. The observed anomalous annealing temperatures of A and E centers and their impurity concentration dependence are explained by an interference between the two centers.
Fang, P. H.↗
GaAs vapor-grown bipolar transistors.
Discussion of an approach for the fabrication of high-temperature GaAs transistors which is centered on the preparation of n-p-n three-layered structures entirely by a vapor-phase growth technique, as described by Tietjen and Amick (1966). The low growth temperature of approximately 750 C is thought to reduce contamination during crystal growth and to contribute to the reasonably high minority-carrier lifetimes obtained for the vapor-grown p-n junctions. The fact that impurity concentrations and layer thicknesses can be precisely controlled for epitaxial layers as thin as 1 micrometer is an important feature of this growth technique.
Nuese, C. J.↗
Electron mobility and free-carrier absorption in GaAs - Determination of the compensation ratio
Theoretical calculations of electron mobility and free-carrier absorption in n-type GaAs at room temperature were carried out taking into consideration all major scattering processes. It was found that satisfactory agreement between theoretical and experimental results on free-carrier absorption is obtained only when the effect of compensation is quantitatively taken into account. In conjunction with experimental studies it is shown that the electron mobility (for n greater than 10 to the 15th per cu cm) and free-carrier absorption (for n greater than 10 to the 16th per cu cm) are sufficiently sensitive to the ionized impurity concentration to provide a reliable means for determining the compensation ratio. Convenient procedures are presented for the determination of the compensation ratio from the free-carrier absorption coefficient and from the computed values of room-temperature electron mobility. Values of the compensation ratio obtained by these two procedures are in good agreement provided the carrier-concentration variations in the material are not appreciably greater than 10%.
Walukiewicz, W.↗
Impurities in silicon solar cells
The paper investigates the effects of metallic impurities on the performance of silicon solar cells. Czochralski and polycrystalline ingots were employed with boron and phosphorus as primary dopants and with controlled additions of secondary impurities. The data obtained from over 200 crystals indicate that impurity-induced performance loss is primarily due to a reduction of the base diffusion length. Based on this observation, a model is developed which predicts cell performance as a function of secondary impurity concentrations. The model calculations are in good agreement with experimental values except for Cu, Ni, Fe, and to a lesser degree, carbon, which at higher concentrations degrade the cell by junction defect mechanisms.
Davis, J. R., Jr.↗
Bent crystal X-ray topography
A television X-ray topographic camera system was constructed. The system differs from the previous system in that it incorporates the X-ray TV imaging system and has a semi-automatic wafer loading system. Also the X-ray diffraction is in a vertical plane. This feature makes wafer loading easier and makes the system compatible with any commercial X-ray generating system. Topographs and results obtained from a study of the diffraction contrast variation with impurity concentration for both boron implanted and boron diffused silicon are included.
Parker, D. L.↗
Thickness dependences of solar cell performance
The significance of including factors such as the base resistivity loss for solar cells thicker than 100 microns and emitter and BSF layer recombination for thin cells in predicting the fill factor and efficiency of solar cells is demonstrated analytically. A model for a solar cell is devised with the inclusion of the dopant impurity concentration profile, variation of the electron and hole mobility with dopant concentration, the concentration and thermal capture and emission rates of the recombination center, device temperature, the AM1 spectra and the Si absorption coefficient. Device equations were solved by means of the transmission line technique. The analytical results were compared with those of low-level theory for cell performance. Significant differences in predictions of the fill factor resulted, and inaccuracies in the low-level approximations are discussed.
Sah, C. T.↗
Magnetoacoustic stress measurements in steel
Uniaxial stress effects on the low-field magnetoacoustic interaction have been studied using bulk compressional waves and Rayleigh surface waves in numerous steel samples having various impurity concentrations (Namkung et al., 1984). The results invariably showed that the initial slope of acoustic natural velocity variations, with respect to net induced magnetization parallel to the stress axis, is positive under tension and negative under compression. The results of current measurements in railroad rail steel having about 0.68 wt percent carbon content are typical for medium range carbon steels. The low-field natural velocity slope in this particular type of steel, which is almost zero when unstressed, becomes steeper with increased magnitude of stress in both directions. Hence, the nondestructive determination of the sign of residual stress in railroad wheels and rails is possible using this technique. This paper discusses the basic physical mechanism underlying the experimental observations and presents the results obtained in railroad rail steel.
Namkung, M.↗
Impurity effects in silicon for high efficiency solar cells
Model analyses indicate that sophisticated solar cell designs including, e.g., back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings can produce devices with conversion efficiencies above 20 percent (AM1). To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentration at which cell performance degrades is more than an order of magnitude lower for an 18-percent cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as-grown material can lead to the production of devices with efficiencies aboved 18 percent, as has been verified experimentally.
Hopkins, R. H.↗
Optimization methods and silicon solar cell numerical models
The goal of this project is the development of an optimization algorithm for use with a solar cell model. It is possible to simultaneously vary design variables such as impurity concentrations, front junction depth, back junctions depth, and cell thickness to maximize the predicted cell efficiency. An optimization algorithm has been developed and interfaced with the Solar Cell Analysis Program in 1 Dimension (SCAPID). SCAPID uses finite difference methods to solve the differential equations which, along with several relations from the physics of semiconductors, describe mathematically the operation of a solar cell. A major obstacle is that the numerical methods used in SCAPID require a significant amount of computer time, and during an optimization the model is called iteratively until the design variables converge to the value associated with the maximum efficiency. This problem has been alleviated by designing an optimization code specifically for use with numerically intensive simulations, to reduce the number of times the efficiency has to be calculated to achieve convergence to the optimal solution. Adapting SCAPID so that it could be called iteratively by the optimization code provided another means of reducing the cpu time required to complete an optimization. Instead of calculating the entire I-V curve, as is usually done in SCAPID, only the efficiency is calculated (maximum power voltage and current) and the solution from previous calculations is used to initiate the next solution.
Girardini, K.↗
Optimization methods and silicon solar cell numerical models
An optimization algorithm for use with numerical silicon solar cell models was developed. By coupling an optimization algorithm with a solar cell model, it is possible to simultaneously vary design variables such as impurity concentrations, front junction depth, back junction depth, and cell thickness to maximize the predicted cell efficiency. An optimization algorithm was developed and interfaced with the Solar Cell Analysis Program in 1 Dimension (SCAP1D). SCAP1D uses finite difference methods to solve the differential equations which, along with several relations from the physics of semiconductors, describe mathematically the performance of a solar cell. A major obstacle is that the numerical methods used in SCAP1D require a significant amount of computer time, and during an optimization the model is called iteratively until the design variables converge to the values associated with the maximum efficiency. This problem was alleviated by designing an optimization code specifically for use with numerically intensive simulations, to reduce the number of times the efficiency has to be calculated to achieve convergence to the optimal solution.
Girardini, K.↗
A study of the applicability of gallium arsenide and silicon carbide as aerospace sensor materials
Most of the piezoresistive sensors, to date, are made of silicon and germanium. Unfortunately, such materials are severly restricted in high temperature environments. By comparing the effects of temperature on the impurity concentrations and piezoresistive coefficients of silicon, gallium arsenide, and silicon carbide, it is being determined if gallium arsenide and silicon carbide are better suited materials for piezoresistive sensors in high temperature environments. The results show that the melting point for gallium arsenide prevents it from solely being used in high temperature situations, however, when used in the alloy Al(x)Ga(1-x)As, not only the advantage of the wider energy band gas is obtained, but also the higher desire melting temperature. Silicon carbide, with its wide energy band gap and higher melting temperature suggests promise as a high temperature piezoresistive sensor.
Hurley, John S.↗
High purity isotopically enriched Ge-70 and Ge-74 single crystals - Isotope separation, growth, and properties
Ge-70 and Ge-74 isotopes were successfully separated from natural Ge, and were zone purified. Several highly enriched, high purity Ge-70 and Ge-74 single crystals were grown by the vertical Bridgman method. The growth system was designed for reliable growth of low dislocation density, high purity Ge single crystals of about 4 g weight. A Ge-70 and a Ge-74 crystal were selected for complete characterization. In spite of the large surface-to-volume ratio of these ingots, both Ge-70 and Ge-74 crystals contain low electrically active chemical net-impurity concentrations of about 2 x 10 exp 12/cu cm, which is 2 orders of magnitude better than that of Ge-74 crystals previously grown by two different groups. Isotopic enrichment of the Ge-70 and the Ge-74 crystals is 96.3 percent and 96.8 percent, respectively. The residual donors and acceptors present in both crystals were identified as phosphorus and copper, respectively. In addition, less than 10 exp 11/cu cm Ga, Al, and In were found in the Ge-70 crystal.
Itoh, Kohei↗
Growth experiment of narrow band-gap semiconductor PbSnTe single crystals in space (M-1)
An experiment on crystal growth of Pb(1-x)Sn(x)Te in microgravity is planned. This material is an alloy of the compound semiconductors PbTe and SnTe. It is a promising material for infrared diode lasers and detectors in the wavelength region between 6 and 30 micron. Since the electrical properties of Pb(1-x)Sn(x)Te depend greatly on the Pb/Sn ratio and crystalline defects as well as impurity concentration, homogeneous, defect-free, high-quality crystals are anticipated. Although many growth methods, such as the pulling method, the Bridgman method, the vapor growth method, etc., have been applied to the growth of Pb(1-x)Sn(x)Te, large, homogeneous, low-defect-density crystals have not yet been grown on Earth. The unsuccessful results were caused by buoyancy-driven convection in the fluids induced by the specific gravity difference between heated and cooled fluids on Earth. A crystal is grown by cooling the melt from one end of the ampoule. In crystal growth from the melt, about 30 percent of the SnTe in the melt is rejected at the solid-liquid interface during solidification. On Earth, the rejected SnTe is completely mixed with the remaining melt by convection in the melt. Therefore, SnTe concentration in the melt, and accordingly in the crystal, increases as the crystal grows. In the microgravity environment, buoyancy-driven convection is suppressed because the specific gravity difference is negligible. In that case, the rejected SnTe remains at the solid-liquid interface and its concentration increases only at the interface. If the growth rate is higher than the PbTe-SnTe interdiffusion rate, the amount of SnTe which diffuses from the interface into the melt increases as SnTe piles up at the interface, and finally it balances the amount of rejected SnTe during solidification, resulting in steady-state SnTe transportation at the interface. By using this principle, compositionally homogeneous crystals can be grown. Furthermore, low-defect-density crystals will be grown in microgravity, because convection causes crystalline defects by mising hot and cold fluids and generating temperature fluctuations in them.
Yamada, Tomoaki↗
MeV ion-beam analysis of optical data storage films
Our objectives are threefold: (1) to accurately characterize optical data storage films by MeV ion-beam analysis (IBA) for ODSC collaborators; (2) to develop new and/or improved analysis techniques; and (3) to expand the capabilities of the IBA facility itself. Using H-1(+), He-4(+), and N-15(++) ion beams in the 1.5 MeV to 10 MeV energy range from a 5.5 MV Van de Graaff accelerator, film thickness (in atoms/sq cm), stoichiometry, impurity concentration profiles, and crystalline structure were determined by Rutherford backscattering (RBS), high-energy backscattering, channeling, nuclear reaction analysis (NRA) and proton induced X-ray emission (PIXE). Most of these techniques are discussed in detail in the ODSC Annual Report (February 17, 1987), p. 74. The PIXE technique is briefly discussed in the ODSC Annual Report (March 15, 1991), p. 23.
Leavitt, J. A.↗
A Magnetoresistive Heat Switch for the Continuous ADR
In compensated elemental metals at low temperature, a several Tesla field can suppress electronic heat conduction so thoroughly that heat is effectively carried by phonons alone. In approximately one mm diameter single crystal samples with impurity concentrations low enough that electron conduction is limited by surface scattering, the ratio of zerofield to high-field thermal conductivity can exceed ten thousand. We have used this phenomenon to build a compact, solid-state heat switch with no moving parts and no enclosed fluids. The time scale for switching states is limited by time scale for charging the magnet that supplies the controlling field. Our design and fabrication techniques overcome the difficulties associated with manufacturing and assembling parts from single crystal tungsten. A clear disadvantage of the magnetoresistive switch is the mass and complexity of the magnet system for the controlling field. We have discovered a technique of minimizing this mass and complexity, applicable to the continuous adiabatic demagnetization refrigerator.
Canavan, E. R.↗
Solutal Convection Around Growing Protein Crystal and Diffusional Purification in Space
This work theoretically addressed two subjects: 1) onset of convection, 2) distribution of impurities. Onset of convection was considered analytically and numerically. Crystal growth was characterized by slow surface incorporation kinetics, i.e. growth kinetic coefficient beta (cm/s) small as compared to the typical bulk diffusion rate, D(sub 1)/h, where D(sub 1) is diffusivity of major crystallizing protein and h is the crystal size. Scaling type analysis predicted two laws on how the convection rate, v, essentially the Peclet number, Pe exactly equal to vh/D(sub 1), depends on dimensionless kinetic coefficient a exactly equal to beta h/D(sub 1). Namely: Pe = C(sub 2/5)(aRa(sup 2/5)) and Pe = C(sub 1) aRa. Here, Reynolds number Ra = rho(sub 1)(sup 0)gh(sup 3)(rho(sub p) - rho(sub w))/rho(sup p)rho(sub 1)vD(sub 1), v being solution viscosity. The constants C(sub 2/5), exactly equal to 0.28 and C(sub 1) exactly equal to 10(exp -2) found from the full scale computer simulation for a cylindrical crystal inside big cylindrical vessel. The linear boundary conditions connecting protein and impurity concentration at the interface with the flux to/from the interface was applied. No-slip condition for Navier-Shocker equations was employed. With these conditions, flow and concentration distributions were calculated. Validity of the Pe(Ra) dependencies follows for wide range of parameters for which numerical calculations have been accomplished and presented by various points.
Chernov, A. A.↗