Implant biotelemetry and microelectronics.
Implant telemetry techniques and associated problems and potential of microelectronics
BIOINSTRUMENTATION↗
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Results for “implantation”
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Multichannel implantable telemetry system
Multichannel telemetry system is used for chronic implantation in animals to monitor a variety of physiological parameters. A hermetically sealed unit, the system uses a time-sharing multiplex scheme to commutate between various sensor inputs and enables the number of channels to be increased or decreased.
Fryer, T. B.↗
Investigation of implantable multichannel biotelemetry systems Semiannual report, Mar. - Sep. 1967
System design and fabrication methods for multiple channel, physiologically implantable, telemetering systems
Ko, W. H.↗
An implantable multi-channel temperature transmitter
Implantable multi-channel temperature transmitter
Fryer, T. B.↗
Investigation if implantable multichannel biotelemetry systems Semiannual report, Sep. 1967 - Feb. 1968
Operation and maintenance of multichannel, physiologically implantable telemetering systems for biological measurements
Ko, W. H.↗
Investigation of implantable multichannel biotelemetry Semiannual report, Mar. - Aug. 1968
Multichannel, physiologically implantable telemetering system for biological measurements
Ko, W. H.↗
Development of ion implantation techniques for microelectronics
Ion implantation process for fabricating active devices in high bandgap semiconductor materials for high temperature operation
Dunlap, H. L.↗
A multichannel implantable telemetry system.
Multichannel telemetry system for chronic implantation in animals to monitor physiological parameters
Datnow, B.↗
Development of ion implantation techniques for microelectronics
Ion implantation techniques for p-n junction diodes of silicon carbide and gallium arsenide
Dunlap, H. L.↗
Charged particle sources for implantation and surface reactions Final report
High temperature ion source developed for implantation and surface reactions of Ar, Pb, and Ga ions
Crawford, C. K.↗
Radiation hardening of thermal oxides on silicon via ion implantation
Ion implantation for reducing space charge buildup in thermal oxides on silicon exposed to ionizing radiation
Donovan, R. P.↗
Diodes in silicon carbide by ion implantation
N-type layer formation with ion implanted nitrogen or Sb in p-type alpha-SiC, evaluating electrical characteristics, discussing junction devices formed
Dunlap, H. L.↗
Anneal behavior of defects in ion-implanted GaAs diodes
Ion-implanted GaAs junction diodes anneal behavior and defect nature
Hunsperger, R. G.↗
Miniature implantable sonomicrometer system
Heart dimension measurement by miniature implantable ultrasonic sonomicrometer, describing system design and operation
Lee, R. D.↗
Telemeter adaptable for implanting in an animal Patent
Biotelemetry apparatus with dual voltage generators for implanting in animals
Fryer, T. B.↗
Ion implantation damage effects in silicon
Ion implantation lattice damage effects in crystalline silicon with allowance for optical reflectivity, considering annealing temperature and amorphous layer formation
Eberle, D. E.↗
Minimally invasive healing of bone implant-cement interfaces by aerogel cement and remote heating
Not Available
Lavelle, Cole↗