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Powder mixtures of 40 m/o Si3N4-60 m/o Al2O3 were hot-pressed at 4000 psi at various holding temperatures from 1100 C to 1700 C. Scanning and transmission electron microscopy results were correlated to X-ray phase analysis and density measurements. The progressively developed microstructure was used to interpret the densification behavior of SiAlON.
Results are presented for high-temperature (1370, 1430, 1540, 1590 C) slow-strain-rate compression tests on cylindrical specimens of hot-pressed Si3N4 of the HS-130 brand under various compressive loads. The results are presented in terms of number of longitudinal cracks, percent increase in diameter, percent decrease in length, and percent loss in weight. Scanning electron micrographs are presented of cylindrical surfaces of compression specimens tested at 1430 C for 640 MN/sq m and at 1590 C for 220 MN/sq m. As compared to results obtained by other investigators, it appears more likely that the cracks resulting from compressive loading are due to subcritical crack growth caused by circumferential tensile stresses acting across grain boundaries that contain a viscous silicate glass phase.
A novel material system and its fabrication technique have been defined and applied to the production of SiGe thermoelectric material through the hot pressing of 50-100 A ultrafine particulates into 80/20 SiGe. Relative to conventionally processed SiGe, a reduction of thermal conductivity of up to 40 percent is achieved in conjunction with an enhancement of material figure-of-merit of the order of 10-15 percent.
This paper presents the results of measurements of electrical resistivity, Seebeck coefficient, thermal conductivity, as well as Hall carrier concentration, and mobility, for hot pressed SiGe 80 at. pct Si-20 at. pct Ge (SiGe) thermoelectric materials containing 0.24-3.0 at. pct boron. The carrier concentration was varied by annealing and quenching at different high temperatures. Figure-of-merit, Z, was found to be 0.60 +/- 0.03 x 10 exp -3/K over a carrier concentration range from 1.8- 3.5 x 10 exp -20/cu cm. This result is very encouraging from a production standpoint, since the dopant concentration is not critical.
Auger electron spectroscopy in conjunction with X-ray powder diffraction and scanning electron microscopy is used to analyze the grain-boundary phases of Y2O3- and CeO2-doped Si3N4 hot-pressed materials in order to demonstrate that the additives concentrate predominantly in the grain boundaries of Si3N4 in the form of various oxynitride phases. A high oxygen content observed in sample fracture surfaces was found to be consistent with the existence of an oxygen-enriched phase in the grain boundaries. The presence of yttrium and cerium in the fracture surfaces and an overall increase in the O/N ratio imply that the additive oxides are predominantly concentrated in the intergranular phases.
The effects of addition of various lanthanide oxides and their mixture with Y2O3 on the sintering of Si3N4 were investigated. The addition of simple and mixed lanthanide oxides promoted the densification of Si3N4 in hot-pressing at 1800 C under 300-400kg/ centimeters squared for 60 min. The crystallization of yttrium and lanthanide-silicon oxynitrides which was observed inn the sintered body containing yttrium-lanthanide mixed oxides as additives led to the formation of a highly refractory Si3N4 ceramic having a bending strength of 82 and 84 kg/millimeters squared at room temperature and 1300 C respectively. In a Y2O3+La2O3 system, a higher molar ratio of La2O3 to Y2O3 gave a higher hardness and strength at high temperatures. It was found that 90 min was an optimum sintering time for the highest strength.
The combined effects of temperature and pressure on the resulting density of a sialon (i.e., a ceramic composed of Si, Al, O, and N) are evaluated. Pressures in the 3.5-27.5 MPa range and temperatures in the 1550-1750 C range are considered. It is found that: (1) fully dense sialon bodies may be produced at lower temperatures than those usually used in the field, (2) the phase equilibrium reaction is increased by increased pressure, (3) the iso-density contour may be used to help design the desired microstructure, (4) phase changes occurring in the sample during hot pressing influenced sialon densification to a large extent, and (5) microstructures exceeding 98% theoretical density suggest that plastic deformation has contributed to densification.
A comprehensive experimental and theoretical work has been conducted in order to optimize the thermoelectric properties of Si_(80)Ge_(20) materials and reach the goal of a combined figure of merit value of 0.85x10^(-3) K^(-1) averaged over a 600-1000 C temperature range. Improvement for the n-type material has been obtained by determining the optimum amounts of gallium and phosphorus dopants necessary to achieve optimum carrier mobility and concentration. The emphasis is now on the consistent reproducibility of these results through understanding and control of the hot-pressing parameters relating microstructure and composition to the transport properties. The optimum doping level has now been firmly established for p-type materials, and work is concentrating on the reduction in thermal conductivity. BN ultra fine particles have been successfully incorporated into fully dense samples and have resulted in desired improvement of the figure of merit...
Ceramic borides, such as hafnium diboride (HfB2) and zirconium diboride (ZrB2), are members of a family of materials with extremely high melting temperatures referred to as Ultra High Temperature Ceramics (UHTCs). UHTCs constitute a class of promising materials for use in high temperature applications, such as sharp leading edges on future-generation hypersonic flight vehicles, because of their high melting points. The controlled development of microstructure has become important to the processing of UHTCs, with the prospect of improving their mechanical and thermal properties. The improved oxidation resistance of HfB2 has also become important if this material is to be successfully used at temperatures above 2000 C. Furthermore, the use of UHTCs on the leading edges of vehicles traveling at hypersonic speeds will mean exposure to a mixed oxidation environment comprised of both molecular and atomic oxygen. The current study has investigated the high-temperature oxidation behavior of HfB2-based materials in a pure O2 environment, as well as in environments containing different levels of dissociated oxygen (O/O2). Materials were processed by two techniques: conventional hot pressing (HP) and electric field-assisted sintering (FAS). Their oxidation behavior was evaluated in both a tube furnace at 1250 C for 3 hours and in a simulated re-entry environment in the Advanced Heating Facility (AHF) arcjet at NASA Ames Research Center, during a 10-minute exposure to a cold wall heat flux of 250W/sq cm and stagnation pressure of 0.1-0.2 atm. The microstructure of the different materials was characterized before and after oxidation using scanning electron microscopy (SEM).
Preparing halide perovskite films by solvent-free, powder-based processing approaches currently attracts more and more attention. However, working solar cells employing dry, powder-based halide perovskite thin films, have not been demonstrated so far. Herein, perovskite solar cells are presented where the absorber layer is prepared by transferring readily synthesized perovskite powders into a compact thin film using a fully dry-powder-processing concept. Compact thin films are deposited via an optimized powder aerosol deposition (PAD) process. Pressing at 120 °C further improves the morphology and the optoelectronic film properties. Integrating the perovskite films in a solar cell configuration results in fully working devices, with champion power conversion efficiencies of >6%. While the (optoelectronic) properties of the PAD-processed films are found to be comparable with their solution-processed counterparts, investigations of the solar cell stack suggest deterioration of the electron-transport layer properties due to the PAD process, and the presence of hydrates at the perovskite surface to be important factors that contribute to the limited solar cell efficiency. Herein, perspectives to overcome the identified limitations are outlined, emphasizing the high potential and realizability of efficient perovskite solar cells based on dry-powder-processing approaches in the future.
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Lithium based chalcogenides have many uses in the nuclear science field. 6 LiInSe 2 (or LISe) has been researched extensively because of its ability to operate in both scintillator and semiconductor modes. Here, this makes it useful in applications including nuclear material detection for national security, space applications, and medical imaging. In some applications growth and fabrication costs are of concern, as it takes upwards of 40 days to synthesize a charge, grow a crystal and fabricate a detector. Ceramics are a solution for this long route of preparation. This research shows that using a 6 LiInSe 2 ceramic instead of a single crystal significantly decreases the time required to make a detector. In the present work, ceramic wafers can be formed using a mechanical press equipped with a heating attachment. The resulting ceramic wafer performs very similar to a slow-growth single crystal when used in the scintillator mode.
It is proposed that Apollo 14 type breccias lithify by sintering of particles of matrix glass under stress-free conditions. Meteorite impacts generate the heat necessary for sintering. Compacted angular particles of glass with the composition of an Apollo 14 rock were sintered experimentally. Loose clods of sub 37 micron grains form in several days at 700 C. Synthetic rocks, which texturally resemble the breccias, were produced at 795 C and above in 7.5 hours. Glass devitrified with increasing temperature. At 850 C, devitrification prevents much further densification of the synthetic breccias after 2 hours. Experiments compressing glass at 500 bars at 600 C produced dense vitreous masses which did not resemble lunar breccias. Confining pressure does not play a major role in lithifying the breccias. It is concluded that Apollo 14 type lunar breccias form at shallow depths at 800 C+ in a period of minutes to days.
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