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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Strain mapping of three-dimensionally structured two-dimensional materials

Strain plays a crucial role in tuning materials’ properties, influencing their optical, electrical, and chemical performances. In two-dimensional (2D) materials, applied stress often induces out-of-plane deformation, resulting in a more intricate three-dimensional (3D) topography, where mapping the strain remains a challenge due to the limitations of conventional characterization techniques. In this work, we introduce BRIGHT (Bragg-Rod Informed, Gradient-based Height-mapping Technique), an integrated method for reconstructing both the topography and planar strain profile of 3D-structured 2D materials using nanobeam four-dimensional scanning transmission electron microscopy (4D-STEM). We apply BRIGHT to a MoS2-MoSe2 transition metal dichalcogenide (TMD) lateral heterojunctions exhibiting built-in strain and out-of-plane ripples and show that varying heterojunction widths lead to distinct surface morphologies and corresponding changes in the planar strain distribution. These results establish a foundation for more effective strain engineering in 2D materials by accounting for out-of-plane structural features, thereby enabling more precise control of strain-dependent properties.

Mireles, Adan [Rice Univ., Houston, TX (United Sta↗
DOE OSTI2024

Three dimensional vertically structured electronic devices

An apparatus includes at least one vertical transistor, where the at least one vertical transistor includes: a substrate including a first semiconductor material, an array of three dimensional (3D) structures above the substrate, a sidewall heterojunction layer positioned on at least one vertical sidewall of each 3D structure, and an isolation region positioned between the 3D structures. Each 3D structure includes the first semiconductor material. The sidewall heterojunction layer includes a second semiconductor material, where the first and second semiconductor material have different bandgaps.

Conway, Adam↗
DOE OSTI2026

Screen-Printed SHJ Solar Cells with Complex Silver Inks

Metallization using complex metal inks has gained significant research interest due to its cost-effectiveness and ability to achieve performance comparable to traditional nanoparticle pastes. This study introduces the use of complex silver (Ag) inks applied via industrial screen-printing for silicon heterojunction (SHJ) solar cell metallization. The printed Ag lines exhibit a contact resistivity on SHJ tin-doped indium oxide (ITO) surfaces as low as approximately 0.2-12 mO cm2. Photoluminescence imaging reveals minimal surface passivation degradation (iVoc < 3.5 mV), while scanning electron microscopy (SEM) shows a denser structure compared to Ag layer from nanoparticle pastes. The printed Ag grid features thin (approximately 1 micrometer), continuous fingers approximately 100-120 micrometer wide, significantly thinner than conventional approximately 20-30 micrometer fingers produced with nanoparticle-based pastes. Double printing achieves SHJ device efficiencies exceeding 20%, the highest reported for industrial solar cell precursors using this technology. These findings highlight the potential of complex Ag inks as a sustainable alternative to particle-based pastes, reducing Ag consumption and processing temperatures without compromising efficiency.

14 SOLAR ENERGY↗
DOE OSTI2024

Nanostructured C@CuS Core–Shell Framework with High Lithium-Ion Storage Performance

In this study, we have synthesized a nanostructured core–shell framework of carbon-coated copper sulfide (C@CuS) through a one-step precipitation technique. The carbon sphere template facilitated the nucleation of CuS nanostructures. The synthesized nanocomposites have demonstrated remarkable lithium-ion storage capabilities when utilized as an anode in lithium-ion batteries. Notably, they exhibit an impressive rate capability of 314 mAh g -1 at a high current density of 5000 mA g -1 , along with excellent long-term cycle stability, maintaining 463 mAh g -1 at 1000 mA g -1 after 800 cycles. This superior performance is due to the core–shell architecture of the composite, where the carbon core enhances the conductivity of CuS nanoparticles and mitigates volume expansion, thus preventing capacity loss. Our study not only elucidates the significance of carbon in the construction of nano-heterojunctions or composite electrodes but also presents a practical approach to significantly boost the electrochemical performance of CuS and other metal sulfides.

25 ENERGY STORAGE↗
DOE OSTI2024

Flexible Soft X-Ray Image Sensors based on Metal Halide Perovskites With High Quantum Efficiency

Soft X-ray imaging is a powerful tool to explore the structure of cells, probe material with nanometer resolution, and investigate the energetic phenomena in the universe. Conventional soft X-ray image sensors are by and large Si-based charge coupled devices that suffer from low frame rates, complex fabrication processes, mechanical inflexibility, and required cooling below -60 °C. Here, a soft X-ray photodiode is reported based on low-cost metal halide perovskite with comparable performance to commercial Si-based device. Nanothrough network electrode minimized the optical loss due to the shadowing of insensitive layers, while a multidimensional perovskite heterojunction is generated to reduce the photo-generated carrier loss. Further, this strategy promoted a record quantum efficiency of 8 × 10 3 % without cooling, several orders of magnitude greater than the previously achieved. Flexible and curved soft X-ray imaging arrays are fabricated based on this high-performance device structure, demonstrating stable soft X-ray response and sharp imaging capabilities. This work highlights the low-cost and efficient perovskite photodiode as a strong candidate for the next-generation soft X-ray image sensors.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Lyotropic Liquid Crystal Mediated Assembly of Donor Polymers Enhances Efficiency and Stability of Blade-Coated Organic Solar Cells

Conjugated polymers can undergo complex, concentration-dependent self-assembly during solution processing, yet little is known about its impact on film morphology and device performance of organic solar cells. Herein, lyotropic liquid crystal (LLC) mediated assembly across multiple conjugated polymers is reported, which generally gives rise to improved device performance of blade-coated non-fullerene bulk heterojunction solar cells. Using D18 as a model system, the formation mechanism of LLC is unveiled employing solution X-ray scattering and microscopic imaging tools: D18 first aggregates into semicrystalline nanofibers, then assemble into achiral nematic LLC which goes through symmetry breaking to yield a chiral twist-bent LLC. The assembly pathway is driven by increasing solution concentration – a common driving force during evaporative assembly relevant to scalable manufacturing. This assembly pathway can be largely modulated by coating regimes to give 1) lyotropic liquid crystalline assembly in the evaporation regime and 2) random fiber aggregation pathway in the Landau–Levich regime. The chiral liquid crystalline assembly pathway resulted in films with crystallinity 2.63 times that of films from the random fiber aggregation pathway, significantly enhancing the T80 lifetime by 50-fold. The generality of LLC-mediated assembly and enhanced device performance is further validated using polythiophene and quinoxaline-based donor polymers.

14 SOLAR ENERGY↗
DOE OSTI2025

Revisiting the Role of Entropy for Charge Separation in 1D Pi-Conjugated Semiconductors

Free carrier generation in organic donor/acceptor heterojunctions and redox-doped organic semiconductors is poorly understood, since assumed tight electron-hole binding conflicts with observed high free carrier yields. Cornerstone analyses that have guided the field for over 15 years predict that entropy can stabilize free charges in 2D and 3D pi-conjugated semiconductors but not in 1D systems. Here, the impact of entropy on charge generation in 1D pi-conjugated semiconductors is revisited by exploiting a greatly simplified system where enthalpy considerations alone should not allow for free charge generation. Noncontact solution-phase microwave conductivity is used to investigate the carrier density-dependent conductivity and dielectric constant in isolated chemically doped semiconducting single-walled carbon nanotubes in a low-dielectric solvent. Dopant chemical structure dramatically influences the carrier density-dependent complex conductivity, with bulky dopants facilitating carrier escape even at carrier densities below one carrier per nanotube. Three distinct numerical calculations show that entropic stabilization dramatically lowers the Gibbs energy barrier for free charge generation, explaining the high yield of free carriers, even in 1D. This renewed understanding of entropy's role in carrier generation has important implications for designing organic electronic devices-such as solar cells and thermoelectric energy harvesters-for enhanced carrier yield, conductivity, and performance.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Revealing the Origin and Nature of the Buried Metal‐Substrate Interface Layer in Ta/Sapphire Superconducting Films

Abstract Despite constituting a smaller fraction of the qubit's electromagnetic mode, surfaces and interfaces can exert significant influence as sources of high‐loss tangents, which brings forward the need to reveal properties of these extended defects and identify routes to their control. Here, we examine the structure and composition of the metal‐substrate interfacial layer that exists in Ta/sapphire‐based superconducting films. Synchrotron‐based X‐ray reflectivity measurements of Ta films, commonly used in these qubits, reveal an unexplored interface layer at the metal‐substrate interface. Scanning transmission electron microscopy and core‐level electron energy loss spectroscopy identified an intermixing layer (≈0.65 ± 0.05 nm) at the metal‐substrate interface containing Al, O, and Ta atoms. Density functional theory modeling reveals that the structure and properties of the Ta/sapphire heterojunctions are determined by the oxygen content on the sapphire surface prior to Ta deposition for two atomic terminations of sapphire. Using a multimodal approach, we gained deeper insights into the interface layer between the metal and substrate, which suggests that the orientation of deposited Ta films depend on the surface termination of sapphire. The observed elemental intermixing at the metal‐substrate interface influences the thermodynamic stability and electronic behavior of the film, which may also affect qubit performance.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Rapid Synthesis of Carbon‐Supported Ru‐RuO₂ Heterostructures for Efficient Electrochemical Water Splitting

Abstract Development of high‐performance electrocatalysts for water splitting is crucial for a sustainable hydrogen economy. In this study, rapid heating of ruthenium(III) acetylacetonate by magnetic induction heating (MIH) leads to the one‐step production of Ru‐RuO₂/C nanocomposites composed of closely integrated Ru and RuO₂ nanoparticles. The formation of Mott‐Schottky heterojunctions significantly enhances charge transfer across the Ru‐RuO 2 interface leading to remarkable electrocatalytic activities toward both hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) in 1 m KOH. Among the series, the sample prepares at 300 A for 10 s exhibits the best performance, with an overpotential of only −31 mV for HER and +240 mV for OER to reach the current density of 10 mA cm⁻ 2 . Additionally, the catalyst demonstrates excellent durability, with minimal impacts of electrolyte salinity. With the sample as the bifunctional catalysts for overall water splitting, an ultralow cell voltage of 1.43 V is needed to reach 10 mA cm⁻ 2 , 160 mV lower than that with a commercial 20% Pt/C and RuO₂/C mixture. These results highlight the significant potential of MIH in the ultrafast synthesis of high‐performance catalysts for electrochemical water splitting and sustainable hydrogen production from seawater.

Pan, Dingjie [Department of Chemistry and Biochemi↗
DOE OSTI2025

A General Strategy for Bandgap Engineering Via Anion‐Lattice Doping in High‐Entropy Oxides

Bandgap engineering is a critical tool for tailoring the electronic properties of functional materials, traditionally achieved by modifying the cation sublattice. Here, a generalizable strategy is introduced that leverages facile anion-lattice doping in high entropy materials to modulate the bandgap in high-entropy metal oxides (HEMOs). By incorporating nitrogen into a single-phase high-entropy metal oxide/nitride (HEMO:HEMN) solid solution, a substantial bandgap reduction is achieved from 3.55 eV (HEMO) to ≈2.46 eV (HEMO:HEMN), significantly enhancing electronic conductivity. Unlike conventional bandgap tuning approaches that rely on cation substitution or heterojunction formation, this method exploits anion-mediated entropy stabilization, enabling uniform bandgap narrowing across the entire solid solution. This anion-lattice engineering strategy is broadly applicable to high-entropy systems, providing a new pathway for designing energy materials with tailored electronic properties. The resulting HEMO:HEMN solid solution exhibits a tenfold increase in capacitance and capacity compared to HEMO in supercapacitor and lithium-ion battery tests, demonstrating the transformative potential of anion-driven bandgap modulation for next-generation energy storage and conversion technologies.

energy storage↗
DOE OSTI2024

Enhanced UV–Vis Rejection Ratio in Metal/BaTiO 3 /β–Ga 2 O 3 Solar–Blind Photodetectors

The fabrication and characterization of metal/BaTiO 3 /β-Ga 2 O 3 solar-blind photodetectors are reported. β-Ga 2 O 3 is a promising material for solar-blind photodetectors due to its large bandgap and the availability of low defect-density melt-grown substrates. In this work, structures are introduced that employ high-permittivity dielectric/semiconductor heterojunctions to enhance the performance of a Schottky photodetector. It is shown that integrating the high-k dielectric BaTiO 3 reduces the dark current by ≈10 4 , all but eliminates illumination induced Schottky barrier lowering, and increases the UV–vis rejection ratio by a factor greater than 9 × 10 3 compared to a Schottky photodetector. It is hypothesized that the high permittivity of the dielectric overcomes the influence of self-trapped holes in Ga 2 O 3 to reduce the peak electric field at the dielectric/metal interface, thereby eliminating the effects of Schottky barrier lowering on illuminated β-Ga 2 O 3 photodetectors. Additionally, it is hypothesized that the increase in the UV–vis rejection ratio is caused by the “dead layer” that forms at the BaTiO 3 /Pt interface.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Ultrafast Formation of Charge Transfer Trions at Molecular‐Functionalized 2D MoS 2 Interfaces

Abstract In this work, we investigate trion dynamics occurring at the heterojunction between organometallic molecules and a monolayer transition metal dichalcogenide (TMD) with transient electronic sum frequency generation (tr‐ESFG) spectroscopy. By pumping at 2.4 eV with laser pulses, we have observed an ultrafast hole transfer, succeeded by the emergence of charge‐transfer trions. This observation is facilitated by the cancellation of ground state bleach and stimulated emission signals due to their opposite phases, making tr‐ESFG especially sensitive to the trion formation dynamics. The presence of charge‐transfer trion at molecular functionalized TMD monolayers suggests the potential for engineering the local electronic structures and dynamics of specific locations on TMDs and offers a potential for transferring unique electronic attributes of TMD to the molecular layers.

Jing, Yuancheng↗
DOE OSTI2024

Mono-/Bimetallic Doped and Heterostructure Engineering for Electrochemical Energy Applications

Designing efficient materials is crucial to meeting specific requirements in various electrochemical energy applications. Mono-/bimetallic doped and heterostructure engineering have attracted considerable research interest due to their unique functionalities and potential for electrochemical energy conversion and storage. However, addressing material imperfections such as low conductivity and poor active sites requires a strategic approach to design. This review explores the latest advancements in materials modified by mono-/bimetallic doped and heterojunction strategies for electrochemical energy applications. It can be subdivided into three key points: (i) the regulatory mechanisms of metal doping and heterostructure engineering for materials; (ii) the preparation methods of materials with various engineering strategies; and (iii) the synergistic effects of two engineering approaches, further highlighting their applications in supercapacitors, alkaline ion batteries, and electrocatalysis. Finally, the review concludes with perspectives and recommendations for further research to advance these technologies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Long-Term Photovoltaic System Performance in Cold, Snowy Climates

As countries around the world transition towards renewable energy, there is increasing interest in using photovoltaic (PV) technologies to help decarbonize northern and alpine communities due to their scalability and affordability. However, a barrier to large-scale adoption of PV in cold climates is long-term performance uncertainty under snowfall, freeze-thaw cycles, low temperatures, and high winds. In this work, we provide a comprehensive review of published silicon degradation rates in cold Koppen-Geiger climate classifications of Dfb (humid continental), Dfc (subarctic), and ET (tundra). We first analyze the system degradation rates of three subarctic ground-mounted photovoltaic sites in North America using the RdTools year-on-year method: an Al-BSF double-axis tracking site in Fairbanks, Alaska (65degrees N); a PERC and silicon heterojunction bifacial vertical and south-tilted site in Fairbanks, Alaska; and a PERC south-facing fixed-tilt site in Fort Simpson, Northwest Territories (62degrees N). Degradation rates of these newly analyzed sites vary between -0.4%/year and -1.5%/year. Combining these data with previously reported cold climate degradation rates, we show that the distribution of cold climate degradation peaks at -0.1%/year to -0.2%/year but has a large tail with rates above -0.5%/year. The average reported cold climate degradation rate is -0.45%/year, whereas the median value is -0.33%/year. These results suggest that despite frequent freeze-thaw cycles and potential exposure to high wind and snow loads, PV systems in cold climates tend to degrade slower than PV systems in warmer climates. The limited sample size of reported degradation rates in cold climates (27) motivates the need for further data acquisition and monitoring efforts as new technologies are deployed.

14 SOLAR ENERGY↗
DOE OSTI2025

UV + Damp Heat Induced Power Losses in Fielded Utility N-Type Si PV Modules

A recent trend in commercial PV modules is a transition to n-type silicon cells, including passivated emitter rear totally diffused (n-PERT), tunnel oxide passivated contact (TOPCon), and silicon heterojunction (SHJ). There is evidence via lab studies that some of these cells are more susceptible to UV induced degradation (UVID), yet there is a lack of confirmation that such degradation occurs in the field. Current IEC standards designed to screen for early module failures require only minimal UV exposure (15 kWh/m2 280-400 nm, ~2-3 months equivalent outdoor exposure). Here, we investigate fielded n-PERT silicon (Si) modules from a commercial utility that show power losses of ~2%/year. We present a comprehensive picture of the physics and chemistry of degradation supported by both module and cell electronic characterization (EL, PL, IV, EQE, and DLIT) and materials-level morphological and chemical analysis (SEM, EDS, XPS, FTIR, and HPLC). All sampled site modules show short circuit current (Isc) and open circuit voltage (Voc) losses when compared to unfielded spares, with the most severely degraded also having losses in fill factor (FF). We identify two different degradation modes contributing to overall power loss: (1) external quantum efficiency (EQE) measurements show losses in the blue range of the spectra, indicative of cell surface recombination losses, and (2) variations in high series resistance (Rs) at the cell level that are correlated with compositional differences in cell metallization. Using unfielded spares, we were able to reproduce Voc, Isc, and EQE losses via a minimum UV stress of 67.5 kWh/m2 (280-400 nm), 4.5x the exposure currently required in IEC 61215-2 (MQT 10). Degradation continued with additional UV dosage equivalent to the fielded modules (405 kWh/m2 total), with power loss leveling out at an average of 6.1%. Subsequent 1000 h of 85% RH/85degrees C damp heat testing showed that cells exposed to UV underwent additional severe series resistance degradation, even those without the susceptible paste composition seen in the field, whereas non-UV exposed cells saw little change. We attribute this to higher concentrations of acetic acid generated on the UV exposed area of the module, leading to degradation of the gridline/cell interface and high Rs. This study is unique in that it reproduces field observed utility scale UVID with an accelerated test and supports the need for standards development for longer UV exposure combined with other stress factors to catch materials interplay within a module package.

14 SOLAR ENERGY↗
DOE OSTI2025

Effect of lithium diffusion into Ga 2 O 3 thin films

The integration of lithium based compounds (e.g., Li:NiO/Ga 2 O 3 , LiGa 5 O 8 /Ga 2 O 3 ) in Ga 2 O 3 based pn-heterojunctions raises concerns about interface stability, i.e., Li diffusion effects on Ga 2 O 3 properties. In this work the ex-situ diffusion of Li is investigated in three different Ga 2 O 3 epilayers systems [(001) κ-Ga 2 O 3 and (−201) β-Ga2O3 heteroepitaxy on (001) α-Al 2 O 3 , and (010) β-Ga 2 O 3 homoepitaxy] at relevant temperatures for the synthesis / processing of Li-based epilayers. It is here experimentally demonstrated and quantified the Li diffusion in all the investigated Ga 2 O 3 epilayers systems and Li bulk (D Li,bulk ) and 2D defects (D Li,2D ) diffusion coefficients are provided. In the case of the (010) β-Ga 2 O 3 homoepitaxial layer (nominally free of structural defects), hybrid functional theory calculations foresee a diffusion mechanism mediated by Ga vacancies (VGa). Moreover, in the (010) β-Ga 2 O 3 homo-layer a significant effect on its functional properties (e.g., additional Raman vibrational modes, induced conductivity in an otherwise insulating sample) upon the Li-diffusion process is experimentally highlighted and tentatively related to the passivation of acceptor defects (i.e., formation of V Ga -nLi complexes).

Defects↗
DOE OSTI2025

How do substituted phenyl-based cations affect the structure-property-stability relationship of low-dimensional perovskites?

Incorporating organic bulky cations in the precursor or post-treatment to achieve two-dimensional/three-dimensional (2D/3D) heterojunction is an effective strategy for enhancing the stability of perovskite materials. However, the issue of insufficient charge transport in 2D perovskites limits their development, and the fundamental mechanism of out-of-plane carrier transport remains unclear. This study designed and synthesized seven organic phenyl-core cations, differentiated at the 1- and 1,4-positions, and identified the impacts on the corresponding properties of the 2D crystalline perovskite. Shorter cations facilitated a more compact arrangement of adjacent inorganic layers, aligning to favor charge transport along the vertical direction. In addition, introducing high electronegativity led to increased intermolecular interactions, resulting in enhanced structural stability and improved phenyl ring π-orbital overlap and interlayer electron coupling, yielding efficient charge transport. Resilience to thermal stressing of the perovskite was strongly correlated with the carbon chain length of the spacer cations. Here, the increase in cation length and the reduction in the rigidity of the amino-terminal both aided in the dispersion of thermal stress in the inorganic framework. Additional hydrogen bonding also contributed to mitigating structural disorder.

14 SOLAR ENERGY↗
DOE OSTI2025

Kinetics of photogenerated carbon dangling bonds in organic photovoltaic thin Films: An EPR study

Here, we report an investigation of the early kinetics of photogenerated carbon dangling bond (CDB) formation and annealing in organic photovoltaic bulk heterojunction (BHJ) thin film blends under oxygen- and moisture-free conditions, using X-band electron paramagnetic resonance (EPR) spectroscopy. The study focuses on donor:acceptor BHJ blends of PCE12:PCBM and PCE12:ITIC films, where PCE12 is PBDB-T. The time evolution of CDBs in such drop-cast BHJ films irradiated at 300 nm is monitored. The early kinetics of CDB formation, critical for understanding OPV degradation mechanisms, is studied. Theoretical analysis of the defect growth mechanism suggests a monomolecular defect creation model where the defect count follows a power-law t β with irradiation time t, where β ∼ 0.55–0.58, in excellent agreement with the theoretically expected value of β = 1/2. This model is compatible with CDB formation by the holes in donor sites adjacent to acceptors, likely assisted by energy released from quenching of nearby excitons by the holes, elucidating the physical mechanism underlying CDB formation. This is significant for designing improved materials, which mitigate defect creation, and consequently advancing the development of stable OPV systems.

42 ENGINEERING↗