SEARCH · Engineering Papers

Results for “grain boundary”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3

All sources NASA NTRS DOE OSTI

DOE OSTI2025

Feature engineering descriptors, transforms, and machine learning for grain boundaries and variable-sized atom clusters

Abstract Obtaining microscopic structure-property relationships for grain boundaries is challenging due to their complex atomic structures. Recent efforts use machine learning to derive these relationships, but the way the atomic grain boundary structure is represented can have a significant impact on the predictions. Key steps for property prediction common to grain boundaries and other variable-sized atom clustered structures include: (1) describing the atomic structure as a feature matrix, (2) transforming the variable-sized feature matrix to a fixed length common to all structures, and (3) applying a machine learning algorithm to predict properties from the transformed matrices. We examine how these steps and different combinations of engineered features impact the accuracy of grain boundary energy predictions using a database of over 7000 grain boundaries. Additionally, we assess how different engineered features support interpretability, offering insights into the physics of the structure-property relationships.

36 MATERIALS SCIENCE↗

NASA NTRS1984

A theoretical study of the effects of interacting grain boundaries on electron-beam-induced currents

The influence of several grain boundaries on the electron-beam-induced current in polycrystalline silicon is investigated. The simple geometry contemplated here, consisting of two plane parallel grain boundaries possessing different effective, albeit constant, surface recombination velocities, intersecting a planar junction at right angles allows for an exact solution of the corresponding boundary value problem. It is shown that if the distance between the grain boundaries w becomes less than the diffusion length for minority carriers L within the grain, the grain boundary with the smaller effective recombination velocity becomes less and less visible the smaller the ratio w/L.

Luke, K. L.↗

NASA NTRS1982

Enhanced diffusion of phosphorus at grain boundaries

Enhanced diffusion of phosphorus at grain boundaries in cast polycrystalline photovoltaic materials (Wacker, HEM, and Semix) was studied. It was found that the enhancements for the three materials were the same, indicating that the properties of boundaries are similar, even though they were grown by different techniques. In addition, it was observed that grain boundaries capable of enhancing the diffusion always have strong recombination activities. Both phenomena could be related to dangling bonds existing at the boundaries. The present study gives the first evidence that incoherent second order twins of 111/115-plane type are diffusion-active.

Cheng, L. J.↗

DOE OSTI2026

Irradiation-induced grain boundary migration in an ion irradiated Fe-Ni-Cr-Mn alloy

Irradiation-induced grain boundary migration (RIGM) has previously been observed in different metallic systems. However, the mechanisms and dependence on irradiation conditions remained unclear. Here, we report on radiation-induced GB migration (RIGM) in a coarse-grain Fe-Ni-Cr-Mn austenitic alloy irradiated with Fe ions at 400 °C to 15, 35, and 70 dpa. Grain boundary migration is only observed in the irradiated regions and exhibits a linear dependence on the locally delivered dose, as estimated from SRIM calculations. Notably, the same linear dependence is noted across the nominal doses. Furthermore, the evidence points to grain boundary migration being mediated by the flux of point defects to grain boundaries and motivates additional systematic studies of RIGM in these systems.

Grain boundary↗

NASA NTRS1991

Microstructural changes in Beta-silicon nitride grains upon crystallizing the grain-boundary glass

Crystallizing the grain boundary glass of a liquid phase sintered Si3N4 ceramic for 2 h or less at 1500 C led to formation of gamma Y2Si2O7. After 5 h at 1500 C, the gamma Y2Si2O7 had transformed to beta Y2Si2O7 with a concurrent dramatic increase in dislocation density within beta Si3N4 grains. Reasons for the increased dislocation density is discussed. Annealing for 20 h at 1500 C reduced dislocation densities to the levels found in as-sintered materials.

Lee, William E.↗

NASA NTRS2001

Microprobe Evaluations of Grain Boundary Segregation in KM4 and IN100

Turbine disk alloys subjected to fatigue cycles with dwells at high temperatures and stresses can fail by cracking along grain boundaries. This could be due to concentrated creep deformation or environmental attack at grain boundaries. It would be important to identify any chemical segregation along grain boundaries to aid understanding of this intergranular failure mode. The objective of this study was to evaluate the degree of chemical segregation present at the grain boundaries of two disk alloys, KM4 and IN 100. An electron microprobe employing wavelength dispersive x-ray chemical analyses was used to characterize the chemistry along multiple grain boundaries in metallographically prepared samples of each alloy. Some degrees of boron, chromium, and cobalt enrichment of grain boundaries were observed in each alloy.

Gabb, T. P.↗

NASA NTRS1984

Cellular interface morphologies in directional solidification. II - The effect of grain boundaries

A singular perturbation analysis valid for small grain-boundary slopes is used with the one-sided model for solidification to show that grain boundaries introduce imperfections into the symmetry of the developing cellular interfaces which rupture the junction between the family of planar shapes and the bifurcating cellular families. Undulating interfaces are shown to develop first near grain boundaries, and to evolve with decreasing temperature gradient either by a smooth transition from the almost planar family or by a sudden jump to moderate-amplitude cellular forms, depending on the growth rate.

Ungar, Lyle H.↗

NASA NTRS1986

Grain boundary oxidation and oxidation accelerated fatigue crack nucleation and propagation

Fatigue life at elevated temperatures is often shortened by oxidation. Grain boundary oxidation penetrates deeper than the surface oxidation. Therefore, grain boundary oxide penetration could be the primary cause of accelerated fatigue crack nucleation and propagation, and the shortened fatigue life at elevated temperatures. Grain boundary oxidation kinetics was studied and its statistical scatter was analyzed by the Weibull's distribution function. The effects of grain boundary oxidation on shortened fatigue life was analyzed and discussed. A model of intermittent microruptures of the grain boundary oxide was proposed for the fatigue crack growth in the low frequency region. The proposed model is consistent with the observations that fatigue crack growth rate in the low frequency region with hold time at K sub max is inversely proportional to cyclic frequency and that crack growth is intergranular.

Liu, H. W.↗

NASA NTRS2006

Multiscale Modeling of Grain-Boundary Fracture: Cohesive Zone Models Parameterized From Atomistic Simulations

A multiscale modeling strategy is developed to study grain boundary fracture in polycrystalline aluminum. Atomistic simulation is used to model fundamental nanoscale deformation and fracture mechanisms and to develop a constitutive relationship for separation along a grain boundary interface. The nanoscale constitutive relationship is then parameterized within a cohesive zone model to represent variations in grain boundary properties. These variations arise from the presence of vacancies, intersticies, and other defects in addition to deviations in grain boundary angle from the baseline configuration considered in the molecular dynamics simulation. The parameterized cohesive zone models are then used to model grain boundaries within finite element analyses of aluminum polycrystals.

Glaessgen, Edward H.↗

DOE OSTI2024

Mapping domain structures near a grain boundary in a lead zirconate titanate ferroelectric film using X-ray nanodiffraction

The effect of an electric field on local domain structure near a 24° tilt grain boundary in a 200 nm-thick Pb(Zr 0.2 Ti 0.8 )O 3 bi-crystal ferroelectric film was probed using synchrotron nanodiffraction. The bi-crystal film was grown epitaxially on SrRuO 3 -coated (001) SrTiO 3 24° tilt bi-crystal substrates. From the nanodiffraction data, real-space maps of the ferroelectric domain structure around the grain boundary prior to and during application of a 200 kV cm −1 electric field were reconstructed. In the vicinity of the tilt grain boundary, the distributions of densities of c -type tetragonal domains with the c axis aligned with the film normal were calculated on the basis of diffracted intensity ratios of c - and a -type domains and reference powder diffraction data. Diffracted intensity was averaged along the grain boundary, and it was shown that the density of c -type tetragonal domains dropped to ∼50% of that of the bulk of the film over a range ±150 nm from the grain boundary. This work complements previous results acquired by band excitation piezoresponse force microscopy, suggesting that reduced nonlinear piezoelectric response around grain boundaries may be related to the change in domain structure, as well as to the possibility of increased pinning of domain wall motion. The implications of the results and analysis in terms of understanding the role of grain boundaries in affecting the nonlinear piezoelectric and dielectric responses of ferroelectric materials are discussed.

36 MATERIALS SCIENCE↗

NASA NTRS1990

Effects of grain size and grain boundary on critical current density of high T(sub c) superconducting oxides

By means of adding impurity elements in high T sub c oxides, the effects were studied of grain size and grain boundary on the critical current density of the following systems: YBa2Cu3O(7-y) and Bi-Pr-Sr-Ca-Cu-O. In order to only change the microstructure instead of the superconductivity of the grains in the samples, the impurity elements were added into the systems in terms of the methods like this: (1) substituting Y with the lanthanide except Pr, Ce, and Tb in YBa2Cu3O(7-y) system to finning down grains in the samples, therefore, the effect can be investigated of the grain size on the critical current density of 1:2:3 compounds; (2) mixing the high T sub c oxides with the metal elements, such as Ag, according to the composition of (high T sub c oxide)1-xAgx to metallize the grain boundaries in the samples, studying the effect of the electric conductivity of the grain boundaries on the critical current density; (3) adding SiO2, PbO2, and SnO2 into the high T sub c oxide to form impurity phases in the grain boundaries, trying to find out the effects of the impurity phases or metalloid grain boundaries on the critical current density of the high T sub c superconductors. The experimental results indicate that in the case of of the presence of the metalloid grain boundaries finning down grains fails to enhance the j sub c, but restrains it strongly, the granular high T sub c superconductors with the small size grains coupled weakly is always the low j sub c system.

Zhao, Y.↗

NASA NTRS1988

Grain boundary oxidation and low-cycle fatigue at elevated temperatures

Fatigue life consists of fatigue crack nucleation and propagation periods. In order to predict fatigue life accurately, a methodology for the quantitative assessment of these two fatigue damage processes had to be devised. Grain boundary oxidation penetrates faster than does oxidation within a grain. This faster oxidation penetration causes intergranular fatigue failures at elevated temperatures. Grain boundary oxidation accelerates both crack nucleation and propagation. Grain boundary oxidation kinetics and the statistical distribution of grain boundary oxide penetration depth were measured. Quantitative applications of the grain boundary oxidation kinetics to fatigue crack nucleation and propagation were analyzed. A method, based on the Weibull distribution, of extrapolating the laboratory oxidation data measured with small samples to large engineering structures is presented.

Liu, H. W.↗

DOE OSTI2025

Selective Isolation of Surface Grain Boundaries by Oxide Dielectrics Improves Cd(Se,Te) Device Performance

Cd(Se,Te) photovoltaics (PV) are the most widely deployed thin-film solar technology globally, yet continued efficiency improvements are stymied by challenges at the device hole contacts. The inclusion of solution-processed oxide layers such as AlGaO x in the contact stack has yielded improved device open-circuit voltages (V OC ) and fill factors (FF). However, contradictory mechanisms by which these layers improve the device properties have been proposed by the research community. We demonstrate in this work that an underappreciated property of such spin-coated layers is the preferential deposition at grain boundaries, a process that isolates the grain boundaries during contact metallization. The effects of grain-boundary isolation are probed by varying the coverage of solution-processed AlGaO x “barrier” layers on the Cd(Se,Te) surface, quantified by scanning Auger microscopy. Examining coverage-dependent V OC and FF, it was observed that isolating the grain boundaries during metallization is sufficient to prevent damage to the absorber that occurs in devices lacking a barrier layer, while additional coverage contributes to the increased series resistance. Such an effect is agnostic to the material used as a barrier layer, as long as the material does not itself damage the absorber. Spin-coated SiO x was used in place of AlGaO x for an equally beneficial effect. This grain-boundary isolation phenomenon is also observed during Mo deposition and in absorbers that have been contacted with a nitrogen-doped ZnTe layer. The mechanisms by which metallization may degrade the absorber are discussed, as are contact design strategies leveraging barrier layers, which may lead to improved device efficiencies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Experimental characterization and atomistic simulation of grain boundary segregation in Mg-Y alloys

As a rare earth solute element in Mg alloys, Y has the beneficial effects of increasing both the strength and the ductility as well as weakening the crystallographic texture. To achieve a more fundamental understanding on how Y addition affects the microstructural evolution and mechanical properties, the Y segregation behavior at grain boundaries was investigated in Mg-1wt.%Y and Mg-7wt.%Y alloys at different conditions. The segregation intensity and its dependence on the grain boundary misorientation angle were experimentally characterized and computationally predicted. Strong segregation at grain boundaries was observed in both low and high Y-containing alloys. Y segregation was found to remain in alloy Mg-7Y after high-temperature annealing heat treatment at 540 °C. No direct correlation between the Y segregation intensity and the grain boundary misorientation angle could be established based on either the experimental characterization or the atomistic simulation with a spectral model. We thus conclude that grain boundary segregation of Y is independent of grain boundary misorientation angle.

Grain boundary↗

DOE OSTI2025

Size-dependent attraction of Cu solutes to clusters formed at Ag grain boundaries

We report a size-dependent solute clustering mechanism at grain boundaries in a sputtered ultrafine-grained Ag-Cu alloy, where large Cu clusters form despite weak individual solute-solute interactions. X-ray diffraction confirms limited Cu solubility in the Ag matrix, while scanning transmission electron microscopy reveals Cu clustering at both ordinary GBs and GB junctions. Density functional theory calculations show that 12-atom Cu clusters are energetically preferred, while smaller three-atom clusters are significantly less stable. Additional calculations demonstrate a marked increase in solute-cluster attraction energy with cluster size. As a result, these findings point to a previously unrecognized pathway for grain-boundary solute clustering in immiscible systems, driven by collective solute-cluster interactions, with implications for segregation behavior and stability in nanocrystalline and ultrafine-grained alloys.

Alloys↗

DOE OSTI2026

Elucidating the impact of stress states on grain boundary passivation in Ni-5Cr using the Rhines pack method

The oxidation behavior of a Ni–5Cr (at.%) alloy was evaluated at 420 ° C using the Rhines pack method and simultaneous tensile and compressive stress states via a miniature four-point bending fixture. At this moderate temperature, grain boundaries dominate mass transport and the resulting oxidation response. Oxidation produced approximately 1μ⁢m-wide protective Cr 2 O 3 films capping some grain boundaries and penetrative, intergranular Cr-rich oxides at other grain boundaries. Externally applied tensile and compressive stress during oxidation increased the prevalence of Cr 2 O 3 cap formation compared to no applied stress, with tensile stress resulting in more Cr 2 O 3 caps than compressive stress. The observed oxide cap morphology was similar across all test conditions. Regions under compressive stress showed an order of magnitude greater Cr depletion depth along the grain boundary. Chromium nitrides (CrN), likely from N contamination of the Rhines pack cell, were observed both at the oxide–metal interface and intergranularly within the alloy. Collectively these results demonstrate that applied stress promotes localized protective oxide cap formation over grain boundaries, with compressive stress additionally promoting deeper Cr depletion. Furthermore the experimental approach helped separate out the effects of stress on local oxide formation and grain boundary passivation.

4 point bend↗

NASA NTRS1988

Grain boundary oxidation and an analysis of the effects of oxidation on fatigue crack nucleation life

The effects of preoxidation on subsequent fatigue life were studied. Surface oxidation and grain boundary oxidation of a nickel-base superalloy (TAZ-8A) were studied at 600 to 1000 C for 10 to 1000 hours in air. Surface oxides were identified and the kinetics of surface oxidation was discussed. Grain boundary oxide penetration and morphology were studied. Pancake type grain boundary oxide penetrates deeper and its size is larger, therefore, it is more detrimental to fatigue life than cone-type grain boundary oxide. Oxide penetration depth, a (sub m), is related to oxidation temperature, T, and exposure time, t, by an empirical relation of the Arrhenius type. Effects of T and t on statistical variation of a (sub m) were analyzed according to the Weibull distribution function. Once the oxide is cracked, it serves as a fatigue crack nucleus. Statistical variation of the remaining fatigue life, after the formation of an oxide crack of a critical length, is related directly to the statistical variation of grain boundary oxide penetration depth.

Oshida, Y.↗

NASA NTRS1980

Effects of grain boundaries in polycrystalline solar cells

In polycrystalline solar cells, the short-circuit current is reduced (compared to single-crystal cells) due to recombination of minority carriers at the grain boundaries. The magnitude of this reduction is calculated for the case of a monochromatic beam of light, assuming that both the light beam and the grain boundaries are perpendicular to a p-n junction. The photoresponse of the junction is calculated in terms of the absorption coefficient of the light, the minority-carrier diffusion length, the surface recombination velocity at the grain boundary and the distance of the light beam from the grain boundary. The analysis gives an expression for an effective grain boundary width which depends on wavelength. This width determines the reduction in short-circuit current of solar cells made from material with columnar-type grains.

Zook, J. D.↗